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Silicon-based reconfigurable antenna, which is fabricated by heterogeneous and lateral surface PiN (SPiN), is an effective technology to achieve antenna miniaturization and enhance radar and wireless communication system performance. In this paper, the heterogeneous and lateral Si/Ge/Si SPiN diode is presented, that can weaken the band gap narrowing of the P + and N + region to improve the injection ratio of PN junction. And the electrical properties of the solid state plasma within the intrinsic region are also studied. Based on the bipolar diffusion model and Fletcher boundary condition, the analytic models of the junction voltage, the current density and the solid state plasma concentration distribution are established for a large injection current, and the numerical simulation has been carried out. Results show that the junction voltage increases linearly with the increase of applied voltage and the solid state plasma concentration at the boundary; and the current density increases exponentially with increasing junction voltage and the applied voltage, respectively. And the applied voltage and the current density of heterogeneous SPiN diode is lower than that of homogeneous SPiN diode under the same condition due to the difference of barrier heights between the heterojunction and homojunction. In addition, results also show that the value of the concentration decreases with increasing length of the intrinsic region; otherwise, it increases with increasing applied voltage and the doping concentration in the P+ and N+ regions. Under the same conditions, the solid state plasma concentration of the heterogeneous SPiN diode is nearly seven times that of homogeneous diode, which is in excellent agreement with the data published, giving the evidence for the validity of our method. The proposed models provide an effective reference for the design and application of silicon-based reconfigurable antennas.
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Keywords:
- SPiN /
- solid state plasma /
- large injection /
- heterojunction
[1] Lv L, Sun J D, Roger A L, Sun Y F, Wu D M, Cai Y, Qin H 2015 Chin. Phys. B 24 028504
[2] Yevhen Y, Marczewski J, Tomaszewski D 2010 IEEE Trans. on Microwave Theory and Techniques 58 1100
[3] Zhai Y C, Wu Q, Tan J J, Tao H, Gao F H, Zhu J H, Zhang Z Y, Du J L, Hou Y D 2015 Microelectron. Eng. 145 49
[4] Qiu H B, Wu L W 2015 Chin. Phys. B 24 010304
[5] Jackson R P, Mitchell S J N, Fusco V 2010 Solid-State Electronics 54 149
[6] Jayant B B 2008 Fundamentals of Power Semiconductor Devices (USA: North Carolina State University) p203
[7] Jiang Z Y, Xie H Y, Zhang L H, Zhang W R, Hu R Xin, Huo W J 2015 Chin. Phys. B 24 048504
[8] Yang H D, Kil Y H, Yang J H, Kang S, Jeong T S, Choi C J, Kim T S, Shim K H 2014 Mater. Sci. Semicond. Process. 22 37
[9] Fathy A E, Rosen A, Owen H S, McGinty F, Taylor G C, McGee D J, Perlow S M 2003 IEEE Trans. on Microwave Theory and Techniques 51 1650
[10] Zhang J X, He Z H, Guo H X, Tang D, Xiong C, Li P, Wang X 2014 Acta Phys. Sin. 63 248503 (in Chinese) [张晋新, 贺朝会, 郭红霞, 唐杜, 熊涔, 李培, 王信 2015 63 248503]
[11] Zheng L, Zhao Q, Liu S Z, Xing X J 2012 Acta Phys. Sin. 61 245202 (in Chinese) [郑灵, 赵青, 刘述章, 邢晓俊 2012 61 245202]
[12] Nusobaum A 1975 Solid-State Electronics 18 107
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[1] Lv L, Sun J D, Roger A L, Sun Y F, Wu D M, Cai Y, Qin H 2015 Chin. Phys. B 24 028504
[2] Yevhen Y, Marczewski J, Tomaszewski D 2010 IEEE Trans. on Microwave Theory and Techniques 58 1100
[3] Zhai Y C, Wu Q, Tan J J, Tao H, Gao F H, Zhu J H, Zhang Z Y, Du J L, Hou Y D 2015 Microelectron. Eng. 145 49
[4] Qiu H B, Wu L W 2015 Chin. Phys. B 24 010304
[5] Jackson R P, Mitchell S J N, Fusco V 2010 Solid-State Electronics 54 149
[6] Jayant B B 2008 Fundamentals of Power Semiconductor Devices (USA: North Carolina State University) p203
[7] Jiang Z Y, Xie H Y, Zhang L H, Zhang W R, Hu R Xin, Huo W J 2015 Chin. Phys. B 24 048504
[8] Yang H D, Kil Y H, Yang J H, Kang S, Jeong T S, Choi C J, Kim T S, Shim K H 2014 Mater. Sci. Semicond. Process. 22 37
[9] Fathy A E, Rosen A, Owen H S, McGinty F, Taylor G C, McGee D J, Perlow S M 2003 IEEE Trans. on Microwave Theory and Techniques 51 1650
[10] Zhang J X, He Z H, Guo H X, Tang D, Xiong C, Li P, Wang X 2014 Acta Phys. Sin. 63 248503 (in Chinese) [张晋新, 贺朝会, 郭红霞, 唐杜, 熊涔, 李培, 王信 2015 63 248503]
[11] Zheng L, Zhao Q, Liu S Z, Xing X J 2012 Acta Phys. Sin. 61 245202 (in Chinese) [郑灵, 赵青, 刘述章, 邢晓俊 2012 61 245202]
[12] Nusobaum A 1975 Solid-State Electronics 18 107
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