Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulseJ. Acta Physica Sinica, 2016, 65(3): 038402. DOI: 10.7498/aps.65.038402
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Citation:
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulseJ. Acta Physica Sinica, 2016, 65(3): 038402. DOI: 10.7498/aps.65.038402
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulseJ. Acta Physica Sinica, 2016, 65(3): 038402. DOI: 10.7498/aps.65.038402
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Citation:
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulseJ. Acta Physica Sinica, 2016, 65(3): 038402. DOI: 10.7498/aps.65.038402
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