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石墨烯因其奇特的能带结构和优异的物理性能而成为近年来大家研究的热点, 但是目前单层石墨烯的质量与尺寸制约了其实际应用的发展. 本文采用常压化学气相沉积(CVD)方法, 基于铜箔衬底, 利用甲烷作为碳源制备了高质量大面积的单层与多层石墨烯. 研究发现: 高温度、稀薄的甲烷浓度、较短的生长时间以及合适的气体流速是制备高质量、大面积石墨烯的关键. Raman光谱, 扫描电子显微镜、透射电子显微镜等表征结果表明: 制备的石墨烯主要为单层, 仅铜箔晶界处有少量多层石墨烯. 电学测试表明CVD制备的石墨烯在低温时呈现出较明显的类半导体特性; 薄膜电阻随外界磁场的增大而减小.Graphene has received great interest because of its peculiar band structure and excellent physical properties. But today, the development of graphene is limited to its size and quality. In this paper, single- and multilayer graphene films were synthesized on copper foils by chemical vapor deposition(CVD) using methane at ambient pressure. Experiment results find the high temperature, low concentration of methane gas, shorter growth time and suitable gas flow are the key to get high-quality and large-scale graphene films. Raman spectra, scanning electron microscope(SEM) and transmission electron microscope(TEM) characterization indicate the graphene films are mostly single-layer, only with rare area having multilayer around copper boundaries. Further electrical tests show the graphene films grown by CVD method represent semiconductor behaviors under low temperature and the sheet resistance of graphene films is decreasing with the external magnetic field increasing.
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Keywords:
- graphene /
- chemical vapor deposition /
- Raman spectra /
- electrical behavior
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[1] Geim A K, Novoselov K S 2007 Nature Mater. 6 183
[2] Han T W, He P F 2010 Acta Phys. Sin. 59 3408 (in Chinese) [韩同伟, 贺鹏飞 2010 59 3408]
[3] Neto A H C, Guinea F, Peres N M R, Novoselov K S, Geim A K2009 Rev. Mod. Phys. 81 109
[4] Hu H X, Zhang Z H, Liu X H, Qiu M, Ding K H 2009 Acta Phys.Sin. 59 7156 (in Chinese) [胡海鑫, 张振华, 刘新海, 邱明, 丁开和 2010 59 7156]
[5] Tan C L, Tan Z B, Ma L, Chen J, Yang F, Qu F M, Liu G T, YangH F, Yang C L, Lü L 2009 Acta Phys. Sin. 58 5726 (in Chinese) [谭长玲, 谭振兵, 马丽, 陈军, 杨帆, 屈凡明, 刘广同, 杨海方, 杨昌黎, 吕力 2009 58 5726]
[6] Ruoff R 2008 Nature Nanotech. 3 10
[7] Wu Y Q, Lin Y M, Bol A A, Jenkins K A, Xia F N, Farmer D B,Zhu Y, Avouris P 2011 Nature 472 74
[8] Park N, Hong S, Kim G, Jhi S H 2007 J. Am. Chem. Soc. 1298999
[9] Heo C, Yoo J, Lee S, Jo A, Jung S, Yoo H, Lee Y H, Suh M 2011Biomaterials 32 19
[10] Bonaccorso F, Sun Z, Hasan T, Ferrari A C 2010 Nature Photonics4 611
[11] Loh K P, Bao Q L, Eda G, Chhowalla M 2011 Nature Chemistry2 1015
[12] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y,Dubonos S V, Grigorieva I V, Firsov 2004 Science 306 666
[13] Stankovich S , Dikin D A, Piner R D, Kohlhass K A, KleinhammesA, Jia Y, Wu Y, Nguyen S T, Ruoff R S 2007 Carbon 45 1558
[14] Berger C, Song Z M, Li X B, Wu X S, Brown N, Naud C, MayouD, Li T, Hass J, Marchenkov A N, Conrad E H, First P N, Heer W A 2006 Science 312 1191
[15] Rummeli M H, Bachmatiuk A, Scott A, Borrnert F, Warner J H,Hoffman V, Lin J H, Cuniberti G, Buchner B 2010 ACS Nano 44206
[16] Wei D C, Liu Y Q, Zhang H L, Huang L P, Wu Bin, Chen J Y, Yu G 2009 J. Am. Chem. Soc. 131 11147
[17] Ding X L, Ding G Q, Xie X M, Huang F Q, Jiang M H 2011Carbon 49 2522
[18] Reina A, Jia X T, Ho J, Nezich D, Son H, Bulovic V, Dresselhaus M S, Kong J 2009 Nano Lett. 9 30
[19] Pan Y, Shi D X, Gao H J 2007 Chin. Phys. 16 3151
[20] Coraus J, N'Diaye A, Engler M, Busse C, Wall D, Buckanie N,Heringdorf F J M, Gastel R, Poelsema B, Michely T 2009 New J.Phys. 11 023006
[21] Li X S, Cai W W, An J H, Kim S, Nah J, Yang D X, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee S K, Colombo L, Ruoff RS 2009 Science 324 1312
[22] Su C Y, Fu D L, Lu A Y, Liu K K, Xu Y P, Juang Z Y, Li L J 2011 Nanotechnology 22 185309
[23] Ferrari A C, Meyer J C, Scardaci V, Casiraghi C, Lazzeri M, MauriF, Piscanec S, Jiang D, Novoselov K S, Roth S, Geim A K 2006Phys. Rev. Lett. 97 187401
[24] Ni Z H, Wang Y Y, Yu T, Shen Z X 2008 Nano Res. 1 273
[25] Yutaka K 1982 J. Phys. C: Solid State Phys. 15 5425
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