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The circuits of memristor with border constraint, connected with capacitance and inductance in series, and with capacitance and inductance in parallel are studied separately. The properties of the circuits and the influences of frequency and element parameters on circuit are analyzed. Theories are proved by simulation. Potential applications are predicted based on the properties of memristor with border constraint and its related circuits.
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Keywords:
- memristor /
- capacitance /
- inductance /
- properties of circuit
[1] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[2] Chua L O 1971 IEEE Trans. Circuit Theory 18 507
[3] Chua L O, Kang S M 1976 Proc. IEEE 64 209
[4] Dmitri B S, Gregory S S, Duncan R S, Stanley W 2008 Nature 453 45
[5] James M, He T 2008 Nature 453 42
[6] Wey T A, Benderli S 2009 IEEE Electron Device Lett. 45 1103
[7] Chen G 2008 IEEE Trans. Circuits Syst. 8 55
[8] Di V M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[9] Wang X B, Chen Y R, Xi H W, Li H, Dimitrov D 2009 IEEE Electron Device Lett. 30 294
[10] Chen X M, Wu G H, Bao D H 2008 Appl. Phys. Lett. 93 093501
[11] Witrisal K 2009 IEEE Electron Device Lett. 45 1103
[12] Zhang X, Zhou Y Z, Bi Q, Yang X H, Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese) [张旭, 周玉泽, 闭强, 杨兴华, 俎云霄 2010 59 6673]
[13] Zhang X F, Chen Z Y, Bi Q S 2010 Acta Phys. Sin. 59 3057 (in Chinese) [张晓芳, 陈章耀, 毕勤胜 2010 59 3057]
[14] Xu Z, Liu C X, Yang T 2010 Acta Phys. Sin. 59 131 (in Chinese) [许喆, 刘崇新, 杨韬 2010 59 131]
[15] Bao B C, Liu Z, Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese) [包伯成, 刘中, 许建平 2010 59 3785]
[16] Zhang J Z, Wang A B, Wang Y C 2009 Acta Phys. Sin. 58 3793 (in Chinese) [张建忠, 王安帮, 王云才 2009 58 3793]
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[1] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[2] Chua L O 1971 IEEE Trans. Circuit Theory 18 507
[3] Chua L O, Kang S M 1976 Proc. IEEE 64 209
[4] Dmitri B S, Gregory S S, Duncan R S, Stanley W 2008 Nature 453 45
[5] James M, He T 2008 Nature 453 42
[6] Wey T A, Benderli S 2009 IEEE Electron Device Lett. 45 1103
[7] Chen G 2008 IEEE Trans. Circuits Syst. 8 55
[8] Di V M, Pershin Y V, Chua L O 2009 Proc. IEEE 97 1717
[9] Wang X B, Chen Y R, Xi H W, Li H, Dimitrov D 2009 IEEE Electron Device Lett. 30 294
[10] Chen X M, Wu G H, Bao D H 2008 Appl. Phys. Lett. 93 093501
[11] Witrisal K 2009 IEEE Electron Device Lett. 45 1103
[12] Zhang X, Zhou Y Z, Bi Q, Yang X H, Zu Y X 2010 Acta Phys. Sin. 59 6673 (in Chinese) [张旭, 周玉泽, 闭强, 杨兴华, 俎云霄 2010 59 6673]
[13] Zhang X F, Chen Z Y, Bi Q S 2010 Acta Phys. Sin. 59 3057 (in Chinese) [张晓芳, 陈章耀, 毕勤胜 2010 59 3057]
[14] Xu Z, Liu C X, Yang T 2010 Acta Phys. Sin. 59 131 (in Chinese) [许喆, 刘崇新, 杨韬 2010 59 131]
[15] Bao B C, Liu Z, Xu J P 2010 Acta Phys. Sin. 59 3785 (in Chinese) [包伯成, 刘中, 许建平 2010 59 3785]
[16] Zhang J Z, Wang A B, Wang Y C 2009 Acta Phys. Sin. 58 3793 (in Chinese) [张建忠, 王安帮, 王云才 2009 58 3793]
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