| [1] |
Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue. Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2024, 73(3): 036103.
doi: 10.7498/aps.73.20221360
|
| [2] |
Yang Wei-Tao, Wu Yi-Chen, Xu Rui-Ming, Shi Guang, Ning Ti, Wang Bin, Liu Huan, Guo Zhong-Jie, Yu Song-Lin, Wu Long-Sheng. Geant4 simulation of Hg1–xCdxTe infrared focal plane array image sensor space proton displacement damage and total ionizing dose effects. Acta Physica Sinica,
2024, 73(23): 232402.
doi: 10.7498/aps.73.20241246
|
| [3] |
Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao. Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica,
2021, 70(16): 168501.
doi: 10.7498/aps.70.20210368
|
| [4] |
Yan Da-Wei, Tian Kui-Kui, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Li Jin-Xiao, Cao Yan-Rong, Gu Xiao-Feng. Forward current transport and noise behavior of GaN Schottky diodes. Acta Physica Sinica,
2021, 70(8): 087201.
doi: 10.7498/aps.70.20201467
|
| [5] |
Wang Dang-Hui, Xu Tian-Han. Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica,
2019, 68(12): 128104.
doi: 10.7498/aps.68.20190189
|
| [6] |
Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang. Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica,
2017, 66(23): 237101.
doi: 10.7498/aps.66.237101
|
| [7] |
Cao Jiang-Wei, Wang Rui, Wang Ying, Bai Jian-Min, Wei Fu-Lin. Measurement and study of low-frequency noise in TMR magnetic field sensor. Acta Physica Sinica,
2016, 65(5): 057501.
doi: 10.7498/aps.65.057501
|
| [8] |
Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
2015, 64(5): 050701.
doi: 10.7498/aps.64.050701
|
| [9] |
Wang Kai, Liu Yuan, Chen Hai-Bo, Deng Wan-Ling, En Yun-Fei, Zhang Ping. Low frequency noise behaviors in the partially depleted silicon-on-insulator device. Acta Physica Sinica,
2015, 64(10): 108501.
doi: 10.7498/aps.64.108501
|
| [10] |
Liu Yuan, Chen Hai-Bo, He Yu-Juan, Wang Xin, Yue Long, En Yun-Fei, Liu Mo-Han. Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors. Acta Physica Sinica,
2015, 64(7): 078501.
doi: 10.7498/aps.64.078501
|
| [11] |
Wang Ai-Di, Liu Zi-Yu, Zhang Pei-Jian, Meng Yang, Li Dong, Zhao Hong-Wu. Low frequency noise analysis and resistance relaxation in Au/SrTiO3/Au for bipolar resistive switching. Acta Physica Sinica,
2013, 62(19): 197201.
doi: 10.7498/aps.62.197201
|
| [12] |
Zhang Shan, Hu Xiao-Ning. Deep levels of HgCdTe diodes on Si substrates. Acta Physica Sinica,
2011, 60(6): 068502.
doi: 10.7498/aps.60.068502
|
| [13] |
Yu Si-Yao, Guo Shu-Xu, Gao Feng-Li. Calculation of the Lyapunov exponent for low frequency noise in semiconductor laser and chaos indentification. Acta Physica Sinica,
2009, 58(8): 5214-5217.
doi: 10.7498/aps.58.5214
|
| [14] |
Qiao Hui, Liao Yi, Hu Wei-Da, Deng Yi, Yuan Yong-Gang, Zhang Qin-Yao, Li Xiang-Yang, Gong Hai-Mei. Real-time study of γ irradiation on Hg1-xCdxTe focal plane photodiodes. Acta Physica Sinica,
2008, 57(11): 7088-7093.
doi: 10.7498/aps.57.7088
|
| [15] |
Yang Jun, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Wang Bo. Influence of deep level defects on electrical compensation in semi-insulating InP materials. Acta Physica Sinica,
2007, 56(2): 1167-1171.
doi: 10.7498/aps.56.1167
|
| [16] |
Yue Fang-Yu, Shao Jun, Wei Yan-Feng, Lü Xiang, Huang Wei, Yang Jian-Rong, Chu Jun-Hao. Temperature-dependent absorption spectra investigation of shallow levels in HgCdTe grown by liquid phase epitaxy. Acta Physica Sinica,
2007, 56(5): 2878-2881.
doi: 10.7498/aps.56.2878
|
| [17] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
doi: 10.7498/aps.55.1407
|
| [18] |
Sun Li-Zhong, Chen Xiao-Shuang, Zhou Xiao-Hao, Sun Yan-Lin, Quan Zhi-Jue, Lu Wei. First-principles calculations on the mercury vacancy in Hg050.5 Cd050.5Te. Acta Physica Sinica,
2005, 54(4): 1756-1761.
doi: 10.7498/aps.54.1756
|
| [19] |
Ran Guang-Zhao, Chen Yuan, Chen Kai-Ｍao, Zhang Xiao-Lan, Liu Hong-Fei. Highly deep levels in solid C70/p-GaAs structures. Acta Physica Sinica,
2004, 53(10): 3498-3503.
doi: 10.7498/aps.53.3498
|
| [20] |
YUAN XIAN-ZHANG, PEI HUI-YUAN, LU WEI, LI NING, SHI GUO-LIANG, FANG JIA-XIONG, SHEN XUE-CHU. INFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te. Acta Physica Sinica,
2001, 50(4): 775-778.
doi: 10.7498/aps.50.775
|
下载:
