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Due to the excellent characteristics of field-effect transistor and its high absorption coefficient in the visible region, pentacene has been widely used in phototransistors. The channel length of the vertical transistor could be designed to be very short (on the order of nanometers). In this way, the device performances and its working frequency can be effectively improved, and the energy consumption can be reduced simultaneously. In this paper, we fabricate a kind of low-voltage pentacene photodetector ITO(S)/Pentacene/Al(G)/Pentacene/Au(D), based on the vertical transistor configuration. The threshold voltage and “on/off” current ratio are -0.9 V and 104 at a low working-voltage of -3 V, respectively. The pentacene photodetector ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene (80 nm)/Au exhibits a good p-type transistor behavior and low-voltage-controlling performance. The photosensitivity and responsivity vary with incident monochromatic light from 350 nm to 750 nm, and the photosensitivity peak of 308 is obtained at 350 nm with a responsivity of 219 mA·W-1, which is even higher than that of the standard Si-based photodetector under 350 nm incident light. Therefore, this work provides an easy way to fabricate a high sensitivity all-organic photodetector working at low voltages.
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Keywords:
- vertical transistor /
- organic photodetectors /
- responsivity /
- pentacene
[1] Yang S Y, Zou B S 2013 Org. Electron. 14 362
[2] Ben-Sasson A J, Greenman M, Roichman Y, Tessler N 2014 Isr. J. Chem. 54 568
[3] Yang S Y, Du W S, Qi J R, Lou Z D 2009 Acta Phys. Sin. 58 3427 (in Chinese) [杨盛谊, 杜文树, 齐洁茹, 娄志东 2009 58 3427]
[4] Mukherjee B, Mukherjee M, Choi Y, Pyo S 2010 Appl. Mater. Interfaces 2 1614
[5] Maiellaro G, Ragonese E, Gwoziecki R, Jacobs S, Marjanovic N, Chrapa M, Schleuniger J, Palmisano G 2014 IEEE. Trans. Circuits-I. 61 1036
[6] Chai Y H, Guo Y X, Bian W, Li W, Yang T, Yi M D, Fan Q L, Xie L H, Huang W 2014 Acta Phys. Sin. 63 027302 (in Chinese) [柴玉华, 郭玉秀, 卞伟, 李雯, 杨涛, 仪明东, 范曲立, 解令海, 黄维 2014 63 027302]
[7] Noh Y Y, Kim D Y 2007 Solid-State Electron. 51 1052
[8] Yang Y, Costa R C D, Fuchter M J, Campbell A J 2013 Nat. Photon. 7 634
[9] Yang D, Zhang L, Yang S Y, Zou B S 2013 IEEE Photon. J. 5 6801709
[10] Zhang L, Yang D, Yang S Y, Zou B S 2014 Appl. Phys. A 116 1511
[11] Yang C Y, Cheng S S, Ou T M, Wu M C, Wu C H, Chao C H, Lin S Y, Chan Y J 2007 IEEE Trans. Electron Dev. 54 1633
[12] Johnston D E, Yager K G, Nam C Y, Ocko B M, Black C T 2012 Nano Lett. 12 4181
[13] Giri G, Park S, Vosgueritchian M, Shulaker M M, Bao Z N 2014 Adv. Mater. 26 487
[14] Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y, Wu F 2012 Acta Phys. Sin. 61 218502 (in Chinese) [赵赓, 程晓曼, 田海军, 杜博群, 梁晓宇, 吴峰 2012 61 218502]
[15] Kim K H, Bae S Y, Kim Y S, Hur J A, Hoang M H, Lee T W, Cho M J, Kim Y, Kim M, Jin J I, Kim S J, Lee K, Lee S J, Choi D H 2011 Adv. Mater. 23 3095
