高质量单层二硫化钼薄膜的研究进展

魏争; 王琴琴; 郭玉拓; 李佳蔚; 时东霞; 张广宇

doi:10.7498/aps.67.20180732

摘要

作为一种新型的二维半导体材料，单层二硫化钼薄膜由于其优异的特性，在电子学与光电子学等众多领域具有潜在的应用价值.本文综述了我们课题组在过去几年中针对单层二硫化钼薄膜的研究所取得的进展，具体包括：在二硫化钼薄膜的制备方面，通过氧辅助化学气相沉积方法，实现了大尺寸单层二硫化钼单晶的可控生长和晶圆级单层二硫化钼薄膜的高定向外延生长；在二硫化钼薄膜的加工方面，发展了单层二硫化钼薄膜的无损转移、洁净图案化加工、可控结构相变与局域相调控的方法，为场效应晶体管等电子学器件的制备与性能优化提供了基础；在二硫化钼异质结方面，研究了二硫化钼薄膜与其他二维材料形成的异质结的电学以及光电性质，为二维材料异质结的构筑和器件特性研究提供了实验参考；在二硫化钼薄膜功能化器件与应用方面，构筑了全二维材料、亚5 nm超短沟道场效应晶体管器件，验证了单层二硫化钼对短沟道效应的有效抑制及其在5 nm工艺节点器件中的应用优势；此外，利用制备的高质量单层二硫化钼和发展的器件洁净加工技术，实现了高性能柔性薄膜晶体管的集成，获得了超高灵敏度与稳定性的非接触型湿度传感器.我们在二硫化钼薄膜的制备、加工以及器件特性研究方面所取得的进展对于二硫化钼及其他二维过渡金属硫属化合物的基础和应用研究均具有指导意义.

关键词:

Abstract

As an emerging two-dimensional (2D) material, monolayer molybdenum disulfide films show excellent electrical and optical properties and have aroused great interest due to their potential applications in electronics and optoelectronics. In this paper, we review our works about molybdenum disulfide films in the past few years. Chemical vapor deposition (CVD) is a convenient and low-cost method to synthesize 2D materials. By oxygen-assisted CVD, the wafer-scale highly-oriented monolayer molybdenum disulfide films and large single-crystal monolayer molybdenum disulfide on various substrates have been prepared epitaxially. Preparation of high-quality monolayer molybdenum disulfide films is the key to measure its intrinsic properties and realize its large-scale applications. Besides the preparation of high-quality materials, the optimizing of transfer technique and fabrication technique are of equal importance for improving the properties of electronic and optoelectronic devices. Water-assisted lossless transfer, patterned peeling, structural change and local phase transition of monolayer molybdenum disulfide films pave the way for preparing and optimizing the functionalized devices. For example, water-assisted transfer and patterned peeling provide methods of preparing molybdenum disulfide samples with clean surfaces and interfaces. Phase transition in the contact area of field-effect transistor reduces the contact resistance effectively, which improves the electrical performance. In addition, the heterojunctions of molybdenum disulfide and other 2D materials show novel electrical and optical properties. As for the functional devices, ultrashort-channel field-effect transistors, integrated flexible thin film transistors, and humidity sensor array have been realized with monolayer molybdenum disulfide films. A grain boundary widening technique is developed to fabricate graphene electrodes for ultrashort-channel monolayer molybdenum disulfide transistors. Field-effect transistors with channel lengths scaling down to 4 nm can be realized reliably and exhibit superior performances, such as the nearly Ohmic contacts and excellent immunity to short channel effects. Furthermore, monolayer molybdenum disulfide films show excellent electrical properties in the measurement of integrated flexible thin film transistors. Under a uniaxial stain of 1%, the performance of the device shows no obvious change, revealing not only the high quality of CVD-grown molybdenum disulfide films, but also the stabilities of these flexible thin film transistor devices. Molybdenum disulfide humidity sensor array for noncontact sensation also shows high sensitivity and stability. Mobility and on/off ratio of the devices in the array decrease linearly with the relative humidity increasing, leading to a high sensitivity of more than 104. The study of monolayer molybdenum disulfide films is universal and instructive for other 2D transition metal dichalcogenides.

Keywords:

作者及机构信息

1.
中国科学院物理研究所, 北京凝聚态物理国家研究中心, 中国科学院纳米物理与器件重点实验室, 北京 100190;

2.
中国科学院大学物理科学学院, 北京 100049;

3.
纳米材料与器件物理北京市重点实验室, 北京 100190;

4.
量子物质科学协同创新中心, 北京 100190

通信作者: 时东霞, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn ; 张广宇, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn

基金项目: 国家自然科学基金（批准号：51572289，61734001）、国家重点研发计划（批准号：2016YFA0300904）、中国科学院前沿科学重点研究项目（批准号：QYZDB-SSW-SLH004）和中国科学院先导（B）培育项目（批准号：XDPB06）资助的课题.

Authors and contacts

1.
CAS Key Laboratory of Nanoscale Physics and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

2.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China;

3.
Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;

4.
Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

Corresponding author: Shi Dong-Xia, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn ; Zhang Guang-Yu, dxshi@iphy.ac.cn;gyzhang@iphy.ac.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51572289, 61734001), the National Key RD Program of China (Grant No. 2016YFA0300904), the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (Grant No. QYZDB-SSW-SLH004), and the Strategic Priority Research Program (B) of the Chinese Academy of Sciences (Grant No. XDPB06).

参考文献

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[3]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[4]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497
[5]	Pu J, Yomogida Y, Liu K K, Li L J, Iwasa Y, Takenobu T 2012 Nano Lett. 12 4013
[6]	Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[7]	Tan L K, Liu B, Teng J H, Guo S H, Low H Y, Loh K P 2014 Nanoscale 6 10584
[8]	Liu H J, Jiao L, Yang F, Cai Y, Wu X X, Ho W K, Gao C L, Jia J F, Wang N, Fan H, Yao W, Xie M H 2014 Phys. Rev. Lett. 113 066105
[9]	Serna M I, Yoo S H, Moreno S, Xi Y, Oviedo J P, Choi H, Alshareef H N, Kim M J, Minary-Jolandan M, Quevedo-Lopez M A 2016 ACS Nano 10 6054
[10]	Li H N, Li Y, Aljarb A, Shi Y M, Li L J 2017 Chem. Rev. 7b00212
[11]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[12]	Lin Y C, Zhang W J, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[13]	Kang K, Lee K H, Han Y, Gao H, Xie S, Muller D A, Park J 2017 Nature 550 229
[14]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[15]	Zheng J Y, Yan X X, Lu Z X, Qiu H L, Xu G C, Zhou X, Wang P, Pan X Q, Liu K H, Jiao L Y 2017 Adv. Mater. 29 1604540
[16]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[17]	Zhang J, Yu H, Chen W, Tian X Z, Liu D H, Cheng M, Xie G B, Yang W, Yang R, Bai X D, Shi D X, Zhang G Y 2014 ACS Nano 8 6024
[18]	Chen W, Zhao J, Zhang J, Gu L, Yang Z Z, Li X M, Yu H, Zhu X T, Yang R, Shi D X, Lin X C, Guo J D, Bai X D, Zhang G Y 2015 J. Am. Chem. Soc. 137 15632
[19]	Yu H, Yang Z Z, Du L J, Zhang J, Shi J N, Chen W, Chen P, Liao M Z, Zhao J, Meng J L, Wang G L, Zhu J Q, Yang R, Shi D X, Gu L, Zhang G Y 2017 Small 13 1603005
[20]	Yu H, Liao M, Zhao W, Liu G, Zhou X J, Wei Z, Xu X, Liu K, Hu Z, Deng K, Zhou S, Shi J A, Gu L, Shen C, Zhang T, Du L, Xie L, Zhu J, Chen W, Yang R, Shi D, Zhang G 2017 ACS Nano 11 12001
[21]	Zhao J, Yu H, Chen W, Yang R, Zhu J Q, Liao M Z, Shi D X, Zhang G Y 2016 ACS Appl. Mater. Interfaces 8 16546
[22]	Meng J L, Wang G L, Li X M, Lu X B, Zhang J, Yu H, Chen W, Du L J, Liao M Z, Zhao J, Chen P, Zhu J Q, Bai X D, Shi D X, Zhang G Y 2016 Small 12 3770
[23]	Zhu J Q, Wang Z C, Yu H, Li N, Zhang J, Meng J L, Liao M Z, Zhao J, Lu X B, Du L J, Yang R, Shi D X, Jiang Y, Zhang G Y 2017 J. Am. Chem. Soc. 139 10216
[24]	Xie L, Du L J, Lu X B, Yang R, Shi D X, Zhang G Y 2017 Chin. Phys. B 26 087306
[25]	Chen P, Xiang J Y, Yu H, Zhang J, Xie G B, Wu S, Lu X B, Wang G L, Zhao J, Wen F S, Liu Z Y, Yang R, Shi D X, Zhang G Y 2015 2D Materials 2 034009
[26]	Zhang J, Wang J H, Chen P, Sun Y, Wu S, Jia Z Y, Lu X B, Yu H, Chen W, Zhu J Q, Xie G B, Yang R, Shi D X, Xu X L, Xiang J Y, Liu K H, Zhang G Y 2016 Adv. Mater. 28 1950
[27]	Du L J, Yu H, Liao M Z, Wang S P, Xie L, Lu X B, Zhu J Q, Li N, Shen C, Chen P, Yang R, Shi D X, Zhang G Y 2017 Appl. Phys. Lett. 111 263106
[28]	Xie L, Liao M Z, Wang S P, Yu H, Du L J, Tang J, Zhao J, Zhang J, Chen P, Lu X B, Wang G L, Xie G B, Yang R, Shi D X, Zhang G Y 2017 Adv. Mater. 29 1702522
[29]	Zhao J, Chen W, Meng J L, Yu H, Liao M Z, Zhu J Q, Yang R, Shi D X, Zhang G Y 2016 Adv. Elec. Mater. 2 1500379
[30]	Zhao J, Li N, Yu H, Wei Z, Liao M Z, Chen P, Wang S P, Shi D X, Sun Q J, Zhang G Y 2017 Adv. Mater. 29 1702076
[31]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q X, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C M, Wong H S P, Javey A 2016 Science 354 99
[32]	Feng J D, Graf M, Liu K, Ovchinnikov D, Dumcenco D, Heiranian M, Nandigana V, Aluru N R, Kis A, Radenovic A 2016 Nature 536 197
[33]	Sahoo P K, Memaran S, Xin Y, Balicas L, Gutirrez H R 2018 Nature 553 63
[34]	Baker M A, Gilmore R, Lenardi C, Gissler W 1999 Appl. Surf. Sci. 150 255
[35]	Yu Y F, Li C, Liu Y, Su L Q, Zhang Y, Cao L Y 2013 Sci. Rep. 3 1866
[36]	Islam N R, Kang N, Bhanu U, Paudel H P, Erementchouk M, Tetard L, Leuenberger M N, Khondaker S I 2014 Nanoscale 6 10033
[37]	Yang W, Chen G, Shi Z, Liu C C, Zhang L, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Yao Y, Zhang Y, Zhang G 2013 Nat. Mater. 12 792
[38]	Geim A K, Grigorieva I V 2013 Nature 499 419
[39]	Lee G H, Yu Y J, Cui X, Petrone N, Lee C H, Choi M S, Lee D Y, Lee C, Yoo W J, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J 2013 ACS Nano 7 7931
[40]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626
