a-C: Fe/AlOx/Si基异质结的光伏效应

吴利华; 章晓中; 于奕; 万蔡华; 谭新玉

doi:10.7498/aps.60.037807

摘要

使用脉冲激光沉积(PLD)依次沉积氧化铝和碳膜制备了a-C: Fe/AlOx/Si基异质结,研究了其光伏效应及其在太阳能电池上的应用.该太阳能电池在标准日光照射(AM1.5,100 mW/cm2)下,可获得0.33 V的开路电压和4.5 mA/cm2的电流密度,太阳能电池的转换效率为0.35%.通过C-V测量,证明了氧化铝层的引入降低了界面能级数目,增加了界面势垒高度.界面能级数目降低减少了光生载流子在界面复合的

关键词:

Abstract

The photovoltaic effect of a-C: Fe/AlOx/Si based heterostructures prepared by Pulsed Laser Deposition (PLD) and its applications for solar cells were investigated. Thin alumina layer with a thickness of ~2nm was introduced to the interface between carbon and silicon, and the photovoltatic properties, such as open circuit voltage of ~0.33 V and short current density of ~4.5 mA/cm2, were improved dramatically compared with the samples without the insulation alumina layer. This may be related to the improvement of interface quality, where there are lower recombination centers such as defects and traps, which are approved by the C-V measurement. This work may shed light on the carbon/silicon based solar cells.

Keywords:

作者及机构信息

1.
先进材料教育部重点实验室,清华大学材料科学与工程系,北京 100084

基金项目: 国家自然科学基金委-广东联合基金重点项目(批准号: U0734001), 国家自然科学基金(批准号: 50772054), 973计划前期研究专项(批准号: 2008CB617601)资助的课题.

Authors and contacts

1.
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

参考文献

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施引文献

[1]	Goetzberger A, Hebling C, Schock H W 2003 Mat. Science Eng. R 40 1
[2]	90 3438
[3]	Kelzenberg M D, Boettcher S W, Petykiewicz J A, Turner-Evans D B, Putnam M C, Warren E L, Spurgeon J M, Briggs R M, Lewis N S, Atwater H A 2010 Nature Mater. 9 239
[4]	Harry A A, Albert P 2010 Nature 9 205
[5]	Wenham S R, Green MA, Watt M E, Corkish R 2007 Applied photovoltaics (2nd ed) (London: Earthscan Publications Ltd.)
[6]	Zhu H W, Wei J Q, Wang K L, Wu D H 2009 Sol. Energy Mater Sol. Cells 93 1461
[7]	Hao H Y, Kong G L, Zeng X B, Xu Y, Diao H W, Liao X B 2005 Acta Phys. Sin. 54 3327 (in Chinese) [郝会颖、孔光临、曾湘波、许颖、刁宏伟、廖显伯 2005 54 3327]
[8]	Li Y J, Zheng J G, Feng L H, Li B, Zeng G G, Cai Y P, Zhang J Q, Li W, Lei Z, Wu L L, Cai W 2010 Acta Phys. Sin. 59 625 (in Chinese) [李愿杰、郑家贵、冯良桓、黎兵、曾广根、蔡亚平、张静全、李卫、雷智、武莉莉、蔡伟 2010 59 625]
[9]	Zhang W Y, Wu X P, Sun L J, Lin B X, Fu Z X 2008 Acta Phys. Sin. 57 4471 (in Chinese) [张伟英、邬小鹏、孙利杰、林碧霞、傅竹西 2008 57 4471]
[10]	Li Z R, Saini V, Dervishi E, Xu Y, Mahmood M, Biris A R, Biris A S 2009 Nanotech Conference Expo 1 53
[11]	Krishna K M, Nukaya Y, Soga T, Jimbo T, Umeno M 2001 Sol. Energy Mater. Sol. Cells 65 163
[12]	Tetsuo S, Toshihide K, Yasuhiko H, Jimbo T 2005 Thin Solid Films 482 86
[13]	Hao L Z, Xue Q Z, Gao X L, Li Q, Zheng Q B, Yan K Y 2007 J. Appl. Phys. 101 053718
[14]	Wan C H, Zhang X Z, Zhang X, Gao X L, Tan X Y 2009 Appl. Phys. Lett. 95 022105
[15]	Freitag M, Martin Y, Misewich J A 2003 Nano. Lett. 3 1067
[16]	Balasubramanian K, Fan Y W, Burghard M 2004 Appl. Phys. Lett. 84 2400
[17]	Lee J U 2005 Appl. Phys. Lett. 87 073101
[18]	Kymakis E, Amaratunga G A 2002 J. Appl. Phys. Lett. 80 112
[19]	Kawano T, Christensen D, Chen S P, Cho C Y, Lin L W 2006 Appl. Phys. Lett. 89 163510
[20]	Behnam A, Johnson J L, Choi Y, Ertosun M G, Okyay A K, Kapur P, Saraswat K C, Ural A 2008 Appl. Phys. Lett. 92 243116
[21]	Wei J Q, Jia Y, Shu Q K, Gu Z Y, Wang K L, Zhuang D M, Zhang G, Wang Z C, Luo J B, Cao A Y, Wu D H 2007 Nano. Lett. 7 2317
[22]	Zhou S Y, Gweon G H, Fedorov A V, First P N, De Heer W A, Lee D H, Guinea F, Neto A H C, Lanzara A 2007 Nature Mater. 6 770
[23]	Yu H A, Kaneko Y, Yoshimura S, Otani S 1996 Appl. Phys. Lett. 68 547
[24]	Krishna K M, Umeno M, Nukaya Y, Soga T, Jimbo T 2000 Appl. Phys. Lett. 77 1472
[25]	Rusop M, Mominuzzaman S M, Soga T, Jimbo T, Umeno M 2006 Sol. Energy Mater. Sol. Cells 90 3205
[26]	Yap S S, Tou T Y 2008 Vacuum 82 1449
[27]	Taguchi M, Kawamoto K, Tsuge S, Baba T, Sakata H, Morizane M, Uchihashi K, Nakamura N, Kiyama S, Oota O 2000 Prog. Photovolt: Res. Appl. 8 503
[28]	Zhao L, Zhou C L, Li H L, Diao H W, Wang W J 2008 Acta Phys. Sin. 57 3212 (in Chinese) [赵雷、周春兰、李海玲、刁宏伟、王文静 2008 57 3212]
[29]	Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) [冯倩、郝跃、岳远征2008 57 1886]
[30]	Ech-chamikh E, Essafti A, Azizan M, Ijdiyaou Y 2006 Sol. Energy Mater. Sol. Cells 90 1424
[31]	Veerasamy V S, Amartunga G A J, Park J S, Mackenzie H S, Milne W L 1995 IEEE Trans. Electr. Dev. 42 577
[32]	Sugiura M, Uragou K, Noda M, Tachiki M, Kobayashi T 1999 Jpn. J. Appl. Phys. 38 2675
[33]	Terlinden N M, Dingemans G, van de Sanden M C M, Kesselsa W M M 2010 Appl. Phys. Lett. 96 112101
[34]	Agostinelli G, Delabie A, Vitanov P, Alexieva Z, Dekkers H F W, De Wolf S, Beaucarne G 2006 Sol. Energy Mater. Sol. Cells

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