Regulation and control of Schottky barrier in graphene/MoSe<sub>2</sub> heteojuinction by asymmetric oxygen doping

Hao Guo-Qiang; Zhang Rui; Zhang Wen-Jing; Chen Na; Ye Xiao-Jun; Li Hong-Bo

doi:10.7498/aps.71.20210238

Abstract

Although graphene-based heterostructures exhibit excellent intrinsic properties for device scaling, fabricating low Schottky barrier is still a great challenge to the electrical transport behaviors of nanoelectronic devices. Exploring excellent materials for electronic devices are a research hotspot at present. Graphene not only exhibits excellent physical strength and specific surface area, but also presents high carrier mobility and thermal conductivity. Therefore, graphene has been developed in many fields such as energy, catalysis, etc. However, graphene is a special material with zero band gap, and its electrons and holes are easy to compound, which seriously hinders its development in the applications of electronic and optoelectronic devices. Two-dimensional transition metal dichalcogenides (TMDs) have the advantages of controllable band gap properties, which makes them have a good development in logic circuits and photodetectors. As one of TMD_S, MoSe₂ possesses the advantages of narrower band gap, better electron hole separation and stronger oxidation resistance in the environment. Therefore, the design of graphene and MoSe₂ heterostructures is an ideal choice for a new generation of nanoelectronic devices. Here, we investigate systematically the effects of asymmetric O doping on the electronic properties and Schottky barrier of graphene/MoSe_2(1–x)O_2x heterostructure for the first time by first-principles calculations incorporating semiempirical dispersion-correction scheme. The results indicate that graphene and MoSe₂ monolayer can form a stable van der Waals heterostructure with preserving their own intrinsic properties. In addition, an n-type schottky contact with a barrier height of 0.558 eV is obtained. Further, it is found that the type and the height of the Schottky barrier can be controlled by changing the concentration and sites of the O dopant at interface. By increasing the concentration of the O dopant inside the interface, the transition from an n-type Schottky contact to an Ohmic contact can be realized, and a low n-type Schottky barrier is gained with increasing the concentration of the O dopant outside the interface for highly efficient charge transfer. The barrier height of heterostructure decreases from 0.558 eV to 0.112 eV when the O dopant is doped on the outer interface. Finally, as a complement to previous results, it is confirmed that the redistribution of interfacial charges leads the Fermi level to shift, and thus determining the type and the height of Schottky barrier. This study may provide theoretical guidance for designing and manufacturing the MoSe₂-based nano field effect transistors.

Keywords:

Authors and contacts

1.
School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
2.
School of Chemistry and Materials Science, University of Science and Technology of China, Hefei 230026, China

Corresponding author: Zhang Rui, zhangrui-nadia@outlook.com ; Li Hong-Bo, lihongbo@ecust.edu.cn

Funds: Project supported by the Shanghai Committee of Science and Technology, China (Grant No. 17DZ1201405)

