Ultrafast pulse lasers based on two-dimensional nanomaterial heterostructures as saturable absorber

Long Hui; Hu Jian-Wei; Wu Fu-Gen; Dong Hua-Feng

doi:10.7498/aps.69.20201235

Abstract

As the substance carrier of nonlinear optical phenomenon, saturable absorber is an essential material for generating the ultrafast pulse laser. The saturable absorbers based on graphene, transition metal sulfides, topological insulators, black phosphorus and other two-dimensional (2D) materials exhibit different optical advantages. However, limitations of those single 2D materials as saturable absorbers exist. The nanomaterial heterojunction structure can combine the advantages of different 2D materials to achieve optical complementarity, and it also provides new ideas for generating the ultrafast laser with ultrashort pulse duration and high peak power. Here in this paper, the preparation methods, band alignment and the electronic transition mechanism of heterojunction saturable absorbers are summarized, and the recent research progress of ultrafast lasers based on 2D nano-heterostructures are also reviewed, including the wavelength, pulse width, repetition frequency and pulse energy. Therefore, 2D nano-heterostructure exhibits great potential applications in future optical modulator and optical switch.

Keywords:

Authors and contacts

School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

Corresponding author: Dong Hua-Feng, hfdong@gdut.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 62005053), the One-Hundred Young Talents Program of Guangdong University of Technology, China (Grant No. 220413293), and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2020A1515011178, 2017B030306003)

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Cited By

图 1 二维异质结可饱和吸收体主要制备方法

Figure 1. Fabrication methods of two-dimensional heterostructure saturable absorbers.

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图 2 (a)机械剥离α-MoTe₂/MoS₂异质结示意图^[40]; (b)器件结构图^[40]

Figure 2. (a) Schematic of α-MoTe₂/MoS₂ heterostructure prepared by mechanical exfoliation^[40]; (b) the optical microscopy image^[40].

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图 3 (a) 液相超声剥离法制备WS₂/Graphene异质结流程图及不同掺杂含量对成膜厚度的影响; (b) 异质结原子力显微镜图; (c) X射线衍射图; (d)吸收强度随抽滤体积的变化; (e) WS₂, Graphene, 及WS₂/Graphene异质结Z-扫描结果; (f) WS₂, Graphene, 及WS₂/Graphene三阶非线性系数及FOM比较^[41]

Figure 3. (a) Illustration of preparation procedures of WS₂/Graphene heterostructure films by liquid phase exfoliation, a series of of WS₂/Graphene heterostructure films with different thickness obtained from different filtration volume; (b) atomic force microscopy image of WS₂/Graphene heterostructure films; (c) X-ray diffraction patterns; (d) absorption as a function of filtration volume at 800 nm; (e) open-aperture Z-scan results of WS₂, Graphene, and WS₂/Graphene heterostructure films with the thickness of ～135 nm; (f) histogram of the imaginary part of the third-order nonlinear coefficient Imχ⁽³⁾ and figure of merit (FOM) of WS₂, Graphene, and WS₂/Graphene heterostructure^[41].

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图 4 (a)液相超声剥离法制备MoTe₂/MoS₂异质结流程图及不同掺杂含量对成膜厚度的影响; (b) MoTe₂, MoS₂, 及MoTe₂/MoS₂的Z-扫描结果; (c)不同厚度的MoTe₂/MoS₂异质结薄膜Z-扫描结果^[47]

Figure 4. (a) Illustration of preparation procedures of MoTe₂/MoS₂ heterostructure films by liquid phase exfoliation; (b) Z-scan results of MoTe₂, MoS₂ and MoTe₂/MoS₂ heterostructure films under the pump intensity of 606 GW·cm^–2 with the thickness of ～80 nm; (c) Z-scan results of MoTe₂/MoS₂ heterostructure films with thickness of 30, 60, 80, 100, 120 nm at 606 GW·cm^–2, respectively^[47].

