Electronic properties of two-dimensional Janus atomic crystal

Wang Pan; Zong Yi-Xin; Wen Hong-Yu; Xia Jian-Bai; Wei Zhong-Ming

doi:10.7498/aps.70.20201406

Abstract

Since the advent of graphene, two-dimensional materials with various novel properties have received more and more attention in the fields of optoelectronic devices, spintronics and valley electronic devices. Among them, the excellent properties that appear in graphene with various molecular groups for asymmetric functionalization have led to the research of other Janus two-dimensional materials with asymmetric surface characteristics. As an important derivative of two-dimensional materials, Janus two-dimensional materials (especially Janus transition metal chalcogenides) have become a research hotspot in recent years. Both experiment and theory have confirmed that this kind of material has mirror asymmetry and novel characteristics, such as strong Rashba effect and out-of-plane piezoelectric polarization, and thus showing a great prospect for its applications in sensors, actuators, and other electromechanical devices. In this review we introduce the recent research progress of emerging Janus two-dimensional materials (including Janus graphene, various Janus two-dimensional materials and Janus two-dimensional van der Waals heterojunction), and summarize the unique electronic properties and potential applications of Janus two-dimensional materials. Finally, we draw some conclusions and depict a prospect of further exploration of Janus two-dimensional materials.

Keywords:

Authors and contacts

1.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Wei Zhong-Ming, zmwei@semi.ac.cn

Funds: Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200501) and the National Natural Science Foundation of China (Grant No. 11904360)

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Cited By

图 1 (a)椅形、船形、锯齿形和扶手椅形等氢/氟化石墨烯的四种不同结构, 不同的颜色(阴影)表示石墨烯平面上方和下方的吸附物(H或F)^[90]; (b) HFC-1和HFC-2的俯视图和侧视图^[95]; (c)结构优化的石墨烯衍生物HFC-1和HFC-2的电子能带结构和相应的态密度^[95]; (d)对于C₂HF和C₄HF的每种构型, 沿石墨烯片的x方向(定义在顶部插图中)施加单轴应变ε₁₁会引起垂直于平面的极化变化^[99]

Figure 1. (a) Four different configurations of hydrogen/fluorine-graphene: Chair, boat, zigzag, and armchair configurations, the different colors (shades) represent adsorbates (H or F) above and below the graphene plane^[90]; (b) top and side views of HFC-1 and HFC-2; (c) electronic band structure and corresponding density of states of the optimized structures of graphene derivatives HFC-1 and HFC-2^[95]; (d) applying uniaxial strain ε₁₁ along the x-direction (defined in top inset) of the graphene sheet induces a change in polarization normal to the plane for each configuration for C₂HF and C₄HF^[99].

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图 2 (a)优化后的WSSe单层结构和垂直于WSSe单层方向的平均静电势, 插图是差分电荷密度, 其中红色和蓝色分别表示电子的积累和耗尽^[110]; (b)通过HSE和SOC方法给出Janus MXY单层的能带结构^[111]; (c)当单轴应变ε₁在–0.5%—0.5%之间时, MoSTe单层的面内和面外压电极化的线性变化, 给出e₁₁和e₃₁值(单位:10^–10C/m)^[74]

Figure 2. (a) Optimized structure of the WSSe monolayer, and the average electronic potential energy in the vertical direction of the WSSe monolayer, the inset is the differential charge density, where the red and blue mean accumulation and depletion of electrons, respectively^[110]; (b) band structures of monolayer Janus MXY are given by HSE and SOC methods^[111]; (c) linear changes of in-plane and out-of-plane piezoelectric polarizations of the MoSTe monolayer occur when subject to a uniaxial strain ε₁ between –0.5% and 0.5%, giving its e₁₁ and e₃₁ values (unit: 10^–10C/m)^[74].

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图 3 (a)Janus硅的晶体结构(俯视图和侧视图)及其第一布里渊区^[132]; (b)单层Janus M₂XY单层的俯视图和侧视图以及及其第一布里渊区^[138]; (c)Janus III族硫化物单层离子弛豫的压电系数d₁₁和d₃₁^[139]; (d)b(zigzag)方向上的单轴应变引起的铁弹性转变(上图), 在armchair方向的单轴应变下2H VSSe单层的面内和面外压电极化的线性变化(下图)^[150]

Figure 3. (a) Crystal structure of Janus silicene (top and side view) and their first Briliouin zone^[132]; (b) top and side view of a single-layer Janus M₂XY monolayer, the reciprocal lattice vectors and high-symmetry points are also presented; (c) relaxed-ion piezoelectric coefficients d₁₁ and d₃₁ of Janus group-III chalcogenide monolayers^[139]; (d) energy profiles of ferroelastic switching as a function of uniaxial strains in the b (zigzag) direction, linear changes in the in-plane and out-of-plane piezoelectric polarizations of the 2H VSSe monolayer under uniaxial strain (armchair)^[150].

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图 4 (a) SPtSe/Gr和SePtS/Gr异质结中的肖特基势垒高度随层间距的变化^[184]; (b) SPtSe/Gr和SePtS/Gr异质结中的肖特基势垒高度随外加电场的变化^[184]; (c) 在K/K'点的能带偏移的示意图, (I)ΔE_V > λ_V的类别1和(II)ΔE_V < λ_V的类别2, 对于具有界面I₂的(III)H相和(IV)R相WSSe/MoSSe vdW异质结构在K/K'点的的谷极化层间激子弛豫通道^[180]; (d) GeC, MoSSe, WSSe及其对应的异质结的价带(VB)和导带(CB)边对齐^[190]

Figure 4. (a) Schottky barrier height in the SPtSe/Gr and SePtS/Gr heterostructures as a function of the interlayer spacing, respectively; (b) Schottky barrier height in the SPtSe/Gr and SePtS/Gr heterostructures as a function of the external electric field, respectively^[184]; (c) schematic diagram for band offset at K/K′ point, (I) category 1 with ΔE_V > λ_V and (II) category 2 with ΔE_V < λ_V, valley polarized interlayer exciton relaxation channels at K/K′point for (III) H-phase and (IV) R-phase WSSe/MoSSe vdW heterostructures with interface I₂^[180]; (d) valence band (VB) and conduction band (CB) edge alignment of GeC, MoSSe, WSSe and their corresponding heterostructures^[190].

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