Research progress and device applications of multifunctional materials based on two-dimensional film/ferroelectrics heterostructures

Wang Hui; Xu Meng; Zheng Ren-Kui

doi:10.7498/aps.69.20191486

Abstract

With the rapid development of microelectronic integration technology, the miniaturization, integration and multifunction of electronic devices are becoming a general trend. Two-dimensional materials are a class of layered material with atomic layer thickness, and have unique electrical, magnetic, optical and mechanical properties. The co-existence of the weak van der Waals force between layers and the strong covalent bonding within layers makes the two-dimensional material very suitable for the miniature design of new-generation multifunctional electronic devices. Two-dimensional materials, represented by graphene and transition metal chalcogenides, exhibit high mobility, adjustable energy band and high visible light transmittance, and thus having become the frontier hotspots in the field of micro-nanoscience in recent years. Synergy between two-dimensional materials and various functional materials such as SiO₂ insulator, semiconductor, metal and organic compound may lead to new properties and device applications, thus can deepen and expand the basic research and application of two-dimensional materials. Among them, ferroelectric materials have received much attention because of their spontaneous polarizations, high dielectric constants, and high piezoelectric coefficients. The two-dimensional ferroelectric composites well have the advantages of the two, i.e. they not only contain a variety of rich phenomena such as the magnetoelectric coupling effect, ferroelectric field effect and lattice strain effect, tunneling effect, photoelectric effect, and photoluminescence effect, but also have broad applications in devices such as multi-state memories, tunneling transistors, photoelectric diodes, solar cells, super capacitors, and pyroelectric infrared detectors, which have attracted wide concern from academia and industry. To better understand the combination of two-dimensional thin films with ferroelectric substrates and provide a holistic view, we review the researches of several typical two-dimensional film/ferroelectrics heterostructures in this article. First, two-dimensional materials and ferroelectric materials are introduced. Then, the physical mechanism at the interface is briefly illustrated. After that, several typical two-dimensional film/ferroelectrics heterostructures are mainly introduced. The ferroelectric materials including Pb(Zr_1–xTi_x)O₃, (1–x)PbMg_1/3Nb_2/3O₃–xPbTiO₃, P(VDF-TrFE), are mainly summarized, and other ferroelectric materials such as P(VDF-TrFE-CFE), BaTiO₃, BiFeO₃, PbTiO₃, CuInP₂S₆, HfO₂ are briefly involved. The future research emphasis of the two-dimensional materials/ferroelectrics composites is also suggested at the end of the article. This review will present a significant reference to the future design of miniature and multifunctional devices.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
2.
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

Corresponding author: Zheng Ren-Kui, zrk@ustc.edu

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51572278, 11974155)

