-
The physical mechanisms underlying current collapse effects in the passivated GaN high-electron mobility transistors(HEMTs), the gate field-plated GaN HEMTs and the gate-source field-plated GaN HEMTs are investigated in experiments and numerical device simulations. And the intrinsic relationships of the current collapse with the carrier concentration, the probability of traps ionization, and the electric field within the cap layer are established. Results show that the direction of the longitudinal electric field, as well as the intensity distribution of both the transverse and longitudinal electric fields within the cap layer, can be modulated effectively by the field-plates. The electric field intensity near the gate is reduced and that beneath the field-plates increased. Due to the effects of the field-plates on electric field, the transverse movement of electrons near the gate is reduced, and the longitudinal electron movement beneath the field-plates is increased. These affects the electron concentration distribution and the ionization probability of the traps in the cap layer, which makes field-plates effective for the reduction in the current collapse.
-
Keywords:
- current collapse /
- passivated devices /
- field-plated devices /
- probability of traps ionization
[1] Kumar V, Chen G, Guo S P, Adesida I 2006 IEEE Transactions on Electron Devices 53 1477
[2] Wu Y F, Moore M, Wisleder T, Saxler A, Parikh P 2006 IEEE 64th Device Research Conference PA, USA, June, 2006 p151
[3] Wei W, Hao Y, Feng Q, Zhang J C, Zhang J F 2008 Acta Phys. Sin. 57 2456(in Chinese)[魏 巍、郝 跃、冯 倩、张进城、张金凤 2008 57 2456]
[4] Lee J W, Kuliev A S, Adesida I 2008 Japanese Journal of Applied Physics 47 1479
[5] Koudymov A, Adivarahan V, Yang J, Simin G, Khan A A 2005 IEEE Electron Device Letters 26 704
[6] Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 467(in Chinese)[魏 巍、林若兵、冯 倩、郝 跃 2008 57 467]
[7] Nakajima A, Itagaki K, Horio K 2009 Phys. Status Solidi 6 2840
[8] Brannick A, Zakhleniuk N A, Ridley B K, Shealy J R, Schaff W J, Eastman L F 2009 IEEE Electron Device Letters 30 436
[9] Daumiller I, Theron D, Gaquiere C, Vescan A, Dietrich R, Wieszt A, Leier H, Vetury R, Mishra U K, Smorchkova I P, Nguyen N X, Kohn E 2001 IEEE Electron Device Letters 22 62
[10] Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta Phys. Sin. 57 7238(in Chinese)[席光义、任 凡、郝智彪、汪 莱、李洪涛、江 洋、赵 维、韩彦军、罗 毅 2008 57 7238]
[11] Tirado J M, Sanchez-Rojas J L, Izpura J I 2007 IEEE Transactions on Electron Devices 54 410
[12] Meneghesso G, Rampazzo F, Kordos P, Verzellesi G, Zanoni E 2006 IEEE Transactions on Electron Devices 53 2932
[13] Romero M F, Jimenez A, Sanchez J M, Brana A F, Gonzalez-Posada F, Cuerdo R, Calle F, Munoz E 2008 IEEE Electron Device Letters 29 209
[14] Yang L, Hao Y, Ma X H, Quan S, Hu G Z, Jiang S G, Yang L Y 2009 Chin. Phys. Lett. 26 117104
[15] Hu G Z, Yang L, Yang L Y, Quan S, Jiang S G, Ma J G, Ma X H, Hao Y 2010 Chin. Phys. Lett. 27 087302
[16] Shen L, Palacios T, Coblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars S P, Speck J S, Mishra U K 2006 IEEE Electron Device Letters 27 214
[17] Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lu L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013(in Chinese)[周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕 力、刘 建、刘新宇、贾海强、陈 弘、周均铭 2007 56 6013]
