Photovoltaic effect and photo-assisted diode behavior in Pt/BiFeO<sub>3</sub>/Nb-doped SrTiO<sub>3</sub> heterojunction

Liu Chuan-Chuan; Hao Fei-Xiang; Yin Yue-Wei; Li Xiao-Guang

doi:10.7498/aps.69.20200280

Abstract

The photovoltaic effect of ferroelectric BiFeO₃ (BFO)-based heterojunction has been one of hot subjects of theoretical and experimental studies due to its important application prospects, and the coexistence of varieties of photovoltaic effect mechanisms (bulk photovoltaic effect, domain wall effect, interfacial barrier effect, etc.) can bright rich and complicated physics nature. In order to investigate the important role that the interface plays in the photovoltaic effect, we prepare the Pt/BFO(60 nm)/Nb:SrTiO₃ (NSTO) heterojunction with an asymmetric metal/ferroelectric/semiconductor structure, and systematically investigate the photovoltaic effect under laser irradiation with different wavelengths (365 nm and 445 nm). The heterojunction exhibits much stronger open-circuit voltage (V_oc, ～0.55 V at 74 mW/cm²) and short-circuit current density (J_sc, ～ 208 μA/cm² at 74 mW/cm²) for the laser irradiation with 365 nm wavelength than those for the laser irradiation with 445 nm wavelength, and the V_oc and J_sc are both strengthened with the increase of light intensity. This is because the 365 nm light with the photon energy ～3.4 eV can stimulate photon-induced carriers in both BFO (band gap ～2.7 eV) and NSTO (band gap ～3.2 eV) at both the Pt/BFO interface and the BFO/NSTO interface, while the 445 nm light with the photon energy ～2.8 eV can only generate carriers in BFO. Thus the photovoltaic voltage is much bigger for the 365 nm light. Furthermore, the laser absorption process is much more efficient for the 365 nm light (79% absorbed in BFO and 21% absorbed in NSTO) than for the 445 nm light (21% absorbed in BFO). In addition, the temperature dependent V_oc and J_sc are also investigated. It is found that for the 365 nm and 445 nm laser irradiation, the V_oc increases with temperature decreasing, which is possibly due to the variations of the built-in potential, concentration of thermal charge carriers, and/or electron-phonon scatterings. The sharper variation of V_oc above ～ 200 K may suggest the more significant role of thermal charge carriers at high temperatures. Interestingly, the temperature dependent J_sc behaves differently for the 365 nm and 445 nm light. Under the 365 nm laser irradiation, the J_sc remains almost unchanged below 170 K and increases sharply with temperature increasing above 170 K, which may be related to the dominant role of thermal excitation for the 365 nm light. While for the 445 nm light, the J_sc decreases with temperature increasing, which follows the variation trend of its V_oc. What is more, the conduction mechanism of Pt/BFO/NSTO heterojunction under laser irradiation is also studied. It is found that the conduction for the 445 nm light can be nicely described by the space-charge-limited bulk conduction (SCLC) model and the photon-generated carriers may fill the traps and thus leading the transition voltage to decrease. While for the 365 nm light, the conduction is more complicated and cannot be described by the SCLC model. Our findings may be helpful in understanding the photovoltaic effect in transition-metal oxide based heterojunctions and designing photovoltaic devices.

Keywords:

Authors and contacts

CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, China

Corresponding author: Yin Yue-Wei, yyw@ustc.edu.cn

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References

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Cited By

图 1 Pt/BFO/NSTO异质结　(a)样品结构示意图; (b)能带结构示意图

Figure 1. Pt/BFO/NSTO heterojunction: (a) Schematic illustration; (b) energy band structure diagram.

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图 2 (a) BFO/NSTO异质结的XRD测试结果; (b)在2 kHz下测量BFO (200 nm)薄膜的P-E铁电回滞曲线

Figure 2. (a) XRD pattern of BFO/NSTO heterojunction; (b) P-E hysteresis loop of BFO (200 nm) film measured under 2 kHz.

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图 3 室温下, 黑暗及不同光强的光照射下Pt/BFO(60 nm)/NSTO异质结的J-V曲线　(a)波长365 nm光照下的结果; (b)波长445 nm光照下的结果, 插图为低电压区域的放大图像

Figure 3. J-V curves of Pt/BFO(60 nm)/NSTO heterojunction in the dark and under the laser irradiation with various irradiation intensities at room temperature: (a) λ ～ 365 nm; (b) λ ～ 445 nm. The inset of panel (b) shows the magnified image at low voltages.