[16] Okur S, Yakuphanoglu F,Stathatos E 2010 Microelectronic Engineering 87 635
[17] Liu X H, Dong G F, Duan L, Wang L D, Qiu Y 2012 J. Mater. Chem. 22 11836
[18] Kudo K, Wang D X, Iizuka M, Kuniyoshi S, Tanaka K 2000 Synth. Met. 111–112 11
[19] Nishizawa J, Terasaki T, Shibata J 1975 IEEE Trans. Electron Dev. ED-22 185
[20] Kang H S, Choi C S, Choi W Y, Kim D H, Seo K S 2004 Appl. Phys. Lett. 84 3780
[21] Saragi T P I, Pudzich R, Fuhrmann T, Salbeck J 2004 Appl. Phys. Lett. 84 2334
[22] Hamilton M C, Kanicki J 2004 IEEE J. Sel. Top. Quantum Electron. 10 840
[23] Blanchet G B, Fincher C R, Malajovich I 2003 J. Appl. Phys. 94 6181
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[1] Yang S Y, Zou B S 2013 Org. Electron. 14 362
[2] Ben-Sasson A J, Greenman M, Roichman Y, Tessler N 2014 Isr. J. Chem. 54 568
[3] Yang S Y, Du W S, Qi J R, Lou Z D 2009 Acta Phys. Sin. 58 3427 (in Chinese) [杨盛谊, 杜文树, 齐洁茹, 娄志东 2009 58 3427]
[4] Mukherjee B, Mukherjee M, Choi Y, Pyo S 2010 Appl. Mater. Interfaces 2 1614
[5] Maiellaro G, Ragonese E, Gwoziecki R, Jacobs S, Marjanovic N, Chrapa M, Schleuniger J, Palmisano G 2014 IEEE. Trans. Circuits-I. 61 1036
[6] Chai Y H, Guo Y X, Bian W, Li W, Yang T, Yi M D, Fan Q L, Xie L H, Huang W 2014 Acta Phys. Sin. 63 027302 (in Chinese) [柴玉华, 郭玉秀, 卞伟, 李雯, 杨涛, 仪明东, 范曲立, 解令海, 黄维 2014 63 027302]
[7] Noh Y Y, Kim D Y 2007 Solid-State Electron. 51 1052
[8] Yang Y, Costa R C D, Fuchter M J, Campbell A J 2013 Nat. Photon. 7 634
[9] Yang D, Zhang L, Yang S Y, Zou B S 2013 IEEE Photon. J. 5 6801709
[10] Zhang L, Yang D, Yang S Y, Zou B S 2014 Appl. Phys. A 116 1511
[11] Yang C Y, Cheng S S, Ou T M, Wu M C, Wu C H, Chao C H, Lin S Y, Chan Y J 2007 IEEE Trans. Electron Dev. 54 1633
[12] Johnston D E, Yager K G, Nam C Y, Ocko B M, Black C T 2012 Nano Lett. 12 4181
[13] Giri G, Park S, Vosgueritchian M, Shulaker M M, Bao Z N 2014 Adv. Mater. 26 487
[14] Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y, Wu F 2012 Acta Phys. Sin. 61 218502 (in Chinese) [赵赓, 程晓曼, 田海军, 杜博群, 梁晓宇, 吴峰 2012 61 218502]
[15] Kim K H, Bae S Y, Kim Y S, Hur J A, Hoang M H, Lee T W, Cho M J, Kim Y, Kim M, Jin J I, Kim S J, Lee K, Lee S J, Choi D H 2011 Adv. Mater. 23 3095
[16] Okur S, Yakuphanoglu F,Stathatos E 2010 Microelectronic Engineering 87 635
[17] Liu X H, Dong G F, Duan L, Wang L D, Qiu Y 2012 J. Mater. Chem. 22 11836
[18] Kudo K, Wang D X, Iizuka M, Kuniyoshi S, Tanaka K 2000 Synth. Met. 111–112 11
[19] Nishizawa J, Terasaki T, Shibata J 1975 IEEE Trans. Electron Dev. ED-22 185
[20] Kang H S, Choi C S, Choi W Y, Kim D H, Seo K S 2004 Appl. Phys. Lett. 84 3780
[21] Saragi T P I, Pudzich R, Fuhrmann T, Salbeck J 2004 Appl. Phys. Lett. 84 2334
[22] Hamilton M C, Kanicki J 2004 IEEE J. Sel. Top. Quantum Electron. 10 840
[23] Blanchet G B, Fincher C R, Malajovich I 2003 J. Appl. Phys. 94 6181
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