FullText HTML : translate this paragraph

References

[1]	Geim A K, Novoselov K S 2007 Nat. Mater. 6 183 Google Scholar
[2]	Yoon Y, Ganapathi K, Salahuddin S 2011 Nano Lett. 11 3768 Google Scholar
[3]	Li L, Chen Z, Hu Y, Wang X W, Zhang T, Chen W, Wang Q B 2013 J. Am. Chem. Soc. 135 1213 Google Scholar
[4]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626 Google Scholar
[5]	Lü L, Zhuge F, Xie F, Xiong X J, Zhang Q F, Zhang N, Huang Y, Zhai T Y 2019 Nat. Commun. 10 3331 Google Scholar
[6]	Eswaraiah V, Zeng Q S, Long Y, Liu Z 2016 Small 12 3480 Google Scholar
[7]	Liu H, Neal A T, Zhu Z, Xu X F, Tománek D, Ye P D 2014 ACS Nano 8 4033 Google Scholar
[8]	Topsakal M, Aktürk E, Ciraci S 2009 Phys. Rev. B 79 115442 Google Scholar
[9]	李卫胜, 周健, 王瀚宸, 汪树贤, 于志浩, 黎松林, 施毅, 王欣然 2017 66 218503 Google Scholar Li W S, Zhou J, Wang H C, Wang S X, Yu Z H, Li S L, Shi Y, Wang X R 2017 Acta Phys. Sin. 66 218503 Google Scholar
[10]	Novoselov K S, Mishchenko A, Carvalho A, Neto A H C 2016 Science 353 9439 Google Scholar
[11]	Hui Y Y, Liu X, Jie W, Chan N Y, Hao J, Hsu Y T, Li L J, Guo W, Lau S P 2013 ACS Nano 7 7126 Google Scholar
[12]	Liu M, Nan T X, Hu J M, Zhao S S, Zhou Z, Wang C Y, Jiang Z D, Ren W, Ye Z G, Chen L Q, Sun N X 2016 NPG Asia Mater. 8 e 31 6 Google Scholar
[13]	徐萌, 晏建民, 徐志学, 郭磊, 郑仁奎, 李晓光 2018 67 157506 Google Scholar Xu M, Yan J M, Xu Z X, Guo L, Zheng R K, Li X G 2018 Acta Phys. Sin. 67 157506 Google Scholar
[14]	Yang Y J, Yang M M, Luo Z L, Huang H, Wang H, Bao J, Hu C, Pan G, Yao Y, Liu Y, Li X G, Zhang S, Zhao Y G, Gao C 2012 Appl. Phys. Lett. 100 043506 Google Scholar
[15]	Yan J M, Xu M, Chen T W, Yang M M, Liu F, Wang H, Guo L, Xu Z X, Fan F Y, Gao G Y, Dong S N, Li X G, Luo H S, Zhao W Y, Zheng R K 2019 Phys. Rev. Appl. 11 034037 Google Scholar
[16]	Jie W J, Hui Y Y, Chan N Y, Zhang Y, Lau S P, Hao J H 2013 J. Phys. Chem. C 117 13747 Google Scholar
[17]	Tan Y W, Zhang Y, Bolotin K, Zhao Y, Adam S, Hwang E H, Sarma S D, Stomer H L, Kim P 2007 Phys. Rev. Lett. 99 246803 Google Scholar
[18]	Fratini S, Guinea F 2008 Phys. Rev. B 77 195415 Google Scholar
[19]	Chen J H, Jang C, Xiao S D, Ishigami M, Fuhrer M S 2008 Nat. Nanotech. 3 206 Google Scholar
[20]	Hong X, Posadas A, Zou K, Ahn C H, Zhu J 2009 Phys. Rev. Lett. 102 136804 Google Scholar
[21]	Hong X, Hoffman J, Posadas A, Zhu K, Ahn C H, Zhu J 2010 Appl. Phys. Lett. 97 033114 Google Scholar
[22]	Zheng Y, Ni G X, Bae S, Cong C X, Kahya O, Toh C T, Kim H R, Im D, Yu T, Ahn J H, Hong B H, Özyimaz B 2011 Europhys. Lett. 93 17002 Google Scholar
[23]	Song E B, Lian B, Kim S M, Lee S, Chung T K, Wang M, Zeng C, Xu G, Wong K, Zhou Y, Rasool H I, Seo D H, Chung H J, Heo J, Seo S, Wang K L 2011 Appl. Phys. Lett. 99 042109 Google Scholar
[24]	Lee W, Kahya O, Toh C T, Özyilmaz B, Ahn J H 2013 Nanotech. 24 475202 Google Scholar
[25]	Baeumer C, Rogers S P, Xu R, Martin L W, Shim M 2013 Nano Lett. 13 1693 Google Scholar
[26]	Zhang X W, Xie D, Xu J, Zhao H, Zhang C, Sun Y, Zhao Y, Feng T, Li G, Ren T 2014 12th IEEE International Conference on Solid-State and Intergrated Circuit Technology Guilin, China, Oct 28−31, 2014 p978
[27]	Zhang X W, Xie D, Xu J L, Zhang C, Sun Y L, Zhao Y F, Li X, Li X M, Zhu H W, Chen H M, Chang T C 2015 Carbon 93 384 Google Scholar
[28]	Lipatov A, Fursina A, Vo T H, Sharma P, Gruverman A, Sinitskii A 2017 Adv. Electron. Mater. 3 1700020 Google Scholar
[29]	Rogers S P, Xu R, Pandya S, Martin L W, Shim M 2017 J. Phys. Chem. C 121 7542 Google Scholar
[30]	Fang B J, Ding C L, Wu J, Du Q B, Ding J N, Zhao X Y, Xu H Q, Luo H S 2012 Eur. Phys. J. Appl. Phys. 57 30101 Google Scholar
[31]	Liu L, Li X, Wu X, Wang Y, Di W, Lin D, Zhao X, Luo H, Neumann N 2009 Appl. Phys. Lett. 95 192903 Google Scholar
[32]	Lee H J, Zhang S, Luo J, Li F, Shrout T R 2010 Adv. Funct. Mater. 20 3154 Google Scholar
[33]	Ding F, Ji H, Chen Y, Herklotz A, Dörr K, Mei Y, Rastelli A, Schmidt O G 2012 Nano Lett. 10 3453 Google Scholar
[34]	Jie W J, Hui Y Y, Zhang Y, Lau S P, Hao J H 2013 Appl. Phys. Lett. 102 223112 Google Scholar
[35]	Jie W J, Hao J H 2018 Nanoscale 10 328 Google Scholar
[36]	Park N, Kang H, Park J, Lee Y, Yun Y, Lee J H, Lee S G, Lee Y H, Suh D 2015 ACS Nano 9 10729 Google Scholar
[37]	Kato T, Hatakeyama R 2012 Nat. Nanotech. 7 651 Google Scholar
[38]	Ni Z H, Yu T, Lu Y H, Wang Y Y, Feng Y P, Shen Z X 2008 ACS Nano 2 2301 Google Scholar
[39]	Wang L, Luo J, Chen Y, Lin L, Huang X, Xue H, Gao J 2019 ACS Appl. Mater. Interface 11 17774 Google Scholar
[40]	Zhao X, Papageorgiou D G, Zhu L Y, Ding F, Young R J 2019 Nanoscale 11 14339 Google Scholar
[41]	Zhou M Q, Kang Z X, Zhu S M 2019 Nanotechnology 30 395701 Google Scholar
[42]	Zheng Y, Ni G X, Toh C T, Zeng M G, Chen S T, Yao K, Özyilmaz B 2009 Appl. Phys. Lett. 94 163505 Google Scholar
[43]	Zheng Y, Ni G X, Toh C T, Tan C Y, Yao K, Özyilmaz B 2010 Phys. Rev. Lett. 105 166602 Google Scholar
[44]	Ni G X, Zheng Y, Bae S, Tan C Y, Kahya O, Wu J, Hong B H, Yao K, Özyilmaz B 2012 ACS Nano 6 3935 Google Scholar
[45]	Wang X D, Tang M H, Chen Y, Wu G, Huang H, Zhao X, Tian B, Wang J, Sun S, Shen H, Lin T, Sun J, Meng X, Chu J 2016 Opt. Quant. Electron. 48 345 Google Scholar
[46]	Wang X, Chen Y, Wu G, Wang J, Tian B, Sun S, Shen H, Lin T, Hu W, Kang T, Tang M, Xiao Y, Sun J, Meng X, Chu J 2018 Nanotechnology 29 134002 Google Scholar
[47]	Bae S H, Kahya O, Sharma B K, Kwoon J, Cho H J, Özyilmaz B, Ahn J H 2013 ACS Nano 7 3130 Google Scholar
[48]	Park S, Kim Y, Jung H, Park J Y, Lee N, Seo Y 2017 Sci. Rep. 7 17290 Google Scholar
[49]	Kim S, Dong Y, Hossain M M, Gorman S, Towfeeq I, Gajula D, Childress A, Rao A M, Koley G 2019 ACS Appl. Mater. Interface 11 16006 Google Scholar
[50]	Silibin M V, Bystrov V S, Karpinsky D V, Nasani N, Goncalves G, Gavrilin I M, Solnyshkin A V, Marques P A A P, Singh B, Bdikin 2017 Appl. Surf. Sci. 421 42 Google Scholar
[51]	Yaqoob U, Iftekhar Uddin A S M, Chung G S 2018 Compos. Part B 136 92 Google Scholar
[52]	Chen Y, Zhang L, Liu J, Lin X, Xu W, Yue Y, Shen Q D 2019 Carbon 144 15 Google Scholar
[53]	Garain S, Jana S, Sinha T K, Mandal D 2016 ACS Appl. Mater. Interfaces 8 4532 Google Scholar
[54]	Karan S K, Mandal D, Khatua B B 2015 Nanoscale 7 10655 Google Scholar
[55]	Lu P, Wu X j, Guo W, Zeng X C 2012 Phys. Chem. Chem. Phys. 14 13035 Google Scholar
[56]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotech. 7 699 Google Scholar
[57]	Zhang X W, Xie D, Xu J L, Sun Y L, Li X, Zhang C, Dai R X, Zhao Y F, Li X M, Li X, Zhu H W 2015 IEEE Electron. Device Lett. 36 784 Google Scholar
[58]	Zhou C J, Wang X S, Raju S, Lin Z Y, Villaroman D, Huang B L, Chan H L W, Chan M, Chai Y 2015 Nanoscale 7 8695 Google Scholar
[59]	Lu Z Y, Serrao C, Khan A I, You L, Wong J C, Ye Y, Zhu H Y, Zhang X, Salahuddin S 2017 Appl. Phys. Lett. 111 023104 Google Scholar
[60]	Ganapathi K L, Rath M, Rao M S R 2019 Semicond. Sci. Technol. 34 055016 Google Scholar
[61]	Sun Y L, Xie D, Zhang X W, Xu J L, Li X M, Li X, Dai R X, Li X, Li P, Gao X S, Zhu H W 2017 Nanotechnology 28 045204 Google Scholar
[62]	Li T, Gao L M, Xie H Q, Ye L Q, Yang W D, Liu Q L, Li K 2018 Mater. Res. Express 5 066308 Google Scholar
[63]	Lipatov A, Sharma P, Gruverman A, Sinitskii A 2015 ACS Nano 9 8089 Google Scholar
[64]	Lipatov A, Li T, Vorobeva N S, Sinitskii A, Gruverman A 2019 Nano Lett. 19 3194 Google Scholar
[65]	Ko C, Lee Y, Chen Y, Suh J, Fu D, Suslu A, Lee S, Clarkson J D, Choe H S, Tongay S, Ramesh R, Wu J 2016 Adv. Mater. 28 2923 Google Scholar
[66]	Li C H, McCreary K M, Jonker B T 2016 ACS Omega 1 1075 Google Scholar
[67]	Fang H J, Lin Z Y, Wang X S, Tang C Y, Chen Y, Zhang F, Chai Y, Li Q, Yan Q F, Chan H L W, Dai J Y 2015 Opt. Express 23 251881 Google Scholar
[68]	Liu Y D, Guo J M, Yu A F, Zhang Y, Kou J Z, Zhang K, Wen R M, Zhang Y, Zhai J Y, Wang Z L 2018 Adv. Mater. 30 1704524 Google Scholar
[69]	Lee H S, Min S W, Park M K, Lee Y T, Jeon P J, Kim J H, Ryu S, Im S 2012 Small 8 3111 Google Scholar
[70]	Radisavljevic B, Radnovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotech. 6 147 Google Scholar
[71]	Kobayashi T, Hori N, Nakajima T, Kawae T 2016 Appl. Phys. Lett. 108 132903 Google Scholar
[72]	Liu L, Wang X D, Han L, Tian B, Chen Y, Wu G L, Li D, Yan M G, Wang T, Sun S, Shen H, Lin T, Sun J L, Duan C G, Wang J L, Meng X J, Chu J H 2017 AIP Adv. 7 065121 Google Scholar
[73]	Liu X Q, Liang R R, Gao G Y, Pan C F, Jiang C S, Xu Q, Luo J, Zou X M, Yang Z Y, Liao L, Wang Z L 2018 Adv. Mater. 30 1800932 Google Scholar
[74]	Wang X D, Liu C, Chen Y, Wu G J, Yan X, Huang H, Wang Peng, Tian B, Hong Z C, Wang Y T, Sun S, Shen H, Lin T, Hu W D, Tang M H, Zhou P, Wang J L, Sun J L, Meng X J, Chu J H, Li Z 2017 2 D Mater. 4 025036 Google Scholar
[75]	Wang X D, Wang P, Wang J L, Hu W D, Zhou X, Guo N, Sun H S, Shen H, Lin T, Tang M, Liao L, Jiang A, Sun J, Meng X, Chen X, Lu W, Chu J 2015 Adv. Mater. 27 6575 Google Scholar
[76]	Wu G J, Wang X D, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J, Zhang S T, Bian L, Sun J, Meng X, Chu J 2016 Nanotechnology 27 364002 Google Scholar
[77]	Yin L, Wang Z X, Wang F, Xu K, Cheng R Q, Wen Y, Li J, He J 2017 Appl. Phys. Lett. 110 123106 Google Scholar
[78]	Chen Y, Wang X D, Wang P, Huang H, Wu G J, Tian B, Hong Z C, Wang Y T, Sun S, Shen H, Wang J H, Hu W D, Sun J L, Meng X J, Chu J H 2016 ACS Appl. Mater. Interfaces 8 32083 Google Scholar
[79]	Yin C, Wang X D, Chen Y, Li T, Sun S, Shen H, Du P, Sun J, Meng X, Chu J, Wong H F, Leung C W, Wang Z, Wang J 2018 Nanoscale 10 1727 Google Scholar
[80]	Nguyen A, Sharma P, Scott T, Preciado E, Klee V, Sun D, Lu I H, Barroso D, Kim S, Shur V Y, Akhmatkhanov A R, Gryveman A, Bartels L, Dowben P A 2015 Nano Lett. 15 3364 Google Scholar
[81]	Wen B, Zhu Y, Yudistira D, Boes A, Zhang L, Yidirim T, Liu B, Yan H, Sun X, Zhou Y, Xue Y, Zhang Y, Fu L, Mitchell A, Zhang H, Lu Y 2019 ACS Nano 13 5335 Google Scholar
[82]	Jin H, Yoon W Y, Jo W 2017 Appl. Phys. Lett. 110 191601 Google Scholar
[83]	Shin H W, Son J Y 2018 Electron. Mater. Lett. 14 59 Google Scholar
[84]	Li T, Lipatov A, Lu H, Lee H, Lee J W, Torun E, Wirtz L, Eom C B, Íñigue J, Sinitskii A, Gruverman A 2018 Nat. Comm. 9 3344 Google Scholar
[85]	Li T, Sharma P, Lipatov A, Lee H, Lee J W, Zhuravlev M Y, Paudel T R, Genenko Y A, Eom C B, Tsymbal E Y, Sinitskii A, Gruveman A 2017 Nano Lett. 17 922 Google Scholar
[86]	Li Y, Sun X Y, Xu C Y, Cao J, Sun Z Y, Zhen L 2018 Nanoscale 10 23080 Google Scholar
[87]	Shin H W, Son J Y 2019 J. Alloy. Compd. 792 673 Google Scholar
[88]	Si M W, Liao P Y, Qiu G, Duan Y, Ye P D 2018 ACS Nano 12 6700 Google Scholar
[89]	Si M W, Jiang C S, Chung W, Du Y C, Alam M A, Ye P D 2018 Nano Lett. 18 3682 Google Scholar
[90]	Zhang H, Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2009 Nat. Phys. 5 438 Google Scholar
[91]	Wang M, Liu C, Xu J P, Yang F, Miao L, Yao M Y, Gao C L, Shen C, Ma X, Chen X, Xu Z A, Liu Y, Zhang S C, Qian D, Jia J F, Xue Q K 2012 Science 336 52 Google Scholar
[92]	Zhao X W, Dong S N, Gao G Y, Xu Z X, Xu M, Yan J M, Zhao W Y, Liu Y K, Yan S Y, Zhang J X, Wang Y, Lu H Z, Li X G, Furdya J K, Luo H S, Zheng R K 2018 Quant. Mater. 3 52 Google Scholar
[93]	Yan J M, Xu Z X, Chen T W, Xu M, Zhang C, Zhao X W, Liu F, Guo L, Yan S Y, Gao G Y, Wang F F, Zhang J X, Dong S N, Li X G, Luo H S, Zhao W, Zheng R K 2019 ACS Appl. Mater. Interfaces 11 9548 Google Scholar
[94]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Technol. 9 372 Google Scholar
[95]	Zhang S, Yang J, Xu R, Wang F, Li W, Ghufran M, Zhang Y W, Yu Z, Zhang G, Qin Q, Lu Y 2014 ACS Nano 8 9590 Google Scholar
[96]	Lee Y T, Kwoon H, Kim J S, Kim H H, Lee Y J, Lim J A, Song Y W, Yi Y, Choi W K, Hwang H K, Im S 2015 ACS Nano 9 10394 Google Scholar
[97]	Xie L, Chen X, Dong Z, Yu Q, Zhao X X, Yuan G L, Zeng Z M, Wang Y J, Zhang K 2019 Adv. Electron. Mater. 5 1900458 Google Scholar