FullText HTML : translate this paragraph

References

[1]	Geim A K 2009 Science 324 1530 Google Scholar
[2]	Novoselov K S, Jiang Z, Zhang Y, et al. 2007 Science 315 1379 Google Scholar
[3]	Tonndorf P, Schmidt R, Böttger P, et al. 2013 Opt. express 21 4908 Google Scholar
[4]	Rathi S, Lee I, Lim D, Wang J, Ochiai Y, Aoki N, Watanabe K, Taniguchi T, Lee G H, Yu Y J, Kim P, Kim G H 2015 Nano Lett. 15 5017 Google Scholar
[5]	Ross J S, Wu S, Yu H, Ghimire N J, Jones A M, Aivazian G, Yan J, Mandrus D G, Xiao D, Yao W, Xu X 2013 Nat. Commun. 4 1474 Google Scholar
[6]	Tongay S, Zhou J, Ataca C, Lo K, Matthews T S, Li J, Grossman J C, Wu J 2012 Nano Lett. 12 5576 Google Scholar
[7]	Larentis S, Fallahazad B, Tutuc E 2012 Appl. Phys. Lett. 101 223104 Google Scholar
[8]	Liu Y, Guo J, Zhu E, Liao L, Lee S J, Ding M, Shakir I, Gambin V, Huang Y, Duan X 2018 Nature 557 696 Google Scholar
[9]	Bardeen J 1947 Phys. Rev. 71 717 Google Scholar
[10]	Miedema A R, Chatel P F, Boer F R 1980 Physica 100 1 Google Scholar
[11]	Çakır D, Sevik C, Peeters F 2014 J. Mater. Chem. C 2 9842 Google Scholar
[12]	Hong X, Kim J, Shi S F, Zhang Y, Jin C, Sun Y, Tongay S, Wu J, Zhang Y, Wang F 2014 Nat. Nanotechnol. 9 682 Google Scholar
[13]	Vu T V, Hieu N V, Phuc H V, Hieu N N, Bui H D, Idrees M, Amin B, Nguyen C V 2020 Appl. Surf. Sci. 507 145036 Google Scholar
[14]	郭丽娟, 胡吉松, 马新国, 项炬 2019 68 097101 Google Scholar Guo L J, Hu J S, Ma X G, Xiang J 2019 Acta Phys. Sin. 68 097101 Google Scholar
[15]	Sata Y, Moriya R, Morikawa S, Yabuki N, Masubuchi S, Machida T 2015 Appl. Phys. Lett. 107 023109 Google Scholar
[16]	Sun Z, Chu H, Li Y, Zhao S, Li G, Li D 2019 Mater. Design 183 108129 Google Scholar
[17]	Hu J, Duan W, He H, Lv H, Huang C, Ma X 2019 J. Mater. Chem. C 7 7798 Google Scholar
[18]	Weng J, Gao S P 2018 Phys. Chem. Chem. Phys. 20 26453 Google Scholar
[19]	Perdew J, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865 Google Scholar
[20]	Tkatchenko A, Scheffler M 2009 Phys. Rev. Lett. 102 073005 Google Scholar
[21]	Chan K, Neaton J, Cohen M 2008 Phys. Rev. B 77 235430 Google Scholar
[22]	Saha P, Ghosh B, Mazumder A, Mukherjee G D 2020 Mater. Res. Express 7 025902 Google Scholar
[23]	Zhang R, Hao G, Ye X, Gao S, Li H 2020 Phys. Chem. Chem. Phys. 22 23699 Google Scholar
[24]	Hieu N N, Phuc H V, Ilyasov V V, Chien N D, Poklonski N A, Van Hieu N, Nguyen C V 2017 J. Appl. Phys. 122 104301 Google Scholar
[25]	Hu J, Ji G, Ma X, He H, Huang C 2018 Appl. Surf. Sci. 440 35 Google Scholar
[26]	Zhang R, Hao G, Li H, Ye X, Gao S, Yuan X, Liu C 2020 J. Phys. Chem. Solids 143 109466 Google Scholar
[27]	Peng Q, Wang Z, Sa B, Wu B, Sun Z 2016 Sci. Rep-UK 6 31994 Google Scholar
[28]	Ugeda M, Bradley A, Shi S F, Da Jornada F, Zhang Y, Qiu D, Mo S K, Hussain Z, Shen Z X, Wang F, Louie S, Crommie M 2014 Nat. Mater. 13 1091 Google Scholar
[29]	危阳, 马新国, 祝林, 贺华, 黄楚云 2017 66 087101 Google Scholar Wei Y, Ma X G, Zhu L, He H, Huang C Y 2017 Acta Phys. Sin. 66 087101 Google Scholar
[30]	Bjorkman T, Gulans A, Krasheninnikov A V, Nieminen R M 2012 Phys. Rev. Lett. 108 235502 Google Scholar
[31]	Liu B, Wu L, Zhao Y, Wang L, Cai M 2016 RSC Adv. 6 60271 Google Scholar
[32]	Ebnonnasir A, Narayanan B, Kodambaka S, Ciobanu C V 2014 Appl. Phys. Lett. 105 031603 Google Scholar
[33]	Xu P, Tang Q, Zhou Z 2013 Nanotechnology 24 305401 Google Scholar
[34]	Du A, Sanvito S, Li Z, Wang D, Jiao Y, Liao T, Sun Q, Ng Y H, Zhu Z, Amal R 2012 J. Am. Chem. Soc. 134 4393 Google Scholar
[35]	Zhao Y, Lee H J, Choi W, Fei W, Lee C J 2017 RSC Adv. 7 27969 Google Scholar
[36]	Zhang R, Hao G, Ye X, Zhang W, Li H 2021 J. Appl. Phys. 129 174302 Google Scholar

