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Microinverters have been widely used in distributed photovoltaic (PV) systems in recent years due to their modularity and flexibility. However, the current development of microinverter topologies faces significant challenges, such as low voltage gain and limited reliability. To address these problems, this paper proposes an Enhanced Switched-Inductor quasi-Z-Source inverter (ESL-qZSI) based on Gallium Nitride High Electron Mobility Transistor (GaN HEMT). The proposed inverter introduces a novel topology that integrates an auxiliary boost unit with a switched-inductor quasi-Z-source network. This topology significantly enhances the voltage gain under low shoot-through duty ratios and reduces the voltage stress across the switching devices. Additionally, the use of GaN HEMT as power switching components increases the switching frequency from the conventional 10 kHz to 100 kHz, in which a specialized negative turn-off gate driver circuit is proposed to adapt the characteristics of the GaN HEMT and to ensure reliable switching operation. This increase in frequency reduces the size of passive components, such as inductors. Experimental results show that the proposed inverter achieves a boost factor of 5.75 at a shoot-through duty ratio of 0.2, which indicates a 15% improvement and a 91% improvement greater than the results of the conventional switched-inductor-capacitor quasi-Z-source inverter (SLC-qZSI) and the conventional switched-inductor Z-source inverter (SL-ZSI), respectively. These results confirm that the proposed inverter enhances the voltage gain of existing topologies. Besides, compared with SLC-qZSI, the proposed inverter could obtain a higher efficiency of 90.5%, which exhibites the advantage of efficiency. In conclusion, the proposed ESL-qZSI with GaN HEMT provides a promising solution for high-efficiency and compact microinverter systems in photovoltaic applications.
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[1] Hmad J, Houari A, Bouzid A E M, Saim A, Trabelsi H 2023Energies 16 5062
[2] Iweh C D, Gyamfi S, Tanyi E, Effah-Donyina E 2021Energies 14 5375
[3] Wang Q, Zhao B, Sun H D 2020IEEE 4th Conference on Energy Internet and Energy System Integration (EI2) Wuhan, China, 2020 p1407
[4] Priyadarshi N, Padmanaban S, Ionel D M, Mihet-Popa L, Azam F 2018Energies 11 2277
[5] Monjo L, Sainz L, Mesas J J, Pedra J 2021Energies 14 508
[6] Peng F Z 2003IEEE Trans. Ind. Appl. 39 504
[7] Yuan J, Yang Y H, Blaabjerg F 2020Energies 13 1390
[8] Samanbakhsh R, Koohi P, Ibanez F M, Martin F, Terzija V 2023Int. J. Electr. Power Energy Syst. 147 108819
[9] Li Y, Anderson J, Peng F Z, Liu D C 2009Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition Washington, DC, USA, 2009 p918
[10] Rajan V R, Premalatha L 2017Int. J. Power Electron. Drive Syst. 8 325
[11] Axelrod B, Berkovich Y, Ioinovici A 2008IEEE Trans. Circuits Syst. I Regul. Pap. 55 687
[12] Liu H C, Yang S, Wang G L, Li F 2013Acta Phys. Sin. 62 150505(in Chinese)[刘洪臣,杨爽,王国立,李飞2013 62 150505]
[13] Zhu M, Yu K, Luo F L 2010IEEE Trans. Power Electron. 25 2150
[14] Nguyen M K, Lim Y C, Cho G B 2011 IEEE Trans. Power Electron. 26 3183
[15] Zhu X Q, Zhang B, Qiu D Y 2018IET Power Electron. 11 1774
[16] Karbalaei A R, Mardaneh M 2021 IEEE Ind. Electron. Mag. 15 4
[17] Bolaghi J A, Taheri A, Babaei M H, Gholami M, Harajchi S 2023IETE J. Res. 70 4231
[18] Chaudhary O S, Denaï M, Refaat S S, Pissanidis G 2023 Energies 16 6689
[19] Zhang Y J, Li J G, Wang J H, Zheng T Q, Jia P Y 2022Energies 15 7791
[20] Cheng Z 2021Acta Phys. Sin. 70 236502(in Chinese)[程哲2021 70 236502]
[21] Wang S, Ge C, Xu Z Y, Cheng A Q, Chen D J 2024Acta Phys. Sin. 73 177101(in Chinese)[王帅,葛晨,徐祖银,成爱强,陈敦军2024 73 177101]
[22] Morita T, Tamura S, Anda Y, Ishida M, Uemoto Y, Ueda T, Tanaka T, Ueda D 201126th Annual IEEE Applied Power Electronics Conference and Exposition (APEC) Fort Worth, TX, USA, 2011 p481
[23] Zhao C W, Trento B, Jiang L, Jones E A, Liu B, Zhang Z Y, Costinett D, Wang F, Tolbert L M, Jansen J F, Kress R, Langley R 2016IEEE J. Emerging Sel. Top. Power Electron. 4 824
[24] Jagan V, Ullemgondla G, Thati D, Salveru B, Ongole D, Banoth S 20243rd International Conference on Power Electronics and IoT Applications in Renewable Energy and its Control (PARC) Mathura, India, 2024 p475
[25] Xie R L, Hao X, Wang Y, Yang X, Huang L, Wang C, Yang Y H 2014Acta Phys. Sin. 63 120510(in Chinese)[谢瑞良,郝翔,王跃,杨旭,黄浪,王超,杨月红2014 63 120510]
[26] Liao Z X, Luo X S, Huang G X 2015Acta Phys. Sin. 64 130503(in Chinese)[廖志贤,罗晓曙,黄国现2015 64 130503]
[27] Yi L Q, Gao K C 2008Power Electronics 42 50(in Chinese)[易龙强,郜克存2008电力电子技术42 50]
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