GaSe/β-Ga2O3 heterojunction based self-powered solar-blind ultraviolet photoelectric detector

Su Ran; Xi Zhao-Ying; Li Shan; Zhang Jia-Han; Jiang Ming-Ming; Liu Zeng; Tang Wei-Hua

doi:10.7498/aps.73.20240267

Abstract

UV photodetectors have the advantages of high sensitivity and fast response speed. As an ultra-wide bandgap semiconductor, gallium oxide (Ga₂O₃) plays an extremely important role in detecting deep ultraviolet. It can form a typical type-II heterostructure with GaSe, promoting carrier separation and transport. In this work, Ga₂O₃ epitaxial films are grown on sapphire substrates by plasma-assisted chemical vapor deposition (PECVD). The GaSe films and GaSe/β-Ga₂O₃ heterojunction photodetectors are grown on gallium oxide films by Bridgeman technology. The detector has a good response to deep ultraviolet light, the dark current of the device is only 1.83 pA at 8 V, and the photocurrent reaches 6.5 nA at 254 nm. The UVC/Visible (254 nm/600 nm) has a high rejection ratio of about 354. At very small light intensities, the responsivity and detection can reach 1.49 mA/W and 6.65 × 10¹¹ Jones, respectively. At the same time, due to the photovoltaic effect formed by the space charge region at the junction interface, the detector exhibits self-powered supply performance at zero bias voltage, and the open-circuit voltage is 0.2 V. In addition, the detector has a very good sensitivity. The device can respond quickly, whether it is irradiated with different light intensities under constant voltage, or with different voltages under constant light intensity. It can respond within milliseconds under a bias voltage of 10 V. This work demonstrates the enormous potential of heterojunctions in photoelectric detection by analyzing the photophysical and interface physical issues involved in heterojunction photodetectors, and provides a possibility for detecting the deep ultraviolet of gallium oxide.

Keywords:

Authors and contacts

1.
Innovation Center of Gallium Oxide Semiconductor (IC-GAO), College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
2.
School of Electronic Information Engineering, Inner Mongolia University, Hohhot 010021, China
3.
School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
4.
MIIT Key Laboratory of Aerospace Information Materials and Physics, College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China

Corresponding author: Liu Zeng, zengliu_imu@163.com ; Tang Wei-Hua, whtang@njupt.edu.cn

Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 62204125, 62305171), the National Key Research and Development Program of China (Grant No. 2022YFB3605404), and the Joint Funds of the National Natural Science Foundation of China (Grant No. U23A20349).

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References

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[34]	Chen M, Zhang Z, Lv Z, Zhan R, Chen H, Jiang H, Chen J 2022 ACS Appl. Nano Mater. 5 351 Google Scholar
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[36]	Filippo E, Tepore M, Baldassarre F, Siciliano T, Micocci G, Quarta G, Calcagnile L, Tepore A 2015 Appl. Surf. Sci. 338 69 Google Scholar
[37]	Kong W Y, Wu G A, Wang K Y, Zhang T F, Zou Y F, Wang D D, Luo L B 2016 Adv. Mater. 28 10725 Google Scholar
[38]	Liang S J, Cheng B, Cui X, Miao F 2019 Adv. Mater. 32 1903800 Google Scholar
[39]	Kumar N, Kumail M, Lee J, Park H G, Kim J 2023 Mater. Res. Bull. 168 112466 Google Scholar
[40]	Zhuo R, Wu D, Wang Y, Wu E, Jia C, Shi Z, Xu T, Tian Y, Li X 2018 J. Mater. Chem. C 6 10982 Google Scholar
[41]	Ma Y, Chen T, Zhang X, Tang W, Feng B, Hu Y, Zhang L, Zhou X, Wei X, Xu K, Mudiyanselage D, Fu H, Zhang B 2022 ACS Appl. Mater. Interfaces 14 35194 Google Scholar
[42]	Tan P, Zhao X, Hou X, Yu Y, Yu S, Ma X, Zhang Z, Ding M, Xu G, Hu Q, Gao N, Sun H, Mu W, Jia Z, Tao X, Long S 2021 Adv. Opt. Mater. 9 2100173 Google Scholar
[43]	Park S, Park T, Park J H, Min J Y, Jung Y, Kyoung S, Kang T Y, Kim K H, Rim Y S, Hong J 2022 ACS Appl. Mater. Interfaces 14 25648 Google Scholar
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[45]	Nguyen T M H, Tran M H, Bark C W 2023 ACS Appl. Electronic Mater. 5 6459 Google Scholar
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Cited By