Cited By

图 1 (a) 石墨烯4 × 4超胞和二硒化钼3 × 3超胞组成的异质结俯视图; (b) 石墨烯5 × 5超胞和二硒化钼4 × 4超胞组成的异质结俯视图; (c) PBE和LDA两种方法下层间距与石墨烯/二硒化钼异质结结合能的关系. 两个箭头表示两种方法下最低能量时的层间距

Figure 1. (a) Top views of heterostructure composed of 4 × 4 lateral periodicity of graphene and 3 × 3 lateral periodicity of MoSe₂ monolayer; (b) top views of heterostructure composed of 5 × 5 lateral periodicity of graphene and 4 × 4 lateral periodicity of MoSe₂ monolayer; (c) dependence of E_coh in graphene/MoSe₂ heterostructure on the interlayer distance under LDA and PBE methods. The two arrows indicate the d with the lowest E_coh for LDA and PBE methods.

DownLoad: Full-Size Img PowerPoint

图 2 能带结构图　(a) 石墨烯; (b) 单层二硒化钼; (c) 石墨烯/二硒化钼异质结. (d) 石墨烯/二硒化钼异质结的总态密度和分态密度; (e) 异质结中二硒化钼的分态密度; (f) 异质结中石墨烯的分态密度. 费米能级设置为零, 用红色虚线表示

Figure 2. Band structures of (a) graphene; (b) MoSe₂ monolayer; (c) graphene/MoSe₂ heterostructure; (d) total density of states (DOS) and partial density of states (PDOS) of graphene/MoSe₂ heterostructure; (e) PDOS of MoSe₂ in the heterostructure; (f) PDOS of graphene in the heterostructure. The Fermi level is set to zero, denoted as a red dashed line.

DownLoad: Full-Size Img PowerPoint

图 3 静电势　(a) 石墨烯; (b) 单层二硒化钼; (c) 石墨烯/二硒化钼异质结(红色和紫色虚线分别代表费米能级和真空能级); (d) 石墨烯和单层二硒化钼接触前和接触后的带边位置图

Figure 3. Electrostatic potentials of (a) graphene; (b) MoSe₂ monolayer; (c) graphene/MoSe₂ heterostructure(red and purple dashed lines represent the Fermi level and vacuum level, respectively); (d) energy level lineup diagrams for graphene and MoSe₂ monolayer before and after contact.

DownLoad: Full-Size Img PowerPoint

图 4 石墨烯/二硒化钼异质结的三维电荷密度差分　(a) 俯视图; (b) 侧视图; (c) 石墨烯/二硒化钼异质结的平面平均电荷密度差分

Figure 4. Three-dimensional charge density difference diagram of graphene/MoSe₂ heterostructure: (a) Top view and (b) side view; (c) plane-averaged charge density difference of graphene/MoSe₂ heterostructure.

DownLoad: Full-Size Img PowerPoint

图 5 不同掺杂浓度的Gr/MoSe_2(1–x)O_2x异质结侧视图　(a)−(g) 对应界面内氧掺杂浓度分别为11%, 22%, 33%, 44%, 56%, 67%和78%; (h)−(n) 对应界面外氧掺杂浓度分别为11%, 22%, 33%, 44%, 56%, 67%和78%. 浅蓝色, 黄色, 灰色和红色的球分别表示钼, 硒, 碳和氧原子

Figure 5. Side views of the Gr/WSe_2(1–x)O_2x heterostructures with different concentrations of the oxygen dopant: (a)−(g) show the O doping on the inner interface are 11%, 22%, 33%, 44%, 56%, 67% and 78%, respectively. (h)−(n) represent the oxygen doping on the outer interface are 11%, 22%, 33%, 44%, 56%, 67% and 78%, respectively. The light blue, yellow, grey and red balls represent Mo, Se, C and O atoms, respectively.

DownLoad: Full-Size Img PowerPoint

图 6 不同氧掺杂浓度下Gr/MoSe_2(1–x)O_2x异质结的能带结构图　(a)−(g) 对应界面内氧掺杂浓度分别为11%, 22%, 33%, 44%, 56%, 67%和78%; (h)−(n) 对应界面外O掺杂浓度分别为11%, 22%, 33%, 44%, 56%, 67%和78%. 费米能级用红色虚线标记, 并设置为零

Figure 6. The band structures of the Gr/MoSe_2(1–x)O_2x heterostructure under asymmetric oxygen doping: (a)−(g) Show the oxygen doping on the inner interface are 11%, 22%, 33%, 44%, 56%, 67% and 78%, respectively; (h)−(n) represent the oxygen doping on the outer interface are 11%, 22%, 33%, 44%, 56%, 67% and 78%, respectively. The Fermi level is marked with a dashed red line and set to zero.

DownLoad: Full-Size Img PowerPoint

图 7 不同氧掺杂浓度下　(a) Gr/MoSe_2(1–x)O_2x异质结的肖特基势垒高度; (b) Gr/MoSe_2(1–x)O_2x异质结的功函数; (c) Gr/MoSe_2(1–x)O_2x异质结沿着Z方向氧掺杂在内表面和外表面的平面平均电荷密度差分图

Figure 7. Dependence of (a) the SBH and (b) work function in Gr/MoSe_2(1–x)O_2x heterostructure on the oxygen doping concentration; (c) calculated planar electron density differences of the Gr/MoSe_2(1–x)O_2x heterostructure along the Z direction in different oxygen doping concentrations inside and outside the interface.

DownLoad: Full-Size Img PowerPoint

表 1 不同氧原子掺杂浓度的Gr/MoSe_2(1–x)O_2x异质结失配率

Table 1. Mismatch ratio of Gr/MoS_2(1–x)O_2x heterosstructure with different oxygen doping concentration

氧原子掺杂浓度/%	晶格常数/Å (a = b)		失配率/%
氧原子掺杂浓度/%	MoSe_2(1–x)O_2x	Graphene	失配率/%
0	9.846	9.838	0.08
11	9.721	9.838	1.19
22	9.681	9.838	1.60
33	9.552	9.838	2.91
44	9.478	9.838	3.65
56	9.424	9.838	4.21
67	9.359	9.838	4.87
78	9.404	9.838	4.41
89	9.342	9.838	5.04
100	9.267	9.838	5.80

DownLoad: CSV

map

[1]	Geim A K 2009 Science 324 1530 Google Scholar
[2]	Novoselov K S, Jiang Z, Zhang Y, et al. 2007 Science 315 1379 Google Scholar
[3]	Tonndorf P, Schmidt R, Böttger P, et al. 2013 Opt. express 21 4908 Google Scholar
[4]	Rathi S, Lee I, Lim D, Wang J, Ochiai Y, Aoki N, Watanabe K, Taniguchi T, Lee G H, Yu Y J, Kim P, Kim G H 2015 Nano Lett. 15 5017 Google Scholar
[5]	Ross J S, Wu S, Yu H, Ghimire N J, Jones A M, Aivazian G, Yan J, Mandrus D G, Xiao D, Yao W, Xu X 2013 Nat. Commun. 4 1474 Google Scholar
[6]	Tongay S, Zhou J, Ataca C, Lo K, Matthews T S, Li J, Grossman J C, Wu J 2012 Nano Lett. 12 5576 Google Scholar
[7]	Larentis S, Fallahazad B, Tutuc E 2012 Appl. Phys. Lett. 101 223104 Google Scholar
[8]	Liu Y, Guo J, Zhu E, Liao L, Lee S J, Ding M, Shakir I, Gambin V, Huang Y, Duan X 2018 Nature 557 696 Google Scholar
[9]	Bardeen J 1947 Phys. Rev. 71 717 Google Scholar
[10]	Miedema A R, Chatel P F, Boer F R 1980 Physica 100 1 Google Scholar
[11]	Çakır D, Sevik C, Peeters F 2014 J. Mater. Chem. C 2 9842 Google Scholar
[12]	Hong X, Kim J, Shi S F, Zhang Y, Jin C, Sun Y, Tongay S, Wu J, Zhang Y, Wang F 2014 Nat. Nanotechnol. 9 682 Google Scholar
[13]	Vu T V, Hieu N V, Phuc H V, Hieu N N, Bui H D, Idrees M, Amin B, Nguyen C V 2020 Appl. Surf. Sci. 507 145036 Google Scholar
[14]	郭丽娟, 胡吉松, 马新国, 项炬 2019 68 097101 Google Scholar Guo L J, Hu J S, Ma X G, Xiang J 2019 Acta Phys. Sin. 68 097101 Google Scholar
[15]	Sata Y, Moriya R, Morikawa S, Yabuki N, Masubuchi S, Machida T 2015 Appl. Phys. Lett. 107 023109 Google Scholar
[16]	Sun Z, Chu H, Li Y, Zhao S, Li G, Li D 2019 Mater. Design 183 108129 Google Scholar
[17]	Hu J, Duan W, He H, Lv H, Huang C, Ma X 2019 J. Mater. Chem. C 7 7798 Google Scholar
[18]	Weng J, Gao S P 2018 Phys. Chem. Chem. Phys. 20 26453 Google Scholar
[19]	Perdew J, Burke K, Ernzerhof M 1996 Phys. Rev. Lett. 77 3865 Google Scholar
[20]	Tkatchenko A, Scheffler M 2009 Phys. Rev. Lett. 102 073005 Google Scholar
[21]	Chan K, Neaton J, Cohen M 2008 Phys. Rev. B 77 235430 Google Scholar
[22]	Saha P, Ghosh B, Mazumder A, Mukherjee G D 2020 Mater. Res. Express 7 025902 Google Scholar
[23]	Zhang R, Hao G, Ye X, Gao S, Li H 2020 Phys. Chem. Chem. Phys. 22 23699 Google Scholar
[24]	Hieu N N, Phuc H V, Ilyasov V V, Chien N D, Poklonski N A, Van Hieu N, Nguyen C V 2017 J. Appl. Phys. 122 104301 Google Scholar
[25]	Hu J, Ji G, Ma X, He H, Huang C 2018 Appl. Surf. Sci. 440 35 Google Scholar
[26]	Zhang R, Hao G, Li H, Ye X, Gao S, Yuan X, Liu C 2020 J. Phys. Chem. Solids 143 109466 Google Scholar
[27]	Peng Q, Wang Z, Sa B, Wu B, Sun Z 2016 Sci. Rep-UK 6 31994 Google Scholar
[28]	Ugeda M, Bradley A, Shi S F, Da Jornada F, Zhang Y, Qiu D, Mo S K, Hussain Z, Shen Z X, Wang F, Louie S, Crommie M 2014 Nat. Mater. 13 1091 Google Scholar
[29]	危阳, 马新国, 祝林, 贺华, 黄楚云 2017 66 087101 Google Scholar Wei Y, Ma X G, Zhu L, He H, Huang C Y 2017 Acta Phys. Sin. 66 087101 Google Scholar
[30]	Bjorkman T, Gulans A, Krasheninnikov A V, Nieminen R M 2012 Phys. Rev. Lett. 108 235502 Google Scholar
[31]	Liu B, Wu L, Zhao Y, Wang L, Cai M 2016 RSC Adv. 6 60271 Google Scholar
[32]	Ebnonnasir A, Narayanan B, Kodambaka S, Ciobanu C V 2014 Appl. Phys. Lett. 105 031603 Google Scholar
[33]	Xu P, Tang Q, Zhou Z 2013 Nanotechnology 24 305401 Google Scholar
[34]	Du A, Sanvito S, Li Z, Wang D, Jiao Y, Liao T, Sun Q, Ng Y H, Zhu Z, Amal R 2012 J. Am. Chem. Soc. 134 4393 Google Scholar
[35]	Zhao Y, Lee H J, Choi W, Fei W, Lee C J 2017 RSC Adv. 7 27969 Google Scholar
[36]	Zhang R, Hao G, Ye X, Zhang W, Li H 2021 J. Appl. Phys. 129 174302 Google Scholar

[1]	Li Jing-Hui, Cao Sheng-Guo, Han Jia-Ning, Li Zhan-Hai, Zhang Zhen-Hua. Electrical contact properties of 2D metal-semiconductor heterojunctions composed of different phases of NbS₂ and GeS₂. Acta Physica Sinica, 2024, 73(13): 137102. doi: 10.7498/aps.73.20240530
[2]	Tang Jia-Xin, Li Zhan-Hai, Deng Xiao-Qing, Zhang Zhen-Hua. Electrical contact characteristics and regulatory effects of GaN/VSe₂ van der Waals heterojunction. Acta Physica Sinica, 2023, 72(16): 167101. doi: 10.7498/aps.72.20230191
[3]	Dong Xiao. Density functional theory on reaction mechanism between p-doped LiNH₂ clusters and LiH and a new hydrogen storage and desorption mechanism. Acta Physica Sinica, 2023, 72(15): 153101. doi: 10.7498/aps.72.20230374
[4]	Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica, 2022, 71(5): 058102. doi: 10.7498/aps.71.20211796
[5]	Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode. Acta Physica Sinica, 2022, 71(20): 207302. doi: 10.7498/aps.71.20220320
[6]	Zhang Fang, Jia Li-Qun, Sun Xian-Ting, Dai Xian-Qi, Huang Qi-Xiang, Li Wei. Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field. Acta Physica Sinica, 2020, 69(15): 157302. doi: 10.7498/aps.69.20191987
[7]	Ma Hao-Hao, Zhang Xian-Bin, Wei Xu-Yan, Cao Jia-Meng. Theoretical study on Schottky regulation of WSe₂/graphene heterostructure doped with nonmetallic elements. Acta Physica Sinica, 2020, 69(11): 117101. doi: 10.7498/aps.69.20200080
[8]	Guo Li-Juan, Hu Ji-Song, Ma Xin-Guo, Xiang Ju. Interfacial interaction and Schottky contact of two-dimensional WS₂/graphene heterostructure. Acta Physica Sinica, 2019, 68(9): 097101. doi: 10.7498/aps.68.20190020
[9]	Xu Feng^1\2, Yu Guo-Hao, Deng Xu-Guang, Li Jun-Shuai, Zhang Li, Song Liang, Fan Ya-Ming, Zhang Bao-Shun. Current transport mechanism of Schottky contact of Pt/Au/n-InGaN. Acta Physica Sinica, 2018, 67(21): 217802. doi: 10.7498/aps.67.20181191
[10]	Li Dan, Liang Jun-Wu, Liu Hua-Wei, Zhang Xue-Hong, Wan Qiang, Zhang Qing-Lin, Pan An-Lian. Asymmetric waveguide and the dual-wavelength stimulated emission for CdS/CdS0.48Se0.52 axial nanowire heterostructures. Acta Physica Sinica, 2017, 66(6): 064204. doi: 10.7498/aps.66.064204
[11]	Wu Kong-Ping, Sun Chang-Xu, Ma Wen-Fei, Wang Jie, Wei Wei, Cai Jun, Chen Chang-Zhao, Ren Bin, Sang Li-Wen, Liao Mei-Yong. Interface electronic structure and the Schottky barrier at Al-diamond interface: hybrid density functional theory HSE06 investigation. Acta Physica Sinica, 2017, 66(8): 088102. doi: 10.7498/aps.66.088102
[12]	Tao Peng-Cheng, Huang Yan, Zhou Xiao-Hao, Chen Xiao-Shuang, Lu Wei. First principles investigation of the tuning in metal-MoS2 interface induced by doping. Acta Physica Sinica, 2017, 66(11): 118201. doi: 10.7498/aps.66.118201