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图 4 不同波长光照下的(a)开路电压和(b)短路电流密度随着光照强度的变化

Figure 4. Light intensity dependent (a) open-circuit voltage and (b) short-circuit current density under laser irradiation with different wavelengths.

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图 5 (a), (c)不同温度下Pt/BFO/NSTO异质结的J-V曲线; (b), (d)开路电压和短路电流密度随温度的变化; (a), (b) λ ～ 365 nm, 74 mW/cm²; (c), (d) λ ～ 445 nm, 1.56 W/cm²

Figure 5. (a), (c) Temperature dependent J-V curves of Pt/BFO/NSTO heterojunction under laser irradiation; (b), (d) corresponding temperature dependent open-circuit voltage and short-circuit current density. In (a) and (b), λ ～ 365 nm, 74 mW/cm²; in (c) and (d), λ ～ 445 nm, 1.56 W/cm².

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图 6 J_sc随1000/T的变化及Arrhenius公式拟合

Figure 6. J_sc vs. 1000/T and the fitting result by Arrhenius model.

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图 7 肖特基势垒高度和理想因子随温度的变化　(a) λ ～ 365 nm, 74 mW/cm²; (b) λ ～ 445 nm, 1.56 W/cm²

Figure 7. Temperature dependent Schottky barrier height and ideal factor: (a) λ ～ 365 nm, 74 mW/cm²; (b) λ ～ 445 nm, 1.56 W/cm².

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图 8 (a)在445 nm光照和不加光时Pt/BFO/NSTO异质结的J-V曲线, 黑色实线是根据SCLC模型拟合的结果; (b) V_tran和${V'_{{\rm{tran}}}}$随光强的变化关系

Figure 8. (a) J-V curves of Pt/BFO/NSTO heterojunction in the dark and under the laser irradiation with different irradiation intensities for 445 nm wavelength. The black solid lines are fitting results by SCLC model. (b) Light intensity dependent V_tran and ${V'_{{\rm{tran}}}}$.