[41]	Lee Y H, Yu L L, Wang H, Fang W J, Ling X, Shi Y M, Lin C T, Huang J K, Chang M T, Chang C S, Dresselhaus M, Palacios T, Li L J, Kong J 2013 Nano Lett. 13 1852
[42]	Gurarslan A, Yu Y F, Su L Q, Yu Y L, Suarez F, Yao S, Zhu Y, Ozturk M, Zhang Y, Cao L Y 2014 ACS Nano 8 11522
[43]	Schneider G F, Calado V E, Zandbergen H, Vandersypen L M K, Dekker C 2010 Nano Lett. 10 1912
[44]	Braga S F, Coluci V R, Legoas S B, Giro R, Galvo D S, Baughman R H 2004 Nano Lett. 4 881
[45]	Chen Y, Lu J, Gao Z X 2007 J. Phys. Chem. C 111 1625
[46]	Pan H, Feng Y, Lin J 2005 Phys. Rev. B 72 085415
[47]	Lauret J S, Arenal R, Ducastelle F, Loiseau A, Cau M, Attal-Tretout B, Rosencher E, Goux-Capes L 2005 Phys. Rev. Lett. 94 037405
[48]	Guo G Y, Lin J C 2005 Phys. Rev. B 71 165402
[49]	Xiao J, Long M Q, Li X M, Xu H, Huang H, Gao Y L 2014 Sci. Rep. 4 4327
[50]	Ghorbani-Asl M, Zibouche N, Wahiduzzaman M, Oliveira A F, Kuc A, Heine T 2013 Sci. Rep. 3 2961
[51]	Chhowalla M, Shin H S, Eda G, Li L J, Loh K P, Zhang H 2013 Nat. Chem. 5 263
[52]	Duerloo K A N, Li Y, Reed E J 2014 Nat. Commun. 5 4214
[53]	Guo Y, Sun D, Ouyang B, Raja A, Song J, Heinz T F, Brus L E 2015 Nano Lett. 15 5081
[54]	Eda G, Fujita T, Yamaguchi H, Voiry D, Chen M, Chhowalla M 2012 ACS Nano 6 7311
[55]	Nayak A P, Pandey T, Voiry D, Liu J, Moran S T, Sharma A, Tan C, Chen C, Li L J, Chhowalla M U, Lin J F, Singh A K, Akinwande D 2015 Nano Lett. 15 346
[56]	Liu Q, Li X, He Q, Khalil A, Liu D, Xiang T, Wu X, Song L 2015 Small 11 5556
[57]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271
[58]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M 2011 Nano Lett. 11 5111
[59]	Cai L, He J, Liu Q, Yao T, Chen L, Yan W, Hu F, Jiang Y, Zhao Y, Hu T, Sun Z, Wei S 2015 J. Am. Chem. Soc. 137 2622
[60]	Castellanos-Gomez A, Buscema M, Molenaar R, Singh V, Janssen L, Herre S J, van der Zant, Steele G A 2014 2D Materials 1 011002
[61]	Wang L, Meric I, Huang P, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos L, Muller D 2013 Science 342 614
[62]	Kwak J Y, Hwang J, Calderon B, Alsalman H, Munoz N, Schutter B, Spencer M G 2014 Nano Lett. 14 4511
[63]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[64]	Xu K, Chen D X, Yang F Y, Wang Z X, Yin L, Wang F, Cheng R Q, Liu K H, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[65]	Lee S C, Pearson G L 1981 Solid State Electron. 24 563
[66]	Lee C, Yan H, Brus L E, Heinz T F, Hone J, Ryu S 2010 Acs Nano 4 2695
[67]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X F, Tomanek D, Ye P D D 2014 ACS Nano 8 4033
[68]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[69]	Tran V, Soklaski R, Liang Y, Yang L 2014 Phys. Rev. B 89 235319
[70]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y M, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[71]	Jin W, Yeh P C, Zaki N, Chenet D, Arefe G, Hao Y, Sala A, Mentes T O, Dadap J I, Locatelli A, Home J, Osgood Jr R M 2015 Phys. Rev. B 92 201409
[72]	Zhu C R, Wang G, Liu B L, Marie X, Qiao X F, Zhang X, Wu X X, Fan H, Tan P H, Amand T, Urbaszek B 2013 Phys. Rev. B 88 121301
[73]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Nanotechnol. 9 372
[74]	Buscema M, Groenendijk D J, Blanter S I, Steele G A, van der Zant H S, Castellanos-Gomez A 2014 Nano Lett. 14 3347
[75]	Na J, Lee Y T, Lim J A, Hwang D K, Kim G T, Choi W K, Song Y W 2014 ACS Nano 8 11753
[76]	Campbell P M, Tarasov A, Joiner C A, Tsai M Y, Pavlidis G, Graham S, Ready W J, Vogel E M 2016 Nanoscale 8 2268
[77]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M C, Yan J, Mandrus D, Tomnek D, Zhou Z 2014 Nano Lett. 14 3594
[78]	Cao Y, Wei Z, Liu S, Gan L, Guo X, Xu W, Steigerwald M L, Liu Z, Zhu D 2010 Angew. Chem. 122 6463
[79]	Cao Y, Liu S, Shen Q, Yan K, Li P, Xu J, Yu D, Steigerwald M L, Nuckolls C, Liu Z 2009 Adv. Funct. Mater. 19 2743
[80]	Liu Y, Guo J, Wu Y C, Zhu E, Weiss N O, He Q, Wu H, Cheng H C, Xu Y, Shakir I 2016 Nano Lett. 16 6337
[81]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O 2015 Nano Lett. 15 3030
[82]	Miao J, Zhang S, Cai L, Scherr M, Wang C 2015 ACS Nano 9 9236
[83]	Roy T, Tosun M, Kang J S, Sachid A B, Desai S B, Hettick M, Hu C M C, Javey A 2014 ACS Nano 8 6259
[84]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[85]	Yoon J, Park W, Bae G Y, Kim Y, Jang H S, Hyun Y, Lim S K, Kahng Y H, Hong W K, Lee B H, Ko H C 2013 Small 9 3295
[86]	Zhao J, Wang G L, Yang R, Lu X B, Cheng M, He C L, Xie G B, Meng J L, Shi D X, Zhang G Y 2015 ACS Nano 9 1622
[87]	Powell M J 1989 IEEE Trans. Electron. Dev. 36 2753
[88]	Dimitrakopoulos C D, Malenfant P R L 2002 Adv. Mater. 14 99
[89]	Street R A 2009 Adv. Mater. 21 2007
[90]	Zhao J, He C L, Yang R, Shi Z W, Cheng M, Yang W, Xie G B, Wang D M, Shi D X, Zhang G Y 2012 Appl. Phys. Lett. 101 063112
[91]	Late D J, Liu B, Matte H S S R, Dravid V P, Rao C N R 2012 ACS Nano 6 5635
[92]	Zhang S L, Choi H H, Yue H Y, Yang W C 2014 Curr. Appl. Phys. 14 264
[93]	Late D J, HuangY K, Liu B, Acharya J, Shirodkar S N, Luo J J, Yan A M, Charles D, Waghmare U V, Dravid V P, Rao C N R 2013 ACS Nano 7 4879
[94]	Wang Y L, Cong C X, Qiu C Y, Yu T 2013 Small 9 2857
[95]	Horzum S, Sahin H, Cahangirov S, Cudazzo P, Rubio A, Serin T, Peeters F M 2013 Phys. Rev. B 87 125415
[96]	Tongay S, Zhou J, Ataca C, Liu J, Kang J S, Matthews T S, You L, Li J B, Grossman J C, Wu J Q 2013 Nano Lett. 13 2831
[97]	Varghese J O, Agbo P, Sutherland A M, Brar V W, Rossman G R, Gray H B, Heath J R 2015 Adv. Mater. 27 2734

