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Due to short of pre-charge, a high power semiconductor switch reversely switching dynistor (RSD) suffers from switching-on locally. Based on the direct pre-charge circuit, a new two-step switching method is introduced. The conditions for the normal turn-on of RSD are analyzed and the model of RSD in a cell structure is built. The model simulation shows that the RSD has better performances: shorter width pre-charge current, and reduced recombination of plasma during the pre-charge. Two-step switching experiment indicates that a proper preliminary turn-on current is important for uniformly switching-on the RSD, and the reverse pre-charge current works mainly for switching preliminary forward current. Simulation and experimental results both show that two-step switching increases RSD uniform turn-on characteristic compared with the direct pre-charge circuit, because the stored charges inside are increased obviously by two-step switching.
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Keywords:
- reversely switching dynistor /
- semiconductor switch /
- two-step switching /
- uniform turn-on
[1] Shao T, Sun G S, Yan P,Wang J, YuanWQ, Zhang S C 2007 Chin.Phys. 16 778
[2] Wang Z, Xu R K, Yang J L, Hua X S, Li L B, Xu Z P, Ning J M,Song F J 2007 Chin. Phys. 16 773
[3] Wang C L, Gao Y, Ma L, Zhang C L, Kim E D, Kim S C 2005Acta Phys. Sin. 54 2296 (in Chinese) [王彩琳,高勇, 马丽, 张昌利, 金垠东, 金相喆 2005 54 2296]
[4] Grekhov I V 1988 Solid-State Electronics 31 1483
[5] Grekhov I V, Gennady A M 2000 Plasma Sci., IEEE Trans. on 281540
[6] Astrova E V, Voronkov V B, Kozlov V A, Lebedev A A 1998 Semicond.Sci. Technol. 31 488
[7] Korotkov S V, Zhmodikov A L 2011 Instrum. Exp. Techniq. 54 61
[8] Lyubutin S K, Rukin S N, Slovikovsky B G, Tsyranov S N 2010Plasma Sci., IEEE Trans. on 38 2627
[9] Fridman B E, Enikeev R S, Korotkov S V, Kovrizhnykh N A,Lobanov K M, Serebrov R A 2011 Plasma Sci., IEEE Trans. on39 769
[10] Yu Y H, Liang L, Yan J S, Peng Y B 2007 Proceeding of the CSEE27 38 (in Chinese) [余岳辉,梁琳, 颜家圣, 彭亚斌 2007 中国电机工程学报 27 38]
[11] Yu Y H, Liang L, Li M T, Liu Y Y, Liu L 2005 Trans. China Electrotech.Soc. 20 36 (in Chinese) [余岳辉, 梁琳,李谋涛, 刘玉华, 刘璐 2005 电工技术学报 20 36]
[12] Li H Y, Yu Y H, Hu Q, Peng Z L, Du R F, Huang Q Z 2003 Proceedingof the CSEE 23 23 (in Chinese)[李焕炀,余岳辉, 胡乾, 彭昭廉, 杜如峰, 黄秋芝 2003 中国电机工程学报 23 23]
[13] Wang H Y, He X P, Chen W Q, Xue B J, Qiu A Z 2009 PlasmaSci., IEEE Trans. on 37 356
[14] Shang C, Liang L, Yu Y H, Wu Y J, Li H L 2011 Plasma Sci.Technol. 13 1267
[15] Korotkov S V 2002 Instrum. Exp. Techniq. 45 437
[16] Rodin P, Grekhov I V 2005 Appl. Phys. Lett. 86 1
