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This article uses the Miller model to simulate the ferroelectric polarization of the metal-ferroelectrics-insulator-substrate (MFIS) structured ferroelectric field effect transistor (FeFET), interfacial charge concentration, and charge migration rate under ionizing radiation. The capacitance and source-drain current at different total dose and different dose rate are calculated. Results show that the total dose of 0.1 MGy changes slightly the source leakage current and capacitance of the FeFET, and the total dose of 1 MGy leads to a larger variation in these quantities. When the radiation dose rate is varied, the minimal changes in the drain-source current and capacitance are observed. These results suggest that FeFET has a relatively large radiation hardness.
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Keywords:
- total-dose /
- dose rate /
- capacitance /
- drain-source current
[1] Philpy S T, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky MT, America, March 18-25, 2000 p377
[2] Verbeck C, Gaucher P 1993 Radiation and its Effects on Components and Systems St. Malo, France, September 13-16, 1993 p166
[3] MacLeodT C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium Portland America, October 25-28, 2009 p24
[4] Zhang X Y, Guo Q, Lu W, Zhang X F, Zheng Q W, Cui J W, Li Y D, Zhou D 2013 Acta. Phys. Sin. 62 156107 (in Chinese) [张兴尧, 郭旗, 陆妩, 张孝富, 郑齐文, 崔江维, 李豫东, 周东 2013 62 156107]
[5] Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 IEEE T. Nucl. Sci. 37 1703
[6] Liu B, Ma Y, Zhou Y, Li J 2013 Radiat Eff. Defects Solids 168 115
[7] Usher T D 1998 APS March Meeting Abstracts Los Angeles, America, March 16-20, 1998 p1709
[8] Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin Phys. B 19 056103
[9] Soubra M, Cygler J, Mackay G 1994 Med. Phys. 21 567
[10] He B P, Zhang F Q, Yao Z B 2007 Chin. J. Comput. Phys. 1 109 (in Chinese) [何宝平, 张凤祁, 姚志斌 2007 计算物理 1 109]
[11] Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta. Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 61 107803]
[12] Li Z, Xiao Y G, Tang M H, Chen J W, Ding H, Yan S A, Zhou Y C 2014 Mater. Sci. Forum 787 247
[13] Miller S L, McWhorter P J 1992 J. Appl. Phys. 72 5999
[14] Guo Y, Chen J J, He Y B, Liang B, Liu B W 2013 Chin Phys. B 22 046103
[15] Yan S A, Tang M H, Zhao W, Guo H X, Zhang W L, Xu X Y, Wang X D, Ding H, Chen J W, Li Z, Zhou Y C 2014 Chin Phys. B 23 046103
[16] Chauhan R K, Chakrabarti P 2002 Microelectron. J. 33 197
[17] Inza M G, Lipovetzky J, Carbonetto S, Salomone L S, Redin E, Faigon A 2012 Technology and Applicationsin Micro-Nanoelectronics Cordoba, Argentina, August 9-10, 2012 p79
[18] Brews J R 1981 Appl. Solid State Science (New York: Academic Press) pp11-120
[19] Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE T. Electron Dev. 41 2357
[20] Miller S L, Nasby R D, Schwank J R, Rodgers M S, Dressendorfer P V 1990 J. Appl. Phys. 68 6463
[21] Shi Q, Ma Y, Li Y, Zhou Y 2011 Nucl. Instrum. Methods Phys. Res. Sect. B 269 452
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[1] Philpy S T, Kamp D A, DeVilbiss A D, Isacson A F, Derbenwick G F 2000 Aerospace Conference Proceedings Big Sky MT, America, March 18-25, 2000 p377
[2] Verbeck C, Gaucher P 1993 Radiation and its Effects on Components and Systems St. Malo, France, September 13-16, 1993 p166
[3] MacLeodT C, Sims W H, Varnavas K A, Sayyah R, Ho F D 2009 Non-Volatile Memory Technology Symposium Portland America, October 25-28, 2009 p24
[4] Zhang X Y, Guo Q, Lu W, Zhang X F, Zheng Q W, Cui J W, Li Y D, Zhou D 2013 Acta. Phys. Sin. 62 156107 (in Chinese) [张兴尧, 郭旗, 陆妩, 张孝富, 郑齐文, 崔江维, 李豫东, 周东 2013 62 156107]
[5] Schwank J R, Nasby R D, Miller S L, Rodgers M S, Dressendorfer P V 1990 IEEE T. Nucl. Sci. 37 1703
[6] Liu B, Ma Y, Zhou Y, Li J 2013 Radiat Eff. Defects Solids 168 115
[7] Usher T D 1998 APS March Meeting Abstracts Los Angeles, America, March 16-20, 1998 p1709
[8] Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin Phys. B 19 056103
[9] Soubra M, Cygler J, Mackay G 1994 Med. Phys. 21 567
[10] He B P, Zhang F Q, Yao Z B 2007 Chin. J. Comput. Phys. 1 109 (in Chinese) [何宝平, 张凤祁, 姚志斌 2007 计算物理 1 109]
[11] Sun P, Du L, Chen W H, He L, Zhang X F 2012 Acta. Phys. Sin. 61 107803 (in Chinese) [孙鹏, 杜磊, 陈文豪, 何亮, 张晓芳 2012 61 107803]
[12] Li Z, Xiao Y G, Tang M H, Chen J W, Ding H, Yan S A, Zhou Y C 2014 Mater. Sci. Forum 787 247
[13] Miller S L, McWhorter P J 1992 J. Appl. Phys. 72 5999
[14] Guo Y, Chen J J, He Y B, Liang B, Liu B W 2013 Chin Phys. B 22 046103
[15] Yan S A, Tang M H, Zhao W, Guo H X, Zhang W L, Xu X Y, Wang X D, Ding H, Chen J W, Li Z, Zhou Y C 2014 Chin Phys. B 23 046103
[16] Chauhan R K, Chakrabarti P 2002 Microelectron. J. 33 197
[17] Inza M G, Lipovetzky J, Carbonetto S, Salomone L S, Redin E, Faigon A 2012 Technology and Applicationsin Micro-Nanoelectronics Cordoba, Argentina, August 9-10, 2012 p79
[18] Brews J R 1981 Appl. Solid State Science (New York: Academic Press) pp11-120
[19] Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE T. Electron Dev. 41 2357
[20] Miller S L, Nasby R D, Schwank J R, Rodgers M S, Dressendorfer P V 1990 J. Appl. Phys. 68 6463
[21] Shi Q, Ma Y, Li Y, Zhou Y 2011 Nucl. Instrum. Methods Phys. Res. Sect. B 269 452
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