Search

x
中国物理学会期刊
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulseJ. Acta Physica Sinica, 2016, 65(3): 038402. DOI: 10.7498/aps.65.038402
Citation: Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulseJ. Acta Physica Sinica, 2016, 65(3): 038402. DOI: 10.7498/aps.65.038402

Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse

CSTR: 32037.14.aps.65.038402
PDF
Get Citation
Turn off MathJax
Article Contents

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return
    Baidu
    map