Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors

Zhang Jin-Cheng; Mao Wei; Liu Hong-Xia; Wang Chong; Zhang Jin-Feng; Hao Yue; Yang Lin-An; Xu Sheng-Rui; Bi Zhi-Wei; Zhou Zhou; Yang Ling; Wang Hao; Yang Cui; Ma Xiao-Hua

doi:10.7498/aps.60.017205

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Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistorsJ. Acta Physica Sinica, 2011, 60(1): 017205. DOI: 10.7498/aps.60.017205

Citation:

Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistorsJ. Acta Physica Sinica, 2011, 60(1): 017205. DOI: 10.7498/aps.60.017205

Citation:

Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua. Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistorsJ. Acta Physica Sinica, 2011, 60(1): 017205. DOI: 10.7498/aps.60.017205