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The new generation of detection equipment urgently requires high-sensitivity detectors. Traditional silicon-based detectors cannot meet the requirements for sensitivity and channel size. Diamondene has excellent performance such as high carrier mobility and wide band gap. Its excellent electronic characteristics are expected to effectively improve the sensitivity of the detector and provide a new way for developing the next generation of detectors. However, the detection mechanism based on diamondene is still unclear. Based on the above problems, the analytical model and mechanism of the transistor channel are first studied. By analyzing the relationship between the surface potential distribution of the current channel and the effective channel size in the working state and the sensitive characteristics of the two-dimensional material electrons of the channel, a theoretical model of the transistor detector is constructed based on the electronic characteristics of the channel material, and the working characteristics of the detector are investigated. The finite element simulation of the working mechanism, potential and electron distribution of the transistor detector is carried out. The simulation results show that the mobility level of the diamondene-based detector is 2.5 times that of the traditional silicon-based detector, which theoretically verifies the hypersensitive detection characteristics of the diamondene-based detector. This study is of great significance in designing and applying a new generation of carbon-based ultra-sensitive detection devices.
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Keywords:
- high-sensitivity detector /
- channel electronics /
- sensitivity /
- migration rate
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图 1 晶体管工作电子流动原理图
Figure 1. Schematic diagram of the electron flow principle of the transistor.
图 2 折射率实部(a)和虚部(b)随费米能量的变化关系
Figure 2. Relationship between the real part (a) and the imaginary part (b) of the refractive index with Fermi energy.
图 3 晶体管内截面电势分布随栅压的变化情况
Figure 3. Distribution of the cross-section potential distribution in the transistor with the gate voltage.
图 4 晶体管内截面电势分布随漏压的变化情况
Figure 4. Distribution of the cross-section potential distribution in the transistor with the drain voltage.
图 5 电子(a)和空穴(b)随栅压的分布关系
Figure 5. Distribution of electrons (a) and holes (b) with gate voltage.
图 6 电子(a)和空穴(b)随漏压的分布关系
Figure 6. Distribution of electrons (a) and holes (b) with drain voltage.
图 7 硅基和金刚石烯基检测器的电势、电子和空穴分布对比
Figure 7. Comparison of electric potential, electron, and hole distributions of silicon-based and diamondene-based transistors.
图 8 硅基(a)和金刚石烯基(b)检测器的检测电流性能对比
Figure 8. Comparison of the current performance of silicon-based (a) and diamondene-based (b) transistors.
图 9 硅基与金刚石烯基$ \log {I_1}{\text{ - }}{V_{\text{g}}} $图
Figure 9. The $ \log {I_1}{\text{ - }}{V_{\text{g}}} $ of silicon-based and diamondene-based transistors.
表 1 金刚石烯与硅沟道材料仿真参数
Table 1. . Simulation parameters of diamondene and silicon channel materials.
材料 金刚石烯 硅 带隙/eV 2.7 1.12 电子迁移率/m–3 4500 1450 空穴迁移率/m–3 1000 500 电子亲和能/eV 3.64 4.05 
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