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图 5 (a), (b) CVD制备的单层MoS₂并转移到单层WS₂上组成MoS₂/WS₂异质结及其特征拉曼光谱^[53]; (c), (d)三角形的WS₂生长在MoS₂薄膜上, 及相应的PL光谱^[54]; (e), (f) Bi₂Te₃颗粒生长在石墨烯薄膜上形成Bi₂Te₃/Graphene异质结及吸收光谱^[55]

Figure 5. (a) Schematic and (b) Raman spectrum of MoS₂/WS₂ heterostructure^[53]; (c) optical microscope photograph of monolayer triangular WS₂ grown on monolayer MoS₂ nanosheet; (d) photoluminescence (PL) spectrum of WS₂ monolayer, MoS₂ monolayer and MoS₂/WS₂ heterostructure^[54]; (e) schematic diagram of as-grown Bi₂Te₃/Graphene heterostructure on SiO₂/Si substrate; (f) absorption spectrum of Graphene and Bi₂Te₃/Graphene heterostructure^[55].

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图 6 (a)−(c)两次CVD法合成Bi₂Se₃/Graphene AFM图和对应的厚度, 以及在900—2000 nm波段内吸收光谱^[56]; (d), (e) CVD转移法制备WS₂-Graphene异质结结构图及Z-扫描曲线^[32]

Figure 6. (a) AFM image of Bi₂Te₃/Graphene heterostructure fabricated by two-step CVD method on the SiO₂ substrate; (b) thickness profiles along line 1 in (a); (c) absorption spectrum of Bi₂Te₃/Graphene heterostructure from 900−2000 nm^[56]; (d) schematic of WS₂/ Graphene heterostructure after transferring successfully; (e) Z-scan graph of WS₂, Graphene and WS₂/Graphene heterostructure^[32]

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图 7 (a), (b) 磁控溅射得到的MoS₂-WS₂ 扫描电子显微镜正面图和剖面图; (c) Raman光谱; (d) 异质结的入射光强度和透过率之间的关系图^[57]

Figure 7. Scanning electron microscope images of MoS₂/WS₂ heterostructure from the top view (a) and side view (b); (c) Raman spectrum of MoS₂, WS₂ and MoS₂/WS₂ heterostructure; (d) transmission of MoS₂/WS₂ heterostructure with respect to the power intensity of incident light^[57].

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图 8 (a) MoS₂/WS₂异质结^[63]; (b) MoTe₂/MoS₂异质结^[47]; (c) MoS₂/Graphene异质结^[64]; (d) Bi₂Te₃/Graphene异质结能带及载流子迁移图^[55]

Figure 8. (a) Illustration of band alignment and carrier mobility of the type-II MoS₂/WS₂ heterostructure^[63]; (b) band alignment of semiconductor type-II MoTe₂/MoS₂ heterostructure^[47]; (c) diagram of the charge-transfer process in a MoS₂/graphene heterostructure^[64]; (d) energy band diagram of Bi₂Te₃/graphene heterojunction, the blue dots stand for the photogenerated electrons, while red hollow dots stand for holes^[55].

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图 9 Te/BP异质结锁模激光器的输出特性　(a), (b) 测得的404 fs的自相关图和相应的频谱; (c), (d) 分别记录宽距和窄距的频谱^[65]; MoS₂/Graphene异质结激光器 (e)原理设置和 (f) 结构的连续波(CW)和Q开关锁模(QML)的输出功率与抽运功率关系图^[34]

Figure 9. Recorded results of Te/BP heterojunction SAM-based mode-locked laser: (a), (b) measured autocorrelation trace of 404 fs and the corresponding spectrum; (c), (d) recorded frequency spectrum with a wide and a narrow span respectively^[65]; (e) schematic setup of the Q-switched mode-locking (QML) laser and (f) the output power versus pump power of the continuous wave (CW) and QML operation for MoS₂/Graphene heterostructure^[34]

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图 10 (a) 基于石墨烯/二硫化钼异质结锁模激光器装置图; (b) 锁模脉冲时域图; (c) 锁模光谱图; (d) 自相关曲线; (e) 频谱图^[66]

Figure 10. (a) Schematic of graphene/MoS₂ heterojunction mode-locked laser device; (b) pulse trains; (c) spectrum; (d) autocorrelation race for 92 fs duration; (e) frequency spectrum^[66].

