[1] |
Wang Jing-Li, Chen Zi-Yu, Chen He-Ming. Design of polarization-insensitive 1 × 2 multimode interference demultiplexer based on Si3N4/SiNx/Si3N4 sandwiched structure. Acta Physica Sinica,
2020, 69(5): 054206.
doi: 10.7498/aps.69.20191449
|
[2] |
Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei. Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica,
2018, 67(16): 168501.
doi: 10.7498/aps.67.20172215
|
[3] |
Liu Fu-Ti, Zhang Shu-Hua, Cheng Yan, Chen Xiang-Rong, Cheng Xiao-Hong. Theoretical calculation of electron transport properties of atomic chains of (GaAs)n (n=1-4). Acta Physica Sinica,
2016, 65(10): 106201.
doi: 10.7498/aps.65.106201
|
[4] |
Wei Qiang. Exploring the stereodynamics of C(3P)+NO(X2)CO(X1+)+N(4S) reaction on 4A potential energy surface. Acta Physica Sinica,
2015, 64(17): 173401.
doi: 10.7498/aps.64.173401
|
[5] |
Zhao Li, Liu Dong-Yang, Liu Dong-Mei, Chen Ping, Zhao Yi, Liu Shi-Yong. Analysis of organic photovoltaic devices with MoOx doped 4,4,4-tris(N-(3-methylphenyl)-N- phenylamin) triphenylamine as hole transport layer. Acta Physica Sinica,
2012, 61(8): 088802.
doi: 10.7498/aps.61.088802
|
[6] |
Li Bin, Liu Hong-Xia, Yuan Bo, Li Jin, Lu Feng-Ming. Model of electron mobility in inversion layer of strained Si/Si1-xGex n type metal-oxide-semiconductor field-effect transistors. Acta Physica Sinica,
2011, 60(1): 017202.
doi: 10.7498/aps.60.017202
|
[7] |
Zhai Ya-Hong, Li Ping, Zhang Guo-Jun, Luo Yu-Xiang, Fan Xue, Hu Bin, Li Jun-Hong, Zhang Jian, Su Ping. Radiation-resistant bipolar n-p-n transistor. Acta Physica Sinica,
2011, 60(8): 088501.
doi: 10.7498/aps.60.088501
|
[8] |
Duan Zi-Gang, Huang Xiao-Dong, Zhou Ning, Xu Guang-Hui, Chai Guang-Yue. Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser. Acta Physica Sinica,
2010, 59(9): 6193-6199.
doi: 10.7498/aps.59.6193
|
[9] |
Wu Xiao-Yan, Kong Ming, Li Ge-Yang, Zhao Wen-Ji. Crystallization of Si3N4 on h-AlN and superhardness effect of AlN/Si3N4 nanomultilayers. Acta Physica Sinica,
2009, 58(4): 2654-2659.
doi: 10.7498/aps.58.2654
|
[10] |
Chen Yu-Hong, Kang Long, Zhang Cai-Rong, Luo Yong-Chun, Pu Zhong-Sheng. Density functional theory study of the structures and properties of (Li3N)n(n=1—5) clusters. Acta Physica Sinica,
2008, 57(7): 4174-4181.
doi: 10.7498/aps.57.4174
|
[11] |
Kong Chao, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Huang Jin-Ying, Yan Guang, Li Jun-Ming. Solid state cathodoluminescence of poly (2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene vinylene in devices with Si3N4 as the electronic accelerating layer. Acta Physica Sinica,
2008, 57(12): 7891-7895.
doi: 10.7498/aps.57.7891
|
[12] |
Chen Yu-Hong, Kang Long, Zhang Cai-Rong, Luo Yong-Chun, Yuan Li-Hua, Li Yan-Long. Density functional theory study on the structures and properties of (Ca3N2)n(n=1—4) clusters. Acta Physica Sinica,
2008, 57(10): 6265-6270.
doi: 10.7498/aps.57.6265
|
[13] |
Zhao Wen-Ji, Dong Yun-Shan, Yue Jian-Ling, Li Ge-Yang. Crystallization of Si3N4 and superhardness effect of ZrN/Si3N4 nano-multilayers. Acta Physica Sinica,
2007, 56(1): 459-464.
doi: 10.7498/aps.56.459
|
[14] |
Wang Hua, Ren Ming-Fang. Memory characteristics of metal-ferroelectric-semiconductor field-effect-transistors with Ag/Bi4Ti3O12/p-Si gate. Acta Physica Sinica,
2006, 55(3): 1512-1516.
doi: 10.7498/aps.55.1512
|
[15] |
Chen Yu-Hong, Zhang Cai-Rong, Ma Jun. Density functional theory study on the structure and properties of MgmBn(m=1,2;n=1—4) clusters. Acta Physica Sinica,
2006, 55(1): 171-178.
doi: 10.7498/aps.55.171
|
[16] |
He Li-Ming, Cao Wei, Chen Xue-Qian, Zhu Yun-Xia. Calculation of helium 1D—3D term intervals for 1snd(n=4—11) states. Acta Physica Sinica,
2005, 54(11): 5077-5081.
doi: 10.7498/aps.54.5077
|
[17] |
RAN QIN, SHU JI-NIAN, PEI LIN-SEN, CHEN CONG-XIANG, YU SHU-QIN, MA XING-XIAO, WU GUO-HUA, SHENG LIU-SI, ZHANG YUN-WU. PHOTOIONIZATION OF (CH3I)n(n=1,2,3,4) USING SYNCHROTRON RADIATION. Acta Physica Sinica,
1997, 46(8): 1473-1478.
doi: 10.7498/aps.46.1473
|
[18] |
DUAN YU-HUA, ZHANG KAI-MING, XIE XI-DE. BAND STRUCTURAL PROPERTIES OF β-C3N4, β-Si3N4 AND β-Ge3N4. Acta Physica Sinica,
1996, 45(3): 512-517.
doi: 10.7498/aps.45.512
|
[19] |
ZOU NAN-ZHI, GONG CHANG-DE. SIZE EFFECT IN THE FILM OF n-VECTOR MODEL. Acta Physica Sinica,
1989, 38(2): 218-227.
doi: 10.7498/aps.38.218
|
[20] |
LIANG JING-KUI, ZHANG YU-LING, HUANG JIU-QI, XIE SI-SHEN, CHE GUAN-CHAN, CHEN XiANG-RONG, NI YONG-MIN, ZHENG DONG-NING, JIA SHUN-LIAN. THE CRYSTAL STRUCTURES AND SUPERCONDUCTIVITY OF A NEW SERIES OF SUPERCONDUCTING PHASES. Acta Physica Sinica,
1989, 38(2): 264-272.
doi: 10.7498/aps.38.264
|