Temperature-dependent relation between junction temperature and 1/f noise in high power semiconductor laser

Chen Hai-Peng; Cao Jun-Sheng; Guo Shu-Xu

doi:10.7498/aps.62.104209

Abstract

The junction temperature rise may not only affect its output power, slope efficiency, threshold current and lifetime, but also will cause the spectral broadening and wavelength shift in a high power semiconductor laser. Therefore, thermal management becomes one of the main problems in research and development of pump laser. In this paper the physical model of the noise power spectrum and junction temperature variation is first established; according to the compression sensing theory, and after sparsing the measured aliasing composite noise signal containing Gaussian white noise and 1/f noise, the basic pursuit denoising algorithm is used to do denoising; through changing the iterations times of the used algorithm and the size of measurement matrix, the curves of the ration between noise voltage power spectrum and junction temperature variation are obtained, thereby avoiding the complexity of direct measurement of the junction temperature. The numerical estimation results can better guid us in doing the thermal management work in high power semiconductor lasers.

Keywords:

Authors and contacts

1.
State Key Laboratory of Integrate Optoelectronics, Jilin University, Changchun 130012, China;
2.
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
Funds: Project supported by the National Natural Science Foundation of China (Grant No. 60976065), National Key Scientific Instrument and Equipment Development Project, China (Grant No. 2011YQ040077), National Natural Science Youth Foundation of China (Grant No. 61006054) and Natural Science Foundation of Jilin Province, China (Grant No. 201115125).

References

[1]	Hu J, Du L, Zhuang Y Q 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪 2006 55 1384]
[2]	Sun P, Du L, Chen W H 2012 Acta Phys. Sin. 61 067801 (in Chinese) [孙鹏, 杜磊, 陈文豪 2012 61 067801]
[3]	Yu S Y, Guo S X, Gao F L 2009 Acta Phys. Sin. 58 5214 (in Chinese) [于思瑶, 郭树旭, 郜峰利 2009 58 5214]
[4]	Wornell G W 1993 Proc. IEEE 81 1428
[5]	Li Y, Guo S X 2012 Acta Phys. Sin. 61 034208 (in Chinese) [李扬, 郭树旭 2012 61 034208]
[6]	Yong K S, Brandan F 2007 Proc. SPIE 6456 645605-1
[7]	Hooge F N, Hoppenbrouwers A M H 1969 Physica 45 386
[8]	Donoho D 2006 IEEE Trans. Inform. Theory 52 1289
[9]	Chaitanya E, Daniel T, Eero P S 2011 IEEE Trans. Signal Processing 59 4735
[10]	Chen S, Donoho D, Sauners M 1998 SIAM J. Sci. Comput. 20 33

Cited By

[1]	Hu J, Du L, Zhuang Y Q 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾, 杜磊, 庄奕琪 2006 55 1384]
[2]	Sun P, Du L, Chen W H 2012 Acta Phys. Sin. 61 067801 (in Chinese) [孙鹏, 杜磊, 陈文豪 2012 61 067801]
[3]	Yu S Y, Guo S X, Gao F L 2009 Acta Phys. Sin. 58 5214 (in Chinese) [于思瑶, 郭树旭, 郜峰利 2009 58 5214]
[4]	Wornell G W 1993 Proc. IEEE 81 1428
[5]	Li Y, Guo S X 2012 Acta Phys. Sin. 61 034208 (in Chinese) [李扬, 郭树旭 2012 61 034208]
[6]	Yong K S, Brandan F 2007 Proc. SPIE 6456 645605-1
[7]	Hooge F N, Hoppenbrouwers A M H 1969 Physica 45 386
[8]	Donoho D 2006 IEEE Trans. Inform. Theory 52 1289
[9]	Chaitanya E, Daniel T, Eero P S 2011 IEEE Trans. Signal Processing 59 4735
[10]	Chen S, Donoho D, Sauners M 1998 SIAM J. Sci. Comput. 20 33

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Catalog

Vol. 62, Issue 10 - 2013-05-20

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