Photodetectors based on homojunctions of transition metal dichalcogenides

Shu Yan-Tao; Zhang You-Wei; Wang Shun

doi:10.7498/aps.70.20210859

Abstract

In recent years, two-dimensional transition metal chalcogenides (TMDCs) have been widely studied in the field of photodetection due to their excellent electronic and optical properties. Compared with the more reported field-effect transistor and heterojunction devices, homojunction devices have unique advantages in photodetection. This article focuses on the researches of photodetectors based on the homojunctions of TMDCs. First, the working principle of homojunction optoelectronic device is introduced. Then, the reported TMDCs based homojunctions are classified and summarized according to the adopted carrier modulation techniques. In addition, this article also specifically analyzes the transport process of photogenerated carriers in homojunction device, and explains why the lateral p-i-n homojunction exhibits fast photoresponse speed. Finally, the research progress of the TMDCs based homojunction photodetectors is summarized and the future development is also prospected.

Keywords:

Authors and contacts

1.
Hubei Key Laboratory of Gravitation and Quantum Physics, MOE Key Laboratory of Fundamental Physical Quantities Measurement, National Precise Gravity Measurement Facility, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
2.
Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518057, China

Corresponding author: Zhang You-Wei, youweizhang@hust.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 12074134), the Shenzhen Science and Technology Project, China (Grant Nos. JCYJ20180507183904841, GJHZ20200731095203009), and the Natural Science Foundation of Hubei Province, China (Grant No. 2020CFB406)

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Cited By

图 1 基于电场调控的TMDCs同质结示意图与能带图

Figure 1. Schematic and band diagram of TMDCs homojunction based on electric field regulation.

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图 2 基于电场调控的TMDCs同质结光电探测器　(a)分离栅极调控的同质结示意图; (b)不同栅压配置下的输出特性; (c) PN配置下器件的光响应^[41]; (d)铁电极化调控的同质结示意图; (e)不同光功率下的I_sc 和 V_oc; (f)光电流的响应时间^[52]; (g) UV诱导电场调控的同质结示意图; (h)输出特性随写入电压的变化; (i)不同光功率下的动态光响应^[56]

Figure 2. TMDCs homojunction photodetectors based on electric field regulation: (a) Schematic diagram of homojunction controlled by local gates; (b) output characteristics under different gate voltage configurations; (c) photoresponse of the device in PN configuration^[41]; (d) schematic diagram of homojunction defined by ferroelectric polarization; (e) I_sc and V_oc at different laser powers; (f) the response time of photocurrent^[52]; (g) schematic diagram of homojunction regulated by UV-induced electric field; (h) variation of output characteristics with writing voltage; (i) dynamic responses under different laser powers^[56].

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图 3 TMDCs的p型和n型SCTD过程的能级示意图

Figure 3. Schematic energy levels for p-type and n-type SCTD processes of TMDCs.

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图 4 基于SCTD的TMDCs同质结光电探测器　(a)光照下基于AlCl₃化学掺杂的同质结示意图与电路图; (b) V_G = –40 V时的 I_D-V_D曲线; (c)不同波长光照下的EQE和D^*(V_D = 1.5 V, V_G = 0, ±40 V)^[58]; (d)光照下基于CHF₃等离子体处理的垂直同质结光伏效应示意图; (e)暗态和(f)AM1.5 G光照下的J-V曲线^[65]; (g)激光诱导WSe₂同质结示意图; (h)长时间循环光响应(V_ds = 0 V, V_g = 40 V)^[69]; (i)基于DUV诱导掺杂的垂直同质结示意图^[70]

Figure 4. TMDCs homojunction photodetectors based on SCTD: (a) Schematic diagram and circuit diagram of homojunction based on chemical doping by AlCl₃ under illumination; (b) I_D-V_D curve at V_G = –40 V; (c) EQE and D^* under different wavelengths of light (V_D = 1.5 V, V_G = 0, ± 40 V)^[58]; (d) photovoltaic effect of vertical homojunction based on CHF₃ plasma treatment under illumination; J-V curves of (e) dark state and (f)AM1.5 G illumination^[65]; (g) schematic diagram of laser-induced WSe₂ homojunction; (h) Temporal photocurrent response(V_ds = 0 V, V_g = 40 V)^[69]; (i) schematic diagram of vertical homojunction based on DUV-induced doping^[70].

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图 5 基于元素替位掺杂、缺陷工程和厚度调制的TMDCs同质结光电探测器　(a)基于元素替位掺杂的同质结示意图与光学图像; (b)栅极电压对光伏性能的调制; (c)不同光功率下的光伏性能(V_g = 0, λ = 660 nm)^[86]; (d)基于S空位自修复的单层MoS₂横向同质结示意图; (e)光照下的输出特性曲线(λ = 575 nm)^[91]; (f) 基于S空位自修复的垂直同质结示意图与光学图像^[92]; (g)单层和多层MoS₂以及Ti的能带图; (h) MoS₂单层-多层结示意图; (i) 470 nm光照下器件的光响应特性^[93]

Figure 5. TMDCs homojunction photodetectors based on element substitution doping, defect engineering and thickness modulation: (a) Schematic diagram and optical image of homojunction based on element substitution doping; (b) modulation of gate voltage on photovoltaic performance; (c) photovoltaic performance under different optical power(V_g = 0, λ = 660 nm)^[86]; (d) schematic diagram of single-layer MoS₂ lateral homojunction based on S vacancy self-healing; (e) output curve under illumination(λ = 575 nm)^[91]; (f) schematic diagram and optical image of vetical homojunction based on S vacancy self-healing^[92]; (g) the band diagram of single and multilayer MoS₂ and Ti; (h) schematic diagram of the multilayer/monolayer MoS₂ junction; (i) photoresponse characteristics of the device under 470 nm illumination^[93].

