Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET

Liu Chang; Lu Ji-Wu; Wu Wang-Ran; Tang Xiao-Yu; Zhang Rui; Yu Wen-Jie; Wang Xi; Zhao Yi

doi:10.7498/aps.64.167305

Search

x

Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi. Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFETJ. Acta Physica Sinica, 2015, 64(16): 167305. DOI: 10.7498/aps.64.167305

Citation:

Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi. Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFETJ. Acta Physica Sinica, 2015, 64(16): 167305. DOI: 10.7498/aps.64.167305

Citation:

Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi. Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFETJ. Acta Physica Sinica, 2015, 64(16): 167305. DOI: 10.7498/aps.64.167305