| [1] |
Zhen Jiapeng, Guo Silin, Gong Renfeng, Zhang Danping, Xiang Ziqiang, Lv Kehong, Qiu Jing, Liu Guanjun. Analytical model of diamondene-based transistor channel and current hypersensitivity characteristics. Acta Physica Sinica,
2025, 74(7): .
doi: 10.7498/aps.74.20250009
|
| [2] |
Yu Xue-Ling, Chen Feng-Xiang, Xiang Tao, Deng Wen, Liu Jia-Ning, Wang Li-Sheng. Research on the photoelectric modulation and resistive switching characteristic of ReSe2/WSe2 memtransistor. Acta Physica Sinica,
2022, 0(0): .
doi: 10.7498/aps.7120221154
|
| [3] |
Gu Zhao-Qiao, Guo Hong-Xia, Pan Xiao-Yu, Lei Zhi-Feng, Zhang Feng-Qi, Zhang Hong, Ju An-An, Liu Yi-Tian. Total dose effect and annealing characteristics of silicon carbide field effect transistor devices under different stresses. Acta Physica Sinica,
2021, 70(16): 166101.
doi: 10.7498/aps.70.20210515
|
| [4] |
Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica,
2016, 65(16): 168501.
doi: 10.7498/aps.65.168501
|
| [5] |
Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue. Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica,
2016, 65(3): 038501.
doi: 10.7498/aps.65.038501
|
| [6] |
Tan Ji, Zhu Yang-Jun, Lu Shuo-Jin, Tian Xiao-Li, Teng Yuan, Yang Fei, Zhang Guang-Yin, Shen Qian-Xing. Modeling and simulation of the insulated gate bipolar transistor turn-off voltage slope under inductive load. Acta Physica Sinica,
2016, 65(15): 158501.
doi: 10.7498/aps.65.158501
|
| [7] |
Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min. Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stress. Acta Physica Sinica,
2015, 64(12): 127303.
doi: 10.7498/aps.64.127303
|
| [8] |
Liu Jing, Guo Fei, Gao Yong. Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica,
2014, 63(4): 048501.
doi: 10.7498/aps.63.048501
|
| [9] |
Wang Yuan, Zhang Li-Zhong, Cao Jian, Lu Guang-Yi, Jia Song, Zhang Xing. Research on electrostatic discharge characteristics of tunnel field effect transistors. Acta Physica Sinica,
2014, 63(17): 178501.
doi: 10.7498/aps.63.178501
|
| [10] |
Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong. Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica,
2013, 62(19): 196104.
doi: 10.7498/aps.62.196104
|
| [11] |
Ren Xing-Rong, Chai Chang-Chun, Ma Zhen-Yang, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei. The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base. Acta Physica Sinica,
2013, 62(6): 068501.
doi: 10.7498/aps.62.068501
|
| [12] |
Chen Xiao-Xue, Yao Ruo-He. DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica,
2012, 61(23): 237104.
doi: 10.7498/aps.61.237104
|
| [13] |
Hong Wu, Liang Lin, Yu Yue-Hui. Two-step switching method improved turn-on characteristic in reversely switching dynistor. Acta Physica Sinica,
2012, 61(5): 058501.
doi: 10.7498/aps.61.058501
|
| [14] |
You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei. Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica,
2012, 61(10): 108501.
doi: 10.7498/aps.61.108501
|
| [15] |
Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen. Study of zinc tin oxide thin-film transistor. Acta Physica Sinica,
2011, 60(3): 037305.
doi: 10.7498/aps.60.037305
|
| [16] |
Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang. The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse. Acta Physica Sinica,
2010, 59(11): 8118-8124.
doi: 10.7498/aps.59.8118
|
| [17] |
Yang Sheng-Yi, Du Wen-Shu, Qi Jie-Ru, Lou Zhi-Dong. Optoelectronic characteristics of NPB-based vertical organic light-emitting transistors. Acta Physica Sinica,
2009, 58(5): 3427-3432.
doi: 10.7498/aps.58.3427
|
| [18] |
Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Xu Na, Sun Qin-Jun, Xu Xu-Rong. Study of the characteristics of organic thin film transistors with phenyltrimethoxysilane buffer under low gate modulation voltage. Acta Physica Sinica,
2009, 58(7): 4941-4947.
doi: 10.7498/aps.58.4941
|
| [19] |
Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min. Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica,
2007, 56(7): 4117-4121.
doi: 10.7498/aps.56.4117
|
| [20] |
Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying. Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica,
2007, 56(2): 1105-1109.
doi: 10.7498/aps.56.1105
|
下载:
