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Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise

Peng Shao-Quan Du Lei Zhuang Yi-Qi Bao Jun-Lin He Liang Chen Wei-Hua

Citation:

Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise

Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua
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  • Abstract views:  8629
  • PDF Downloads:  1000
  • Cited By: 0
Publishing process
  • Received Date:  28 September 2007
  • Accepted Date:  10 April 2008
  • Published Online:  05 April 2008

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