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map

[1]	Tan Z W, Hong L Q, Fan Z, Tian J J, Zhang L Y, Jiang Y, Hou Z P, Chen D Y, Qin M H, Zeng M, Gao J W, Lu X B, Zhou G F, Gao X S, Liu J M 2019 NPG Asia Mater. 11 20 Google Scholar
[2]	Nechache R, Harnagea C, Li S, Cardenas L, Huang W, Chakrabartty J, Rosei F 2014 Nat. Photonics 9 61 Google Scholar
[3]	Grinberg I, West D V, Torres M, Gou G Y, Stein D M, Wu L Y, Chen G N, Gallo E M, Akbashev A R, Davies P K, Spanier J E, Rappe A M 2013 Nature 503 509 Google Scholar
[4]	Chakrabartty J, Harnagea C, Celikin M, Rosei F, Nechache R 2018 Nat. Photonics 12 271 Google Scholar
[5]	Wang J, Ma J, Yang Y B, Chen M F, Zhang J X, Ma J, Nan C W 2019 ACS Appl. Electron. Mater. 1 862 Google Scholar
[6]	Li J K, Ge C, Jin K J, Du J Y, Yang J T, Lu H B, Yang G Z 2017 Appl. Phys. Lett. 110 142901 Google Scholar
[7]	Wang X D, Wang P, Wang J L, Hu W D, Zhou X H, Guo N, Huang H, Sun S, Shen H, Lin T, Tang M H, Liao L, Jiang A Q, Sun J L, Meng X J, Chen X S, Lu W, Chu J H 2015 Adv. Mater. 27 6575 Google Scholar
[8]	Wang P, Wang Y, Ye L, Wu M Z, Xie R Z, Wang X D, Chen X S, Fan Z Y, Wang J L, Hu W D 2018 Small 14 e1800492 Google Scholar
[9]	Guo R, You L, Zhou Y, Shiuh L Z, Zou X, Chen L, Ramesh R, Wang J L 2013 Nat. Commun. 4 1990 Google Scholar
[10]	Wei M C, Liu M F, Yang L, Xie B, Li X, Wang X Z, Cheng X Y, Zhu Y D, Li Z J, Su Y L, Li M Y, Hu Z Q, Liu J M 2020 Ceram. Int. 46 5126 Google Scholar
[11]	Thakoor S 1992 Appl. Phys. Lett. 60 3319 Google Scholar
[12]	Liu C C, Sun H Y, Ma C, Chen Z W, Luo Z, Su T S, Yin Y W, Li X G 2020 IEEE Electron Device Lett. 41 42 Google Scholar
[13]	Liu Y K, Yao Y P, Dong S N, Yang S W, Li X G 2012 Phys. Rev. B 86 075113 Google Scholar
[14]	Fan Z, Yao K, Wang J 2014 Appl. Phys. Lett. 105 162903 Google Scholar
[15]	Basu S R, Martin L W, Chu Y H, Gajek M, Ramesh R, Rai R C, Xu X, Musfeldt J L 2008 Appl. Phys. Lett. 92 091905 Google Scholar
[16]	Chen B, Zheng X J, Yang M J, Zhou Y, Kundu S, Shi J, Zhu K, Priya S 2015 Nano Energy 13 582 Google Scholar
[17]	Zhao R D, Ma N, Qi J, Mishra Y K, Adelung R, Yang Y 2019 Adv. Electron. Mater. 5 1800791 Google Scholar
[18]	Yang T, Wei J, Guo Y, Lü Z, Xu Z, Cheng Z 2019 ACS Appl. Mater. Interfaces 11 23372 Google Scholar
[19]	You L, Zheng F, Fang L, Zhou Y, Tan L Z, Zhang Z Y, Ma G H, Schmidt D, Rusydi A, Wang L, Chang L, Rappe A M, Wang J L 2018 Sci. Adv. 4 eaat3438 Google Scholar
[20]	Yuan Y B, Xiao Z G, Yang B, Huang J S 2014 J. Mater. Chem. A 2 6027 Google Scholar
[21]	蔡田怡, 雎胜 2018 67 157801 Google Scholar Cai T Y, Ju S 2018 Acta Phys. Sin. 67 157801 Google Scholar
[22]	Zhang J J, Su X D, Shen M R, Dai Z H, Zhang L J, He X Y, Cheng W X, Cao M Y, Zou G F 2013 Sci. Rep. 3 2109 Google Scholar
[23]	Hu W J, Wang Z H, Yu W L, Wu T 2016 Nat. Commun. 7 10808 Google Scholar
[24]	Quattropani A, Makhort A S, Rastei M V, Versini G, Schmerber G, Barre S, Dinia A, Slaoui A, Rehspringer J L, Fix T, Colis S, Kundys B 2018 Nanoscale 10 13761 Google Scholar
[25]	Jin K X, Zhai Y X, Li H, Tian Y F, Luo B C, Wu T 2014 Solid State Commun. 199 39 Google Scholar
[26]	Qu T L, Zhao Y G, Xie D, Shi J P, Chen Q P, Ren T L 2011 Appl. Phys. Lett. 98 173507 Google Scholar
[27]	Feng L, Yang S W, Lin Y, Zhang D L, Huang W C, Zhao W B, Yin Y W, Dong S N, Li X G 2015 ACS Appl. Mater. Interfaces 7 26036 Google Scholar
[28]	Huang W C, Liu Y K, Luo Z, Hou C M, Zhao W B, Yin Y W, Li X G 2018 J. Phys. D: Appl. Phys. 51 234005 Google Scholar
[29]	Wang X J, Zhou Q, Li H, Hu C, Zhang L L, Zhang Y, Zhang Y H, Sui Y, Song B 2018 Appl. Phys. Lett. 112 122103 Google Scholar
[30]	Yang M M, Zhao X Q, Wang J, Zhu Q X, Zhang J X, Li X M, Luo H S, Li X G, Zheng R K 2014 Appl. Phys. Lett. 104 052902 Google Scholar
[31]	Biegalski M D, Dörr K, Kim D H, Christen H M 2010 Appl. Phys. Lett. 96 151905 Google Scholar