Cited By

图 1 结构示意图　(a) 中间插层的二维材料^[10]; (b) 石墨烯/MoS₂/PMN-PT异质结^[11]; (c) MoS₂/P(VDF-TrFE)/SiO₂/Si异质结^[5]

Figure 1. The schematic diagrams: (a) 2D Materials with intercalation^[10]; (b) graphene/MoS₂/PMN-PT heterostructure^[11]; (c) MoS₂/P(VDF-TrFE)/SiO₂/Si heterostructure^[5].

DownLoad: Full-Size Img PowerPoint

图 2 (a) PMN-PT未被极化时具有8个自发极化方向: r1⁺, r2⁺, r3⁺, r4⁺, r1^–, r2^–, r3^–, r4^–^[12]; (b) PMN-PT(001)单晶的应变-电场曲线^[13]; (c) 不同应变状态下, MoS₂的光致发光谱^[11]; (d) 不同外加电场下, PMN-PT(011)单晶的应变-电场曲线^[15]

Figure 2. (a) The eight possible polarization directions for an unpoled PMN-PT single crystal: r1⁺, r2⁺, r3⁺, r4⁺, r1^–, r2^–, r3^–, r4^–^[12]; (b) ε_xx – E curves for PMN-PT(001) single crystals^[13]; (c) photoluminescence spectra of the MoS₂ under various strains^[11]; (d) ε_xx – E curves for PMN-PT(011) single crystals^[15].

DownLoad: Full-Size Img PowerPoint

图 3 (a) PMN-PT铁电单晶衬底的极化-电场(P-E)曲线, 及外加电场下石墨烯/PMN-PT铁电场效应晶体管的界面电荷效应示意图^[16]; (b) 石墨烯/PMN-PT铁电场效应晶体管的I_ds–V_g曲线^[16]

Figure 3. (a) Polarization-Electric field (P-E) hysteresis loop of PMN-PT substrate, and schematic diagrams of interface charge effects in graphene/PMN-PT FeFET^[16]; (b) the I_ds–V_g curves of graphene on PMN-PT^[16].

DownLoad: Full-Size Img PowerPoint

图 4 (a) 石墨烯/PZT/STO异质结的示意图^[20]; (b) 300 nm PZT上的多层石墨烯AFM图^[21]; (c) 不同栅压走向下, 石墨烯/PZT FeFET的电阻率ρ随栅压V_g的变化曲线^[21]

Figure 4. (a) Schematic of the graphene/PZT/STO heterostructure^[20]; (b) AFM image of a multilayer graphene sheet on a 300 nm PZT film^[21]; (c) the channel resistivity of graphene/PZT FeFET as a function of the gate voltage with different memory operation^[21].

