Design and optimization of passivation layers and emitter layers in silicon heterojunction solar cells

Zhang Bo-Yu; Zhou Jia-Kai; Ren Cheng-Chao; Su Xiang-Lin; Ren Hui-Zhi; Zhao Ying; Zhang Xiao-Dan; Hou Guo-Fu

doi:10.7498/aps.70.20210674

Abstract

Silicon heterojunction (SHJ) solar cells have attracted much attention in the international photovoltaic market due to their high efficiencies and low costs. The quality of amorphous silicon/crystalline silicon (a-Si:H/c-Si) interfaces of SHJ solar cells has a key influence on the device performance. Therefore, the carrier recombination rate of a-Si:H/c-Si interface needs to be effectively controlled. In addition, as the important component of SHJ solar cells, the p-type emitter must meet the requirements for high conductivity, high light transmittance, and energy band matching with c-Si. The research contents and the relevant achievements of this paper include the following aspects. Firstly, in order to reduce the surface defects and realize the energy band alignment of a-Si:H/c-Si interface, the effect of passivation layer on passivation effect is studied. An ultra-thin buffer layer deposited by a low power and a high hydrogen dilution ratio is inserted between the conventional passivation layer and c-Si to improve the passivation effect and broaden the process window of passivation layer. The effects of the buffer layer thickness and hydrogen dilution ratio on passivation quality are further studied, and the best experimental conditions of buffer layer are obtained. The experimental results show that the sample with double-layered passivation layer is more stable than the conventional passivation layer. The minority carrier lifetime of the sample with single conventional passivation layer is 3.8 ms and the iV_OC is 712 mV, while the minority carrier lifetime of the sample with double-layered passivation layer is 4.197 ms and the iV_OC is 726 mV.Secondly, for the p-type emitters of silicon heterojunction solar cells, the effects of doping level on the photoelectric properties of p-type hydrogenated nanocrystalline silicon (nc-Si:H) thin films are studied. On this basis, the p⁺⁺-nc-Si:H/p-nc-Si:H double-layer emitter with wide band gap and high conductivity is designed and fabricated. By analyzing the optical and electrical properties of different emitters, it is found that p-nc-Si:H has good electrical and optical properties. Owing to the high doping efficiency of nc-Si, a small amount of doping can obtain high conductivity. Lightly doped p-nc-Si:H provides a better contact with the passivation layer, while heavily doped p⁺⁺-nc-Si:H can not only provide enough built-in electric field, but also improve the contact characteristics of p/ITO, thus enhancing the output characteristics of the cell. At the same time, the deposition of p-nc-Si:H layer with high hydrogen dilution ratio can also implement the hydrogen plasma treatment on the passivation layer, the reduction of the dangling bonds on the surface of the c-Si, the enhancement of the chemical passivation effect, and thus improving the open circuit voltage of the cell. Finally, a silicon heterojunction solar cell with an efficiency of 20.96% is obtained based on the commercial czochralski silicon wafer, with an open circuit voltage of 710 mV, a short circuit current density of 39.88 mA/cm² and filling factor of 74.02%.

Keywords:

Authors and contacts

1.
Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China
2.
Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
3.
Engineering Center of Thin Film Photoelectronic Technology of Ministry of Education, Tianjin 300350, China
4.
Sino-Euro Joint Research Center for Photovoltaic Power Generation of Tianjin, Tianjin 300350, China

Corresponding author: Hou Guo-Fu, gfhou@nankai.edu.cn

Funds: Project supported by the National Key R&D Program of China (Grant No. 2018YFB1500402) and the National Natural Science Foundation of China (Grant No. 62074084)

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References

[1]	李志学, 吴硕锋, 雷理钊 2018 价格月刊 12 1 Google Scholar Li Z X, Wu S F, Lei L Z 2018 Prices Monthly 12 1 Google Scholar
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[32]	Masuko K, Shigematsu M, Hashiguchi T, Fujishima D, Kai M, Yoshimura N, Yamaguchi T, Ichihashi Y, Mishima T, Matsubara N, Yamanishi T, Takahama T, Taguchi M, Maruyama E, Okamoto S 2014 IEEE J. Photovoltaics 4 1433 Google Scholar
[33]	Hao L C, Zhang M, Ni M, Shen X L, Feng X D 2019 J. Electron. Mater. 48 4688 Google Scholar

Cited By

图 1 (a)含双层钝化层的SHJ电池示意图; (b)含双层发射极的SHJ电池示意图

Figure 1. (a) Schematic diagram of the SHJ solar cell with the double passivation layer; (b) schematic diagram of the SHJ solar cell with the double emitting layer.

DownLoad: Full-Size Img PowerPoint

图 2 不同氢稀释比的单层钝化层的少子寿命和iV_OC的变化趋势

Figure 2. Minority carrier lifetime and variation trend of iV_OC in single passivation layer with different hydrogen dilution ratio.

