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Single-event-transient response of 22-nm technology ultra-thin-body fully-depleted silicon-on-insulator transistor is examined by technology computer-aided design numerical simulation. The influences of ground plane doping, heavy ion injection location, gate work function and substrate bias on single-event-transient characteristic are systematically studied and analyzed. Simulation results show that the influences of ground plane doping and quantum effects on single-event-transient (SET) are relatively small. The SET characteristics and collected charge are strike-location sensitive. The most SET-sensitive region in ultra-thin-body fully-depleted silicon-on-insulator transistor is located near the drain region. When gate work function varies from 4.3 eV to 4.65 eV, the transient current peak is reduced from 564 μA to 509 μA and the collected charge decreases from 4.57 fC to 3.97 fC. The transient current peak is strongly affected by substrate bias. In contrast, the total collected charge depends only weakly on substrate bias.
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Keywords:
- ultra-thin-body fully-depleted silicon-on-insulator /
- single-event-transient /
- charge collection /
- numerical simulation
[1] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 60 018501]
[2] Zhuo Q Q, Liu H X, Yang Z N, Cai H M, Hao Y 2012 Acta Phys. Sin. 61 220702 (in Chinese) [卓青青, 刘红侠, 杨兆年, 蔡惠民, 郝跃 2012 61 220702]
[3] Tsuchiya T, Sato Y, Tomizawa M 1998 IEEE Trans. Electr. Dev. 45 5
[4] Choi Y K, Asano K, Lindert N, Subramanium V, King T J, Bokor J, Hu C 2000 IEEE Electr. Dev. Lett. 21 5
[5] Vandooren A, Jovanovic D, Egley S, Sadd M, Nguyen B Y, White B, Orlowski M, Mogab J 2002 Proccedings of IEEE SOI Conference Virginia, USA, October 7-10, 2002 p205
[6] Li X J, Liu C M, Sun Z L, Lan M J, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 058502 (in Chinese) [李兴冀, 刘超铭, 孙中亮, 兰慕杰, 肖立伊, 何世禹 2012 62 058502]
[7] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[8] Massengill L W, Bhuva B L, Holman W T, Alles M L, Loveless T D 2012 Proccedings of IEEE International Reliability Physics Symposium California, USA, April 15-19, 2012 p3C1. 1
[9] Alles M L, Schrimpf R D, Reed R A, Massengill L W, Weller R A, Mendenhall M H 2011 Proccedings of IEEE SOI Conference Arizona, USA, October 3-6, 2011 p223
[10] Ferlet-Cavrois V, Paillet P, McMorrow D, Melinger J S, Campbell A B, Gaillardin M, Faynot O, Thomas O 2005 Proccedings of Radiation Effects on Components and Systems Cap D’Agde, France, September 19-23, 2005 pC22-1
[11] Musseau O, Ferlet-Cavrois V, Pelloie J L, Buchner S, McMorrow D, Campbell A B 2000 IEEE Trans. Nucl. Sci. 47 6
[12] Castellani-Coulié K, Munteanu D, Autran J L, Ferlet-Cavrois V, Paillet P, Baggio J 2005 IEEE Trans. Nucl. Sci. 52 5
[13] Munteanu D, Autran J L 2009 IEEE Trans. Nucl. Sci. 56 4
[14] El-Mamouni F, Zhang E X, Ball D R, Sierawski B, King M P, Schrimpf R D, Reed R A, Alles M L, Fleetwood D M, Linten D M, Simoen E, Vizkelethy G 2012 IEEE Trans. Nucl. Sci. 59 6
[15] Qin J R, Chen S M, Li D W, Liang B, Liu B W 2012 Chin. Phys. B 21 089401
[16] Kim S S, Choe T H, Rhee H S, Bae G J, Lee K W, Lee N I, Fujihara K, Kang K K, Moon J Y 2000 Proceedings of IEEE SOI Conference Massachusetts, USA, October 2-5, 2011 p74