DownLoad: Full-Size Img PowerPoint

图 5 (a) 机械剥离-石墨烯/PZT FeFET的I_DS-V_G曲线^[23]; (b) CVD-石墨烯/PZT FeFET的I_DS-V_G曲线^[23]; (c) V_DS = 50 mV时, 石墨烯/PZT FeFET中的I_DS-V_G曲线^[25]; (d) 不同栅压下, 真空和空气中分别测得的I_DS-V_G曲线^[25]

Figure 5. (a) I_DS-V_G characteristics of the exfoliated-graphene/PZT FeFET^[23]; (b) I_DS-V_G characteristics of the CVD-graphene/PZT FeFET^[23]; (c) I_DS-V_G of the graphene/PZT FeFET under a drain voltage at 50 mV^[25]; (d) drain current as a function of gate voltage of graphene/PZT FeFET in air and vacuum, respectively^[25].

DownLoad: Full-Size Img PowerPoint

图 6 (a) PZT处于不同极化状态时, 石墨烯/PZT的I_DS-V_G曲线^[28]; (b) 在施加V_G = –6 V和V_G = 6 V的擦写电压后, 石墨烯/PZT FET分别处于“ON”态和“OFF”时的漏极电流随时间的变化曲线^[28]; (c) 石墨烯/PZT FET结构示意图^[29]; (d) 在PZT薄膜翻转为向上和向下的极化状态后, 分别在真空中放置250 s和24 h后测得的I_d-V_G曲线^[29]

Figure 6. (a) Scheme of the electrical measurements of graphene/PZT FeFETs at different polarization state of PZT^[28]; (b) after application of the write (V_G = –6 V) or erase (V_G = +6 V) voltages, the ON and OFF drain–source currents at the read voltage (V_G = 0) and an auxiliary pulse (V_G = –1.25 V) were measured as a function of time^[28]; (c) schematic device structure of the graphene/PZT FeFET^[29]; (d) I_d-V_G characteristics measured in vacuum 250 s and 24 h after switching for both the UP and DOWN polarization states^[29].

DownLoad: Full-Size Img PowerPoint

图 7 (a)对石墨烯/PMN-PT施加电场的示意图^[33]; (b) 石墨烯的D, G, 2D和2D’峰位随面内应变的变化曲线^[33]; (c) 石墨烯/PMN-PT异质结构示意图^[34]; (d) 不同外场下PMN-PT(002)峰的XRD图^[34]; (e) 不同外场下石墨烯的2D拉曼峰图^[34]

Figure 7. (a) Schematic of the electro-mechanical device used to apply in-plane biaxial strain to the graphene^[33]; (b) D, G, 2D and 2D’ peaks plotted as a function of the biaxial strain ε_||^[33]; (c) schematic of graphene/PMNPT heterostructure^[34]; (d) the PMN-PT (002) peaks of XRD 2θ scanning patterns with different bias voltage^[34]; (e) 2D peaks of graphene under different bias voltage^[34].

DownLoad: Full-Size Img PowerPoint

图 8 (a) 石墨烯/PMN-PT FeFET的I_ds-V_g曲线^[16]; (b) 石墨烯的载流子浓度随栅压的变化曲线^[35]; (c) 石墨烯/h-BN/PMN-PT FET示意图^[36]; (d) 不同栅压范围下的I_ds-V_g曲线^[36]

Figure 8. (a) The I_ds-V_g curves of graphene on PMN-PT^[16]; (b) charge carrier density of graphene on PMN-PT as a function of the gate voltage^[35]; (c) schematic diagrams of the graphene/h-BN/PMN-PT FET^[36]; (d) I_ds-V_g curves of graphene at different gate-voltage sweep ranges^[36].

DownLoad: Full-Size Img PowerPoint

图 9 (a) 石墨烯/P(VDF-TrFE)的电位移D和P(VDF-TrFE)的电位移D’随外加电场的变化曲线^[42]; (b) 石墨烯/P(VDF-TrFE)的电阻持久性能^[43]; (c) 石墨烯/P(VDF-TrFE)柔性透明导电器件光学照片^[44]; (d) 石墨烯/P(VDF-TrFE)的I_sd和I_tg随栅极电压的变化曲线^[46]

Figure 9. (a) The electric displacement field D of the graphene/P(VDF-TrFE) FeFET and D’ of P(VDF-TrFE) thin film as a function of the applied electric field^[42]; (b) the resistance endurance property of the graphene/P(VDF-TrFE) FeFET^[43]; (c) optical image of the flexible transparent graphene/P(VDF-TrFE) FeFET device^[44]; (d) I_sd and I_tg vs V_tg curves of the graphene/P(VDF-TrFE) FeFET^[46].

DownLoad: Full-Size Img PowerPoint

图 10 (a) 基于石墨烯/P(VDF-TrFE)/石墨烯复合结构的声压器件和测试回路照片^[47]; (b) 基于石墨烯/P(VDF-TrFE)/石墨烯复合结构的声压驱动器和纳米发电机的示意图^[47]; (c) 基于P(VDF-TrFE)/石墨烯复合结构的发电机和话筒的示意图和照片^[48]; (d) 基于P(VDF-TrFE)/石墨烯复合结构的压力测试装置^[49]; (e) 当被粘贴在手上时P(VDF-TrFE)/PMN-PT/GO薄膜的短路电流^[51]; (f) 用PFM探针在GO/P(VDF-TrFE)上写入和读取数据的示意图^[52]

Figure 10. (a) Photograph of the graphene/P(VDF-TrFE)/graphene based acoustic device and the measurement circuit^[47]; (b) schematic depiction showing graphene/P(VDF-TrFE)/graphene-based device can work as an actuator as well as a nanogenerator^[47]; (c) schematics and photograph of graphene/PVDF/graphene based generator and loudspeaker^[48]; (d) photographic image of the pressure measurement setup showing the pressurized gas inlet, the sensor mounting, and the data acquisition system^[49]; (e) short-circuit current of the P(VDF-TrFE)/PMN-PT/GO film when attached on the human hand^[51]; (f) a schematic of data writing and reading on GO/P(VDF-TrFE) Multilayer film by a PFM tip^[52].

DownLoad: Full-Size Img PowerPoint

图 11 (a) 以PZT为背栅的MoS₂ FET示意图^[57]; (b) MoS₂/PZT FET的转移特性曲线, 插图为存储窗口随最大扫描电压的变化曲线^[57]; (c) 不同表面粗糙度的MoS₂/PZT FET转移特性曲线^[59]; (d) MoS₂/PZT FET在不同温度下的转移特性曲线^[61]

Figure 11. (a) Schematic diagram of the PZT back gated MoS₂ FeFET^[57]; (b) the transfer curves of MoS₂/PZT FET. Memory window variation with increasing V_G sweep range as shown in the inset^[57]; (c) the transfer characteristics of MoS₂ transistors fabricated on PZT films with different surface qualities^[59]; (d) the I_ds-V_gs curves of MoS₂/PZT FETs under different temperatures rising from 300 to 380 K and V_gmax at 8 V^[61].

DownLoad: Full-Size Img PowerPoint

图 12 (a) 同一个MoS₂/PZT FeFET在加栅压的同时和加栅压静置5 min后的I_DS-V_G曲线^[63]; (b) 光照对FeFET器件开关持续能力的影响^[63]; (c) 以向下的铁电畴为栅极的MoS₂-PZT FeFET的PFM相位图^[64]; (d) 不同数量导电通道的I_DS-V_DS曲线^[64]

Figure 12. (a) I_DS-V_G characteristics for the same MoS₂/PZT FeFET measured while V_G was applied and 5 min after the corresponding gate voltages were applied, respectively^[63]; (b) effect of light illumination on the retention properties of the FeFET^[63]; (c) PFM phase images of a MoS₂-PZT FeFET with one and three conductive paths gated by the domains with the downward polarization^[64]; (d) I_DS-V_DS curves for different numbers of conductive paths^[64].

