光电耦合器电离辐射损伤电流传输比1/f噪声表征

林丽艳; 杜磊; 包军林; 何亮

doi:10.7498/aps.60.047202

摘要

在研究光电耦合器电离辐射损伤机理基础上,分别建立光电耦合器电离辐射损伤电流传输比(CTR)表征模型和1/f噪声表征模型.结果表明CTR退化和噪声增加都归因于辐射后光敏三极管集电结和发射结处SiO2/Si界面缺陷增多.根据CTR退化和噪声变化分别与辐射剂量的关系,建立起噪声变化与CTR退化之间的关系,辐照实验对表征模型正确性进行了验证.运用噪声变化与辐射剂量的关系,通过低剂量辐照实验可以预测高剂量辐射后光电耦合器退化程度,故可用于评价光电耦合器抗辐射能力.

关键词:

1/f噪声 /
光电耦合器 /
缺陷 /
模型

Abstract

Based on the mechanism of ionization radiation damage in optoelectronic coupled devices (OCDs), the characteristic models of current transmitting rate (CTR) and 1/f noise are established. The results show that CTR degradation and noise increase are due to the increase of SiO2/Si interface defects at the collector junction and emit junction in phototransistor. The relationship between CTR degradation and noise change is established by the radiation dose. The correctnesses of characteristic models are validated in experiment. By the relationship between noise change and radiation dose, the high-dose radiation degradation can be predicted through the low-dose irradiation experiment. So noise can be used to evaluate the radiation tolerance of OCDs.

Keywords:

1/f noise /
OCDs /
defect /
model

作者及机构信息

(1)西安电子科技大学技术物理学院,西安 710071; (2)西安电子科技大学微电子学院,西安 710071

Authors and contacts

(1)Microelectronic Institute, Xi dian University, Xian 710071, China; (2)School of Technology Physics, Xi dian Universit y, Xian 710071, China

参考文献

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[2]	Chen P X 2005 Radiation Effects on Semiconductor Devices and Integrated Circuits(National Defense Industry Press) (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应(国防工业出版社)]
[3]	Johnston A H, Tetsuo F 2005 IEEE Trans. Nucl. Sci. 52 2649
[4]	Hu J, Du L, Zhuang Y Q 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾、杜磊、庄奕琪等 2006 55 1384]
[5]	Mangeret R, Bonora L, Bouchet T 2001 Radiation and Its Effects on Components and Systems 6 166
[6]	Liu Y A, Du L,Bao J L 2008 Acta Phys. Sin. 57 2468 (in Chinese) [刘宇安、杜磊、包军林等 2008 57 2468]
[7]	Peng S Q, Du L, Zhuang Y Q 2008 Acta Phys. Sin. 57 5201 (in Chinese) [彭绍泉、杜磊、庄奕琪等 2008 57 5201]
[8]	Yang L X, Du L, Bao J L 2008 Acta Phys. Sin. 57 5869 (in Chinese) [杨丽侠、杜磊、包军林等 2008 57 5869]
[9]	Dai Y S, Xu J S 2000 Solid-State Electronics 44 1495
[10]	Johnston A H, Rax B G 2000 IEEE Trans. Nucl. Sci. 47 675
[11]	Miyahira T F, Johnston A H 2002 IEEE Trans. Nucl. Sci. 49 2868
[12]	Jerry L, Gorelick, Raymond L 2004 IEEE Trans. Nucl. Sci. 51 3730
[13]	Konczakowska, Cichosz J, Szewczyk A 2007 Opto-Electron. Re 15 149
[14]	Milan M Jevtic 2004 Miroelectron. Reliab 44 1123
[15]	Reed R A, Christian P, Paul W M 1996 IEEE Trans. Nucl. Sci. 48 2202
[16]	Bao J L, Zhuang Y Q, Du L 2005 Acta Photonica Sinica 34 1359 (in Chinese) [包军林、庄奕琪、杜磊 2005 光子学报 34 1359]
[17]	Zhuang Y Q, Sun Q 1993 Noise and its Minimizing Technology in Semiconductor Devices(National Defense Industry Press) (in Chinese) [庄奕琪、孙青 1993 半导体器件中的噪声及其低噪声化技术(国防工业出版社)]
[18]	Bajenesco M Sc 1994 Proceedings of Electrotechnical Conference 2 571
[19]	Rax B G, Lee C I, Johnston A H 1996 IEEE Trans. Nucl. Sci. 47 3167
[20]	Johnston A H, Rax B G, Selva L E 1999 IEEE Trans. Nucl. Sci. 46 1781
[21]	Lischka H 1994 RADECS93 Proceeding 226
[22]	Reed R A, Marshall P W, Johnston A H 1998 IEEE Trans. Nucl. Sci. 45 2833
[23]	Zhuang Y Q, Sun Q,Yang Y T 1989 Research & Progress of Solid State Electronics 9 202 (in Chinese) [庄奕琪、孙青、杨银堂 1989 固体电子学研究与进展 9 202]
[24]	Hu J, Du L, Zhuang Y Q 2007 Chinese Journal of Semicon-ductors 28 597 (in Chinese) [胡谨、杜磊、庄奕琪 2007 半导体学报 28 597]
[25]	Chen W H, Du L, Zhuang Y Q 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华、杜磊、庄奕琪等 2009 58 4090]

