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建立了双极晶体管(BJT)在强电磁脉冲作用下的二维电热模型, 对处于有源放大区的BJT在基极注入强电磁脉冲时的瞬态响应进行了仿真. 结果表明, BJT烧毁点位置随注入脉冲幅度变化而变化, 低脉冲幅度下晶体管烧毁是由发射结反向雪崩击穿所致, 烧毁点位于发射结柱面区; 而在高脉冲幅度下, 由基区-外延层-衬底组成的p-n-n+ 二极管发生二次击穿导致靠近发射极一侧的基极边缘率先烧毁; BJT的烧毁时间随脉冲幅度升高而减小, 而损伤能量则随之呈现减小-增大-减小的变化趋势, 因而存在一个极小值和一个极大值. 仿真与实验结果的比较表明, 本文建立的晶体管模型不但能预测强电磁脉冲作用下BJT内部烧毁发生的位置, 而且能够得到损伤能量.A two-dimensional electrothermal model of the bipolar transistor (BJT) is established, and the transient behaviors of the BJT originally in the forward-active region are simulated with the injection of electromagnetic pulse from the base. The results show that the damage location of the BJT shifts with the amplitude of the pulse. With a low pulse amplitude, the burnout of the BJT is caused by the avalanche breakdown of the emitter-base junction, and the damage location lies in the cylindrical region of this junction. With a high pulse amplitude, the damage first occurs at the edge of the base closer to the emitter due to the second breakdown of the p-n-n+ structure composed of the base, the epitaxial layer and the substrate. The burnout time increases with pulse amplitude increasing, while the damage energy changes in a decrease-increase-decrease order with it, thus generating both a minimum value and a maximum value of the damage energy. A comparison between simulation results and experimental ones shows that the transistor model presented in the paper can not only predict the damage location in the BJT under intense electromagnetic pulses, but also obtain the damage energy.
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Keywords:
- bipolar transistor /
- intense electromagnetic pulse /
- damage location /
- damage energy
[1] Chai C C, Xi X W, Ren X R, Yang Y T, Ma Z Y 2010 Acta Phys. Sin. 59 8118 (in Chinese) [柴常春, 席晓文, 任兴荣, 杨银堂, 马振洋 2010 59 8118]
[2] Xi X W, Chai C C, Ren X R, Yang Y T, Ma Z Y, Wang J 2010 J. Semicond. 31 49
[3] Xi X W, Chai C C, Ren X R, Yang Y T, Zhang B, Hong X 2010 J. Semicond. 31 32
[4] Ren X R, Chai C C, Ma Z Y, Yang Y T, Wang J, Ren L H 2010 Proceedings of the 11th International Conference on Electronic Packaging Technology & High Density Packaging Xi'an, China, August 16-19, p1210
[5] Xi X W, Chai C C, Ren X R, Yang Y T, Zhang B 2009 Proceedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Suzhou, China, July 6-10, p443
[6] Zhou H A, Du Z W, Gong K 2005 High Power Laser Part. Beams 17 1861 (in Chinese) [周怀安, 杜正伟, 龚克 2005 强激光与粒子束 17 1861]
[7] Arnborg T 1990 IEEE Trans. Electron Devices. 37 2099
[8] Kyuwoon H, Navon D H, Tang T W, Hower P L 1986 IEEE Trans. Electron Dev. 33 1067
[9] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B 2012 Acta Phys. Sin. 61 078501 (in Chinese) [马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌 2012 61 078501]
[10] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Zhao Y B 2012 Chin. Phys. B 21 058502
[11] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Song K, Zhao Y B 2012 Chin. Phys. B 21 098502
[12] Zhou H A, Du Z W, Gong K 2006 High Power Laser Part. Beams 18 689 (in Chinese) [周怀安, 杜正伟, 龚克 2006 强激光与粒子束 18 689]
[13] Chen X, Du Z W, Gong K 2007 High Power Laser Part. Beams 19 449 (in Chinese) [陈曦, 杜正伟, 龚克 2007 强激光与粒子束 19 449]
[14] Integrated Systems Engineering AG 2004 ISE-TCAD Dessis Simulation User's Manual (Switzerland: Zurich) p129
[15] Egawa H 1966 IEEE Trans. Electron Dev. 13 754
[16] Ren X R, Chai C C, Ma Z Y, Yang Y T 2013 J. Xidian Univ. 40 45 (in Chinese) [任兴荣, 柴常春, 马振洋, 杨银堂 2013 西安电子科技大学学报 40 45]
[17] Fan J P, Zhang L, Jia X Z 2010 High Power Laser Part. Beams 22 1319 (in Chinese) [范菊平, 张 玲, 贾新章 2010 强激光与粒子束 22 1319]
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[1] Chai C C, Xi X W, Ren X R, Yang Y T, Ma Z Y 2010 Acta Phys. Sin. 59 8118 (in Chinese) [柴常春, 席晓文, 任兴荣, 杨银堂, 马振洋 2010 59 8118]
[2] Xi X W, Chai C C, Ren X R, Yang Y T, Ma Z Y, Wang J 2010 J. Semicond. 31 49
[3] Xi X W, Chai C C, Ren X R, Yang Y T, Zhang B, Hong X 2010 J. Semicond. 31 32
[4] Ren X R, Chai C C, Ma Z Y, Yang Y T, Wang J, Ren L H 2010 Proceedings of the 11th International Conference on Electronic Packaging Technology & High Density Packaging Xi'an, China, August 16-19, p1210
[5] Xi X W, Chai C C, Ren X R, Yang Y T, Zhang B 2009 Proceedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits Suzhou, China, July 6-10, p443
[6] Zhou H A, Du Z W, Gong K 2005 High Power Laser Part. Beams 17 1861 (in Chinese) [周怀安, 杜正伟, 龚克 2005 强激光与粒子束 17 1861]
[7] Arnborg T 1990 IEEE Trans. Electron Devices. 37 2099
[8] Kyuwoon H, Navon D H, Tang T W, Hower P L 1986 IEEE Trans. Electron Dev. 33 1067
[9] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B 2012 Acta Phys. Sin. 61 078501 (in Chinese) [马振洋, 柴常春, 任兴荣, 杨银堂, 陈斌 2012 61 078501]
[10] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Zhao Y B 2012 Chin. Phys. B 21 058502
[11] Ma Z Y, Chai C C, Ren X R, Yang Y T, Chen B, Song K, Zhao Y B 2012 Chin. Phys. B 21 098502
[12] Zhou H A, Du Z W, Gong K 2006 High Power Laser Part. Beams 18 689 (in Chinese) [周怀安, 杜正伟, 龚克 2006 强激光与粒子束 18 689]
[13] Chen X, Du Z W, Gong K 2007 High Power Laser Part. Beams 19 449 (in Chinese) [陈曦, 杜正伟, 龚克 2007 强激光与粒子束 19 449]
[14] Integrated Systems Engineering AG 2004 ISE-TCAD Dessis Simulation User's Manual (Switzerland: Zurich) p129
[15] Egawa H 1966 IEEE Trans. Electron Dev. 13 754
[16] Ren X R, Chai C C, Ma Z Y, Yang Y T 2013 J. Xidian Univ. 40 45 (in Chinese) [任兴荣, 柴常春, 马振洋, 杨银堂 2013 西安电子科技大学学报 40 45]
[17] Fan J P, Zhang L, Jia X Z 2010 High Power Laser Part. Beams 22 1319 (in Chinese) [范菊平, 张 玲, 贾新章 2010 强激光与粒子束 22 1319]
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