DownLoad: Full-Size Img PowerPoint

图 13 (a) 2D/PZT FeFET的结构示意图^[65]; (b) PZT不同极化态对WSe₂ PL光谱的影响^[65]; (c, d) PZT不同极化态下, WSe₂的PL发光分布图^[65]; (e) PZT不同极化态下, WS₂的PL发光分布图^[66]; (f) PZT不同极化态下, WS₂的PL光谱及拟合曲线^[66]

Figure 13. (a) Device schematic of the 2D TMD/PZT heterostructure^[65]; (b) effect of different polarization state for PZT on the PL spectra of WSe₂^[65]; (c, d) the maps of integrated PL intensity under down- and up-polarized states, respectively^[64]; (e) PL peak intensity map obtained from the WS₂ monolayer over a 30 × 30 μm² area under different polarized states^[66]; (f) raw PL spectra (solid black line) and fits (dashed green line) using two Lorentzians centered at 2.01 eV (red line) and 1.99 eV (blue line)^[66].

DownLoad: Full-Size Img PowerPoint

图 14 (a) MoS₂/PMN-PT的结构示意图^[11]; (b) 不同应力作用下MoS₂的光致发光光谱^[11]; (c) 不同应力作用下MoS₂的能带示意图^[11]; (d) PMN-PT/MoS₂ FET的结构示意图^[67]; (e) 无栅极电压时, PMN-PT/MoS₂ FET在不同强度光照下的伏安特性曲线^[67]; (f) PMN-PT/MoS₂ FET的沟道电流随红外光照开/关的响应曲线^[67]

Figure 14. (a) Schematic diagram of MoS₂/PMN-PT composite^[11]; (b) in-situ photoluminescence (PL) spectra of MoS₂/PMN-PT composite under different strain states^[11]; (c) calculated band structure of trilayer MoS₂ as a function of the strain^[11]; (d) schematic of MoS₂/PMN-PT FET^[67]; (e) I_ds – V_ds curves of MoS₂/PMN-PT FET under different light illumination with gate voltage V_G = 0 V^[67]; (f) the time-resolved photocurrent in response to IR on/off at an irradiance of 6 mW/mm²^[67].

DownLoad: Full-Size Img PowerPoint

图 15 (a) 磁性、半导体性、压电性相互耦合示意图^[68]; (b) MoS₂基MIPG-FET的3D示意图^[68]; (c) PMN-PT正向极化态下, MoS₂基MIPG-FET对H = 33 mT的瞬态响应^[68]; (d) PMN-PT负向极化态下, MoS₂基MIPG-FET对H = 42 mT的瞬态响应^[68]

Figure 15. (a) Schematic showing the three-phase coupling among magnetism, semiconductor, and piezoelectricity^[68]; (b) 3D schematic illustration of an MoS₂-based MIPG-FET^[68]; (c) transient response of the MIPG-FET at H = 33 mT at Pr⁺ state^[68]; (d) transient response of the MIPG-FET at H = 42 mT at Pr^– state^[68].

DownLoad: Full-Size Img PowerPoint

图 16 (a) MoS₂基FET的3D模型图^[69]; (b) 亚阈值摆幅和电导随沟道长度的变化曲线^[73]; (c) 以P(VDF-TrFE)为顶栅的MoSe₂基FeFET的3D模型图^[74]; (b) MoSe₂基FeFET在写入和擦除状态下的持久性能^[74]

Figure 16. (a) Schematic 3D top-view of the MoS₂-FET^[69]; (b) Detailed plots of SS and g_m as a function of L_ch^[73]; (c) 3D schematic diagram of the P(VDF-TrFE) top gated MoSe₂ FeFET^[74]; (d) retention performance of this device at the write and erase states^[74].

DownLoad: Full-Size Img PowerPoint

图 17 (a) P(VDF-TrFE)顶栅MoS₂光电FET在光照下的3D模型图^[75]; (b) P(VDF-TrFE)处于不同极化状态时, MoS₂光电FET的光开关行为^[75]; (c) 以P(VDF-TrFE)顶栅并中插HfO₂薄膜的MoTe₂光电FET示意图^[77]; (d) 在黑暗及不同光照强度(520−1550 nm)下, In₂Se₃光电FET的伏安特性曲线^[76]

Figure 17. (a) 3D schematic diagram of the P(VDF-TrFE) top gated MoS₂ phtodetector with light beam^[75]; (b) photoswitching behavior of ferroelectric polarization gating triple-layer MoS₂ photodetector at three states^[75]; (c) the schematic diagram of back-gate MoTe₂ FET in which HfO₂ of 30 nm is deposited on MoTe₂ before coating P(VDF-TrFE) polymer^[77]; (d) drain-source characteristics of the In₂Se₃ phtodetector in the dark and under different illuminating light wavelength (520−1550 nm)^[76].

DownLoad: Full-Size Img PowerPoint

图 18 (a) 单层薄膜在LiNbO₃铁电畴上择优生长的光学照片和在单极化域上的双层^[80]; (b) MoSe₂和(c) WSe₂的光致发光分布图^[81]; (d) 在MoS₂/BaTiO₃/SrRuO₃上的测试示意图^[85]; (e−f) MoS₂/BaTiO₃/SrRuO₃在紫外光照前后的PFM相图^[85]

Figure 18. (a) The optical micrograph shows preferential growth of single-layer MoS₂ on LiNbO₃ domains^[80]; PL mapping of exfoliated monolayer (b) MoSe₂ and (c) WSe₂ on a single polarized domain. The gold dashed line indicates one single dipole^[81]; (d) a sketch of the experiment geometry in MoS₂/BaTiO₃/SrRuO₃ junctions^[85]; (e)−(f) PFM phase images of MoS₂/BaTiO₃/SrRuO₃ junctions acquired in the dark before and after UV illumination^[85].

DownLoad: Full-Size Img PowerPoint

图 19 (a) PMN-PT衬底分别处于P_r⁺, P_r^–态时, CBS薄膜的电阻R随温度T的变化曲线, 插图: CBS薄膜的载流子浓度随温度T的变化曲线^[92]; (b) PMN-PT衬底极化翻转引起的CBS薄膜费米能级移动的示意图^[92]; (c) P(VDF-TrFE)/BP/MoS₂/SiO₂/Si结构FeFET示意图^[94]; (d) 在BP/PZT/LNO/SiO₂/Si结构的FeFET中光电存储原理图^[95]; (e) 在BP/PZT/LNO/SiO₂/Si结构存储器中的“电写光读”动态循环曲线^[95]

Figure 19. (a) The resistance R as a function of the temperature T for the CBS films at P_r⁺ state and P_r^– state, respectively^[92]; (b) schematic band diagrams of the Fermi level shift induced by polarization Switching^[92]; (c) schematic of dual-gated P(VDF-TrFE)/BP/MoS₂/SiO₂/Si FeFET^[94]; (d) schematic illustration of the photoelectric memory in FeFET with BP/PZT heterostructure fabricated on LNO/SiO₂/Si substrate^[95]; (e) dynamic cycles of the “electrical writing-optical reading” process of the BP/PZT/LNO/SiO₂/Si memory^[95]