DownLoad: Full-Size Img PowerPoint

图 3 (a)常规钝化层的FTIR图; (b)缓冲层的FTIR图谱

Figure 3. FTIR spectra of (a) conventional passivation layers and (b) buffer passivation layers.

DownLoad: Full-Size Img PowerPoint

图 4 不同厚度缓冲层的少子寿命和iV_OC的变化趋势

Figure 4. Minority carrier lifetime and iV_OC of samples with different thicknesses of buffer layer.

DownLoad: Full-Size Img PowerPoint

图 5 不同氢稀释比的双层钝化层的少子寿命与iV_OC的变化趋势

Figure 5. Minority carrier lifetimes and iV_OC of samples of double passivation layer for different hydrogen dilution ratio.

DownLoad: Full-Size Img PowerPoint

图 6 双层钝化层与单层钝化层的少子寿命箱线图

Figure 6. Minority carrier lifetimes of samples with double passivation layers or single passivation layers.

DownLoad: Full-Size Img PowerPoint

图 7 不同掺杂量的p型掺杂层的载流子浓度、电导率以及激活能

Figure 7. Carrier density, conductivity and activation energy of p-type layers with different TMB flow rate.

DownLoad: Full-Size Img PowerPoint

图 8 不同掺杂量的p型掺杂层的Raman图谱

Figure 8. Raman spectra of p-type layers with different TMB flow rate.

DownLoad: Full-Size Img PowerPoint

图 9 SHJ电池性能参数随p型掺杂层的掺杂量的变化　(a) V_OC; (b) FF; (c) J_sc; (d) Eff

Figure 9. J -V parameters of SHJ solar cells with different TMB flow rates in p-type layers: (a) V_OC; (b) FF; (c) J_sc; (d) Eff.

DownLoad: Full-Size Img PowerPoint

图 10 两种不同材料的p型掺杂层的Raman图谱

Figure 10. Raman spectra of single-layer emitter and double-layer emitter.

DownLoad: Full-Size Img PowerPoint

图 11 不同p型发射极对应的SHJ电池　(a) J -V特性曲线; (b) EQE曲线

Figure 11. (a) J -V curves and (b) EQE curves of SHJ solar cells with different p-type emitters.

DownLoad: Full-Size Img PowerPoint

图 12 双层发射级SHJ电池与单层发射极SHJ电池的J -V参数箱线图

Figure 12. Illuminate J -V parameters of SHJ solar cells with double emitter layer and single layer emitter.

DownLoad: Full-Size Img PowerPoint

表 1 重掺杂层不同氢稀释比的电池具体参数

Table 1. J -V parameters of SHJ solar cells with different hydrogen dilution ratio in the p⁺⁺-nc-Si:H layer.

H₂∶SiH₄∶TMB J_SC/mA·cm^–2 V_OC/V FF/% Eff /%

120∶4∶4 38.7 0.709 66.57 18.26
160∶4∶4 38.91 0.710 69.08 19.08
200∶4∶4 39.15 0.709 70.84 19.66
240∶4∶4 38.4 0.708 65.56 17.8

DownLoad: CSV

表 2 重掺杂层不同掺杂量的电池具体参数

Table 2. J -V parameters of SHJ solar cells with different TMB flow rate in the p⁺⁺-nc-Si:H layer.

H₂∶SiH₄∶TMB J_SC/mA·cm^–2 V_OC/V FF/% Eff/%

200∶4∶4 39.15 0.709 70.84 19.66
200∶4∶4.8 39.37 0.708 71.86 20.03
200∶4∶5.6 38.79 0.709 69.71 19.17
200∶4∶6.4 38.7 0.710 63.20 17.3