图 1 (a)实验装置示意图; (b) GaSe/β-Ga₂O₃异质结光电探测器示意图

Figure 1. (a) Schematic diagram of the experimental setup; (b) schematic diagram of the GaSe/β-Ga₂O₃ heterojunction photodetector.

DownLoad: Full-Size Img PowerPoint

图 2 (a) GaSe薄膜XRD图; (b) Ga₂O₃薄膜XRD图; (c) Ga₂O₃薄膜表面SEM图; (d) GaSe表面SEM图; (e) Ga₂O₃上生长GaSe的断面SEM图; (f) 蓝宝石上生长Ga₂O₃而未生长GaSe的断面SEM图; (g) GaSe, β-Ga₂O₃薄膜和GaSe/β-Ga₂O₃异质结的吸收光谱曲线图; (h) GaSe薄膜的(αhυ) ²-hυ曲线图; (i) Ga₂O₃薄膜的(αhυ) ²-hυ曲线图

Figure 2. (a) XRD of GaSe films; (b) XRD of Ga₂O₃ films; (c) SEM images of Ga₂O₃ films; (d) SEM images of GaSe surfaces; (e) cross-sectional SEM images of GaSe grown on Ga₂O₃; (f) cross-sectional SEM images of Ga₂O₃ grown without GaSe on sapphire; (g) absorption spectra of GaSe, β-Ga₂O₃ films and GaSe/β-Ga₂O₃ heterojunctions; (h) (αhυ)²-hυ curves of GaSe films; (i) (αhυ)²-hυ curves of Ga₂O₃ films.

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图 3 (a) 基于异质结的PD在具有不同光强度的254 nm光的黑暗和照明下的半对数I-V曲线图; (b) 光电探测器在黑暗和光照下的响应曲线图; (c) Ga₂O₃薄膜在黑暗和光照下的响应曲线图; (d) GaSe在黑暗和光照下的响应曲线图; (e) 0 V电压下光电探测器在不同光强的I-t曲线图; (f) 强度为365.3 μW/cm²的254 nm光照下的不同偏置电压下光开关I-t曲线图; (g) 在10 V、强度为365.3 μW/cm²的254 nm光照下拟合响应时间图; (h) 在10 V、强度为348.3 μW/cm²的365 nm光照下拟合响应时间图

Figure 3. (a)The semi log I-V curves of the heterojunction-based PD under dark and illumination of 254 nm light with various light intensities; the semi log I-V curves under darkness and light of (b) photodetector, (c) Ga₂O₃ film, (d) GaSe; I-t curves with light on/off switching at (e) 0 V under various light intensities and (f) various bias voltages under 254 nm light illumination with an intensity of 365.3 μW/cm²; fitting response times under (g) 254 nm light illumination with an intensity of 365.3 μW/cm² at 10 V, (h) 365 nm light illumination with an intensity of 348.3 μW/cm² at 10 V.

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图 4 (a) GaSe/β-Ga₂O₃异质结光电探测器的响应光谱图; (b) 响应度和探测率与光照强度的线性关系图

Figure 4. (a) Spectrum responsivity of the GaSe/β-Ga₂O₃ photodetector; (b) linear relationship between responsivity and detectivity as a function of light intensity.

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图 5 (a) GaSe和Ga₂O₃的能带排列图; (b) 异质结零偏压下的能带传输机制图; (c)异质结正偏压下的能带传输机制和等效电路模型图

Figure 5. (a) Band arrangement of GaSe and Ga₂O₃; (b) band transport mechanism of heterojunction at zero bias; (c) band transport mechanism and equivalent circuit model of heterojunction under positive bias.