DownLoad: Full-Size Img PowerPoint

map

[1]	Geim A K, Novoselov K S 2007 Nat. Mater. 6 183 Google Scholar
[2]	Yoon Y, Ganapathi K, Salahuddin S 2011 Nano Lett. 11 3768 Google Scholar
[3]	Li L, Chen Z, Hu Y, Wang X W, Zhang T, Chen W, Wang Q B 2013 J. Am. Chem. Soc. 135 1213 Google Scholar
[4]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626 Google Scholar
[5]	Lü L, Zhuge F, Xie F, Xiong X J, Zhang Q F, Zhang N, Huang Y, Zhai T Y 2019 Nat. Commun. 10 3331 Google Scholar
[6]	Eswaraiah V, Zeng Q S, Long Y, Liu Z 2016 Small 12 3480 Google Scholar
[7]	Liu H, Neal A T, Zhu Z, Xu X F, Tománek D, Ye P D 2014 ACS Nano 8 4033 Google Scholar
[8]	Topsakal M, Aktürk E, Ciraci S 2009 Phys. Rev. B 79 115442 Google Scholar
[9]	李卫胜, 周健, 王瀚宸, 汪树贤, 于志浩, 黎松林, 施毅, 王欣然 2017 66 218503 Google Scholar Li W S, Zhou J, Wang H C, Wang S X, Yu Z H, Li S L, Shi Y, Wang X R 2017 Acta Phys. Sin. 66 218503 Google Scholar
[10]	Novoselov K S, Mishchenko A, Carvalho A, Neto A H C 2016 Science 353 9439 Google Scholar
[11]	Hui Y Y, Liu X, Jie W, Chan N Y, Hao J, Hsu Y T, Li L J, Guo W, Lau S P 2013 ACS Nano 7 7126 Google Scholar
[12]	Liu M, Nan T X, Hu J M, Zhao S S, Zhou Z, Wang C Y, Jiang Z D, Ren W, Ye Z G, Chen L Q, Sun N X 2016 NPG Asia Mater. 8 e 31 6 Google Scholar
[13]	徐萌, 晏建民, 徐志学, 郭磊, 郑仁奎, 李晓光 2018 67 157506 Google Scholar Xu M, Yan J M, Xu Z X, Guo L, Zheng R K, Li X G 2018 Acta Phys. Sin. 67 157506 Google Scholar
[14]	Yang Y J, Yang M M, Luo Z L, Huang H, Wang H, Bao J, Hu C, Pan G, Yao Y, Liu Y, Li X G, Zhang S, Zhao Y G, Gao C 2012 Appl. Phys. Lett. 100 043506 Google Scholar
[15]	Yan J M, Xu M, Chen T W, Yang M M, Liu F, Wang H, Guo L, Xu Z X, Fan F Y, Gao G Y, Dong S N, Li X G, Luo H S, Zhao W Y, Zheng R K 2019 Phys. Rev. Appl. 11 034037 Google Scholar
[16]	Jie W J, Hui Y Y, Chan N Y, Zhang Y, Lau S P, Hao J H 2013 J. Phys. Chem. C 117 13747 Google Scholar
[17]	Tan Y W, Zhang Y, Bolotin K, Zhao Y, Adam S, Hwang E H, Sarma S D, Stomer H L, Kim P 2007 Phys. Rev. Lett. 99 246803 Google Scholar
[18]	Fratini S, Guinea F 2008 Phys. Rev. B 77 195415 Google Scholar
[19]	Chen J H, Jang C, Xiao S D, Ishigami M, Fuhrer M S 2008 Nat. Nanotech. 3 206 Google Scholar
[20]	Hong X, Posadas A, Zou K, Ahn C H, Zhu J 2009 Phys. Rev. Lett. 102 136804 Google Scholar
[21]	Hong X, Hoffman J, Posadas A, Zhu K, Ahn C H, Zhu J 2010 Appl. Phys. Lett. 97 033114 Google Scholar
[22]	Zheng Y, Ni G X, Bae S, Cong C X, Kahya O, Toh C T, Kim H R, Im D, Yu T, Ahn J H, Hong B H, Özyimaz B 2011 Europhys. Lett. 93 17002 Google Scholar
[23]	Song E B, Lian B, Kim S M, Lee S, Chung T K, Wang M, Zeng C, Xu G, Wong K, Zhou Y, Rasool H I, Seo D H, Chung H J, Heo J, Seo S, Wang K L 2011 Appl. Phys. Lett. 99 042109 Google Scholar
[24]	Lee W, Kahya O, Toh C T, Özyilmaz B, Ahn J H 2013 Nanotech. 24 475202 Google Scholar
[25]	Baeumer C, Rogers S P, Xu R, Martin L W, Shim M 2013 Nano Lett. 13 1693 Google Scholar
[26]	Zhang X W, Xie D, Xu J, Zhao H, Zhang C, Sun Y, Zhao Y, Feng T, Li G, Ren T 2014 12th IEEE International Conference on Solid-State and Intergrated Circuit Technology Guilin, China, Oct 28−31, 2014 p978
[27]	Zhang X W, Xie D, Xu J L, Zhang C, Sun Y L, Zhao Y F, Li X, Li X M, Zhu H W, Chen H M, Chang T C 2015 Carbon 93 384 Google Scholar
[28]	Lipatov A, Fursina A, Vo T H, Sharma P, Gruverman A, Sinitskii A 2017 Adv. Electron. Mater. 3 1700020 Google Scholar
[29]	Rogers S P, Xu R, Pandya S, Martin L W, Shim M 2017 J. Phys. Chem. C 121 7542 Google Scholar
[30]	Fang B J, Ding C L, Wu J, Du Q B, Ding J N, Zhao X Y, Xu H Q, Luo H S 2012 Eur. Phys. J. Appl. Phys. 57 30101 Google Scholar
[31]	Liu L, Li X, Wu X, Wang Y, Di W, Lin D, Zhao X, Luo H, Neumann N 2009 Appl. Phys. Lett. 95 192903 Google Scholar
[32]	Lee H J, Zhang S, Luo J, Li F, Shrout T R 2010 Adv. Funct. Mater. 20 3154 Google Scholar
[33]	Ding F, Ji H, Chen Y, Herklotz A, Dörr K, Mei Y, Rastelli A, Schmidt O G 2012 Nano Lett. 10 3453 Google Scholar
[34]	Jie W J, Hui Y Y, Zhang Y, Lau S P, Hao J H 2013 Appl. Phys. Lett. 102 223112 Google Scholar
[35]	Jie W J, Hao J H 2018 Nanoscale 10 328 Google Scholar
[36]	Park N, Kang H, Park J, Lee Y, Yun Y, Lee J H, Lee S G, Lee Y H, Suh D 2015 ACS Nano 9 10729 Google Scholar
[37]	Kato T, Hatakeyama R 2012 Nat. Nanotech. 7 651 Google Scholar
[38]	Ni Z H, Yu T, Lu Y H, Wang Y Y, Feng Y P, Shen Z X 2008 ACS Nano 2 2301 Google Scholar
[39]	Wang L, Luo J, Chen Y, Lin L, Huang X, Xue H, Gao J 2019 ACS Appl. Mater. Interface 11 17774 Google Scholar
[40]	Zhao X, Papageorgiou D G, Zhu L Y, Ding F, Young R J 2019 Nanoscale 11 14339 Google Scholar
[41]	Zhou M Q, Kang Z X, Zhu S M 2019 Nanotechnology 30 395701 Google Scholar
[42]	Zheng Y, Ni G X, Toh C T, Zeng M G, Chen S T, Yao K, Özyilmaz B 2009 Appl. Phys. Lett. 94 163505 Google Scholar
[43]	Zheng Y, Ni G X, Toh C T, Tan C Y, Yao K, Özyilmaz B 2010 Phys. Rev. Lett. 105 166602 Google Scholar
[44]	Ni G X, Zheng Y, Bae S, Tan C Y, Kahya O, Wu J, Hong B H, Yao K, Özyilmaz B 2012 ACS Nano 6 3935 Google Scholar
[45]	Wang X D, Tang M H, Chen Y, Wu G, Huang H, Zhao X, Tian B, Wang J, Sun S, Shen H, Lin T, Sun J, Meng X, Chu J 2016 Opt. Quant. Electron. 48 345 Google Scholar
[46]	Wang X, Chen Y, Wu G, Wang J, Tian B, Sun S, Shen H, Lin T, Hu W, Kang T, Tang M, Xiao Y, Sun J, Meng X, Chu J 2018 Nanotechnology 29 134002 Google Scholar
[47]	Bae S H, Kahya O, Sharma B K, Kwoon J, Cho H J, Özyilmaz B, Ahn J H 2013 ACS Nano 7 3130 Google Scholar
[48]	Park S, Kim Y, Jung H, Park J Y, Lee N, Seo Y 2017 Sci. Rep. 7 17290 Google Scholar
[49]	Kim S, Dong Y, Hossain M M, Gorman S, Towfeeq I, Gajula D, Childress A, Rao A M, Koley G 2019 ACS Appl. Mater. Interface 11 16006 Google Scholar
[50]	Silibin M V, Bystrov V S, Karpinsky D V, Nasani N, Goncalves G, Gavrilin I M, Solnyshkin A V, Marques P A A P, Singh B, Bdikin 2017 Appl. Surf. Sci. 421 42 Google Scholar
[51]	Yaqoob U, Iftekhar Uddin A S M, Chung G S 2018 Compos. Part B 136 92 Google Scholar
