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2015, 64(12): 124104.
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise. Acta Physica Sinica,
2012, 61(6): 067801.
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2012, 61(10): 107803.
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2012, 61(17): 176107.
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2011, 60(4): 045208.
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2010, 59(12): 8707-8716.
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2009, 58(6): 4090-4095.
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2007, 56(1): 338-345.
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Wang Wei, Zhang Jie, Zhao Gang. Simulation of the effects of X-ray emission from accretion disks on the interstellar materials. Acta Physica Sinica,
2006, 55(1): 287-293.
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Li Zhong-He, Liu Hong-Xia, Hao Yue. Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica,
2006, 55(2): 820-824.
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2004, 53(11): 3888-3894.
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2003, 52(2): 415-420.
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2003, 52(7): 1650-1655.
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2001, 50(6): 1128-1131.
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