Preparation and measurement of far-infrared electroluminescence emitter based on quantum confined acceptors

Liu Jing; Zheng Wei-Min; Song Ying-Xin; Chu Ning-Ning; Li Su-Mei; Cong Wei-Yan

doi:10.7498/aps.59.2728

Abstract

GaAs/AlAs triple-quantum-well samples were grown by molecular beam epitaxy, and the middle GaAs quantum-well layer was delta-doped at the well centre with Be shallow acceptors. Then the far-infrared Teraherz prototype emitter was fabricated using the samples. Electroluminescence (EL) and current-voltage characteristics (I-V) were measured at 4.5 K. In the EL spectrum, a wide peak was observed clear 222 cm-1, which is attributed to the Be acceptor’s radiative transitions from the excited odd-parity states to the ground state. Nevertheless, the emission signal was weakened by non-radiative relaxation processes. In the I-V curve, the negative differential resistance characteristic at the position of 0.72 and 1.86 V was also observed clearly. This is attributed to the resonant tunneling between Be acceptor 1s3/2(Γ6+Γ7) energy level in the middle quantum-well and the HH1 band in the left-side non-doping quantum-well, as well as the resonant tunneling between the HH band in the right-side non-doping quantum-well and Be acceptor 2p5/2(Γ6+Γ7) energy level.

Keywords:

Authors and contacts

1.
山东大学威海分校空间科学与物理学院，威海 264209

References

[1]	［1］Ma S H, Shi Y L, Xu X L, Yan W, Yang Y P, Wang L 2006 Acta Phys. Sin. 55 4091 (in Chinese) ［马士华、施宇蕾、徐新龙、严伟、杨玉平、汪力 2006 55 4091］
[2]	［2］Zhang X B, Shi W 2008 Acta Phys. Sin. 57 4984 (in Chinese) ［张显斌、施卫 2008 57 4984］
[3]	［3］Lafaye D G, Boucaud P, Julien F H, Prazeres R, Glotin F, Ortega J M, Thierry-Mieg V, Planel R 1997 Appl. Phys. Lett. 70 3197
[4]	［4］Muravjov A V, Withers S H, Pavlov S G, Shastin V N, Peale R E 1999 J. Appl. Phys. 86 3512
[5]	［5］Zhang T Y, Zhao W 2008 Chin. Phys. B 17 4285
[6]	［6］Xu G Y, Li A Z 2007 Acta Phys. Sin. 56 500 (in Chinese) ［徐刚毅、李爱珍 2007 56 500］
[7]	［7］Lin G J, Zhou Z W, Lai H K, Li C, Chen S Y, Yu J Z 2007 Acta Phys. Sin. 56 4137 (in Chinese) ［林桂江、周志文、赖虹凯、李成、陈松岩、余金中 2007 56 4137］
[8]	［8］Ting D Z, Chang Y C, Bandara S V, Gunapala S D 2007 Appl. Phys. Lett. 91 073510
[9]	［9］MujagiDc＇ E, Austerer M, Schartner S, Nobile M, Hoffmann L K, Schrenk W, Strasser G, Semtsiv M P, Bayrakli I, Wienold M, Masselink W T 2008 J. Appl. Phys. 103 033104
[10]	］Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015
[11]	］Harrison P, Halsall M P, Zheng W M 2002 Mater. Sci. Forum 384—385 165
[12]	］Harrison P, Kelsall R W 1997 J. Appl. Phys. 81 7135
[13]	］Halsall M P, Harrison P, Wells J P R, Bradley I V, Pellemans H 2001 Phys. Rev. B 63 155314
[14]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2002 J. Appl. Phys. 92 6039
[15]	］Orlova E E, Harrison P, Zhang W M, Halsall M P 2005 Semiconductors 39 67
[16]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2004 Appl. Phys. Lett. 84 735
[17]	］Seliuta D, ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite G, Grigelionis I, Balakauskas S, ValuDsˇis G, Sherliker B, Sherliker B, Halsall M P, Lachab M, Khanna S P, Harrison P, Linfieldc E H 2008 Acta Phys. Pol. A 113 909
[18]	］Huber R, Kaindl R A, Schmid B A, Chemla D S 2005 Phys. Rev. B 72 161314
[19]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ValuDsˇis G, Halsall M P, Steer M J, Harrison P 2005 J. Appl. Phys. 98 023508
[20]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ASˇUirmulis E, Devenson J, ValuAsˇis G, Sherliker B, Halsall M P, Steer M J, Harrison P 2005 Acta Phys. Pol. A 107 328
[21]	］Kundrotas J, ACˇUerDsˇkus A, ValuDsˇis G, Lachab M, Khanna S P, Harrison P, Linfield E H 2008 J. Appl. Phys. 103 123108
[22]	］Holtz P O, Sundaram M, Doughty K, Merz J L, Gossard A C 1989 Phys. Rev. B 40 12338
[23]	］Missous M 1995 J. Appl. Phys. 78 4467
[24]	］Zheng W M, Halsall M P, Harrison P, Steer M J 2006 Sci. China Ser. G 49 702
[25]	］Masselink W T, Chung C Y, Morkoc H 1985 Phys.Rev. B 32 5190
[26]	］Zheng W M, Halsall M P, Harrison P, Wells J P R, Bradley I V, Steer M J 2003 Appl. Phys. Lett. 83 3719
[27]	］Reeder A A, McCombe B D, Chambers F A, Devane G P 1988 Phys. Rev. B 38 4318
[28]	］Xia J B, Huang K 1988 Acta Phys. Sin. 37 1 (in Chinese) ［夏建白、黄昆 1988 37 1］

