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Perovskite solar cells (PSCs) with inverted structures have gained significant attentions in the field of photovoltaics. NiO is one of the commonly explored hole transport materials (HTMs) due to its excellent chemical stability compared to organic materials. Pure NiO is an insulator, but the presence of nickel vacancies introduces the formation of Ni3+ ions that give rise to p-type semiconductor properties. However, the low conductivity and poor interfacial contact between NiO and perovskite thin films still pose challenges in achieving high-performance inverted PSCs. To overcome these issues, this study used potassium acetate as a potassium source into nickel precursor and doped potassium ions (K+) into NiO nanocrystals. The introduction of K+ in NiO induces the formation of Ni3+ ions, thereby increasing the conductivity and hole mobility of NiO. Furthermore, K+-doped NiO demonstrated better interface contact with the perovskite film, facilitating the efficient separation of photo-generated charges with a strong photoluminescence quenching effect. Experimental results demonstrated that the optimal concentration of K+ doping is 3 mol%, and the PSCs prepared with K+-doped NiO exhibited a significant increase in efficiency, from 15.15% to 16.75%, primarily attributed to improvements in the short-circuit current density and fill factor. These improvements highlight the importance of enhanced conductivity and better interfacial contact achieved through K+ doping for charge carrier collection, effectively addressing the limitations of NiO in inverted PSCs.
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