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The contact effect on the performances of organic thin film transistors (OTFTs) is studied here. We fabricate Bottom-gated top-contact Pentacene-OTFTs on heavily doped n type Silicon wafers with using Al modified by MoO3 as source and drain electrodes. Field effect mobility μef of the OTFT reaches 0.42cm2/V ·s,the threshold voltage and the on/off current ratio arrive at -5.0 V and 4.7×103 respectively. The electric potential distribution in the channel is qualitively investigated by means of middle probe method (MPM) and the output curve is simulated by the charge drift method. Considering the contact effect,the μef is greatly improved to 1.1 cm2/V ·s,which indicates the importance of the contact engineering in OTFTs.
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Keywords:
- organic thin film transistor /
- field effect mobility /
- contact effect /
- charge drift
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[2] Facchetti A,Yoon M H,Marks T J 2005 Adv. Mater. 17 1750
[3] Bana D,Han S,Lu Z H,Oogarah T,Spring T A J,Liu H C 2007 Appl. Phys. Lett. 90 093108
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[23] Lee W H,Wang C C,Ho J C 2009 Thin Solid Film 517 5305
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[27] Pesavento P V,Chesterfield R J,Newman C R,Frisbie C D 2004 J. Appl. Phys. 96 7312
[28] Street R A,Salleo A 2002 Appl. Phys. Lett. 81 2887
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[1] Sundar V C,Zaumseil J,Podzorov V,Menard E,Willett R L,Someya T,Gershenson M E,Rogers J A 2004 Science 303 1644
[2] Facchetti A,Yoon M H,Marks T J 2005 Adv. Mater. 17 1750
[3] Bana D,Han S,Lu Z H,Oogarah T,Spring T A J,Liu H C 2007 Appl. Phys. Lett. 90 093108
[4] Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Huang J Z,Song D D,Zhu H N,Huang J Y,Xu X R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、姜薇薇、黄金昭、宋丹丹、朱海娜、黄金英、徐叙瑢 2008 57 5911]
[5] Yang S Y,Du W S,Qi J R,Lou Z D 2009 Acta Phys. Sin 58 3427 (in Chinese) [杨盛谊、杜文树、齐洁茹、娄志东 2009 58 3427]
[6] Reese C,Bao Z 2009 Adv. Funct. Mater. 19 763
[7] Liu Y R,Wang Z X,Yu J L,Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 58 8566]
[8] Cao J,Hong F,Xing F F,Gu W,Guo X A,Zhang H,Wei B,Zhang J H,Wang J 2010 Chin. Phys. B 19 037106
[9] Zou J H,Lan L F,Xu R X,Yang W,Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华、兰林锋、徐瑞霞、杨 伟、彭俊彪 2010 59 1275]
[10] Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Song D D,Zhu H N,Li S Y,Huang J Y,Huang H,Xu X R 2008 Chin. Phys. B 17 1887
[11] Yuan G C,Xu Z,Zhao S L,Zhang F J,Xu N,Sun Q J,Xu X R 2009 Acta Phys. Sin. 58 4941 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、许 娜、孙钦军、徐叙瑢 2009 58 4941]
[12] Torsi L,Marinelli F,Angione M D,Dell'Aquila A,Cioffi N, Giglio E D,Sabbatini L 2009 Org. Electron. 10 233
[13] Yuan G C,Xu Z,Gong C,Cai Q J,Lu Z S,Shi J S,Zhang F J,Zhao S L,Xu N,Li C M 2009 Appl. Phys. Lett. 94 153308
[14] Lee S,Koo B,Shin J,Lee E,Park H 2006 Appl. Phys. Lett. 88 162109
[15] Jurchescu O D,Baas J,Palstra T T M 2004 Appl. Phys. Lett. 84 3061
[16] Liu G,Liu M,Wang H,Shang L W,Ji Z Y,Liu X H,Liu J 2009 Chin. Phys. B 18 3530
[17] Li Y C,Lin Y J,Wei C Y,Lin Z X,Wen T C,Chang M Y,Tsai C L,Wang Y H 2009 Appl. Phys. Lett. 95 163303
[18] Petrovic A,Pavllica E,Bratina G,Carpentiero A,Tormen M W 2009 Synth. Met. 159 1210
[19] Bai Y,Liu X,Chen L,Khizar-ul-Haq,Khan M A,Zhu W Q,Jiang X Y,Zhang Z L 2007 Microelectr. J. 38 1185
[20] Chu C W,Li S H,Chen C W,Shrotriya V,Yang Y 2005 Appl. Phys. Lett. 87 193508
[21] Yuan G C,Xu Z,Zhao S L,Zhang F J,Xu N,Tian X Y,Xu X R 2009 Chin. Phys. B 18 3990
[22] Celle C,Suspene C,Simonato J,Lenfant S,Ternisien M,Vuillaume D 2009 Org. Electron. 10 119
[23] Lee W H,Wang C C,Ho J C 2009 Thin Solid Film 517 5305
[24] Kwon J H,Shin S,Kim K H,Cho M J,Kim K N,Choi D H,Ju B K 2009 Appl. Phys. Lett. 94 13506
[25] Yun Y,Pearson C,Petty M C 2009 J. Appl. Phys. 105 34508
[26] Lara Bullejos P L,Jimenez Tejada J A,Rodriguez-Bolivar,Deen M J,Marinov O 2009 J. Appl. Phys. 105 084516
[27] Pesavento P V,Chesterfield R J,Newman C R,Frisbie C D 2004 J. Appl. Phys. 96 7312
[28] Street R A,Salleo A 2002 Appl. Phys. Lett. 81 2887
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