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The -Si:H/SiNx stack-layer films are piepared by plasm-enhanced chemical vapor deposition to passivate crystalline silicon solar cells. Effective lifetime of minority carrier is used to characterize their passivation property and the passivation mechanism is analyzed by simulating the high-frequency capacitance-voltage curves. It is found that compared to -Si:H films prepared by the same method, -Si:H/SiNx films show better passivation property. Through thermal treatment at different temperatures, the passivation property of -Si:H/SiNx films is improved to the best at 300 ℃ first, and then degraded with rising temperature. Annealing at 300 ℃ can make -Si:H/SiNx films show a better passivation property than -Si:H films in 90 min. Simulation results indicate that the passivation property of -Si:H/SiNx films is mainly determined by the state density at the -Si:H/Si interface.
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Keywords:
- solar cells /
- passivation /
- -Si：H/SiNx films /
- thermal treatment
[1] Burrows M Z, Das U K, Opila R L, De Wolf S, Birkmire R W 2008 J. Vac. Sci. Technol. A 26 683
[2] De Wolf S, Kondo M 2007 Appl. Phys. Lett. 90 042111
[3] Lauinger T, Schmidt J, Aberle A G, Hezel R 1996 Appl. Phys. Lett. 68 1232
[4] Schmidt J, Moschner J D, Henze J, Dauwe S, Hezel R 2004 Proceedings of the 19th European Photovoltaic Solar Energy Conference Paris, France Republic, June, 2004 p391
[5] Altermatt P P, Plagwitz H, Bock R, Schmidt J, Brendel R, Kerr M J, Cuevas A 2006 Proceedings of the 21st European Photovoltaic Solar Energy Conference Dresden, Germany Republic, September, 2006 p647
[6] Glunz S W, Grohe A, Hermle M, Hofmann M, Janz S, Roth T, Schultz O, Vetter M, Martin I, Ferré R, Bermejo S, Wolke W, Warta W, Preu R, Willeke G 2005 Proceedings of the 20th European Photovoltaic Solar Energy Conference Barcelona, Spain Republic, June, 2005 p572
[7] Dauwe S, Schmidt J, Hezel R 2002 Proceedings of the 29th IEEE Photovoltaic Specialists Conference New Orleans, USA Republic, May, 2002 p1246
[8] Kerr M J, Cuevas A 2002 Semicond. Sci. Technol. 17 35
[9] Ulyashin A, Wright D N, Bentzen A, Suphellen A, Marstein E, Holt A 2007 Proceedings of the 22nd European Photovoltaic Solar Energy Conference Milano, Italy Republic, September, 2007 p1690
[10] Plagwitz H 2007 Ph. D. Dissertation (Institut fr Solarenergieforschung Hameln: Leibniz Universität Hannover)
[11] Plagwitz H, Takahashi Y, Terheiden B, Brendel R 2006 Proceedings of the 21st European Photovoltaic Solar Energy Conference Dresden, Germany Republic, September, 2006 p688
[12] Bentzen A, Ulyashin A, Suphellen A, Sauar E, Grambole D, Wright D N, Marstein E S, Svensson B G, Holt A 2005 Proceedings of the 15th International Photovoltaic Science and Engineering Conference Shanghai, China Republic, October, 2005 p316
[13] Gatz S, Plagwitz H, Altermatt P P, Terheiden B, Brendel R 2008 Appl. Phys. Lett. 93 173502
[14] Lei D, Yu X G, Song L H, Gu X, Li G H, Yang D R 2011 Appl. Phys. Lett. 99 52103
[15] Sze S M, Ng K K 2007 Physics of Semiconductor Devices (3rd ed) (Hoboken: Wiley) p200
[16] Lanford W A, Rand M J 1978 J. Appl. Phys. 49 2473
[17] Mitchell J, Macdonald D, Cuevas A 2009 Appl. Phys. Lett. 94 162102
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[1] Burrows M Z, Das U K, Opila R L, De Wolf S, Birkmire R W 2008 J. Vac. Sci. Technol. A 26 683
[2] De Wolf S, Kondo M 2007 Appl. Phys. Lett. 90 042111
[3] Lauinger T, Schmidt J, Aberle A G, Hezel R 1996 Appl. Phys. Lett. 68 1232
[4] Schmidt J, Moschner J D, Henze J, Dauwe S, Hezel R 2004 Proceedings of the 19th European Photovoltaic Solar Energy Conference Paris, France Republic, June, 2004 p391
[5] Altermatt P P, Plagwitz H, Bock R, Schmidt J, Brendel R, Kerr M J, Cuevas A 2006 Proceedings of the 21st European Photovoltaic Solar Energy Conference Dresden, Germany Republic, September, 2006 p647
[6] Glunz S W, Grohe A, Hermle M, Hofmann M, Janz S, Roth T, Schultz O, Vetter M, Martin I, Ferré R, Bermejo S, Wolke W, Warta W, Preu R, Willeke G 2005 Proceedings of the 20th European Photovoltaic Solar Energy Conference Barcelona, Spain Republic, June, 2005 p572
[7] Dauwe S, Schmidt J, Hezel R 2002 Proceedings of the 29th IEEE Photovoltaic Specialists Conference New Orleans, USA Republic, May, 2002 p1246
[8] Kerr M J, Cuevas A 2002 Semicond. Sci. Technol. 17 35
[9] Ulyashin A, Wright D N, Bentzen A, Suphellen A, Marstein E, Holt A 2007 Proceedings of the 22nd European Photovoltaic Solar Energy Conference Milano, Italy Republic, September, 2007 p1690
[10] Plagwitz H 2007 Ph. D. Dissertation (Institut fr Solarenergieforschung Hameln: Leibniz Universität Hannover)
[11] Plagwitz H, Takahashi Y, Terheiden B, Brendel R 2006 Proceedings of the 21st European Photovoltaic Solar Energy Conference Dresden, Germany Republic, September, 2006 p688
[12] Bentzen A, Ulyashin A, Suphellen A, Sauar E, Grambole D, Wright D N, Marstein E S, Svensson B G, Holt A 2005 Proceedings of the 15th International Photovoltaic Science and Engineering Conference Shanghai, China Republic, October, 2005 p316
[13] Gatz S, Plagwitz H, Altermatt P P, Terheiden B, Brendel R 2008 Appl. Phys. Lett. 93 173502
[14] Lei D, Yu X G, Song L H, Gu X, Li G H, Yang D R 2011 Appl. Phys. Lett. 99 52103
[15] Sze S M, Ng K K 2007 Physics of Semiconductor Devices (3rd ed) (Hoboken: Wiley) p200
[16] Lanford W A, Rand M J 1978 J. Appl. Phys. 49 2473
[17] Mitchell J, Macdonald D, Cuevas A 2009 Appl. Phys. Lett. 94 162102
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