[17] Grekhov I V, Korotkov S V, Rodin B P 2008 Plasma Sci., IEEETrans. on 36 378
[18] Liang L, Yu Y H, Peng Y B 2008 Chin. Phys. B 17 2627
[19] Ma L, Gao Y 2009 Acta Phys. Sin. 2009 58 529 (in Chinese) [马丽, 高勇 2009 58 529]
[20] Rim G H, Lee H S, Pavlov E P, Kim G H, Cho C H, Choi Y W,Kim J S 2000 Plasma Sci., IEEE Trans. on 28 1362
[21] Liang L, Yu Y H 2009 J. Electron. Sci. Technolo. of China 7 146
[22] Yu Y H, Li W B, Liang L, Shang C 2010 High Voltage Engineer36 3047 (in Chinese) [余岳辉, 李伟邦, 梁琳, 尚超 2010 高电压技术 36 3047]
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[1] Shao T, Sun G S, Yan P,Wang J, YuanWQ, Zhang S C 2007 Chin.Phys. 16 778
[2] Wang Z, Xu R K, Yang J L, Hua X S, Li L B, Xu Z P, Ning J M,Song F J 2007 Chin. Phys. 16 773
[3] Wang C L, Gao Y, Ma L, Zhang C L, Kim E D, Kim S C 2005Acta Phys. Sin. 54 2296 (in Chinese) [王彩琳,高勇, 马丽, 张昌利, 金垠东, 金相喆 2005 54 2296]
[4] Grekhov I V 1988 Solid-State Electronics 31 1483
[5] Grekhov I V, Gennady A M 2000 Plasma Sci., IEEE Trans. on 281540
[6] Astrova E V, Voronkov V B, Kozlov V A, Lebedev A A 1998 Semicond.Sci. Technol. 31 488
[7] Korotkov S V, Zhmodikov A L 2011 Instrum. Exp. Techniq. 54 61
[8] Lyubutin S K, Rukin S N, Slovikovsky B G, Tsyranov S N 2010Plasma Sci., IEEE Trans. on 38 2627
[9] Fridman B E, Enikeev R S, Korotkov S V, Kovrizhnykh N A,Lobanov K M, Serebrov R A 2011 Plasma Sci., IEEE Trans. on39 769
[10] Yu Y H, Liang L, Yan J S, Peng Y B 2007 Proceeding of the CSEE27 38 (in Chinese) [余岳辉,梁琳, 颜家圣, 彭亚斌 2007 中国电机工程学报 27 38]
[11] Yu Y H, Liang L, Li M T, Liu Y Y, Liu L 2005 Trans. China Electrotech.Soc. 20 36 (in Chinese) [余岳辉, 梁琳,李谋涛, 刘玉华, 刘璐 2005 电工技术学报 20 36]
[12] Li H Y, Yu Y H, Hu Q, Peng Z L, Du R F, Huang Q Z 2003 Proceedingof the CSEE 23 23 (in Chinese)[李焕炀,余岳辉, 胡乾, 彭昭廉, 杜如峰, 黄秋芝 2003 中国电机工程学报 23 23]
[13] Wang H Y, He X P, Chen W Q, Xue B J, Qiu A Z 2009 PlasmaSci., IEEE Trans. on 37 356
[14] Shang C, Liang L, Yu Y H, Wu Y J, Li H L 2011 Plasma Sci.Technol. 13 1267
[15] Korotkov S V 2002 Instrum. Exp. Techniq. 45 437
[16] Rodin P, Grekhov I V 2005 Appl. Phys. Lett. 86 1
[17] Grekhov I V, Korotkov S V, Rodin B P 2008 Plasma Sci., IEEETrans. on 36 378
[18] Liang L, Yu Y H, Peng Y B 2008 Chin. Phys. B 17 2627
[19] Ma L, Gao Y 2009 Acta Phys. Sin. 2009 58 529 (in Chinese) [马丽, 高勇 2009 58 529]
[20] Rim G H, Lee H S, Pavlov E P, Kim G H, Cho C H, Choi Y W,Kim J S 2000 Plasma Sci., IEEE Trans. on 28 1362
[21] Liang L, Yu Y H 2009 J. Electron. Sci. Technolo. of China 7 146
[22] Yu Y H, Li W B, Liang L, Shang C 2010 High Voltage Engineer36 3047 (in Chinese) [余岳辉, 李伟邦, 梁琳, 尚超 2010 高电压技术 36 3047]
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