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表 1 氧化镓基光电探测器性能比较

Table 1. Comparison of the performances of Ga₂O₃-based photodetectors

photodetector	Wavelength/nm	I_dark/pA	PDCR	R/(mA·W^–1)	D^*/Jones	Reference
GaSe/β-Ga₂O₃	254	1.83	5.5×10³	1.49	6.65×10¹¹	This work
MoS₂/Ga₂O₃	254	0.9	670	2.05	1.2×10¹¹	[40]
p-GaN/β-Ga₂O₃	254	3.08	4.1×10³	3800	1.12×10¹⁴	[41]
AgNW-Ga₂O₃	254	<10	1.2×10⁵	14.8	5.1×10¹²	[42]
Ag₂O/β-Ga₂O₃	254	92.8	3.4×10⁸	25.65	6.1×10¹¹	[43]
CuGaO₂/Ga₂O₃	254	100	2.3×10⁴	0.03	0.9×10¹¹	[44]
CuCrO₂/Ga₂O₃	254	18	3.5×10⁴	0.12	4.6×10¹¹	[44]
FTO/TiO2/Si-doped Ga₂O₃/TFB/PEDOT:PSS	254	390	242.56	1.02	0.46×10¹¹	[45]

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[1]	Xi Z Y, Liu Z, Yang L L, Tang K, Li L, Shen G H, Zhang M L, Li S, Guo Y F, Tang W H 2023 ACS Appl. Mater. Interfaces 15 40744 Google Scholar
[2]	Lee S H, Kim S B, Moon Y J, Kim S M, Jung H J, Seo M S, Lee K M, Kim S K, Lee S W 2017 ACS Photon. 4 2937 Google Scholar
[3]	Tang X, Li K H, Zhao Y, Sui Y, Liang H, Liu Z, Liao C H, Babatain W, Lin R, Wang C, Lu Y, Alqatari F S, Mei Z, Tang W, Li X 2021 ACS Appl. Mater. Interfaces 14 1304
[4]	Wang Y H, Yang Z, Li H, Li S, Zhi Y, Yan Z, Huang X, Wei X, Tang W H, Wu Z 2020 ACS Appl. Mater. Interfaces 12 47714 Google Scholar
[5]	Imura S, Mineo K, Miyakawa K, Nanba M, Ohtake H, Kubota M 2018 IEEE Sensors J. 18 3108 Google Scholar
[6]	Sorifi S, Kaushik S, Sheoran H, Singh R 2022 J. Phys. D: Appl. Phys. 55 365105 Google Scholar
[7]	Chen Y, Lu Y, Liao M, Tian Y, Liu Q, Gao C, Yang X, Shan C 2019 Adv. Funct. Mater. 29 1906040 Google Scholar
[8]	Zhao B, Wang F, Chen H, Zheng L, Su L, Zhao D, Fang X 2017 Adv. Funct. Mater. 27 1700264 Google Scholar
[9]	Ozbay E, Biyikli N, Kimukin I, Kartaloglu T, Tut T, Aytur O 2004 IEEE J. Select. Topics Quantum Electron. 10 742 Google Scholar
[10]	Xu Z, Zang J, Yang X, Chen Y, Lou Q, Li K, Lin C, Zhang Z, Shan C 2021 Semicond. Sci. Technol. 36 065007 Google Scholar
[11]	Liu Z, Li S, Yan Z, Liu Y, Zhi Y, Wang X, Wu Z, Li P, Tang W 2020 J. Mater. Chem. C 8 5071 Google Scholar
[12]	Li L, Liao F, Hu X 2020 Superlattices Microstruct. 141 106502 Google Scholar
[13]	Jing L, Ai C, Guo X, Cao J, Jing D, Luo B, Ma L 2023 Ind. Eng. Chem. Res. 62 6103 Google Scholar
[14]	Moon S, Bae J, Kim J 2022 J. Mater. Chem. C 10 6281 Google Scholar
[15]	Lu C, Gao L, Meng F, Zhang Q, Yang L, Liu Z, Zhu M, Chen X, Lyu X, Wang Y, Liu J, Ji A, Li P, Gu L, Cao Z, Lu N 2023 J. Appl. Phys. 133 045306 Google Scholar
[16]	Han Y, Jiao S, Jing J, Chen L, Rong P, Ren S, Wang D, Gao S, Wang J 2023 Nano Res. 17 2960 Google Scholar
[17]	Li X, Dong J, Idrobo J C, Puretzky A A, Rouleau C M, Geohegan D B, Ding F, Xiao K 2016 J. Am. Chem. Soc. 139 482 Google Scholar
[18]	Qasrawi A F 2005 Cryst. Res. Technol. 40 610 Google Scholar
[19]	Lei S, Ge L, Liu Z, Najmaei S, Shi G, You G, Lou J, Vajtai R, Ajayan P M 2013 Nano Lett. 13 2777 Google Scholar
[20]	Yuan X, Tang L, Liu S, Wang P, Chen Z, Zhang C, Liu Y, Wang W, Zou Y, Liu C, Guo N, Zou J, Zhou P, Hu W, Xiu F 2015 Nano Lett. 15 3571 Google Scholar
[21]	Ben Aziza Z, Henck H, Pierucci D, Silly M G, Lhuillier E, Patriarche G, Sirotti F, Eddrief M, Ouerghi A 2016 ACS Nano 10 9679 Google Scholar
