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The analysis of the frequency dispersion characteristics of the gate-drain capacitance of GaN HEMT indicates that the gate fringe capacitance is responsible for the dispersion difference between the gate-drain capacitance and circle Schottky diode. By fitting the relationship between the additional capacitance of trap and frequency, we discover that the additional capacitance of trap can meet single energy level model only under small gate bias, and meet both single and consecutive energy level model under strong reverse gate bias. The gate fringe capacitance dispersion appears after SiN passivation. It suggests that the trap observed by fringe capacitance is introduced by passivation, which lies in the surface of the ungated region between source and drain. Finally, the low frequency noise technology is used to validate the feasibility of abstracting trap parameter by the gate fringe capacitance. The time constant of single energy level trap obtained by low frequency noise technology is consistent with the result obtained by the gate fringe capacitance under strong reverse gate bias.
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Keywords:
- HEMT /
- fringe capacitance /
- trap /
- low frequency noise
[1] Waltereit P, Bronner W, Kiefer R, Quay R, Kühn J, Van Raay F, Dammann M, Müller S, Libal C, Meier T, Mikulla M,Ambacher O 2010 CS MANTECH Conference Oregon Portland, USA, May 17th—20th, 2010 p137
[2] Del Alamo J A,Joh J 2009 Microelectron. Reliab. 49 1200
[3] Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H,Tao X M 2006 Appl. Phys. Lett. 89 3
[4] Burgaud P, Constancias L, Martel G, Savina C,Mesnager D 2007 Microelectron. Reliab. 47 1653
[5] Chou Y C, Leung D, Smorchkova I, Wojtowicz M, Grundbacher R, Callejo L, Kan Q, Lai R, Liu P H, Eng D,Oki A 2004 Microelectron. Reliab. 44 1033
[6] Park S Y, Floresca C, Chowdhury U, Jimenez J L, Lee C, Beam E, Saunier P, Balistreri T,Kim M J 2009 Microelectron. Reliab. 49 478
[7] Dammann M, Pletschen W, Waltereit P, Bronner W, Quay R, Müller S, Mikulla M, Ambacher O, van der Wel P J, Murad S, Rödle T, Behtash R, Bourgeois F, Riepe K, Fagerlind M,Sveinbjörnsson E 2009 Microelectron. Reliab. 49 474
[8] Vetury R, Zhang N Q Q, Keller S,Mishra U K 2001 IEEE Trans. Electron Devices 48 560
[9] Conway A M, Chen M, Hashimoto P, Willadsen P J,Micovic M CS MANTECH Conference, Texas Austin, USA, May 14—17 p99
[10] Liu W L, Chen Y L, Balandin A A,Wang K L 2006 J.Nanoelectron.Optoelectron. 1 258
[11] Shealy J R,Brown R J 2008 Appl. Phys. Lett. 92 032101
[12] Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K,Wei K 2010 Chin. Phys. B 19 097302
[13] Zhang J F, Wang C, Zhang J C,Hao Y 2006 Chin. Phys. 15 1060
[14] Qian L, Jiangfeng D, Mohua Y, Shenghui L, Wei Z, Jianxin X,Qi Y 2000 the 8th International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, Oct 23—26 p923
[15] Balandin A, Morozov S V, Cai S, Li R, Wang K L, Wijeratne G,Viswanathan C R 1999 IEEE Trans. Microw. Theory Tech. 47 1413
[16] Rice A K,Malloy K J 2000 J. Appl. Phys. 87 7892
[17] Bouya M, Malbert N, Labat N, Carisetti D, Perdu P, Clément J C, Lambert B,Bonnet M 2008 Microelectron. Reliab. 48 1366
[18] Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J,Redwing J M 2000 J. Appl. Phys. 87 8070
[19] Kokorev M F,Maleev N A 1996 Solid State Electron. 39 297
[20] Parvesh G, Sujata P, Subhasis H, Mridula G,Gupta R S 2007 Microelectron. J. 38 848
[21] Gangwani P, Gupta M, Kaur R, Pandey S, Haldar S,Gupta R S Asia-Pacific Microwave Conference, Hong Kong, China, Dec 16—20 p1
[22] Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (1st ed) (New York: Wiley Interscience) p928
[23] Goetzberger E H N a A 1968 Microelectron. Reliab. 7
[24] Hashizume T, Alekseev E, Pavlidis D, Boutros K S,Redwing J 2000 J. Appl. Phys. 88 1983
