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Junction temperature, as one of the most important properties of light-emitting diodes (LEDs), has great impact on LEDs’ power efficiency, luminosity, reliability, life-time, and so on. Precise measurement of junction temperature for LED device is quite important in the research of chip’s fabrication, device packaging and related applications. In this paper, we propose a new approach to measure the junction temperature of LEDs by using temperature-dependent capacitance. The capacitance of white LEDs at room temperature is measured and found to be decreased first and then increased with an increasing reverse bias. Equivalent model using vertical and horizontal capacitances connected in parallel is proposed to qualitatively explain the variation of capacitance under different reverse bias. Result obtained from the model fitting agrees well with the experimental result. The capacitance-temperature (C-T) curve of white LEDs under different reverse bias is measured and analysed. Results show that the capacitance of LEDs is sensitive to temperature at all biases. Under a reverse voltage of 0.5 V, the capacitance has the maximal response of 1.971 pF/℃ and a good linear temperature-dependent property. The C-T curve is used as the calibration for the measurement of junction temperature. By monitoring the change of capacitance of the working LEDs and comparing it with the C-T curve, the junction temperature of the LED device is successfully measured. The junction temperature of a white LED obtained by the proposed C-T method is compared with that by tranditional forward voltage method, and they are in good agreement. The C-T method is also used to measure the real-time junction temperatures of white LEDs under a constant current of 350 mA and a constant voltage of 3.2 V, respectively. In both conditions, the junction temperature of an LED needs approximately 110 sec to rise from room temperature to a steady value, and subsequently needs approximately 500 sec to fall back to room temperature after the LED is turned off. Compared with traditional methods, C-T method only needs to measure one calibration and this calibration can be applied to LEDs working at any current and voltage. Therefore, C-T method is a simple and flexible alternative to the existing technique of temperature measurement in electronic device.
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Keywords:
- light-emitting diodes /
- capacitance-voltage /
- junction temperature
[1] Jiang R, Lu H, Chen D J, Ren F F, Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[2] Zhong C T, Yu T J, Yan J, Chen Z Z, Zhang G Y 2013 Chin. Phys. B 22 117804
[3] Xi Y, Schubert E F 2004 Appl. Phys. Lett. 85 2163
[4] Xi Y, Xi J Q, Gessmann T, Shah J M, Kim J K., Schubert E F 2005 Appl. Phys. Lett. 86 031907
[5] Ryu H, Ha K, Chae J, Nam O, Park Y 2005 Appl. Phys. Lett. 87 093506
[6] He S M, Luo X D, Zhang B, Fu L, Cheng L W, Wang J B, Lu W 2012 Chin. Phys. Lett. 29 127802
[7] Arik M, Weaver S 2004 4th Int. Conf. on Solid State Lighting Denver, USA, August 20, 2004 p214-23
[8] Senawiratne J, Li Y, Zhu M, Xia Y, Zhao W, Detchprohm T, Chatterjee A, Plawsky J L, Wetze C 2008 J. Electron. Mater. 37 607
[9] Chen H P, Chen H P, Cao J S, Guo S X 2013 Acta Phys. Sin. 62 104209 (in Chinese) [陈海鹏, 曹军胜, 郭树旭 2013 62 104209]