[22]	Parlak M, Qasrawi A F, Ercelebi C 2003 Mater. Sci. 38 1507 Google Scholar
[23]	Yan Z, Li S, Liu Z, Zhi Y, Dai J, Sun X, Sun S, Guo D, Wang X, Li P, Wu Z, Li L, Tang W 2020 J. Mater. Chem. C 8 4502 Google Scholar
[24]	Mudiyanselage D H, Wang D, Fu H 2022 IEEE J. Electron Devices Soc. 10 89 Google Scholar
[25]	Lin R, Zheng W, Zhang D, Zhang Z, Liao Q, Yang L, Huang F 2018 ACS Appl. Mater. Interfaces 10 22419 Google Scholar
[26]	Abdullah M M, Bhagavannarayana G, Wahab M A 2010 J. Cryst. Growth 312 1534 Google Scholar
[27]	Jubu P R, Yam F K, Igba V M, Beh K P 2020 J. Solid State Chem. 290 121576 Google Scholar
[28]	张茂林, 马万煜, 王磊, 刘增, 杨莉莉, 李山, 唐为华, 郭宇锋 2023 72 160201 Google Scholar Zhang M L, Ma W Y, Wang L, Liu Z, Yang L L, Li S, Tang W H, Guo Y F 2023 Acta Phys. Sin. 72 160201 Google Scholar
[29]	Li Z, Xu Y, Zhang J, Cheng Y, Chen D, Feng Q, Xu S, Zhang Y, Zhang J, Hao Y, Zhang C 2019 IEEE Photon. J. 11 1 Google Scholar
[30]	He T, Li C, Zhang X, Ma Y, Cao X, Shi X, Sun C, Li J, Song L, Zeng C, Zhang K, Zhang X, Zhang B 2019 Phys. Status Solidi. (a) 217 1900861 Google Scholar
[31]	Yakimov E B, Polyakov A Y, Shchemerov I V, Smirnov N B, Vasilev A A, Vergeles P S, Yakimov E E, Chernykh A V, Shikoh A S, Ren F, Pearton S J 2020 APL Mater. 8 111105 Google Scholar
[32]	Bae J, Park J H, Jeon D W, Kim J 2021 APL Mater. 9 101108 Google Scholar
[33]	Qian L X, Liu H Y, Zhang H F, Wu Z H, Zhang W L 2019 Appl. Phys. Lett. 114 113506 Google Scholar
[34]	Chen M, Zhang Z, Lv Z, Zhan R, Chen H, Jiang H, Chen J 2022 ACS Appl. Nano Mater. 5 351 Google Scholar
[35]	Ricci F, Boschi F, Baraldi A, Filippetti A, Higashiwaki M, Kuramata A, Fiorentini V, Fornari R 2016 J. Phys. : Condens. Matter 28 224005 Google Scholar
[36]	Filippo E, Tepore M, Baldassarre F, Siciliano T, Micocci G, Quarta G, Calcagnile L, Tepore A 2015 Appl. Surf. Sci. 338 69 Google Scholar
[37]	Kong W Y, Wu G A, Wang K Y, Zhang T F, Zou Y F, Wang D D, Luo L B 2016 Adv. Mater. 28 10725 Google Scholar
[38]	Liang S J, Cheng B, Cui X, Miao F 2019 Adv. Mater. 32 1903800 Google Scholar
[39]	Kumar N, Kumail M, Lee J, Park H G, Kim J 2023 Mater. Res. Bull. 168 112466 Google Scholar
[40]	Zhuo R, Wu D, Wang Y, Wu E, Jia C, Shi Z, Xu T, Tian Y, Li X 2018 J. Mater. Chem. C 6 10982 Google Scholar
[41]	Ma Y, Chen T, Zhang X, Tang W, Feng B, Hu Y, Zhang L, Zhou X, Wei X, Xu K, Mudiyanselage D, Fu H, Zhang B 2022 ACS Appl. Mater. Interfaces 14 35194 Google Scholar
[42]	Tan P, Zhao X, Hou X, Yu Y, Yu S, Ma X, Zhang Z, Ding M, Xu G, Hu Q, Gao N, Sun H, Mu W, Jia Z, Tao X, Long S 2021 Adv. Opt. Mater. 9 2100173 Google Scholar
[43]	Park S, Park T, Park J H, Min J Y, Jung Y, Kyoung S, Kang T Y, Kim K H, Rim Y S, Hong J 2022 ACS Appl. Mater. Interfaces 14 25648 Google Scholar
[44]	Wu C, Qiu L, Li S, Guo D, Li P, Wang S, Du P, Chen Z, Liu A, Wang X, Wu H, Wu F, Tang W 2021 Mater. Today Phys. 17 100335 Google Scholar
[45]	Nguyen T M H, Tran M H, Bark C W 2023 ACS Appl. Electronic Mater. 5 6459 Google Scholar
[46]	Wang Y, Tang Y, Li H, Yang Z, Zhang Q, He Z, Huang X, Wei X, Tang W, Huang W, Wu Z 2021 ACS Photon. 8 2256 Google Scholar