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图 11 (a)−(c) Graphene/WS₂异质结的锁模性能((a)光谱、(b)脉冲序列、(c)自相关曲线)^[69]; (d)−(f) Graphene/Mo₂C异质结的锁模性能((d)光谱、(e)脉冲序列、(f)自相关曲线)^[70]; (g)−(i) Graphene/phosphorene异质结的锁模性能((g) 光谱、(h) 脉冲序列、(i) 自相关曲线)^[71]

Figure 11. (a)−(c) Mode-locking performance of Graphene/WS₂ heterostructure: (a) Optical spectrum; (b) pulse trains; (c) autocorrelation trace^[69]. (d)−(f) Mode-locking performance of Graphene/Mo₂C heterostructure: (d) Optical spectrum; (e) pulse trains; (f) autocorrelation trace^[70]. (g)−(i) Mode-locking performance of Graphene/phosphorene heterostructure: (g) Optical spectrum; (h) pulse trains; (i) autocorrelation trace^[71].

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图 12 (a) Graphene/Bi₂Te₃异质结在光纤耦合器端面的示意图; (b)−(d) Graphene/Bi₂Te₃异质结的锁模特性((b) 光谱、(c) 脉冲序列、(d) 自相关曲线)^[72]; (e) 掺饵光纤激光器示意图; (f)—(h) Graphene/Bi₂Te₃异质结的锁模特性((f) 光谱、(g) 脉冲序列、(h) 自相关曲线)^[73]; (i) 掺饵光纤激光器示意图; (j)−(l) Graphene/MoS₂异质结的锁模特性((j) 光谱、(k) 脉冲序列、(l) 自相关曲线)^[74]

Figure 12. (a) Schematic of Graphene/Bi₂Te₃ heterostructure on the end-facet of fiber connector; (b)−(d) Mode-locking characteristics of Graphene/Bi₂Te₃ heterostructure: (b) Optical spectrum; (c) pulse trains; (d) autocorrelation trace^[72]. (e) Schematic of Er-doped fiber laser. (f)−(h) Mode-locking characteristics of Bi₂Te₃/FeTe₂ heterostructure: (f) Optical spectrum; (g) pulse trains; (h) autocorrelation trace^[73]. (i) Schematic of Er-doped fiber laser. (j)−(l) Mode-locking characteristics of Graphene/MoS₂ heterostructure: (j) Optical spectrum; (k) pulse trains; (l) autocorrelation trace^[74].

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图 13 (a) InAs/GaAs QD异质结可饱和吸收镜在1550 nm锁模时所用的实验装置; 插图为量子点可饱和吸收体的截面透射电子显微镜图像和它的1 μm × 1 μm的AFM图像; (b)−(e)可饱和吸收体在1550 nm的锁模特性: (b) 输出功率与抽运功率的变化关系; (c) 输出光谱; (d) 锁模光纤激光器的RF光谱; (e) 自相关曲线^[75]

Figure 13. (a) Experimental setup of mode-locked fiber laser with 1550 nm QD-SESAM; Inset: cross-sectional transmission electron microscope image of the QD-SESAM and 1 μm × 1 μm AFM image of the 1550 nm QDs. (b)−(e) Characteristics of mode-locked the developed fiber laser of InAs/GaAs QD: (b) Output power versus pump power; (c) output optical spectra; (d) RF spectrum of the mode-locked fiber laser; (e) autocorrelation trace^[75].

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图 14 (a) 纤芯沉积样品示意图; (b)−(d)样品Te的锁模性能((b) 光谱、(c) 脉冲序列、(d) 自相关曲线); (e) 50 μm尺度下的样品显微照片; (f)—(h) 掺镱光纤激光器的自启动锁模性能((f) 光谱、(g) 脉冲序列、(h) 自相关曲线)^[76]

Figure 14. (a) Schematic of deposition of the Te/Se sample on the microfiber. (b)−(d) Mode locking performance of the Te-based fiber laser: (b) Optical spectrum; (c) pulse trains; (d) autocorrelation trace. (e) Te/Se samples under microscope with 50 μm scale. (f)−(h) Self-starting mode locking performance of the Yb-doped fiber laser: (f) Optical spectrum; (g) pulse trains; (h) autocorrelation trace^[76].

