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2023, 72(14): 147302.
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2009, 58(1): 494-497.
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2008, 57(3): 1872-1877.
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2006, 55(2): 820-824.
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Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2003, 52(10): 2553-2557.
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