[25] Balandin A, Morozov S, Wijeratne G, Cai S J, Li R, Li J, Wang K L, Viswanathan C R,Dubrovskii Y 1999 Appl. Phys. Lett. 75 2064
[26] Rumyantsev S L, Pala N, Shur M S, Borovitskaya E, Dmitriev A P, Levinshtein M E, Gaska R, Khan M A, Jinwei Y, Xuhong H,Simin G 2001 IEEE Trans. Electron Devices 48 530
[27] Levinshtein M E 15th International Conference on Noise in Physical Systems and 1/f Fluctuations Hong Kong,China, August 23—26 p213
[28] Jones B K 1994 IEEE Trans. Electron Devices 41 2188
[29] Vandamme L K J 1994 IEEE Trans. Electron Devices 41 2176
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[1] Waltereit P, Bronner W, Kiefer R, Quay R, Kühn J, Van Raay F, Dammann M, Müller S, Libal C, Meier T, Mikulla M,Ambacher O 2010 CS MANTECH Conference Oregon Portland, USA, May 17th—20th, 2010 p137
[2] Del Alamo J A,Joh J 2009 Microelectron. Reliab. 49 1200
[3] Wang R X, Xu S J, Shi S L, Beling C D, Fung S, Zhao D G, Yang H,Tao X M 2006 Appl. Phys. Lett. 89 3
[4] Burgaud P, Constancias L, Martel G, Savina C,Mesnager D 2007 Microelectron. Reliab. 47 1653
[5] Chou Y C, Leung D, Smorchkova I, Wojtowicz M, Grundbacher R, Callejo L, Kan Q, Lai R, Liu P H, Eng D,Oki A 2004 Microelectron. Reliab. 44 1033
[6] Park S Y, Floresca C, Chowdhury U, Jimenez J L, Lee C, Beam E, Saunier P, Balistreri T,Kim M J 2009 Microelectron. Reliab. 49 478
[7] Dammann M, Pletschen W, Waltereit P, Bronner W, Quay R, Müller S, Mikulla M, Ambacher O, van der Wel P J, Murad S, Rödle T, Behtash R, Bourgeois F, Riepe K, Fagerlind M,Sveinbjörnsson E 2009 Microelectron. Reliab. 49 474
[8] Vetury R, Zhang N Q Q, Keller S,Mishra U K 2001 IEEE Trans. Electron Devices 48 560
[9] Conway A M, Chen M, Hashimoto P, Willadsen P J,Micovic M CS MANTECH Conference, Texas Austin, USA, May 14—17 p99
[10] Liu W L, Chen Y L, Balandin A A,Wang K L 2006 J.Nanoelectron.Optoelectron. 1 258
[11] Shealy J R,Brown R J 2008 Appl. Phys. Lett. 92 032101
[12] Wang X H, Zhao M, Liu X Y, Pu Y, Zheng Y K,Wei K 2010 Chin. Phys. B 19 097302
[13] Zhang J F, Wang C, Zhang J C,Hao Y 2006 Chin. Phys. 15 1060
[14] Qian L, Jiangfeng D, Mohua Y, Shenghui L, Wei Z, Jianxin X,Qi Y 2000 the 8th International Conference on Solid-State and Integrated Circuit Technology Shanghai, China, Oct 23—26 p923
[15] Balandin A, Morozov S V, Cai S, Li R, Wang K L, Wijeratne G,Viswanathan C R 1999 IEEE Trans. Microw. Theory Tech. 47 1413
[16] Rice A K,Malloy K J 2000 J. Appl. Phys. 87 7892
[17] Bouya M, Malbert N, Labat N, Carisetti D, Perdu P, Clément J C, Lambert B,Bonnet M 2008 Microelectron. Reliab. 48 1366
[18] Miller E J, Dang X Z, Wieder H H, Asbeck P M, Yu E T, Sullivan G J,Redwing J M 2000 J. Appl. Phys. 87 8070
[19] Kokorev M F,Maleev N A 1996 Solid State Electron. 39 297
[20] Parvesh G, Sujata P, Subhasis H, Mridula G,Gupta R S 2007 Microelectron. J. 38 848
[21] Gangwani P, Gupta M, Kaur R, Pandey S, Haldar S,Gupta R S Asia-Pacific Microwave Conference, Hong Kong, China, Dec 16—20 p1
[22] Nicollian E H,Brews J R 1982 MOS (Metal Oxide Semiconductor) Physics and Technology (1st ed) (New York: Wiley Interscience) p928
[23] Goetzberger E H N a A 1968 Microelectron. Reliab. 7
[24] Hashizume T, Alekseev E, Pavlidis D, Boutros K S,Redwing J 2000 J. Appl. Phys. 88 1983
[25] Balandin A, Morozov S, Wijeratne G, Cai S J, Li R, Li J, Wang K L, Viswanathan C R,Dubrovskii Y 1999 Appl. Phys. Lett. 75 2064
[26] Rumyantsev S L, Pala N, Shur M S, Borovitskaya E, Dmitriev A P, Levinshtein M E, Gaska R, Khan M A, Jinwei Y, Xuhong H,Simin G 2001 IEEE Trans. Electron Devices 48 530
[27] Levinshtein M E 15th International Conference on Noise in Physical Systems and 1/f Fluctuations Hong Kong,China, August 23—26 p213
[28] Jones B K 1994 IEEE Trans. Electron Devices 41 2188
[29] Vandamme L K J 1994 IEEE Trans. Electron Devices 41 2176
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