Research status and development graphene devices using silicon as the subtrate

Wu Pei; Hu Xiao; Zhang Jian; Sun Lian-Feng

doi:10.7498/aps.66.218102

Abstract

Graphene, a two-dimensional sheet of sp2-hybridized carbon material, possesses excellent properties, such as high carrier mobility, high electrical conductivity, high thermal conductivity, strong mechanical strength and quantum anomalous Hall effect. So graphene quickly lights the enthusiasm for its research and application due to its superior performance. The silicon-based graphene devices are compatible with traditional silicon-based semiconductor technology. The combination of silicon-based graphene devices and silicon-based devices can greatly improve the overall performances of semiconductor devices. With the optimization of graphene preparation process and transfer technology, graphene devices using silicon as the substrate will show promising potential applications. With the scaling of device, the heat dissipation, power consumption and other issues impede the integration of silicon-based devices. Graphene provides a possible solution to these problems. In this paper, we summarize the graphene application in field effect transistor. The bandgap of graphene is zero, which will have adverse effect on the switching ratio of the device. In order to solve this problem, a variety of methods are used to open its bandgap, such as the quantum confinement method, the chemical doping method, the electric field regulation method, and the introduction stress method. In the field of optoelectronic devices, graphene can evenly absorb light at all frequencies, and its photoelectric properties have also been widespread concerned, such as photoelectric detector, photoelectric modulator, solar cell, etc. At the same time, graphene, as a typical two-dimensional material, possesses superior electrical properties and ultra-high specific surface area, and becomes the hottest material in high sensitivity sensors.

Keywords:

Authors and contacts

1.
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nonoscience and Technology, Beijing 100190, China;
2.
College of Materials Science and Opt-electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Corresponding author: Sun Lian-Feng, slf@nanoctr.cn

Funds: Project supported by the Major Nanoprojects of Ministry of Science and Technology of China (Grant No. 2016YFA0200403) and the National Natural Science Foundation of China (Grant No. 51472057).

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Cited By

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2]	Singh V, Joung D, Zhai L, Das S, Khondaker S I, Seal S 2011 Prog. Mater. Sci. 56 1178
[3]	Huang X, Yin Z Y, Wu S X, Qi X Y, He Q Y, Zhang Q C, Yan Q Y, Boey F, Zhang H 2011 Small 7 1876
[4]	Bolotin K I, Sikes K J, Jiang Z, Klima M, Fundenberg G, Hone J, Kim P, Stormer H L 2008 Solid State Commun. 146 351
[5]	Nair R R, Blake P, Grigorenko A N, Novoselov K S, Booth T J, Stauber T, Peres N M R, Geim A K 2008 Science 320 1308
[6]	Zhang Y B, Tan Y W, Stormer H L, Kim P 2005 Nature 438 201
[7]	Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V, Geim A K 2005 Proc. Natl. Acad. Sci. USA 102 10451
[8]	Novoselov K S, Jiang Z, Zhang Y, Morozov S V, Stormer H L, Zeitler U, Maan J C, Boebinger G S, Kim P, Geim A K 2007 Science 315 1379
[9]	Hwang E H, Adam S, Das Sarma S 2007 Phys. Rev. Lett. 98 186806
[10]	Nomura K, MacDonald A H 2006 Phys. Rev. Lett. 96 256602
[11]	Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206
[12]	Meyer J C, Geim A K, Katsnelson M I, Novoselov S, Booth T J, Roth S 2007 Nature 446 60
[13]	Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
[14]	Son Y W, Cohen M L, Louie S G 2006 Phys. Rev. Lett. 97 216803
[15]	Han M Y, Ozyilmaz B, Zhang Y, Kim P 2007 Phys. Rev. Lett. 98 206805
[16]	Chen Z, Lin Y M, Rooks M J, Avouris P 2007 Physica E 40 228
[17]	Trauzettel B, Bulaev D V, Loss D, Burkard G 2007 Nat. Phys. 3 192
[18]	Ohta T, Bostwick A, SeyⅡer T, Horn K, Rotenberg E 2006 Science 313 951
[19]	Nilsson J, Castro Neto A H, Guinea F, Peres N M R 2008 Phys. Rev. B 78 045405
[20]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen R, Wang F 2009 Nature 459 820
[21]	Evaldsson M, Zozoulenko I V, Xu H, Heinzel T 2008 Phys. Rev. B 78 161407
[22]	Bae S, Kim H, Lee Y, Xu X, Park J S, Zheng Y, Balakrishnan J, Lei T, Kim H R, Song Y, Kim Y J, Kim K S, Ozyilmaz B, Ahn J H, Hong B H, Iijima S 2010 Nat. Nanotechnol. 5 574
[23]	Wang F, Zhang Y, Tian C, Girit C, Zettl A, Crommie M. Shen Y R 2008 Science 320 206
[24]	Li Z Q, Henriksen E A, Jiang Z, Hao Z, Martin M C, Kim P, Stomer H L, Basov D N 2008 Nat. Phys. 4 532
[25]	Xia F, Mueller T, Golizadeh-Mojarad R 2009 Nano Lett. 9 1039
[26]	Gokus T, Nair R R, Bonetti A, Bohmler M, Ferrari A L, Hartschuh 2009 ACS Nano 3 3963
[27]	Luo Z, Vora P M, Mele E J, Johnson C, Kikkawa J M 2009 Appl. Phys. Lett. 94 111909
[28]	Kim P, Shi L, Majumdar A, McEuen P L 2001 Phys. Rev. Lett. 87 215502
[29]	Pop E, Mann D, Wang Q, Goodson K, Dai H J 2006 Nano Lett. 6 96
[30]	Balandin A A, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau C N 2008 Nano Lett. 8 902
[31]	Lemme M C, Echtemeyer T J, Baus M, Kurtz H 2007 IEEE Electron Dev. Lett. 28 282
[32]	Liao L, Lin Y C, Bao M, Cheng R, Bai J, Liu Y, Qu Y, Wang K L, Huang Y, Duan X 2010 Nature 467 305
[33]	Zhang J X, Wang L, Quhe R, Liu Q, Li H, Yu D, Mei W N, Shi J, Gao Z, Lu J 2013 Sci. Rep. 3 1314
[34]	Yu J, Liu G, Sumant A V, Balandin A A 2012 Nano Lett. 12 1603
[35]	Britnell L, Gorbachev R V, Jalil R, Belle B D, Schedin F, Mishchenko A, Goergiou T, Katsnelson M I, Eaves L, Morozov S V, Peres N M R, Leist J, Geim A K, Novoselov K S, Ponomarenko L A 2012 Science 335 947
[36]	Moon J S, Seo H C, Stratan F, Antcliffe M, Schmitz A, Ross R S, Kiselev A A, Wheeler V D, Nyakiti L O, Gaskill D K, Lee K M, Asbeck P M 2013 IEEE Electron Dev. Lett. 34 1190
[37]	Khasanvis S, Habib K M M, Rahman M, Narayanan P, Lake R K, Moritz C A 2012 IEEE/ACM International Symposium on Nanoscale Architectures (NanoArch) Amsterdam, the Netherlands July 4-6, 2012 p69
[38]	Johari Z, Hamid F K, Tan M L P, Ahmadi M T, Harun F K, Ismail R 2013 J. Comput. Theor. Nanos. 10 1164
[39]	Wessely P J, Wessely Y F, Birinci E, Beckmann K, Riedinger B, Schwalke U 2012 Physica E 44 1132
[40]	Wessely P J, Schwalke U 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era (IEEE DTIS) New York, USA, March 26-28, 2013 p12
[41]	Wessely P J, Schwalke U 2014 9th IEEE International Conference on Design and Technology of Integrated Systems In Nanoscale Era (DTIS) Santorini May 6-8, 2014 p1
[42]	Sordan R, Ferrari A C 2013 IEEE International Electron Devices Meeting (IEDM) Washington USA, December 9-11, 2013 p1
[43]	Han S J, Garcia A V, Oida S, Jenkins K A, Haensch W 2014 Nat. Commun. 5 3086
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[52]	Liu N, Luo F, Wu H X, Liu Y H, Zhang C, Chen J 2008 Adv. Funct. Mater. 18 1518
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[54]	An X, Liu F, Jung Y J, Kar S 2013 Nano Lett. 13 909
[55]	L P, Zhang X J, Zhang X W, Deng W, Jie J S 2013 IEEE Electron Device Lett. 34 1337
[56]	Zhu M, Li X M, Guo Y B, Li X, Sun P Z, Zang X B, Wang K L, Zhong M L, Wu D H, Zhu H W 2014 Nanoscale 6 4909
[57]	Li X M, Zhu M, Du M D, L Z, Zhang L, Li Y C, Yang T T, Li X, Wang K L, Zhu H W, Fang Y 2016 Small 12 595
[58]	Kim J, Joo S S, Lee K W, Kim J H, Shin D H, Choi S H 2014 ACS Appl. Mater. Inter. 6 20880
[59]	Zhu M, Zhang L, Li X M, He Y J, Li X, Guo F M, Zang X B, Wang K L, Xie D, Li X H, Wei B Q, Zhu H W 2015 J. Mater. Chem. A 3 8133
[60]	Liu M, Yin X B, Ulin-Avila E, Geng B, Zentgraf T, Ju L, Wang F, Zhang X 2011 Nature 474 64
[61]	Koester S J, Li M 2012 Appl. Phys. Lett. 100 171107
[62]	Liu M, Yin X B, Zhang X 2012 Nano Lett. 12 1482
[63]	Kim K, Choi J Y, Kim T, Cho S H, Chung H J 2011 Nature 479 338
[64]	Mohsin M, Schall D, Otto M, Noculak A, Neumaier D, Kurz H 2014 Opt. Express 22 15292
[65]	Ye S, Wang Z, Tang L, Zhang Y, Lu R, Liu Y 2014 Opt. Express 22 26173
[66]	Midrio M, Boscolo S, Moresco M 2012 Opt. Express 20 23144
[67]	Xu C, Jin Y C, Yang L Z, Yang J Y, Jiang X Q 2012 Opt. Express 20 22398
[68]	Du W, Li E P, Hao R 2014 IEEE Photon. Tech. L. 26 2008
[69]	Huang B H, Lu W B, Li X B, Wang J, Liu Z 2016 Appl. Opt. 55 5598
[70]	Hao R, Du W, Li E P 2013 Appl. Phys. Lett. 103 061116
[71]	Hu Y T, Pantouvaki M, Brems S, Asselberghs I, Huyghebaert C, Geisler M, Alessandri C, Baers R, Absil P, van Thourhout D 2014 60th Annual IEEE International Electron Devices Meeting (IEDM) San Francisco USA, December 15-17, 2014 p561
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[78]	Wang G 2015 Ph. D. Dissertation (Beijing: National Center for Nonoscience and Technology) (in Chinese) [王钢 2015 博士学位论文(北京: 国家纳米科学中心)]
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[81]	Cheng Z, Li Q, Li Z, Zhou Q, Fang Y 2010 Nano Lett. 10 1864
[82]	Zhang T, Cheng Z, Wang Y, Li Z, Wang C, Li Y, Fang Y 2010 Nano Lett. 10 4738
[83]	Sudibya H G, He Q, Zhang H, Chen P 2011 ACS Nano 5 1990
[84]	Li X, Shi J J, Pang J C, Liu W H, Liu H Z, Wang X L 2014 J. Nanomater. 2014 547139
[85]	Dong X C, Shi Y M, Huang W, Chen P, Li L J 2010 Adv. Mater. 22 1649

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Vol. 66, Issue 21 - 2017-11-05

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