全三维电离粒子有源像素探测器优化仿真

胡海帆; 王颖; 陈杰; 赵士斌

doi:10.7498/aps.63.100702

摘要

提出了一种双外延高能离子注入的单片集成有源像素探测器的传感器结构，以提升传感器对电荷的收集性能和辐射加固，并进行了三维工艺模拟和物理级器件仿真计算. 研究结果表明，所提出的传感器结构改善了内部电场和电势的分布，且目标电极的电荷收集效率提高70%，电荷收集时间减少64%. 此外，当等效中子辐射流通量在1012–1015 cm-2范围内时，所提出的传感器结构比标准传感器结构有更高的电荷收集能力.

关键词:

In this paper, a double epitaxial and high energy implant (DEI) is proposed to improve the performance of charge collection and radiation hardness. Three-dimensional process procedure and physical level simulation are presented. The results show that the internal distributions of electric potential and electric field are improved; the seed point pixel collected charge increases about 70% and reduces the collected time to 64%. In addition, the DEI structure increases the collecting efficiency in a radiation range from 1012 to 1015 cm-2as compared with the standard monolithic active pixel sensors.

Keywords:

作者及机构信息

1.
哈尔滨工程大学信息与通信工程学院, 哈尔滨 150001;

2.
中国科学院微电子研究所, 北京 100029

基金项目: 教育部科学技术研究重大项目（批准号：313017）、高等学校博士学科点专项科研基金（批准号：20122304110016）和中央高等学校基本科研业务费（批准号：HEUCF130818，HEUCF140814）资助的课题.

Authors and contacts

1.
College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001, China;

2.
Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

Funds: Project supported by the Foundation for Key Program of the Ministry of Education, China (Grant No. 313017), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20122304110016), and the Fundamental Research Funds for the Central Universities of China (Grant Nos. HEUCF130818, HEUCF140814).

参考文献

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[15]	Parkera S I, Kenneya C J, Segalb J 1997 Nucl. Instrum. Meth. A 395 328
[16]	Piemonte C, Boscardin M, Dalla Betta G F, Ronchin S, Zorzi N 2005 Nucl. Instrum. Meth. A 541 441
[17]	Silvaco International 2012 Atlas3D User's Manual-Device Simulation Software
[18]	Silvaco International 2012 Victory Process Cell User's Manual-Device Simulation Software
[19]	Silvaco International 2012 Tonyplot3D User's Manual-Device Simulation Software
[20]	Silvaco International 2012 Maskviews User's Manual-Device Simulation Software
[21]	Claus G, Colledani C, Dulinski W, Husson D, Turchetta R, Riester J L, Deptuch G, Orazi G, Winter M 2001 Nucl. Instrum. Meth. A 465 120
[22]	Deptuch G 2005 Nucl. Instrum. Meth. A 543 537
[23]	Sadrozinski H F W, Betancourt C, Heffern R, Henderson I, Pixley J, Polyakov A, Wilder M, Boscardin M, Piemonte C, Pozza A, Zorzi N, Dalla Betta G F, Resta G, Bruzzi M, Macchiolo A, Borrello L, Messineo A, Creanza D, Manna N 2007 Nucl. Instrum. Meth. A 579 769
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[25]	Zheng Z S, Liu Z L, Yu F, Li N 2012 Chin. Phys. B 21 116104

