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A vertical organic light-emitting transistor (VOLET) was fabricated by stacking a capacitor cell on top of an organic light emitting cell joined by a common source electrode，and the operation mechanism was analyzed. This unique device has the dual functions of emitting light as an OLED and switching current as a transistor. When the capacitor is under bias, the stored charges on the thin and coarse electrode shared by the two units modulate the charge injection of the OLED active unit, hence control the current flow and consequently tune the light emission. This device structure provides an extremely short channel in the nanometer range and a large conduction area (004 cm2), which supply enough output current (up to 02 mA) to drive the light emitting unit. As a result, thanks to the vertical integration, this device not only realizes multifunction but also operates at lower voltage, which provides a navel solution for the active-matrix OLED display application.
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Keywords:
- organic light-emitting transistor /
- vertical /
- capacitor
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[2] ［2］Zhang L J, Hua Y L, Wu X M, Zhang G H, Wang Y, Yin S G 2008 Acta Phys. Sin. 57 1913 (in Chinese) ［张丽娟、华玉林、吴晓明、张国辉、王宇、印寿根 2008 57 1913］
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[4] ［4］Feng W, Cao M, Wei W, Wu H C, Wan M X, Katsumi Y 2001 Acta Phys. Sin. 50 1157 (in Chinese) ［封伟、曹猛、韦玮、吴洪才、万梅香、吉野胜美 2001 50 1157］
[5] ［5］Hu Y C, Dong G F, Wang L D, Liang Y, Qiu Y 2004 Chin. Phys. Lett. 21 723
[6] ［6］Lim S C, Kim S H, Chu H Y, Lee J H, Lee J I, Oh J Y, Kimb D, Zyung T 2005 Synth. Met. 151 197
[7] ［7］Ryu G S, Choe K B, Song C K 2006 Thin Solid Films 514 302
[8] ［8］Kudo K, Wang D X, Iizuka M, Kuniyoshi S, Tanaka K 2000 Synth. Met. 111 11
[9] ［9］Fujimoto K, Hiroi T, Kudo K, Nakamura M 2007 Adv. Mater. 19 525
[10] ］Ma L P，Yang Y 2004 Appl. Phys. Lett.85 5084
[11] ］Li S H, Xu Z, Ma L P, Chu C W, Yang Y 2007 Appl. Phys. Lett. 91 083507
[12] ］Takahashi T, Takenobu T，Takeya J，Iwasa Y 2006 Adv. Funct. Mater. 17 1623
[13] ］Xu Z, Li S H, Ma L P, Yang Y 2007 Appl. Phys. Lett. 91 092911
[14] ］Yang S Y, Du W S, Qi J R, Lou Z D 2009 Acta Phys. Sin. 58 3427 (in Chinese)［杨盛谊、杜文树、齐洁茹、娄志东 2009 58 342
[15] ］［15］Murdoch G B，Greine M，Helander M G，Wang Z B，Lu Z H 2008 Appl. Phys. Lett. 93 083309
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[1] ［1］Tang C W,Vanslyke S A 1987 Appl. Phys. Lett.51 913
[2] ［2］Zhang L J, Hua Y L, Wu X M, Zhang G H, Wang Y, Yin S G 2008 Acta Phys. Sin. 57 1913 (in Chinese) ［张丽娟、华玉林、吴晓明、张国辉、王宇、印寿根 2008 57 1913］
[3] ［3］Tsumura A, Koezuka H, Ando T 1986 Appl. Phys. Lett.49 1210
[4] ［4］Feng W, Cao M, Wei W, Wu H C, Wan M X, Katsumi Y 2001 Acta Phys. Sin. 50 1157 (in Chinese) ［封伟、曹猛、韦玮、吴洪才、万梅香、吉野胜美 2001 50 1157］
[5] ［5］Hu Y C, Dong G F, Wang L D, Liang Y, Qiu Y 2004 Chin. Phys. Lett. 21 723
[6] ［6］Lim S C, Kim S H, Chu H Y, Lee J H, Lee J I, Oh J Y, Kimb D, Zyung T 2005 Synth. Met. 151 197
[7] ［7］Ryu G S, Choe K B, Song C K 2006 Thin Solid Films 514 302
[8] ［8］Kudo K, Wang D X, Iizuka M, Kuniyoshi S, Tanaka K 2000 Synth. Met. 111 11
[9] ［9］Fujimoto K, Hiroi T, Kudo K, Nakamura M 2007 Adv. Mater. 19 525
[10] ］Ma L P，Yang Y 2004 Appl. Phys. Lett.85 5084
[11] ］Li S H, Xu Z, Ma L P, Chu C W, Yang Y 2007 Appl. Phys. Lett. 91 083507
[12] ］Takahashi T, Takenobu T，Takeya J，Iwasa Y 2006 Adv. Funct. Mater. 17 1623
[13] ］Xu Z, Li S H, Ma L P, Yang Y 2007 Appl. Phys. Lett. 91 092911
[14] ］Yang S Y, Du W S, Qi J R, Lou Z D 2009 Acta Phys. Sin. 58 3427 (in Chinese)［杨盛谊、杜文树、齐洁茹、娄志东 2009 58 342
[15] ］［15］Murdoch G B，Greine M，Helander M G，Wang Z B，Lu Z H 2008 Appl. Phys. Lett. 93 083309
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