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Meng Shao-Yi, Hao Qi, Wang Bing, Duan Ya-Juan, Qiao Ji-Chao. Effects of cooling rate on β relaxation process and stress relaxation of La-based amorphous alloys. Acta Physica Sinica,
2024, 73(3): 036101.
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Liu Nai-Zhang, Zhang Xue-Bing, Yao Ruo-He. The physics-based model of AlGaN/GaN high electron mobility transistor outer fringing capacitances. Acta Physica Sinica,
2020, 69(7): 077302.
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Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan. Radiation effect and degradation mechanism in 65 nm CMOS transistor. Acta Physica Sinica,
2018, 67(14): 146103.
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Qi Wei-Jing, Zhang Meng, Pan Shuan, Wang Xiao-Lan, Zhang Jian-Li, Jiang Feng-Yi. Influences of InGaN/GaN superlattice thickness on the electronic and optical properties of GaN based blue light-emitting diodes grown on Si substrates. Acta Physica Sinica,
2016, 65(7): 077801.
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Liu Hai-Jun, Tian Xiao-Bo, Li Qing-Jiang, Sun Zhao-Lin, Diao Jie-Tao. Research on radiation damage in titanium oxide memristors by Monte Carlo method. Acta Physica Sinica,
2015, 64(7): 078401.
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Wang Yu-Zhen, Ma Ying, Zhou Yi-Chun. Molecular dynamics study of epitaxial compressive strain influence on the radiation resistance of BaTiO3 ferroelectrics. Acta Physica Sinica,
2014, 63(24): 246101.
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Ma Wu-Ying, Lu Wu, Guo Qi, He Cheng-Fa, Wu Xue, Wang Xin, Cong Zhong-Chao, Wang Bo, Maria. Analyses of ionization radiation damage and dose rate effect of bipolar voltage comparator. Acta Physica Sinica,
2014, 63(2): 026101.
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Ma Guo-Liang, Li Xing-Ji, Liu Hai, Liu Chao-Ming, Yang Jian-Qun, He Shi-Yu. Effect of grain size on energy deposition process in Ni metal during 1 MeV electron irradiation. Acta Physica Sinica,
2013, 62(9): 091401.
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Li Xing-Ji, Liu Chao-Ming, Sun Zhong-Liang, Lan Mu-Jie, Xiao Li-Yi, He Shi-Yu. Radiation damage induced by various particles on CC4013 devices. Acta Physica Sinica,
2013, 62(5): 058502.
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Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen. Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica,
2012, 61(22): 227302.
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Wang Yi-Yuan, Lu Wu, Ren Di-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa, Gao Bo. Degradation and dose rate effects of bipolar linearregulator on ionizing radiation. Acta Physica Sinica,
2011, 60(9): 096104.
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Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke. The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica,
2011, 60(4): 047101.
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Wang Xin-Hua, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Zheng Ying-Kui, Wei Ke, Liu Xin-Yu. Investigation on trap by the gate fringecapacitance in GaN HEMT. Acta Physica Sinica,
2011, 60(9): 097101.
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Zheng Yu-Zhan, Lu Wu, Ren Di-Yuan, Wang Yi-Yuan, Guo Qi, Yu Xue-Feng, He Cheng-Fa. Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinica,
2009, 58(8): 5572-5577.
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Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan. Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica,
2007, 56(5): 2895-2899.
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He Bao-Ping, Chen Wei, Wang Gui-Zhen. A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica,
2006, 55(7): 3546-3551.
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Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica,
2006, 55(7): 3677-3682.
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Meng Kang, Jiang Sen-Lin, Hou Li-Na, Li Chan, Wang Kun, Ding Zhi-Bo, Yao Shu-De. Study of radiation damage in Mg+-implanted GaN. Acta Physica Sinica,
2006, 55(5): 2476-2481.
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He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong. Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment. Acta Physica Sinica,
2004, 53(9): 3125-3129.
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MU WEI-BING, CHEN PAN-XUN. MONTE-CARLO CALCULATION OF X-RAY DOSE ENHANCEMENT FACTOR NEARBY HIGH Z METAL CONNECTED INTERFACE. Acta Physica Sinica,
2001, 50(2): 189-192.
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