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图 15 (a)—(c) MoS₂/WS₂异质结锁模特性((a)光谱、(b)脉冲序列、(c)自相关曲线)^[57]; (d)−(f) MoS₂/Sb₂Te₃/MoS₂异质结锁模特性((d)光谱、(e)频谱、(f)自相关曲线)^[77]; (g)−(i) WS₂/MoS₂/WS₂异质结锁模特性((g)光谱、(h)频谱、(i)自相关曲线)^[63]

Figure 15. (a)−(c) Mode-locking performance of MoS₂/WS₂ heterostructure: (a) Optical spectrum; (b) pulse trains; (c) autocorrelation trace^[57]. (d)−(f) Mode-locking performance of MoS₂/Sb₂Te₃/MoS₂ heterostructure: (d) Optical spectrum; (e) pulse trains; (f) autocorrelation trace^[77]. (g)−(i) Mode-locking performance of WS₂/MoS₂/WS₂ heterostructure: (g) Optical spectrum; (h) RF spectrum; (i) autocorrelation trace^[63].

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表 1 基于异质结可饱和吸收体锁模激光器的性能总结

Table 1. Performance summary of mode-locked lasers based on two-dimensional heterostructure.

Material type	Type of Laser	Fabrication method	λ/nm	Pulse width	Repetition rate/MHz	Energy/nJ	Ref.
InAs/GaAs QDs	FL	MBE	1556.00	920.00 fs	8.16	—	[75]
GaN/InGaN	—	FIBE	408.00	1.40 ps	10.00		[78]
2D Te/BP	SL	LPE	1049.10	404.00 fs	42.10	6.9400	[65]
Te/Se	FL	HM	1500.00	889.00 fs	18.50	—	[76]
Te/Se	FL	HM	1000.00	11.70 ps	18.50	—	[76]
Graphene/MoS₂	SL	LPE	1061.56	306.00 ps	83.30	—	[34]
Graphene/MoS₂	SL	LPE	1063.00	92.00 fs	84.75	—	[66]
Graphene/MoS₂	SL	CVD	1037.20	236.00 fs	41.84	19.0000	[64]
Graphene/MoS₂	FL	CVD	1571.80	830.00 fs	11.93	—	[74]
Graphene/MoS₂	FL	LPE HM	1571.80	2.20 ps	3.47	—	[68]
Graphene/WS₂	FL	CVD	1593.50	55.60 ps	3.63	—	[79]
Graphene/WS₂	FL	CVD	1568.30	1.12 ps	8.83	0.5400	[69]
Graphene/WS₂	FL	LPE	1066.20	450.00 ps	19.68	0.1108	[80]
Graphene/Mo₂C	FL	CVD	1599.00	723.00 fs	15.33	0.7130	[70]
Graphene/BP	FL	LPE	1529.92	820.00 fs	7.43	—	[71]
Graphene/BP	FL	LPE	1531.00	148.00 fs	7.50	—	[71]
Graphene/Bi₂Te₃	FL	CVD	1565.60	1.80 ps	6.91	—	[56]
Graphene/Bi₂Te₃	FL	CVD	1049.10	144.30 ps	3.70	—	[56]
Graphene/Bi₂Te₃	FL	CVD	1568.07	837.00 fs	17.30	0.1780	[72]
Graphene/Bi₂Te₃	FL	CVD	1058.90	189.94 ps	79.13	—	[81]
Bi₂Te₃/FeTe₂	FL	SMD	1064.00	164.70 ps	15.02	—	[73]
Bi₂Te₃/FeTe₂	FL	SMD	1550.00	481.00 fs	23.00	—	[73]
MoS₂/graphene/WS₂	FL	CVD	1567.51	—	2.10	—	[82]
MoS₂/WS₂	FL	MSD	1560.00	154.00 fs	74.60	—	[57]
WS₂/MoS₂/WS₂	FL	MSD	1562.66	296.00 fs	36.46	—	[63]
MoS₂/Sb₂Te₃/MoS₂	FL	MSD	1554.00	286.00 fs	36.40	—	[77]
注: SL, solid-state laser; FL, fiber laser; MBE, molecular beam epitaxy; FIBE, focused ion beam etching; LPE, liquid phase exfoliation; HM, hydrothermal method; CVD, chemical vapour deposition; SMD, selective metal deposition; MSD, magnetron sputtering deposition; SASR, self-assembly solvothermal route.

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