Cited By

[1]	［1］Ma S H, Shi Y L, Xu X L, Yan W, Yang Y P, Wang L 2006 Acta Phys. Sin. 55 4091 (in Chinese) ［马士华、施宇蕾、徐新龙、严伟、杨玉平、汪力 2006 55 4091］
[2]	［2］Zhang X B, Shi W 2008 Acta Phys. Sin. 57 4984 (in Chinese) ［张显斌、施卫 2008 57 4984］
[3]	［3］Lafaye D G, Boucaud P, Julien F H, Prazeres R, Glotin F, Ortega J M, Thierry-Mieg V, Planel R 1997 Appl. Phys. Lett. 70 3197
[4]	［4］Muravjov A V, Withers S H, Pavlov S G, Shastin V N, Peale R E 1999 J. Appl. Phys. 86 3512
[5]	［5］Zhang T Y, Zhao W 2008 Chin. Phys. B 17 4285
[6]	［6］Xu G Y, Li A Z 2007 Acta Phys. Sin. 56 500 (in Chinese) ［徐刚毅、李爱珍 2007 56 500］
[7]	［7］Lin G J, Zhou Z W, Lai H K, Li C, Chen S Y, Yu J Z 2007 Acta Phys. Sin. 56 4137 (in Chinese) ［林桂江、周志文、赖虹凯、李成、陈松岩、余金中 2007 56 4137］
[8]	［8］Ting D Z, Chang Y C, Bandara S V, Gunapala S D 2007 Appl. Phys. Lett. 91 073510
[9]	［9］MujagiDc＇ E, Austerer M, Schartner S, Nobile M, Hoffmann L K, Schrenk W, Strasser G, Semtsiv M P, Bayrakli I, Wienold M, Masselink W T 2008 J. Appl. Phys. 103 033104
[10]	］Williams B S, Callebaut H, Kumar S, Hu Q, Reno J L 2003 Appl. Phys. Lett. 82 1015
[11]	］Harrison P, Halsall M P, Zheng W M 2002 Mater. Sci. Forum 384—385 165
[12]	］Harrison P, Kelsall R W 1997 J. Appl. Phys. 81 7135
[13]	］Halsall M P, Harrison P, Wells J P R, Bradley I V, Pellemans H 2001 Phys. Rev. B 63 155314
[14]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2002 J. Appl. Phys. 92 6039
[15]	］Orlova E E, Harrison P, Zhang W M, Halsall M P 2005 Semiconductors 39 67
[16]	］Zheng W M, Halsall M P, Harmer P, Harrison P, Steer M J 2004 Appl. Phys. Lett. 84 735
[17]	］Seliuta D, ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite G, Grigelionis I, Balakauskas S, ValuDsˇis G, Sherliker B, Sherliker B, Halsall M P, Lachab M, Khanna S P, Harrison P, Linfieldc E H 2008 Acta Phys. Pol. A 113 909
[18]	］Huber R, Kaindl R A, Schmid B A, Chemla D S 2005 Phys. Rev. B 72 161314
[19]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ValuDsˇis G, Halsall M P, Steer M J, Harrison P 2005 J. Appl. Phys. 98 023508
[20]	］ACˇUechaviDcˇius B, Kavaliauskas J, Krivaite· G, Seliuta D, ASˇUirmulis E, Devenson J, ValuAsˇis G, Sherliker B, Halsall M P, Steer M J, Harrison P 2005 Acta Phys. Pol. A 107 328
[21]	］Kundrotas J, ACˇUerDsˇkus A, ValuDsˇis G, Lachab M, Khanna S P, Harrison P, Linfield E H 2008 J. Appl. Phys. 103 123108
[22]	］Holtz P O, Sundaram M, Doughty K, Merz J L, Gossard A C 1989 Phys. Rev. B 40 12338
[23]	］Missous M 1995 J. Appl. Phys. 78 4467
[24]	］Zheng W M, Halsall M P, Harrison P, Steer M J 2006 Sci. China Ser. G 49 702
[25]	］Masselink W T, Chung C Y, Morkoc H 1985 Phys.Rev. B 32 5190
[26]	］Zheng W M, Halsall M P, Harrison P, Wells J P R, Bradley I V, Steer M J 2003 Appl. Phys. Lett. 83 3719
[27]	］Reeder A A, McCombe B D, Chambers F A, Devane G P 1988 Phys. Rev. B 38 4318
[28]	］Xia J B, Huang K 1988 Acta Phys. Sin. 37 1 (in Chinese) ［夏建白、黄昆 1988 37 1］

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Vol. 59, Issue 4 - 2010-02-20

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