[18] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F 1999 Journal of Applied Physics 85 3222
[19] Piprek J 2007 Nitride Semiconductor Devices-Principles and Simulation (New York: Wiley-VCH) p24—53
[20] Faqir M, Verzellesi G, Chini A, Fantini F, Danesin F, Meneghesso G, Zanoni E, Dua C 2008 IEEE Transactions on Device and Materials Reliability 8 240
[21] Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE Transactions on Electron Devices 48 560
[22] Simmons J G, Taylor G W 1971 Phys. Rev. B 4 502
-
[1] Kumar V, Chen G, Guo S P, Adesida I 2006 IEEE Transactions on Electron Devices 53 1477
[2] Wu Y F, Moore M, Wisleder T, Saxler A, Parikh P 2006 IEEE 64th Device Research Conference PA, USA, June, 2006 p151
[3] Wei W, Hao Y, Feng Q, Zhang J C, Zhang J F 2008 Acta Phys. Sin. 57 2456(in Chinese)[魏 巍、郝 跃、冯 倩、张进城、张金凤 2008 57 2456]
[4] Lee J W, Kuliev A S, Adesida I 2008 Japanese Journal of Applied Physics 47 1479
[5] Koudymov A, Adivarahan V, Yang J, Simin G, Khan A A 2005 IEEE Electron Device Letters 26 704
[6] Wei W, Lin R B, Feng Q, Hao Y 2008 Acta Phys. Sin. 57 467(in Chinese)[魏 巍、林若兵、冯 倩、郝 跃 2008 57 467]
[7] Nakajima A, Itagaki K, Horio K 2009 Phys. Status Solidi 6 2840
[8] Brannick A, Zakhleniuk N A, Ridley B K, Shealy J R, Schaff W J, Eastman L F 2009 IEEE Electron Device Letters 30 436
[9] Daumiller I, Theron D, Gaquiere C, Vescan A, Dietrich R, Wieszt A, Leier H, Vetury R, Mishra U K, Smorchkova I P, Nguyen N X, Kohn E 2001 IEEE Electron Device Letters 22 62
[10] Xi G Y, Ren F, Hao Z B, Wang L, Li H T, Jiang Y, Zhao W, Han Y J, Luo Y 2008 Acta Phys. Sin. 57 7238(in Chinese)[席光义、任 凡、郝智彪、汪 莱、李洪涛、江 洋、赵 维、韩彦军、罗 毅 2008 57 7238]
[11] Tirado J M, Sanchez-Rojas J L, Izpura J I 2007 IEEE Transactions on Electron Devices 54 410
[12] Meneghesso G, Rampazzo F, Kordos P, Verzellesi G, Zanoni E 2006 IEEE Transactions on Electron Devices 53 2932
[13] Romero M F, Jimenez A, Sanchez J M, Brana A F, Gonzalez-Posada F, Cuerdo R, Calle F, Munoz E 2008 IEEE Electron Device Letters 29 209
[14] Yang L, Hao Y, Ma X H, Quan S, Hu G Z, Jiang S G, Yang L Y 2009 Chin. Phys. Lett. 26 117104
[15] Hu G Z, Yang L, Yang L Y, Quan S, Jiang S G, Ma J G, Ma X H, Hao Y 2010 Chin. Phys. Lett. 27 087302
[16] Shen L, Palacios T, Coblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars S P, Speck J S, Mishra U K 2006 IEEE Electron Device Letters 27 214
[17] Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, Lu L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013(in Chinese)[周忠堂、郭丽伟、邢志刚、丁国建、谭长林、吕 力、刘 建、刘新宇、贾海强、陈 弘、周均铭 2007 56 6013]
[18] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J, Eastman L F 1999 Journal of Applied Physics 85 3222
[19] Piprek J 2007 Nitride Semiconductor Devices-Principles and Simulation (New York: Wiley-VCH) p24—53
[20] Faqir M, Verzellesi G, Chini A, Fantini F, Danesin F, Meneghesso G, Zanoni E, Dua C 2008 IEEE Transactions on Device and Materials Reliability 8 240
[21] Vetury R, Zhang N Q, Keller S, Mishra U K 2001 IEEE Transactions on Electron Devices 48 560
[22] Simmons J G, Taylor G W 1971 Phys. Rev. B 4 502
Catalog
Metrics
- Abstract views: 9059
- PDF Downloads: 969
- Cited By: 0
下载:
