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Graphene is a planar two-dimensional material composed of sp2-bonded carbon atoms with extraordinary electrical, optical and mechanical properties, and considered as one of the revolutionary electronic component materials in the future. Some studies have shown that the inert gas ion irradiation as a defect introducing technique can change the structure and properties of graphene without introducing additional effects. In this paper, the 5.4 keV He ion irradiation at the dose ranging from 0.7 × 1013 cm–2 to 2.5 × 1013 cm–2 has a strong effect on graphene deposited by CVD technology. The X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (Raman) and semi-conductor parameter analysis instrument are used to study the changes in the microstructure and electrical properties of graphene before and after irradiation. Detailed analysis shows that the defect density increases gradually with the irradiation dose increasing. Raman spectrum shows that when the irradiation dose increases to 1.6 × 1013 cm–2, the value of ID/IG begins to decrease, and XPS shows that the irradiation changes the structure of C chemical bond in graphene which causes the bonding state of C—C sp2 to be destroyed and partly converted into the C—C sp3 bonding state. Therefore, the structure of graphene begins to transform from nano-crystalline structure into sp3 amorphous structure. Simultaneously, increasing defects causes the graphene conductivity to continuously decrease, and also gives rise to the electrical transition from defect scattering mechanism based on Boltzmann transport to the hopping transport. The positive voltage direction offset of Vdirac increases nearly in direct proportion, which is due to the enhancement of graphene’s p-type doping effect caused by defects and adsorbed impurities. This work conduces to the understanding the mechanism of He ion interaction with graphene, and also provides an effective way of controlling the electronic properties.
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Keywords:
- graphene /
- He ion irradiation /
- microstructures /
- electrical properties
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图 1 石墨烯样品XPS C1 s峰谱图 (a)未辐照; (b) 0.7 × 1013 He+/cm2; (c) 1.6 × 1013 He+/cm2; (d) 2.5 × 1013 He+/cm2
Figure 1. XPS C1 s peak spectra of graphene samples: (a) Unirradiated; (b) 0.7 × 1013 He+/cm2; (c) 1.6 × 1013 He+/cm2; (d) 2.5 × 1013 He+/cm2.
图 2 未辐照石墨烯Raman光谱图
Figure 2. The Raman spectra of unirradiated graphene.
图 3 He+辐照前后石墨烯Raman光谱图
Figure 3. The Raman spectra of graphene before and after He+ irradiation.
图 4 Raman峰强ID/IG, I2D/IG比值与辐照剂量的关系
Figure 4. The relationship between Raman peak strength ID/IG, I2D/IG ratio and irradiation dose.
图 5 不同辐照剂量下电导率随栅极电压变化曲线
Figure 5. Electrical conductivity versus gate voltage at different irradiation doses.
图 6 狄拉克电压偏移量与辐照剂量的关系
Figure 6. The relation between Dirac voltage variation and irradiation dose.
表 1 辐照前后石墨烯样品C1 s峰面积比
Table 1. C1 s peak area ratio of graphene samples before and after irradiation.
辐照剂量 C-C sp2 C—C sp3 C—O—H C—O—C O—C=O 未辐照 0.52 0.19 0.10 0.09 0.10 0.7 × 1013 He+/cm2 0.50 0.30 0.13 0.05 0.02 1.6 × 1013 He+/cm2 0.37 0.32 0.15 0.10 0.06 2.5 × 1013 He+/cm2 0.28 0.35 0.20 0.12 0.05 
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[1] Karimi H, Yusof R, Rahmani R, Ahmadi M T 2013 J. Nanomater. 2013 789454
Google Scholar
[2] Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
Google Scholar
[3] 张辉, 蔡晓明, 郝振亮, 阮子林, 卢建臣, 蔡金明 2017 66 218103
Google Scholar
Zhang H, Cai X M, Hao Z L, Ruan Z L, Lu J C, Cai J M 2017 Acta Phys. Sin. 66 218103
Google Scholar
[4] Li M, Qu G F, Wang Y Z, Zhu Z S, Shi M G, Zhou M L, Liu D, Xu Z X, Song M J, Zhang J, Bai F, Liao X D, Han J F 2019 Chin. Phys. B 28 093401
Google Scholar
[5] Zeng J, Liu J, Yao H J, Zhai P F, Zhang S X, Guo H, Hu P P, Duan J L, Mo D, Hou M D, Sun Y M 2016 Carbon 100 16
Google Scholar
[6] Kumar S, Kumar A, Tripathi A, Tyagi C, AvasthiCitation D K 2018 J. Appl. Phys. 123 161533
Google Scholar
[7] Hang S J, Moktadir Z, Mizuta H 2014 Carbon 72 233
Google Scholar
[8] Tapasztó L, Dobrik G, Nemes-Incze P, Vertesy G, Lambin Ph, Biró L P 2008 Phys. Rev. B 78 233407
Google Scholar
[9] Lucchese M M, Stavale F, Ferreira E M, Vilani C, Moutinho M, Capaz R B, Achete C, Jorio A 2010 Carbon 48 1592
Google Scholar
[10] Al-Harthi S H, Kara’a A, Hysen T, Elzain M, Al-Hinai A T, Myint M T Z 2012 Appl. Phys. Lett. 101 213107
Google Scholar
[11] Chen J H, Cullen W G, Jang C, Fuhrer M S, Williams E D 2009 Phys. Rev. Lett. 102 236805
Google Scholar
[12] Amor S B, Baud G, Jacquet M, Nansé G, Fioux P, Nardin M 2000 Appl. Surf. Sci. 153 172
Google Scholar
[13] 王淑芬 2018 博士学位论文 (合肥: 中国科学技术大学)
Wang S F 2018 Ph. D. Dissertation (Hefei: University of Science and Technology of China) (in Chinese)
[14] 曾健 2014 博士学位论文 (兰州: 兰州大学)
Zeng J 2014 Ph. D. Dissertation (Lanzhou: Lanzhou University) (in Chinese)
[15] Ferrari A C, Robertson J 2000 Phys. Rev. B 61 14095
Google Scholar
[16] 吴娟霞, 徐华, 张锦 2014 化学学报 72 301
Google Scholar
Wu J X, Xiu H, Zhang J 2014 Acta Chim. Sin. 72 301
Google Scholar
[17] Kim J H, Hwang J H, Suh J, Tongay S, Kwon S, Hwang C C, Wu J Q, Park J Y 2013 Appl. Phys. Lett. 103 171604
Google Scholar
[18] Wang H, Wu Y, Cong C, Shang J, Yu T 2010 ACS Nano 4 7221
Google Scholar
[19] Pimenta M A, Dresselhaus G, Dresselhaus M S, Cancado L G, Jorio A, Saito R 2007 Phys. Chem. Chem. Phys. 9 1276
Google Scholar
[20] Ferrari A C 2007 Solid State Commun. 143 47
Google Scholar
[21] 白冰 2016 博士学位论文 (镇江: 江苏大学)
Bai B 2016 Ph. D. Dissertation (Zhenjiang: Jiangsu University) (in Chinese)
[22] 宋航, 刘杰, 陈超, 巴龙 2019 68 097301
Google Scholar
Song H, Liu J, Chen C, Ba L 2019 Acta Phys. Sin. 68 097301
Google Scholar
[23] Guermoune A, Chari T, Popescu F, Sabri S S, Guillemette J, Skulason H S, Szkopek T, Siaj M 2011 Carbon 49 4204
Google Scholar
[24] Yuan H Y, Chang S, Bargatin I 2015 Nano Lett. 15 6475
[25] Stauber T, Peres N M R, Guinea F 2007 Phys. Rev. B 76 205423
Google Scholar
[26] Chen C F, Park C H, Boudouris B W, Horng J, Geng B, Girit C, Zettl A, Crommie M F, Segalman R A, Louie S G, Wang F 2011 Nature 471 617
Google Scholar
[27] Wang Q, Liu S, Ren N F 2014 Appl. Phys. Lett. 105 133506
Google Scholar
[28] Zhou Y B, Liao Z M, Wang Y F, Duesberg G S, Xu J, Fu Q, Wu X S, Yu D P 2010 J. Chem. Phys. 133 234703
Google Scholar
[29] Cancado L G, Jorio A, Ferreira E H M, Stavale F, Achete C A, Capaz R B, Moutinho M V O, Lombardo A, Kulmala T S, Ferrari A C 2011 Nano Lett. 11 3190
Google Scholar
[30] Zhou Y B, Han B H, Liao Z M, Wu H C, Yu D P 2011 Appl. Phys. Lett. 98 222502
Google Scholar
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