[13]	Yang Zhen-Qing, Bai Xiao-Hui, Shao Chang-Jin. Density functional theory studies of (TiO2)12 quantum ring and its electronic properties when doped with transition metal compounds. Acta Physica Sinica, 2015, 64(7): 077102. doi: 10.7498/aps.64.077102
[14]	Liu Fu-Ti, Cheng Yan, Chen Xiang-Rong, Cheng Xiao-Hong, Zeng Zhi-Qiang. Theoretical calculation of electron transport properties of the Au-Si60-Au molecular junctions. Acta Physica Sinica, 2014, 63(17): 177304. doi: 10.7498/aps.63.177304
[15]	Shi Da-Wei, Wu Mei-Ling, Yang Chang-Ping, Ren Chun-Ling, Xiao Hai-Bo, Wang Kai-Ying. AC properties of Pr0.7Ca0.3MnO3 ceramics. Acta Physica Sinica, 2013, 62(2): 026201. doi: 10.7498/aps.62.026201
[16]	Zhao Shou-Ren, Huang Zhi-Peng, Sun Lei, Sun Peng-Chao, Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Wang Shan-Li, Chu Jun-Hao. A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells. Acta Physica Sinica, 2013, 62(16): 168801. doi: 10.7498/aps.62.168801
[17]	Xie Xiao-Dong, Hao Yu-Ying, Zhang Ri-Guang, Wang Bao-Jun. Lithium-doped tris (8-hydroxyquinoline) aluminum studied by density functional theory. Acta Physica Sinica, 2012, 61(12): 127201. doi: 10.7498/aps.61.127201
[18]	Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao. Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure. Acta Physica Sinica, 2010, 59(12): 8856-8861. doi: 10.7498/aps.59.8856
[19]	Wu Kai-Shun, Long Xing-Teng, Dong Jian-Wen, Chen Di-Hu, Wang He-Zhou. Phase properties of photonic crystal heterostructure and its applications. Acta Physica Sinica, 2008, 57(10): 6381-6385. doi: 10.7498/aps.57.6381
[20]	LI HONG-WEI, WANG TAI-HONG. THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica, 2001, 50(12): 2501-2505. doi: 10.7498/aps.50.2501

Catalog

Vol. 71, Issue 1 - 2022-01-05

Metrics

Abstract views: 7091
PDF Downloads: 188
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Regulation and control of Schottky barrier in graphene/MoSe₂ heteojuinction by asymmetric oxygen doping

Abstract

Authors and contacts

Corresponding author: Zhang Rui, zhangrui-nadia@outlook.com ; Li Hong-Bo, lihongbo@ecust.edu.cn

FullText HTML : translate this paragraph

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Regulation and control of Schottky barrier in graphene/MoSe2 heteojuinction by asymmetric oxygen doping

Abstract

Authors and contacts

Corresponding author: Zhang Rui, zhangrui-nadia@outlook.com ; Li Hong-Bo, lihongbo@ecust.edu.cn

FullText HTML : translate this paragraph

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About

Regulation and control of Schottky barrier in graphene/MoSe₂ heteojuinction by asymmetric oxygen doping