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AlGaN/GaN high electron mobility transistors (HEMT) are exposed to 3 MeV protons irradiation. The drain saturation current decreases 20% and the maximum transconductance decreases 5% at a fluence of 1× 1015 protons/cm2. As fluence increases, the thread voltage is shifted toward more positive values. After proton irradiation, the gate leakage current increases. The degradation caused by 1.8 MeV proton is significantly higher than by 3 MeV proton irradiation at the same fluence. The radiation damage area and the density of vacancies at a given depth are obtained from software SRIM. As the energy of the incident proton increases, the non-ionizing energy transferred to the crystal lattice decreases. It is concluded that vacancies introduced by proton irradiation may be the primary reason for the degradations of electrical characteristics of AlGaN/GaN HEMT.
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Keywords:
- proton irradiation /
- AlGaN/GaN HEMT /
- SRIM /
- vacancies density
[1] Claeys C, Simoen E (Translated by Liu Z L) 2008 Radiation Effectsin Advanced Semiconductor Materials and Devices (Beijing:National Defence Industry Press) p20 (in Chinese) [Claeys C, SimoenE著,刘忠立译 2008 先进半导体材料及器件的辐射效应 (北京:国防工业出版社) 第20页]
[2] Nedelcescu A L, Carlone C, Houdayer A, Bardeleben H J, CantinJ L, Raymond S 2002 IEEE Trans. Nucl. Sci. 49 2733
[3] Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D,Stubbins J, Adesida I 2004 Solid-State Electron. 48 471
[4] Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 ActaPhys. Sin. 58 1161 (in Chinese) [谷文萍, 张进城, 王冲,冯倩, 马晓华, 郝跃 2009 58 1161
[5] Hu X W, Karmarkar A P, Jun B, Fleetwood D M, Schrimpf R D,Geil R D,Weller R A,White B D, Bataiev M, Brillson L J,MishraU K 2003 IEEE Trans. Nucl. Sci. 50 1791
[6] Kim H Y, Kim J, Yun S P, Kim K R, Anderson T J, Ren F, PeartonS J 2008 J. Electrochem. Soc. 155 H513
[7] Zieglar J F, Ziegler M D, Biersack J P 2010 Nucl. Instrum. MethodsPhys. Res. B 268 1818
[8] White B D, Bataiev M, Goss S H, Hu X, Karmarkar A, FleetwoodD M, Schrimpf R D, Schaff W J, Brillson L J 2003 IEEE Trans.Nucl. Sci. 50 1934
[9] Kalavagunta A, Touboul A, Shen L, Schrimpf R D, Reed R A,Fleetwood D M, Jain R K, Mishra U K 2008 IEEE Trans. Nucl.Sci. 55 2106
[10] Petrosky J C, McClory J W, Gray T E, Uhlman T A 2009 IEEETrans. Nucl. Sci. 56 2905
[11] Xie S Y, Yin J Y, Zhang S, Liu B, Zhou W, Feng Z H 2009 Solid-State Electron. 53 1183
[12] Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T 2000 J.Appl. Phys. 87 8070
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[1] Claeys C, Simoen E (Translated by Liu Z L) 2008 Radiation Effectsin Advanced Semiconductor Materials and Devices (Beijing:National Defence Industry Press) p20 (in Chinese) [Claeys C, SimoenE著,刘忠立译 2008 先进半导体材料及器件的辐射效应 (北京:国防工业出版社) 第20页]
[2] Nedelcescu A L, Carlone C, Houdayer A, Bardeleben H J, CantinJ L, Raymond S 2002 IEEE Trans. Nucl. Sci. 49 2733
[3] Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D,Stubbins J, Adesida I 2004 Solid-State Electron. 48 471
[4] Gu W P, Zhang J C, Wang C, Feng Q, Ma X H, Hao Y 2009 ActaPhys. Sin. 58 1161 (in Chinese) [谷文萍, 张进城, 王冲,冯倩, 马晓华, 郝跃 2009 58 1161
[5] Hu X W, Karmarkar A P, Jun B, Fleetwood D M, Schrimpf R D,Geil R D,Weller R A,White B D, Bataiev M, Brillson L J,MishraU K 2003 IEEE Trans. Nucl. Sci. 50 1791
[6] Kim H Y, Kim J, Yun S P, Kim K R, Anderson T J, Ren F, PeartonS J 2008 J. Electrochem. Soc. 155 H513
[7] Zieglar J F, Ziegler M D, Biersack J P 2010 Nucl. Instrum. MethodsPhys. Res. B 268 1818
[8] White B D, Bataiev M, Goss S H, Hu X, Karmarkar A, FleetwoodD M, Schrimpf R D, Schaff W J, Brillson L J 2003 IEEE Trans.Nucl. Sci. 50 1934
[9] Kalavagunta A, Touboul A, Shen L, Schrimpf R D, Reed R A,Fleetwood D M, Jain R K, Mishra U K 2008 IEEE Trans. Nucl.Sci. 55 2106
[10] Petrosky J C, McClory J W, Gray T E, Uhlman T A 2009 IEEETrans. Nucl. Sci. 56 2905
[11] Xie S Y, Yin J Y, Zhang S, Liu B, Zhou W, Feng Z H 2009 Solid-State Electron. 53 1183
[12] Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T 2000 J.Appl. Phys. 87 8070
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