施引文献

[1]	LaBel K A, Kniffin S D, Reed R A 2000 IEEE Rad. Eff. 123
[2]	Chen P X 2005 Radiation Effects on Semiconductor Devices and Integrated Circuits(National Defense Industry Press) (in Chinese) [陈盘训 2005 半导体器件和集成电路的辐射效应(国防工业出版社)]
[3]	Johnston A H, Tetsuo F 2005 IEEE Trans. Nucl. Sci. 52 2649
[4]	Hu J, Du L, Zhuang Y Q 2006 Acta Phys. Sin. 55 1384 (in Chinese) [胡瑾、杜磊、庄奕琪等 2006 55 1384]
[5]	Mangeret R, Bonora L, Bouchet T 2001 Radiation and Its Effects on Components and Systems 6 166
[6]	Liu Y A, Du L,Bao J L 2008 Acta Phys. Sin. 57 2468 (in Chinese) [刘宇安、杜磊、包军林等 2008 57 2468]
[7]	Peng S Q, Du L, Zhuang Y Q 2008 Acta Phys. Sin. 57 5201 (in Chinese) [彭绍泉、杜磊、庄奕琪等 2008 57 5201]
[8]	Yang L X, Du L, Bao J L 2008 Acta Phys. Sin. 57 5869 (in Chinese) [杨丽侠、杜磊、包军林等 2008 57 5869]
[9]	Dai Y S, Xu J S 2000 Solid-State Electronics 44 1495
[10]	Johnston A H, Rax B G 2000 IEEE Trans. Nucl. Sci. 47 675
[11]	Miyahira T F, Johnston A H 2002 IEEE Trans. Nucl. Sci. 49 2868
[12]	Jerry L, Gorelick, Raymond L 2004 IEEE Trans. Nucl. Sci. 51 3730
[13]	Konczakowska, Cichosz J, Szewczyk A 2007 Opto-Electron. Re 15 149
[14]	Milan M Jevtic 2004 Miroelectron. Reliab 44 1123
[15]	Reed R A, Christian P, Paul W M 1996 IEEE Trans. Nucl. Sci. 48 2202
[16]	Bao J L, Zhuang Y Q, Du L 2005 Acta Photonica Sinica 34 1359 (in Chinese) [包军林、庄奕琪、杜磊 2005 光子学报 34 1359]
[17]	Zhuang Y Q, Sun Q 1993 Noise and its Minimizing Technology in Semiconductor Devices(National Defense Industry Press) (in Chinese) [庄奕琪、孙青 1993 半导体器件中的噪声及其低噪声化技术(国防工业出版社)]
[18]	Bajenesco M Sc 1994 Proceedings of Electrotechnical Conference 2 571
[19]	Rax B G, Lee C I, Johnston A H 1996 IEEE Trans. Nucl. Sci. 47 3167
[20]	Johnston A H, Rax B G, Selva L E 1999 IEEE Trans. Nucl. Sci. 46 1781
[21]	Lischka H 1994 RADECS93 Proceeding 226
[22]	Reed R A, Marshall P W, Johnston A H 1998 IEEE Trans. Nucl. Sci. 45 2833
[23]	Zhuang Y Q, Sun Q,Yang Y T 1989 Research & Progress of Solid State Electronics 9 202 (in Chinese) [庄奕琪、孙青、杨银堂 1989 固体电子学研究与进展 9 202]
[24]	Hu J, Du L, Zhuang Y Q 2007 Chinese Journal of Semicon-ductors 28 597 (in Chinese) [胡谨、杜磊、庄奕琪 2007 半导体学报 28 597]
[25]	Chen W H, Du L, Zhuang Y Q 2009 Acta Phys. Sin. 58 4090 (in Chinese) [陈伟华、杜磊、庄奕琪等 2009 58 4090]

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