[52]	Chen Y, Zhang L, Liu J, Lin X, Xu W, Yue Y, Shen Q D 2019 Carbon 144 15 Google Scholar
[53]	Garain S, Jana S, Sinha T K, Mandal D 2016 ACS Appl. Mater. Interfaces 8 4532 Google Scholar
[54]	Karan S K, Mandal D, Khatua B B 2015 Nanoscale 7 10655 Google Scholar
[55]	Lu P, Wu X j, Guo W, Zeng X C 2012 Phys. Chem. Chem. Phys. 14 13035 Google Scholar
[56]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotech. 7 699 Google Scholar
[57]	Zhang X W, Xie D, Xu J L, Sun Y L, Li X, Zhang C, Dai R X, Zhao Y F, Li X M, Li X, Zhu H W 2015 IEEE Electron. Device Lett. 36 784 Google Scholar
[58]	Zhou C J, Wang X S, Raju S, Lin Z Y, Villaroman D, Huang B L, Chan H L W, Chan M, Chai Y 2015 Nanoscale 7 8695 Google Scholar
[59]	Lu Z Y, Serrao C, Khan A I, You L, Wong J C, Ye Y, Zhu H Y, Zhang X, Salahuddin S 2017 Appl. Phys. Lett. 111 023104 Google Scholar
[60]	Ganapathi K L, Rath M, Rao M S R 2019 Semicond. Sci. Technol. 34 055016 Google Scholar
[61]	Sun Y L, Xie D, Zhang X W, Xu J L, Li X M, Li X, Dai R X, Li X, Li P, Gao X S, Zhu H W 2017 Nanotechnology 28 045204 Google Scholar
[62]	Li T, Gao L M, Xie H Q, Ye L Q, Yang W D, Liu Q L, Li K 2018 Mater. Res. Express 5 066308 Google Scholar
[63]	Lipatov A, Sharma P, Gruverman A, Sinitskii A 2015 ACS Nano 9 8089 Google Scholar
[64]	Lipatov A, Li T, Vorobeva N S, Sinitskii A, Gruverman A 2019 Nano Lett. 19 3194 Google Scholar
[65]	Ko C, Lee Y, Chen Y, Suh J, Fu D, Suslu A, Lee S, Clarkson J D, Choe H S, Tongay S, Ramesh R, Wu J 2016 Adv. Mater. 28 2923 Google Scholar
[66]	Li C H, McCreary K M, Jonker B T 2016 ACS Omega 1 1075 Google Scholar
[67]	Fang H J, Lin Z Y, Wang X S, Tang C Y, Chen Y, Zhang F, Chai Y, Li Q, Yan Q F, Chan H L W, Dai J Y 2015 Opt. Express 23 251881 Google Scholar
[68]	Liu Y D, Guo J M, Yu A F, Zhang Y, Kou J Z, Zhang K, Wen R M, Zhang Y, Zhai J Y, Wang Z L 2018 Adv. Mater. 30 1704524 Google Scholar
[69]	Lee H S, Min S W, Park M K, Lee Y T, Jeon P J, Kim J H, Ryu S, Im S 2012 Small 8 3111 Google Scholar
[70]	Radisavljevic B, Radnovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotech. 6 147 Google Scholar
[71]	Kobayashi T, Hori N, Nakajima T, Kawae T 2016 Appl. Phys. Lett. 108 132903 Google Scholar
[72]	Liu L, Wang X D, Han L, Tian B, Chen Y, Wu G L, Li D, Yan M G, Wang T, Sun S, Shen H, Lin T, Sun J L, Duan C G, Wang J L, Meng X J, Chu J H 2017 AIP Adv. 7 065121 Google Scholar
[73]	Liu X Q, Liang R R, Gao G Y, Pan C F, Jiang C S, Xu Q, Luo J, Zou X M, Yang Z Y, Liao L, Wang Z L 2018 Adv. Mater. 30 1800932 Google Scholar
[74]	Wang X D, Liu C, Chen Y, Wu G J, Yan X, Huang H, Wang Peng, Tian B, Hong Z C, Wang Y T, Sun S, Shen H, Lin T, Hu W D, Tang M H, Zhou P, Wang J L, Sun J L, Meng X J, Chu J H, Li Z 2017 2 D Mater. 4 025036 Google Scholar
[75]	Wang X D, Wang P, Wang J L, Hu W D, Zhou X, Guo N, Sun H S, Shen H, Lin T, Tang M, Liao L, Jiang A, Sun J, Meng X, Chen X, Lu W, Chu J 2015 Adv. Mater. 27 6575 Google Scholar
[76]	Wu G J, Wang X D, Wang P, Huang H, Chen Y, Sun S, Shen H, Lin T, Wang J, Zhang S T, Bian L, Sun J, Meng X, Chu J 2016 Nanotechnology 27 364002 Google Scholar
[77]	Yin L, Wang Z X, Wang F, Xu K, Cheng R Q, Wen Y, Li J, He J 2017 Appl. Phys. Lett. 110 123106 Google Scholar
[78]	Chen Y, Wang X D, Wang P, Huang H, Wu G J, Tian B, Hong Z C, Wang Y T, Sun S, Shen H, Wang J H, Hu W D, Sun J L, Meng X J, Chu J H 2016 ACS Appl. Mater. Interfaces 8 32083 Google Scholar
[79]	Yin C, Wang X D, Chen Y, Li T, Sun S, Shen H, Du P, Sun J, Meng X, Chu J, Wong H F, Leung C W, Wang Z, Wang J 2018 Nanoscale 10 1727 Google Scholar
[80]	Nguyen A, Sharma P, Scott T, Preciado E, Klee V, Sun D, Lu I H, Barroso D, Kim S, Shur V Y, Akhmatkhanov A R, Gryveman A, Bartels L, Dowben P A 2015 Nano Lett. 15 3364 Google Scholar
[81]	Wen B, Zhu Y, Yudistira D, Boes A, Zhang L, Yidirim T, Liu B, Yan H, Sun X, Zhou Y, Xue Y, Zhang Y, Fu L, Mitchell A, Zhang H, Lu Y 2019 ACS Nano 13 5335 Google Scholar
[82]	Jin H, Yoon W Y, Jo W 2017 Appl. Phys. Lett. 110 191601 Google Scholar
[83]	Shin H W, Son J Y 2018 Electron. Mater. Lett. 14 59 Google Scholar
[84]	Li T, Lipatov A, Lu H, Lee H, Lee J W, Torun E, Wirtz L, Eom C B, Íñigue J, Sinitskii A, Gruverman A 2018 Nat. Comm. 9 3344 Google Scholar
[85]	Li T, Sharma P, Lipatov A, Lee H, Lee J W, Zhuravlev M Y, Paudel T R, Genenko Y A, Eom C B, Tsymbal E Y, Sinitskii A, Gruveman A 2017 Nano Lett. 17 922 Google Scholar
[86]	Li Y, Sun X Y, Xu C Y, Cao J, Sun Z Y, Zhen L 2018 Nanoscale 10 23080 Google Scholar
[87]	Shin H W, Son J Y 2019 J. Alloy. Compd. 792 673 Google Scholar
[88]	Si M W, Liao P Y, Qiu G, Duan Y, Ye P D 2018 ACS Nano 12 6700 Google Scholar
[89]	Si M W, Jiang C S, Chung W, Du Y C, Alam M A, Ye P D 2018 Nano Lett. 18 3682 Google Scholar
[90]	Zhang H, Liu C X, Qi X L, Dai X, Fang Z, Zhang S C 2009 Nat. Phys. 5 438 Google Scholar
[91]	Wang M, Liu C, Xu J P, Yang F, Miao L, Yao M Y, Gao C L, Shen C, Ma X, Chen X, Xu Z A, Liu Y, Zhang S C, Qian D, Jia J F, Xue Q K 2012 Science 336 52 Google Scholar
[92]	Zhao X W, Dong S N, Gao G Y, Xu Z X, Xu M, Yan J M, Zhao W Y, Liu Y K, Yan S Y, Zhang J X, Wang Y, Lu H Z, Li X G, Furdya J K, Luo H S, Zheng R K 2018 Quant. Mater. 3 52 Google Scholar
[93]	Yan J M, Xu Z X, Chen T W, Xu M, Zhang C, Zhao X W, Liu F, Guo L, Yan S Y, Gao G Y, Wang F F, Zhang J X, Dong S N, Li X G, Luo H S, Zhao W, Zheng R K 2019 ACS Appl. Mater. Interfaces 11 9548 Google Scholar
[94]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Technol. 9 372 Google Scholar
[95]	Zhang S, Yang J, Xu R, Wang F, Li W, Ghufran M, Zhang Y W, Yu Z, Zhang G, Qin Q, Lu Y 2014 ACS Nano 8 9590 Google Scholar
[96]	Lee Y T, Kwoon H, Kim J S, Kim H H, Lee Y J, Lim J A, Song Y W, Yi Y, Choi W K, Hwang H K, Im S 2015 ACS Nano 9 10394 Google Scholar
[97]	Xie L, Chen X, Dong Z, Yu Q, Zhao X X, Yuan G L, Zeng Z M, Wang Y J, Zhang K 2019 Adv. Electron. Mater. 5 1900458 Google Scholar

