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Based on the analysis of thermal electron emission, the model of the carrier mobility fluctuation and the white noise theory, the effect of electrostatic discharge (ESD) on the I-V and low frequency noise of Schottky barrier diode (SBD) is discussed in this paper. The different Human Body Model(HBM) ESD injected times with the same voltage peaks are applied to the cathode and anode separately. It is found that the diode subjected to the cathode stress shows greater degradation than subjected to the anode stress, and the magnitude of noise shows significant change. With the increase of ESD injected times, the forward characteristic has no change, while reverse current almost increases at each time. The magnitudes of forward and reverse 1/f noise increase all the time. In view of the relationship between defects and damage, and the noise sensibility, the low frequency noise can serve as a tool for researching the sensitivity to the electrostatic discharge damage of SBD.
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Keywords:
- Schottky barrier diodes /
- low frequency noise /
- ESD
[1] Yang L X, Du L, Bao J L, Zhuang Y Q, Chen X D, Li Q W, Zhang Y, Zhao Z G, He L 2008 Acta Phys. Sin. 57 5869 (in chinese) [杨丽侠, 杜磊, 包军林, 庄奕琪, 陈晓东, 李群伟, 张莹, 赵志刚, 何亮 2008 57 5869]
[2] Chen X D 2009 MS Thesis (Xi'an: XiDian University) (in Chinese) [陈晓东 2009 硕士学位论文 (西安：西安电子科技大学)]
[3] Wang Y H, Yu Z G, Sun Z J 2007 Reliability Design of Electronic Components (Beijing: Science Press) pp1-280 (in Chinese) [王蕴辉, 于宗光, 孙再吉 2007 电子元器件可靠性设计 (北京:科学出版社) 第1-280页]
[4] Liu S H 2004 Electrostatic Discharge and Damage Protection (Bei Jing: Beijing University of Posts and Telecommunications Press) p2 (in Chinese) [刘尚合 2004 静电放电及危害防护 (北京: 北京邮电大学出版社) 第2页]
[5] Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L 2007 Acta Phys. Sin. 56 3483 (in Chinese) [刘杰, 郝跃, 冯倩, 王冲, 张进城, 郭亮良 2007 56 3483]
[6] Neamen D A (Translated by Zhao Y Q, Yao S Y, Xie X D et al.) 2005 Semiconductor Physics Devices (Beijing: Publishing House of Electronics Industry) pp239-241 (in Chinese) [Donald A. Neamen著 赵毅强, 姚素英, 解晓东等译 2005 半导体物理与器件 (北京：电子工业出版社)第239-241页]
[7] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: National Defense Industry Press) pp186-188 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学(北京: 国防工业出版社) 第186-188页]
[8] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Acta Phys. Sin. 58 2738 (in Chinese) [张林, 张义门, 张玉明, 韩超, 马永吉 2009 58 2738]
[9] Hadzi-Vukovic J M, Jevtic M M 2007 Diamond Relat. Mate. 16 81
[10] Chang Y C, Zhang Y M, Zhang Y M 2001 Xidian Sin. 28 467 (in Chinese) [常远程, 张义门, 张玉明 2001 西安电子科技大学学报 28 467]
[11] Yang J, Liu S H, Liu H B, Qi S F 2007 Hebei Uni. Sin. 27 620 (in Chinese) [杨洁, 刘尚合, 刘红兵, 祁树锋 2007 河北大学学报 (自然科学版) 27 620]
[12] Hsu S T 1971 IEEE Trans Electron Devices 18 882
[13] Luo M Y, Bosman G, Van Der Ziel A, Hench L L 1988 IEEE Trans Electron Devices 35 1351
[14] Schiebel R A 1994 IEEE Trans Electron Devices 41 768
[15] Harris R D, Frasca A J 2006 IEEE Trans Nuclear Science 53 1995
[16] Zhuang Y Q, Sun Q 1993 Noise and its Minimizing Technology in Semiconductor Devices (Beijing: Nat ional Defense Industry Press) pp24-47 (in Chinese) [庄奕琪, 孙 青 1993 半导体器件中的噪声及其低噪声化技术 (北京：国防工业出版社) 第24-47页]
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[1] Yang L X, Du L, Bao J L, Zhuang Y Q, Chen X D, Li Q W, Zhang Y, Zhao Z G, He L 2008 Acta Phys. Sin. 57 5869 (in chinese) [杨丽侠, 杜磊, 包军林, 庄奕琪, 陈晓东, 李群伟, 张莹, 赵志刚, 何亮 2008 57 5869]
[2] Chen X D 2009 MS Thesis (Xi'an: XiDian University) (in Chinese) [陈晓东 2009 硕士学位论文 (西安：西安电子科技大学)]
[3] Wang Y H, Yu Z G, Sun Z J 2007 Reliability Design of Electronic Components (Beijing: Science Press) pp1-280 (in Chinese) [王蕴辉, 于宗光, 孙再吉 2007 电子元器件可靠性设计 (北京:科学出版社) 第1-280页]
[4] Liu S H 2004 Electrostatic Discharge and Damage Protection (Bei Jing: Beijing University of Posts and Telecommunications Press) p2 (in Chinese) [刘尚合 2004 静电放电及危害防护 (北京: 北京邮电大学出版社) 第2页]
[5] Liu J, Hao Y, Feng Q, Wang C, Zhang J C, Guo L 2007 Acta Phys. Sin. 56 3483 (in Chinese) [刘杰, 郝跃, 冯倩, 王冲, 张进城, 郭亮良 2007 56 3483]
[6] Neamen D A (Translated by Zhao Y Q, Yao S Y, Xie X D et al.) 2005 Semiconductor Physics Devices (Beijing: Publishing House of Electronics Industry) pp239-241 (in Chinese) [Donald A. Neamen著 赵毅强, 姚素英, 解晓东等译 2005 半导体物理与器件 (北京：电子工业出版社)第239-241页]
[7] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (Beijing: National Defense Industry Press) pp186-188 (in Chinese) [刘恩科, 朱秉升, 罗晋生 2008 半导体物理学(北京: 国防工业出版社) 第186-188页]
[8] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Acta Phys. Sin. 58 2738 (in Chinese) [张林, 张义门, 张玉明, 韩超, 马永吉 2009 58 2738]
[9] Hadzi-Vukovic J M, Jevtic M M 2007 Diamond Relat. Mate. 16 81
[10] Chang Y C, Zhang Y M, Zhang Y M 2001 Xidian Sin. 28 467 (in Chinese) [常远程, 张义门, 张玉明 2001 西安电子科技大学学报 28 467]
[11] Yang J, Liu S H, Liu H B, Qi S F 2007 Hebei Uni. Sin. 27 620 (in Chinese) [杨洁, 刘尚合, 刘红兵, 祁树锋 2007 河北大学学报 (自然科学版) 27 620]
[12] Hsu S T 1971 IEEE Trans Electron Devices 18 882
[13] Luo M Y, Bosman G, Van Der Ziel A, Hench L L 1988 IEEE Trans Electron Devices 35 1351
[14] Schiebel R A 1994 IEEE Trans Electron Devices 41 768
[15] Harris R D, Frasca A J 2006 IEEE Trans Nuclear Science 53 1995
[16] Zhuang Y Q, Sun Q 1993 Noise and its Minimizing Technology in Semiconductor Devices (Beijing: Nat ional Defense Industry Press) pp24-47 (in Chinese) [庄奕琪, 孙 青 1993 半导体器件中的噪声及其低噪声化技术 (北京：国防工业出版社) 第24-47页]
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