-Si：H/SiNx叠层薄膜对晶体硅太阳电池的钝化

郑雪; 余学功; 杨德仁

doi:10.7498/aps.62.198801

摘要

利用等离子增强化学气相沉积法在硅衬底上制备了 -Si:H/SiNx叠层薄膜用来钝化晶体硅太阳电池. 用有效少子寿命表征薄膜的钝化效果, 通过模拟高频电容-电压测试结果分析薄膜钝化的机理. 将-Si:H/SiNx薄膜的钝化效果与使用相同方法制备的 -Si:H薄膜进行对比, 发现 -Si:H/SiNx 薄膜的钝化效果明显优于 -Si:H薄膜. 不同温度下热处理后, -Si:H/SiNx薄膜的钝化效果随着温度的上升先提高后降低. 在最佳热处理温度300 ℃下进行热处理, -Si:H/SiNx 薄膜的钝化效果能在90 min内始终保持优于 -Si:H薄膜. 模拟计算结果表明, -Si:H/SiNx薄膜的钝化效果与 -Si:H/Si界面处的态密度有关.

关键词:

Abstract

The -Si:H/SiNx stack-layer films are piepared by plasm-enhanced chemical vapor deposition to passivate crystalline silicon solar cells. Effective lifetime of minority carrier is used to characterize their passivation property and the passivation mechanism is analyzed by simulating the high-frequency capacitance-voltage curves. It is found that compared to -Si:H films prepared by the same method, -Si:H/SiNx films show better passivation property. Through thermal treatment at different temperatures, the passivation property of -Si:H/SiNx films is improved to the best at 300 ℃ first, and then degraded with rising temperature. Annealing at 300 ℃ can make -Si:H/SiNx films show a better passivation property than -Si:H films in 90 min. Simulation results indicate that the passivation property of -Si:H/SiNx films is mainly determined by the state density at the -Si:H/Si interface.

Keywords:

作者及机构信息

1.
浙江大学, 硅材料国家重点实验室, 杭州 310027

基金项目: 国家科技支撑计划(批准号:2011BAE03B13)和浙江省创新团队项目(批准号:2009R50005)资助的课题.

Authors and contacts

1.
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Funds: Project supported by the National Key Technology Research and Development Program of the Ministry of Science and Technology of China (Grant No. 2011BAE03B13), and the Innovation Team Project of Zhejiang Province, China (Grant No. 2009R50005).

参考文献

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施引文献

[1]	Burrows M Z, Das U K, Opila R L, De Wolf S, Birkmire R W 2008 J. Vac. Sci. Technol. A 26 683
[2]	De Wolf S, Kondo M 2007 Appl. Phys. Lett. 90 042111
[3]	Lauinger T, Schmidt J, Aberle A G, Hezel R 1996 Appl. Phys. Lett. 68 1232
[4]	Schmidt J, Moschner J D, Henze J, Dauwe S, Hezel R 2004 Proceedings of the 19th European Photovoltaic Solar Energy Conference Paris, France Republic, June, 2004 p391
[5]	Altermatt P P, Plagwitz H, Bock R, Schmidt J, Brendel R, Kerr M J, Cuevas A 2006 Proceedings of the 21st European Photovoltaic Solar Energy Conference Dresden, Germany Republic, September, 2006 p647
[6]	Glunz S W, Grohe A, Hermle M, Hofmann M, Janz S, Roth T, Schultz O, Vetter M, Martin I, Ferré R, Bermejo S, Wolke W, Warta W, Preu R, Willeke G 2005 Proceedings of the 20th European Photovoltaic Solar Energy Conference Barcelona, Spain Republic, June, 2005 p572
[7]	Dauwe S, Schmidt J, Hezel R 2002 Proceedings of the 29th IEEE Photovoltaic Specialists Conference New Orleans, USA Republic, May, 2002 p1246
[8]	Kerr M J, Cuevas A 2002 Semicond. Sci. Technol. 17 35
[9]	Ulyashin A, Wright D N, Bentzen A, Suphellen A, Marstein E, Holt A 2007 Proceedings of the 22nd European Photovoltaic Solar Energy Conference Milano, Italy Republic, September, 2007 p1690
[10]	Plagwitz H 2007 Ph. D. Dissertation (Institut fr Solarenergieforschung Hameln: Leibniz Universität Hannover)
[11]	Plagwitz H, Takahashi Y, Terheiden B, Brendel R 2006 Proceedings of the 21st European Photovoltaic Solar Energy Conference Dresden, Germany Republic, September, 2006 p688
[12]	Bentzen A, Ulyashin A, Suphellen A, Sauar E, Grambole D, Wright D N, Marstein E S, Svensson B G, Holt A 2005 Proceedings of the 15th International Photovoltaic Science and Engineering Conference Shanghai, China Republic, October, 2005 p316
[13]	Gatz S, Plagwitz H, Altermatt P P, Terheiden B, Brendel R 2008 Appl. Phys. Lett. 93 173502
[14]	Lei D, Yu X G, Song L H, Gu X, Li G H, Yang D R 2011 Appl. Phys. Lett. 99 52103
[15]	Sze S M, Ng K K 2007 Physics of Semiconductor Devices (3rd ed) (Hoboken: Wiley) p200
[16]	Lanford W A, Rand M J 1978 J. Appl. Phys. 49 2473
[17]	Mitchell J, Macdonald D, Cuevas A 2009 Appl. Phys. Lett. 94 162102

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