[1]	Yu Ze-Hao, Zhang Li-Fa, Wu Jing, Zhao Yun-Shan. Recent progress of 2-dimensional layered thermoelectric materials. Acta Physica Sinica, 2023, 72(5): 057301. doi: 10.7498/aps.72.20222095
[2]	Wu Ze-Fei, Huang Mei-Zhen, Wang Ning. Nonlinear Hall effects in two-dimensional moiré superlattices. Acta Physica Sinica, 2023, 72(23): 237301. doi: 10.7498/aps.72.20231324
[3]	Duan Xiu-Ming, Yi Zhi-Jun. Theoretical study on regulatory mechanism of dielectric environmental screening effects on binding energy of two-dimensional InX (X = Se, Te) exciton. Acta Physica Sinica, 2023, 72(14): 147102. doi: 10.7498/aps.72.20230528
[4]	Chen Xiao-Juan, Xu Kang, Zhang Xiu, Liu Hai-Yun, Xiong Qi-Hua. Research progress of bulk photovoltaic effect in two-dimensional materials. Acta Physica Sinica, 2023, 72(23): 237201. doi: 10.7498/aps.72.20231786
[5]	Jiang Nan, Li Ao-Lin, Qu Shui-Xian, Gou Si, Ouyang Fang-Ping. First principles study of magnetic transition of strain induced monolayer NbSi₂N₄. Acta Physica Sinica, 2022, 71(20): 206303. doi: 10.7498/aps.71.20220939
[6]	Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu. Vertical short-channel MoS₂ field-effect transistors. Acta Physica Sinica, 2022, 71(21): 218502. doi: 10.7498/aps.71.20220738
[7]	Wang Ya-Xun, Guo Di, Li Jian-Gao, Zhang Dong-Bo. Engineering of properties of low-dimensional materials via inhomogeneous strain. Acta Physica Sinica, 2022, 71(12): 127307. doi: 10.7498/aps.71.20220085
[8]	Sun Ying-Hui, Mu Cong-Yan, Jiang Wen-Gui, Zhou Liang, Wang Rong-Ming. Interface modulation and physical properties of heterostructure of metal nanoparticles and two-dimensional materials. Acta Physica Sinica, 2022, 71(6): 066801. doi: 10.7498/aps.71.20211902
[9]	Jin Xin, Tao Lei, Zhang Yu-Yang, Pan Jin-Bo, Du Shi-Xuan. Research progress of novel properties in several van der Waals ferroelectric materials. Acta Physica Sinica, 2022, 71(12): 127305. doi: 10.7498/aps.71.20220349
[10]	Bai Liang, Zhao Qi-Xu, Shen Jian-Wei, Yang Yan, Yuan Qing-Hong, Zhong Cheng, Sun Hai-Tao, Sun Zhen-Rong. Computational screening of photocathodes based on layered MXene coated Cs₃Sb heterostructures. Acta Physica Sinica, 2021, 70(21): 218504. doi: 10.7498/aps.70.20210956
[11]	Huang Yu-Hao, Zhang Gui-Tao, Wang Ru-Qian, Chen Qian, Wang Jin-Lan. Electronic structure and stability of two-dimensional bimetallic ferromagnetic semiconductor CrMoI₆. Acta Physica Sinica, 2021, 70(20): 207301. doi: 10.7498/aps.70.20210949
[12]	Wu Xiang-Shui, Tang Wen-Ting, Xu Xiang-Fan. Recent progresses of thermal conduction in two-dimensional materials. Acta Physica Sinica, 2020, 69(19): 196602. doi: 10.7498/aps.69.20200709
[13]	Long Hui, Hu Jian-Wei, Wu Fu-Gen, Dong Hua-Feng. Ultrafast pulse lasers based on two-dimensional nanomaterial heterostructures as saturable absorber. Acta Physica Sinica, 2020, 69(18): 188102. doi: 10.7498/aps.69.20201235
[14]	Li Fei, Zhang Shu-Jun, Xu Zhuo. Piezoelectricity—An important property for ferroelectrics during last 100 years. Acta Physica Sinica, 2020, 69(21): 217703. doi: 10.7498/aps.69.20200980
[15]	Lu Xiao-Mei, Huang Feng-Zhen, Zhu Jin-Song. Domains in ferroelectrics: formation, structure, mobility and related properties. Acta Physica Sinica, 2020, 69(12): 127704. doi: 10.7498/aps.69.20200312
[16]	Tan Cong-Bing, Zhong Xiang-Li, Wang Jin-Bin. Polar topological structures in ferroelectric materials. Acta Physica Sinica, 2020, 69(12): 127702. doi: 10.7498/aps.69.20200311
[17]	Gao Rong-Zhen, Wang Jing, Wang Jun-Sheng, Huang Hou-Bing. Investigation into electrocaloric effect of different types of ferroelectric materials by Landau-Devonshire theory. Acta Physica Sinica, 2020, 69(21): 217801. doi: 10.7498/aps.69.20201195
[18]	Zhu Li-Feng, Pan Wen-Yuan, Xie Yan, Zhang Bo-Ping, Yin Yang, Zhao Gao-Lei. Effect of regulation of defect ion on ferroelectric photovoltaic characteristics of BiFeO₃-BaTiO₃ based perovskite materials. Acta Physica Sinica, 2019, 68(21): 217701. doi: 10.7498/aps.68.20190996
[19]	Xu Meng, Yan Jian-Min, Xu Zhi-Xue, Guo Lei, Zheng Ren-Kui, Li Xiao-Guang. Progresses of magnetoelectric composite films based on PbMg1/3Nb2/3O3-PbTiO3 single-crystal substrates. Acta Physica Sinica, 2018, 67(15): 157506. doi: 10.7498/aps.67.20180911
[20]	Wu Hua-Ping, Ling Huan, Zhang Zheng, Li Yan-Biao, Liang Li-Hua, Chai Guo-Zhong. Research progress on photocatalytic activity of ferroelectric materials. Acta Physica Sinica, 2017, 66(16): 167702. doi: 10.7498/aps.66.167702

Catalog

Vol. 69, Issue 1 - 2020-01-05

Metrics

Abstract views: 36263
PDF Downloads: 2598
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板