[17] Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, Buttet C, Abbate F, Bourdelle K K, Nguyen B Y, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F 2011 Proceedings of Solid-State Device Research Conference Helsinki, Finland, September 12-16, 2011 p111
[18] Fan Z H, Bi J S, Luo J J, Han Z S 2010 Proceedings 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Shanghai, China November 1-4, 2010 p1847
[19] Hirose K, Saito H, Kuroda Y, Ishii S, Fukuoka Y, Takahashi D 2002 IEEE Trans. Nucl. Sci. 49 6
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[1] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 60 018501]
[2] Zhuo Q Q, Liu H X, Yang Z N, Cai H M, Hao Y 2012 Acta Phys. Sin. 61 220702 (in Chinese) [卓青青, 刘红侠, 杨兆年, 蔡惠民, 郝跃 2012 61 220702]
[3] Tsuchiya T, Sato Y, Tomizawa M 1998 IEEE Trans. Electr. Dev. 45 5
[4] Choi Y K, Asano K, Lindert N, Subramanium V, King T J, Bokor J, Hu C 2000 IEEE Electr. Dev. Lett. 21 5
[5] Vandooren A, Jovanovic D, Egley S, Sadd M, Nguyen B Y, White B, Orlowski M, Mogab J 2002 Proccedings of IEEE SOI Conference Virginia, USA, October 7-10, 2002 p205
[6] Li X J, Liu C M, Sun Z L, Lan M J, Xiao L Y, He S Y 2013 Acta Phys. Sin. 62 058502 (in Chinese) [李兴冀, 刘超铭, 孙中亮, 兰慕杰, 肖立伊, 何世禹 2012 62 058502]
[7] Zhang J X, Guo H X, Guo Q, Wen L, Cui J W, Xi S B, Wang X, Deng W 2013 Acta Phys. Sin. 62 048501 (in Chinese) [张晋新, 郭红霞, 郭旗, 文林, 崔江维, 席善斌, 王信, 邓伟 2013 62 048501]
[8] Massengill L W, Bhuva B L, Holman W T, Alles M L, Loveless T D 2012 Proccedings of IEEE International Reliability Physics Symposium California, USA, April 15-19, 2012 p3C1. 1
[9] Alles M L, Schrimpf R D, Reed R A, Massengill L W, Weller R A, Mendenhall M H 2011 Proccedings of IEEE SOI Conference Arizona, USA, October 3-6, 2011 p223
[10] Ferlet-Cavrois V, Paillet P, McMorrow D, Melinger J S, Campbell A B, Gaillardin M, Faynot O, Thomas O 2005 Proccedings of Radiation Effects on Components and Systems Cap D’Agde, France, September 19-23, 2005 pC22-1
[11] Musseau O, Ferlet-Cavrois V, Pelloie J L, Buchner S, McMorrow D, Campbell A B 2000 IEEE Trans. Nucl. Sci. 47 6
[12] Castellani-Coulié K, Munteanu D, Autran J L, Ferlet-Cavrois V, Paillet P, Baggio J 2005 IEEE Trans. Nucl. Sci. 52 5
[13] Munteanu D, Autran J L 2009 IEEE Trans. Nucl. Sci. 56 4
[14] El-Mamouni F, Zhang E X, Ball D R, Sierawski B, King M P, Schrimpf R D, Reed R A, Alles M L, Fleetwood D M, Linten D M, Simoen E, Vizkelethy G 2012 IEEE Trans. Nucl. Sci. 59 6
[15] Qin J R, Chen S M, Li D W, Liang B, Liu B W 2012 Chin. Phys. B 21 089401
[16] Kim S S, Choe T H, Rhee H S, Bae G J, Lee K W, Lee N I, Fujihara K, Kang K K, Moon J Y 2000 Proceedings of IEEE SOI Conference Massachusetts, USA, October 2-5, 2011 p74
[17] Fenouillet-Beranger C, Perreau P, Boulenc P, Tosti L, Barnola S, Andrieu F, Weber O, Beneyton R, Perrot C, Buttet C, Abbate F, Bourdelle K K, Nguyen B Y, Boedt F, Poiroux T, Faynot O, Skotnicki T, Boeuf F 2011 Proceedings of Solid-State Device Research Conference Helsinki, Finland, September 12-16, 2011 p111
[18] Fan Z H, Bi J S, Luo J J, Han Z S 2010 Proceedings 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Shanghai, China November 1-4, 2010 p1847
[19] Hirose K, Saito H, Kuroda Y, Ishii S, Fukuoka Y, Takahashi D 2002 IEEE Trans. Nucl. Sci. 49 6
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