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2024, 73(18): 183101.
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2023, 72(14): 147103.
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2021, 70(17): 172401.
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Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei. Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2021, 70(21): 217301.
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
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Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao. Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica,
2019, 68(24): 248501.
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Liu Yan-Li, Wang Wei, Dong Yan, Chen Dun-Jun, Zhang Rong, Zheng You-Dou. Effect of structure parameters on performance of N-polar GaN/InAlN high electron mobility transistor. Acta Physica Sinica,
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2018, 67(17): 178501.
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2017, 66(24): 247302.
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Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong. High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica,
2016, 65(16): 168501.
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2016, 65(3): 038402.
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Li Shuang, Chang Chao, Wang Jian-Guo, Liu Yan-Sheng, Zhu Meng, Guo Le-Tian, Xie Jia-Ling. Suppression of secondary electron multipactor on dielectric surface in TM mode. Acta Physica Sinica,
2015, 64(13): 137701.
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng. Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica,
2013, 62(15): 157202.
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue. A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2012, 61(4): 047301.
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Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei. High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica,
2010, 59(10): 7333-7337.
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Zhao You-Wen, Miao Shan-Shan, Dong Zhi-Yuan, Lü Xiao-Hong, Deng Ai-Hong, Yang Jun, Wang Bo. Thermally induced Fe atom transition from substitutional to interstitial sites in InP and its influence on material property. Acta Physica Sinica,
2007, 56(9): 5536-5541.
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2007, 56(3): 1603-1607.
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Lv YONG-LIANG, ZHOU SHI-PING, XU DE-MING. ANALYSIS OF PROPERTIES OF HIGH-ELECTRON-MOBILITY-TRANSISTOR UNDER OPTICAL ILLUMI NATION. Acta Physica Sinica,
2000, 49(7): 1394-1399.
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