[10] Chen N C, Wang Y N, Tseng C Y, Yang Y K 2006 Appl. Phys. Lett. 89 101114
[11] Lin Y, Gao Y L, Lu Y J, Zhu L H, Zhang Y, Chen Z 2012 Appl. Phys. Lett. 100 202108
[12] Zhao Y, Zhong W, Liu J, Huang Z, Wei A 2014 Semicond. Sci. Technol. 29 035008
[13] Zhong W, Wei A, Zhao Y 2013 Chinese Journal of Luminescence 34 1203 (in Chinese) [钟文姣, 魏爱香, 招瑜 2013 发光学报 34 1203]
[14] Chhajed S, Xi Y, Gessmann T, Xi J Q, Shah J M, Kim J K, Schubert E F 2005 Proc. SPIE 5739, Light-Emitting Diodes:Research, Manufacturing and Applications IX San Jose, USA, January 25-27, 2005 p16
[15] Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992 (in Chinese) [郜锦侠, 张义门, 汤晓燕, 张玉明 2006 55 2992]
[16] Arias J, Esquivias I, Ralston J D, Larkins E C, Weisser S, Rosenzweig J, Schönfelder A, Maier M 1996 Appl. Phys. Lett. 68 1138
[17] Soltanovich O, Yakimov E 2013 Phys. Status Solidi C 10 338
[18] Feng L F, Li Y, Li D, Wang C D, Zhang G Y, Yao D S, Liu W F, Xing P F 2011 Chin. Phys. Lett. 28 107801
[19] Soltanovich O A, Shmidt N M, Yakimov E B 2011 Semiconductors 45 221
[20] Pierret R F 1996 Semiconductor Device Fundamentals (1st International edition) (London:Pearson Educacion) p305
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[1] Jiang R, Lu H, Chen D J, Ren F F, Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[2] Zhong C T, Yu T J, Yan J, Chen Z Z, Zhang G Y 2013 Chin. Phys. B 22 117804
[3] Xi Y, Schubert E F 2004 Appl. Phys. Lett. 85 2163
[4] Xi Y, Xi J Q, Gessmann T, Shah J M, Kim J K., Schubert E F 2005 Appl. Phys. Lett. 86 031907
[5] Ryu H, Ha K, Chae J, Nam O, Park Y 2005 Appl. Phys. Lett. 87 093506
[6] He S M, Luo X D, Zhang B, Fu L, Cheng L W, Wang J B, Lu W 2012 Chin. Phys. Lett. 29 127802
[7] Arik M, Weaver S 2004 4th Int. Conf. on Solid State Lighting Denver, USA, August 20, 2004 p214-23
[8] Senawiratne J, Li Y, Zhu M, Xia Y, Zhao W, Detchprohm T, Chatterjee A, Plawsky J L, Wetze C 2008 J. Electron. Mater. 37 607
[9] Chen H P, Chen H P, Cao J S, Guo S X 2013 Acta Phys. Sin. 62 104209 (in Chinese) [陈海鹏, 曹军胜, 郭树旭 2013 62 104209]
[10] Chen N C, Wang Y N, Tseng C Y, Yang Y K 2006 Appl. Phys. Lett. 89 101114
[11] Lin Y, Gao Y L, Lu Y J, Zhu L H, Zhang Y, Chen Z 2012 Appl. Phys. Lett. 100 202108
[12] Zhao Y, Zhong W, Liu J, Huang Z, Wei A 2014 Semicond. Sci. Technol. 29 035008
[13] Zhong W, Wei A, Zhao Y 2013 Chinese Journal of Luminescence 34 1203 (in Chinese) [钟文姣, 魏爱香, 招瑜 2013 发光学报 34 1203]
[14] Chhajed S, Xi Y, Gessmann T, Xi J Q, Shah J M, Kim J K, Schubert E F 2005 Proc. SPIE 5739, Light-Emitting Diodes:Research, Manufacturing and Applications IX San Jose, USA, January 25-27, 2005 p16
[15] Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992 (in Chinese) [郜锦侠, 张义门, 汤晓燕, 张玉明 2006 55 2992]
[16] Arias J, Esquivias I, Ralston J D, Larkins E C, Weisser S, Rosenzweig J, Schönfelder A, Maier M 1996 Appl. Phys. Lett. 68 1138
[17] Soltanovich O, Yakimov E 2013 Phys. Status Solidi C 10 338
[18] Feng L F, Li Y, Li D, Wang C D, Zhang G Y, Yao D S, Liu W F, Xing P F 2011 Chin. Phys. Lett. 28 107801
[19] Soltanovich O A, Shmidt N M, Yakimov E B 2011 Semiconductors 45 221
[20] Pierret R F 1996 Semiconductor Device Fundamentals (1st International edition) (London:Pearson Educacion) p305
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