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图 6 (a)横向p-n结与(b)横向p-i-n结的器件结构与对应的光生载流子输运过程

Figure 6. Device structures and corresponding photogenerated carrier transport processes for (a) lateral p-n junction and (b) lateral p-i-n junction.

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图 7 基于横向p-i-n同质结的超快WSe₂光电二极管　(a)器件光学图像; (b)掺杂分布的横截面示意图; (c)V_ds = 1 V时的输出特性曲线; (d)零偏和反向偏置状态下响应度和比探测率随入射光功率的变化; (e)光电流响应时间; (f) p-i-n光电二极管的带宽频率响应^[68]

Figure 7. Ultrafast WSe₂ photodiode based on lateral p-i-n homojunction: (a) Optical image of the device; (b) cross-sectional schematic diagram of doping distribution; (c) output curve at V_ds = 1 V; (d) R and D^* as a function of incident light power density under zero bias and reverse bias; (e) the response time of photocurrent; (f) broadband frequency response of the p-i-n photodiode^[68].

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表 1 基于TMDCs同质结的光电探测器性能对比

Table 1. Performance comparison of photodetectors based on TMDCs homojunctions.

材料	器件结构	载流子调控方式		整流比	理想因子	光源波长/nm	偏置电压 V_pn/V	响应度/ mA·W^–1	比探测率/ Jones	响应时间		文献
材料	器件结构	n型	p型	整流比	理想因子	光源波长/nm	偏置电压 V_pn/V	响应度/ mA·W^–1	比探测率/ Jones	上升/ms	下降/ms	文献
单层WSe₂	横向p-n	正栅压	负栅压	10⁵	1.9	532	2	210	—	—	—	[38]
单层WSe₂	横向p-n	正栅压	负栅压	—	2.14	532	–1	0.7	—	10.4	9.8	[41]
多层MoTe₂	横向p-n	铁电极化	铁电极化	5×10⁵	2	520	0	5	3×10¹²	0.03	0.045	[52]
多层MoS₂	横向p-n	铁电极化	铁电极化	10⁵	1.7	532	0	15	—	0.01	0.02	[54]
少层MoTe₂	横向p-n	UV诱导电场	UV诱导电场	10³	2.1	532	0	160	—	2	2	[57]
多层MoS₂	横向p-n	—	AuCl₃	60	1 (V_g = –40 V)	500	1.5	5070	3×10¹⁰	100	200	[58]
少层MoS₂	垂直p-n	BV	AuCl₃	100	1.6	655	–1	30	—	—	—	[59]
少层WSe₂	横向p-n	N₂H₄	—	~10³	—	470	–5	30	6.18×10⁸	2	2	[60]
多层WSe₂	横向p-n	N₂H₄	—	10⁵	1.1	635	–5 (V_g = –40 V)	468	2.5×10⁹	4	4	[37]
少层MoSe₂	横向p-n	PPh3	MoO_x(退火)	10⁴	1.2	532	0	1300	—	—	—	[61]
多层WSe₂	横向p-n	PEI	负栅压	10³	1.66	520	0	80	10¹¹	0.2	0.06	[63]
少层WSe₂	横向p-n	CTAB	—	10³	1.64	450	–1.5	3×10⁴	10¹¹	7.8	7.7	[64]
多层WSe₂	横向p-n	—	N₂O plasma	10⁶(V_g = –60 V)	3.1	520	1	2490	—	8	30	[66]
多层WSe₂	横向p-n	—	WO_x(O₂ Plasma)	—	—	520	1	250	7.7×10⁹	41.8	2289.8	[67]
多层WSe₂	横向p-n	正栅压	WO_x(laser)	—	—	633	0	800	—	0.136	0.039	[69]
多层MoTe₂	垂直p-n	DUV(N₂)	—	10⁴	1.05	530	0	850	—	—	—	[70]
多层MoTe₂	横向p-n	DUV(N₂)	—	2.5×10⁴	~1	850	0	5500	—	29	38	[71]
少层MoS₂	垂直p-n	元素掺杂(Fe)	元素掺杂(Nb)	—	~2.5	660	0	25	—	80	80	[86]
单层MoS₂	横向n⁺–n	PSS诱导缺陷修复(n⁺)	—(n)	~150	1.6	575	0	308	—	810	750	[91]
双层MoS₂	垂直n⁺–n	PSS诱导缺陷修复(n⁺)	—(n)	72	1.6	532	0	54.6	—	3100	3800	[92]
多层WSe₂	横向p-i-n	WSe_2–_y (Ar Plasma)	WO_x(O₂ plasma)	10⁶	1.14	450	0	105	2.2×10¹³	0.000264	0.000552	[68]
MoS₂	横向单层-多层	—	—	10³(V_g = 10 V)	1.95(V_g = 5 V)	470	—	10⁶	7×10¹⁰	2	2000	[93]

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