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Zhao Qi-Feng, Zhuang Yi-Qi, Bao Jun-Lin, Hu Wei. Quantitative separation of radiation induced charges for NPN bipolar junction transistors based on 1/f noise model. Acta Physica Sinica,
2015, 64(13): 136104.
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Zhang Xue-Jun, Rao Jian, Deng Yang-Bao, Jiang Lian-jun, Tian Ye. Fluctuation effects of thermodynamic variables in particle-spilling-from-well model with single potential well. Acta Physica Sinica,
2014, 63(19): 193601.
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Chen Hai-Peng, Cao Jun-Sheng, Guo Shu-Xu. Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser. Acta Physica Sinica,
2013, 62(10): 104209.
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Han Ming-Jun, Ke Dao-Ming, Chi Xiao-Li, Wang Min, Wang Bao-Tong. A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET. Acta Physica Sinica,
2013, 62(9): 098502.
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Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan. Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFET. Acta Physica Sinica,
2013, 62(15): 157201.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang. A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica,
2012, 61(10): 107803.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
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Dai Yu, Zhang Jian-Xun. Reduction of 1/f noise in semiconductor devices based on wavelet transform and Wiener filter. Acta Physica Sinica,
2011, 60(11): 110516.
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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica,
2011, 60(11): 116103.
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Zhang Zhen-Guo, Gao Feng-Li, Guo Shu-Xu, Li Xue-Yan, Yu Si-Yao. A novel method to estimate the parameters of 1/f noise of semiconductor laser diodes. Acta Physica Sinica,
2009, 58(4): 2772-2775.
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Li Wei-Hua, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin. Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor. Acta Physica Sinica,
2009, 58(10): 7183-7188.
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Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang. The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica,
2008, 57(9): 5869-5874.
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Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua. Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica,
2008, 57(8): 5205-5211.
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Li Rui-Min, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin. A 1/f noise based research of radiation induced interface trap buildup process. Acta Physica Sinica,
2007, 56(6): 3400-3406.
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Gao Xu-Tuan, Fu Xue, Song Jun, Liu De-Sheng, Xie Shi-Jie. Effect of lattice site position fluctuation on the electronic structure of DNA. Acta Physica Sinica,
2006, 55(2): 952-956.
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Hou Ji-Xuan, Wang Xin, Huang Shan, Lin Jian-Jun, Wan Cheng-Lan, Liu Quan-Hui. On the divergence problem of temperature fluctuations in simple systems. Acta Physica Sinica,
2006, 55(4): 1616-1621.
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Chen Wei-Bing, Xu Jing-Ping, Zou Xiao, Li Yan-Ping, Xu Sheng-Guo, Hu Zhi-Fu. Analytic tunneling-current model of small-scale MOSFETs. Acta Physica Sinica,
2006, 55(10): 5036-5040.
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Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin. Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica,
2005, 54(7): 3357-3362.
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Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2003, 52(10): 2553-2557.
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2002, 51(5): 1113-1117.
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