施引文献

[1]	E R Fossum 1997 IEEE Trans. Electron. Dev. 44 1689
[2]	E R Fossum 1993 Proc. SPIE 1900 2
[3]	Wang B, Li Y D, Guo Q, Liu C J, Wen L, Ma L Y, Sun J, Wang H J, Cong Z C, Ma W Y 2014 Acta Phys. Sin. 63 056102 (in Chinese)[汪波, 李豫东, 郭旗, 刘昌举, 文林, 玛丽娅, 孙静, 王海娇, 丛忠超, 马武英 2014 63 056102]
[4]	Turchetta R, Berst J D, Casadei B, Claus G, Colledani C, Dulinski W, Hu Y, Husson D, Le Normand J P, Riester J L, Deptuch G, Goerlach U, Higueret S, Winter M 2001 Nucl. Instrum. Meth. A 458 677
[5]	Ma X Y, Guo Y M, Rao C H, Wei K, Tian Y, Rao X J 2012 Acta Phys. Sin. 61 242902 (in Chinese)[马晓燠, 郭友明, 饶长辉, 魏凯, 田雨, 饶学军 2012 61 242902]
[6]	Ma X Y, Mu J, Rao C H 2012 Acta Phys. Sin. 61 072903 (in Chinese)[马晓燠, 郭友明, 饶长辉 2012 61 072903]
[7]	Claus G, Colledani C, Deptuch G, Dulinski W, Gornushkin Y, Hu Y, Husson D, Orazi G, Turchetta R, Riester J L, Winter M 2001 Nucl. Instrum. Meth. A 473 83
[8]	Noschis E, Eremin V, Ruggiero G 2007 Nucl. Instrum. Meth. A 574 420
[9]	Dulinski W, Berst J D, Besson A, Claus G, Colledani C, Deptuch G, Deveaux M, Gay A, Grandjean D, Gornushkin Y, Himmi A, Hu C, Riester J L, Valin I, Winter M 2004 IEEE Trans. Nucl. Sci. 51 1613
[10]	Deptuch G, Winter M, Dulinski W, Husson D, Turchetta R, Riester J L 2001 Nucl. Instrum. Meth. A 465 92
[11]	Moses W W, Derenzo S E, Melcher C L, Manente R A 1995 IEEE Trans. Nucl. Sci. 42 1085
[12]	Niraula M, Yasuda K, Agata Y, Nakamura A, Aoki T, Hatanaka Y 2003 IEEE Nucl. Sci. Symp. Conf. Rec. 5 3320
[13]	Dorokhov A, Bertolone G, Baudot J, Brogna A S, Colledani C, Claus G, De Masi R, Deveaux M, Dozière G, Dulinski W, Fontaine J C, Goffe M, Himmi A, Hu-Guo Ch, Jaaskelainen K, Koziel M, Morel F, Santos C, Specht M, Valin I, Voutsinas G, Wagner F M, Winter M 2010 Nucl. Instrum. Meth. A 624 432
[14]	Fu M, Tang Z 2011 Nucl. Instrum. Meth. A 646 153
[15]	Parkera S I, Kenneya C J, Segalb J 1997 Nucl. Instrum. Meth. A 395 328
[16]	Piemonte C, Boscardin M, Dalla Betta G F, Ronchin S, Zorzi N 2005 Nucl. Instrum. Meth. A 541 441
[17]	Silvaco International 2012 Atlas3D User's Manual-Device Simulation Software
[18]	Silvaco International 2012 Victory Process Cell User's Manual-Device Simulation Software
[19]	Silvaco International 2012 Tonyplot3D User's Manual-Device Simulation Software
[20]	Silvaco International 2012 Maskviews User's Manual-Device Simulation Software
[21]	Claus G, Colledani C, Dulinski W, Husson D, Turchetta R, Riester J L, Deptuch G, Orazi G, Winter M 2001 Nucl. Instrum. Meth. A 465 120
[22]	Deptuch G 2005 Nucl. Instrum. Meth. A 543 537
[23]	Sadrozinski H F W, Betancourt C, Heffern R, Henderson I, Pixley J, Polyakov A, Wilder M, Boscardin M, Piemonte C, Pozza A, Zorzi N, Dalla Betta G F, Resta G, Bruzzi M, Macchiolo A, Borrello L, Messineo A, Creanza D, Manna N 2007 Nucl. Instrum. Meth. A 579 769
[24]	Gao B, Yu X F, Ren D Y, Li Y D, Cui J W, Li M S, Li M, Wang Y Y 2011 Acta Phys. Sin. 60 036106 (in Chinese) [高博, 余学峰, 任迪远, 李豫东, 崔江维, 李茂顺, 李明, 王义元 2011 60 036106]
[25]	Zheng Z S, Liu Z L, Yu F, Li N 2012 Chin. Phys. B 21 116104

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