DownLoad: CSV

map

[1]	李志学, 吴硕锋, 雷理钊 2018 价格月刊 12 1 Google Scholar Li Z X, Wu S F, Lei L Z 2018 Prices Monthly 12 1 Google Scholar
[2]	陈晨, 张巍, 贾锐, 张代生, 邢钊, 金智, 刘新宇 2013 中国科学 43 708 Google Scholar Chen C, Zhang W, Jia R, Zhang D S, Xing Z, Jin Z, Liu X Y 2013 Science China 43 708 Google Scholar
[3]	Rehman A U, Lee S H 2013 Sci. World J. 11 470347 Google Scholar
[4]	Yoshikawa K, Yoshida W, Irie T, Kawasaki H, Konishi K, Ishibashi H, Asatani T, Adachi D, Kanematsu M, Uzu H, Yamamoto K 2017 Sol. Energy Mater. Sol. Cells 173 37 Google Scholar
[5]	Taguchi M, Yano A, Tohoda S, Matsuyama K, Nakamura Y, Nishiwaki T, Fujita K, Maruyama E 2014 IEEE J. Photovoltaics 4 96 Google Scholar
[6]	Okuda K, Okamoto H, Hamakawa Y 1983 Jpn. J. Appl. Phys. 22 L605 Google Scholar
[7]	Neumuller A, Sergeev O, Heise S J, Bereznev S, Volobujeva O, Salas J F L, Vehse M, Agert C 2018 Nano Energy 43 228 Google Scholar
[8]	Geissbuhler J, De Wolf S, Demaurex B, Seif J P, Alexander D T L, Barraud L, Ballif C 2013 Appl. Phys. Lett. 102 23 Google Scholar
[9]	Mews M, Schulze T F, Mingirulli N, Korte L 2013 Appl. Phys. Lett. 102 122106 Google Scholar
[10]	Paviet-Salomon B, Tomasi A, Descoeudres A, Barraud L, Nicolay S, Despeisse M, Wolf S D, Ballif C 2015 IEEE J. Photovoltaics 5 1293 Google Scholar
[11]	Ru X, Qu M, Wang J, Ruan T, Yang M, Peng F, Long W, Zheng K, Yan H, Xu X 2020 Sol. Energy Mater. Sol. Cells 215 110643 Google Scholar
[12]	Wu Z, Zhang L, Chen R, Liu W, Li Z, Meng F, Liu Z 2019 Appl. Surf. Sci. 475 504 Google Scholar
[13]	Korte L, Conrad E, Angermann H, Stangl R, Schmidt M 2009 Sol. Energy Mater. Sol. Cells 93 905 Google Scholar
[14]	Ling Z P, Ge J, Mueller T, Wong J, Aberle A G 2012 Energy Procedia 15 118 Google Scholar
[15]	Pysch D, Meinhard C, Harder N P, Hermle M, Glunz S W 2011 J. Appl. Phys. 110 094516 Google Scholar
[16]	Lee Y, Kim H, Iftiquar S M, Kim S, Kim S, Ahn S, Lee Y J, Dao V A, Yi J 2014 J. Appl. Phys. 116 244506 Google Scholar
[17]	Boccard M, Monnard R, Antognini L, Ballif C 2018 AIP Conf. Proc. 1999 040003
[18]	Richter A, Smirnov V, Lambertz A, Nomoto K, Welter K, Ding K N 2018 Sol. Energy Mater. Sol. Cells 174 196 Google Scholar
[19]	Li Z, Zhang L, Wu Z, Liu W, Chen R, Meng F, Liu Z 2020 J. Appl. Phys. 128 045309 Google Scholar
[20]	Ding K N, Aeberhard U, Finger F, Rau U 2012 Phys. Status Solidi R 6 193 Google Scholar
[21]	Mazzarella L, Kirner S, Gabriel O, Schmidt S S, Korte L, Stannowski B, Rech B, Schlatmann R 2017 Phys. Atatus Solidi A 214 1532958 Google Scholar
[22]	Descoeudres A, Barraud L, De Wolf S, Strahm B, Lachenal D, Guérin C, Holman Z C, Zicarelli F, Demaurex B, Seif J, Holovsky J, Ballif C 2011 Appl. Phys. Lett. 99 123506 Google Scholar
[23]	Fujiwara H, Kaneko T, Kondo M 2007 Appl. Phys. Lett. 91 133508 Google Scholar
[24]	De Wolf S, Beaucarne G 2006 Appl. Phys. Lett. 88 022104 Google Scholar
[25]	De Wolf S, Kondo M 2007 Appl. Phys. Lett. 91 112109 Google Scholar
[26]	Mazzarella L, Kirner S, Stannowski B, Korte L, Rech B, Schlatmann R 2015 Appl. Phys. Lett. 106 023902 Google Scholar
[27]	张晓丹, 赵颖, 高艳涛, 陈飞, 朱锋, 魏长春, 孙建, 耿新华 2006 55 6697 Google Scholar Zhang X D, Zhao Y, Gao Y T, Chen F, Zhu F, Wei C C, Sun J, Geng X H 2006 Acta Phys. Sin. 55 6697 Google Scholar
[28]	Mews M, Liebhaber M, Rech B, Korte L 2015 Appl. Phys. Lett. 107 013902 Google Scholar
[29]	Kanevce A, Metzger W K 2009 J. Appl. Phys. 105 094507 Google Scholar
[30]	Madani Ghahfarokhi O, von Maydell K, Agert C 2014 Appl. Phys. Lett. 104 113901 Google Scholar
[31]	Mishima T, Taguchi M, Sakata H, Maruyama E 2011 Sol. Energy Mater. Sol. Cells 95 18 Google Scholar
[32]	Masuko K, Shigematsu M, Hashiguchi T, Fujishima D, Kai M, Yoshimura N, Yamaguchi T, Ichihashi Y, Mishima T, Matsubara N, Yamanishi T, Takahama T, Taguchi M, Maruyama E, Okamoto S 2014 IEEE J. Photovoltaics 4 1433 Google Scholar
[33]	Hao L C, Zhang M, Ni M, Shen X L, Feng X D 2019 J. Electron. Mater. 48 4688 Google Scholar

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