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[14]	. Barrier Tunable Gallium oxide Schottky diode. Acta Physica Sinica, 2021, (): . doi: 10.7498/aps.70.20211536
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[18]	Zheng Jia-Jin, Wang Ya-Ru, Yu Ke-Han, Xu Xiang-Xing, Sheng Xue-Xi, Hu Er-Tao, Wei Wei. Field effect transistor photodetector based on graphene and perovskite quantum dots. Acta Physica Sinica, 2018, 67(11): 118502. doi: 10.7498/aps.67.20180129
[19]	Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun. Fabrication and characteristics of high performance SOI-based Ge PIN waveguide photodetector. Acta Physica Sinica, 2017, 66(19): 198502. doi: 10.7498/aps.66.198502
[20]	Ma Hai-Lin, Su Qing. Effect of oxygen pressure on structure and optical band gap of gallium oxide thin films prepared by sputtering. Acta Physica Sinica, 2014, 63(11): 116701. doi: 10.7498/aps.63.116701

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Vol. 73, Issue 11 - 2024-06-05

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GaSe/β-Ga₂O₃ heterojunction based self-powered solar-blind ultraviolet photoelectric detector

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Corresponding author: Liu Zeng, zengliu_imu@163.com ; Tang Wei-Hua, whtang@njupt.edu.cn

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