[32]	Lord K, Hunter D, Williams T M, Pradhan A K 2006 Appl. Phys. Lett. 89 052116 Google Scholar
[33]	Dong H F, Wu Z G, Wang S Y, Duan W H, Li J B 2013 Appl. Phys. Lett. 102 072905 Google Scholar
[34]	Sze S M, Ng K K 2006 Physics of Semiconductor Devices (3rd Ed.) (Hoboken: John Wiley & Sons Inc) p53
[35]	曹汝楠, 徐飞, 朱佳斌, 葛升, 王文贞, 徐海涛, 徐闰, 吴杨琳, 马忠权, 洪峰, 蒋最敏 2016 65 188801 Google Scholar Cao R N, Xu F, Zhu J B, Ge S, Wang W Z, Xu H T, Xu R, Wu Y L, Ma Z Q, Hong F, Jiang Z M 2016 Acta Phys. Sin. 65 188801 Google Scholar
[36]	Riedel I, Parisi J, Dyakonov V, Lutsen L, Vanderzande D, Hummelen J C 2004 Adv. Funct. Mater. 14 38 Google Scholar
[37]	Kemerink M, Kramer J M, Gommans H H P, Janssen R A J 2006 Appl. Phys. Lett. 88 192108 Google Scholar
[38]	Snaith H J, Mende S L, Grätzel M, Chiesa M 2006 Phys. Rev. B 74 045306 Google Scholar
[39]	Elumalai N K, Uddin A 2016 Energy Environ. Sci. 9 391 Google Scholar
[40]	Katz E A, Faiman D, Tuladhar S M, Kroon J M, Wienk M M, Fromherz T, Padinger F, Brabec C J, Sariciftci N S 2001 J. Appl. Phys. 90 5343 Google Scholar
[41]	Sun J R, Shen B G, Sheng Z G, Sun Y P 2004 Appl. Phys. Lett. 85 3375 Google Scholar
[42]	Hao F X, Zhang C, Liu X, Yin Y W, Sun Y Z, Li X G 2016 Appl. Phys. Lett. 109 131104 Google Scholar
[43]	刘恩科, 朱秉升, 罗晋生 2008 半导体物理学(第7版) (北京: 电子工业出版社) 第183页 Liu E K, Zhu B S, Luo J S 2008 The Physics of Semiconductors (7th Ed.) (Beijing: Publishing House of Electronics Industry) p183 (in Chinese)
[44]	Shen J X, Qian H Q, Wang G F, An Y H, Li P G, Zhang Y, Wang S L, Chen B Y, Tang W H 2013 Appl. Phys. A 111 303 Google Scholar
[45]	Menzinger M, Wolfgang R 1969 Angew. Chem., Int. Ed. Engl. 8 438 Google Scholar
[46]	Schuller S, Schilinsky P, Hauch J, Brabec C J 2004 Appl. Phys. A 79 37 Google Scholar
[47]	Zhang L M, Ye X F, Boloor M, Poletayev A, Melosh N A, Chueh W C 2016 Energy Environ. Sci. 9 2044 Google Scholar
[48]	Steiner M A, Geisz J F, Friedman D J, Olavarria W J, Duda A, Moriarty T E 2011 37th IEEE Photovoltaic Specialists Conference (PVSC) Seattle, WA, USA, June 19–24, 2011 p002527
[49]	Krawczyk S K, Jakubowski A, Żurawska M 1981 Sol. Cells 4 187 Google Scholar
[50]	Kabulov R R, Matchanov N A, Umarov B R 2018 Appl. Sol. Energy 53 297 Google Scholar
[51]	Wu C Y, Chen J F 1982 J. Appl. Phys. 53 3852 Google Scholar
[52]	Mihailetchi V D, Koster L J A, Hummelen J C, Blom P W M 2004 Phys. Rev. Lett. 93 216601 Google Scholar
[53]	Lee D, Baek S H, Kim T H, Yoon J G, Folkman C M, Eom C B, Noh T W 2011 Phys. Rev. B 84 125305 Google Scholar
[54]	Janardhanam V, Lee H K, Shim K H, Hong H B, Lee S H, Ahn K S, Choi C J 2010 J. Alloys Compd. 504 146 Google Scholar
[55]	Chang S T, Lee J Y M 2002 Appl. Phys. Lett. 80 655 Google Scholar
[56]	Nana R, Gnanachchelvi P, Awaah M A, Gowda M H, Kamto A M, Wang Y, Park M, Das K 2010 Phys. Status Solidi A 207 1489 Google Scholar
[57]	Guo Y P, Guo B, Dong W, Li H, Liu H Z 2013 Nanotechnology 24 275201 Google Scholar
[58]	Choi T, Lee S, Choi Y J, Kiryukhin V, Cheong S W 2009 Science 324 63 Google Scholar

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Vol. 69, Issue 12 - 2020-06-20

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Photovoltaic effect and photo-assisted diode behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterojunction

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Corresponding author: Yin Yue-Wei, yyw@ustc.edu.cn

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Photovoltaic effect and photo-assisted diode behavior in Pt/BiFeO3/Nb-doped SrTiO3 heterojunction

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Corresponding author: Yin Yue-Wei, yyw@ustc.edu.cn

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Photovoltaic effect and photo-assisted diode behavior in Pt/BiFeO₃/Nb-doped SrTiO₃ heterojunction