Low frequency noise analysis and resistance relaxation in Au/SrTiO3/Au for bipolar resistive switching

Wang Ai-Di; Liu Zi-Yu; Zhang Pei-Jian; Meng Yang; Li Dong; Zhao Hong-Wu

doi:10.7498/aps.62.197201

Abstract

The resistance relaxation in Au/SrTiO3/Au sandwiches with bipolar resistance switching has been investigated by the low frequency analysis. The power spectral density of the conducting current fluctuation in the high resistance state and the low resistance state shows 1/f behaviors. By contrast experiment, the low frequency noise for the high resistance state is ascribed to the Schottky barrier under reverse bias and the oxygen vacancy diffusion, while the noise in the low resistance state is due to the carriers fluctuation arising from the oxygen vacancy migration. The resistance relaxation can be further understood as the diffusion of oxygen vacancies under an electric field.

Keywords:

Authors and contacts

1.
Beijing General Research Institute of Mining and Metallurgy, Beijing 100160, China;
2.
BGRIMM Advanced Materials Science &Technology Co., Ltd, Beijing 102206, China;
3.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930803, 2013CB921700), and the National Natural Science Foundation of China (Grant No. 10834012).

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Cited By

[1]	Waser R, Aono M 2007 Nature materials 6 833
[2]	Yang J J, Pickett M D, Li X, Ohlberg D A A, Stewart D R, Williams R S 2008 Nanotechnology 3 429
[3]	Waser R, Dittmann R, Staikov G, Szot K 2009 Adv. Mater. 21 2632
[4]	Strachan J P, Pickett M D, Yang J J, Aloni S, Kilcoyne A L D, Ribeiro G M, Williams R S 2010 Adv. Mater. 22 3573
[5]	Miao F, Yang J J, Borghetti J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254007
[6]	Valov I, Waser R, Jameson J R, Kozicki M N 2011 Nanotechnology 22 254003
[7]	Strachan J P, Strukov D B, Borghetti J, Yang J J, Ribeiro G M, Williams R S 2011 Nanotechnology 22 254015
[8]	Szot K, Rogala M, Speier W, Klusek Z, Besmehn A, Waser R 2011 Nanotechnology 22 254001
[9]	Kim K M, Jeong D S, Huang C S 2011 Nanotechnology 22 254002
[10]	Pennetta C, Trefan T, Reggiani L 2000 Phys. Rev. Lett. 85 5238
[11]	Li S L, Liao Z L, Li J, Gang J L, Zheng D N 2009 Journal of Physics D: Applied Physics 42 045411
[12]	Sasaki M, 2012 J. Appl. Phys. 112 014501
[13]	Nian Y B, Strozier J, Wu N J, Chen X, Ignatiev A 2007 Phys. Rev. Lett. 98 146403
[14]	Schulman A, Rozenberg M J, Acha C 2012 Phys. Rev. B 86 104426
[15]	Ielmini D, Nardi F, Cagli C 2010 Appl. Phys. Lett. 96 053503
[16]	Lee J K, Lee J W, Park J, Chung S W, Roh J S, Hong S J, Cho I W, Kwon H I, Lee J H 2011 Appl. Phys. Lett. 98 143502
[17]	Lee S B, Park S, Lee J S, Chae S C, Chang S H, Jung M H, Jo Y, Kahng B, Kang B S, Lee M J, Noh T W 2009 Appl. Phys. Lett. 95 122112
[18]	Maccaronio V, Crupi F, Procel L M, Goux L, Simoen E, Trojman L, Miranda E 2013 Microelectronic Engineering 107 1
[19]	Zhang P J, Meng Y, Liu Z Y, Li D, Su T, Meng Q Y, Mao Q, Pan X Y, Chen D M, Zhao H W 2012 J. Appl. Phys. 111 063702
[20]	Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106
[21]	Weissman M B 1988 Reviews of Moden Physics 60 537
[22]	Lee M S, Lee J K, Hwang H S, Shin H C, Park B G, Park Y J, Lee J H 2011 Japanese Journal of Applied Physics 50 011501
[23]	Park C H, Lee J H 2012 Solid-State Electronics 69 85
[24]	Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mater. 19 2232

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Vol. 62, Issue 19 - 2013-10-05

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