施引文献

[1]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[3]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[4]	Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A 2013 Nat. Nanotechnol. 8 497
[5]	Pu J, Yomogida Y, Liu K K, Li L J, Iwasa Y, Takenobu T 2012 Nano Lett. 12 4013
[6]	Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[7]	Tan L K, Liu B, Teng J H, Guo S H, Low H Y, Loh K P 2014 Nanoscale 6 10584
[8]	Liu H J, Jiao L, Yang F, Cai Y, Wu X X, Ho W K, Gao C L, Jia J F, Wang N, Fan H, Yao W, Xie M H 2014 Phys. Rev. Lett. 113 066105
[9]	Serna M I, Yoo S H, Moreno S, Xi Y, Oviedo J P, Choi H, Alshareef H N, Kim M J, Minary-Jolandan M, Quevedo-Lopez M A 2016 ACS Nano 10 6054
[10]	Li H N, Li Y, Aljarb A, Shi Y M, Li L J 2017 Chem. Rev. 7b00212
[11]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[12]	Lin Y C, Zhang W J, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[13]	Kang K, Lee K H, Han Y, Gao H, Xie S, Muller D A, Park J 2017 Nature 550 229
[14]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[15]	Zheng J Y, Yan X X, Lu Z X, Qiu H L, Xu G C, Zhou X, Wang P, Pan X Q, Liu K H, Jiao L Y 2017 Adv. Mater. 29 1604540
[16]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[17]	Zhang J, Yu H, Chen W, Tian X Z, Liu D H, Cheng M, Xie G B, Yang W, Yang R, Bai X D, Shi D X, Zhang G Y 2014 ACS Nano 8 6024
[18]	Chen W, Zhao J, Zhang J, Gu L, Yang Z Z, Li X M, Yu H, Zhu X T, Yang R, Shi D X, Lin X C, Guo J D, Bai X D, Zhang G Y 2015 J. Am. Chem. Soc. 137 15632
[19]	Yu H, Yang Z Z, Du L J, Zhang J, Shi J N, Chen W, Chen P, Liao M Z, Zhao J, Meng J L, Wang G L, Zhu J Q, Yang R, Shi D X, Gu L, Zhang G Y 2017 Small 13 1603005
[20]	Yu H, Liao M, Zhao W, Liu G, Zhou X J, Wei Z, Xu X, Liu K, Hu Z, Deng K, Zhou S, Shi J A, Gu L, Shen C, Zhang T, Du L, Xie L, Zhu J, Chen W, Yang R, Shi D, Zhang G 2017 ACS Nano 11 12001
[21]	Zhao J, Yu H, Chen W, Yang R, Zhu J Q, Liao M Z, Shi D X, Zhang G Y 2016 ACS Appl. Mater. Interfaces 8 16546
[22]	Meng J L, Wang G L, Li X M, Lu X B, Zhang J, Yu H, Chen W, Du L J, Liao M Z, Zhao J, Chen P, Zhu J Q, Bai X D, Shi D X, Zhang G Y 2016 Small 12 3770
[23]	Zhu J Q, Wang Z C, Yu H, Li N, Zhang J, Meng J L, Liao M Z, Zhao J, Lu X B, Du L J, Yang R, Shi D X, Jiang Y, Zhang G Y 2017 J. Am. Chem. Soc. 139 10216
[24]	Xie L, Du L J, Lu X B, Yang R, Shi D X, Zhang G Y 2017 Chin. Phys. B 26 087306
[25]	Chen P, Xiang J Y, Yu H, Zhang J, Xie G B, Wu S, Lu X B, Wang G L, Zhao J, Wen F S, Liu Z Y, Yang R, Shi D X, Zhang G Y 2015 2D Materials 2 034009
[26]	Zhang J, Wang J H, Chen P, Sun Y, Wu S, Jia Z Y, Lu X B, Yu H, Chen W, Zhu J Q, Xie G B, Yang R, Shi D X, Xu X L, Xiang J Y, Liu K H, Zhang G Y 2016 Adv. Mater. 28 1950
[27]	Du L J, Yu H, Liao M Z, Wang S P, Xie L, Lu X B, Zhu J Q, Li N, Shen C, Chen P, Yang R, Shi D X, Zhang G Y 2017 Appl. Phys. Lett. 111 263106
[28]	Xie L, Liao M Z, Wang S P, Yu H, Du L J, Tang J, Zhao J, Zhang J, Chen P, Lu X B, Wang G L, Xie G B, Yang R, Shi D X, Zhang G Y 2017 Adv. Mater. 29 1702522
[29]	Zhao J, Chen W, Meng J L, Yu H, Liao M Z, Zhu J Q, Yang R, Shi D X, Zhang G Y 2016 Adv. Elec. Mater. 2 1500379
[30]	Zhao J, Li N, Yu H, Wei Z, Liao M Z, Chen P, Wang S P, Shi D X, Sun Q J, Zhang G Y 2017 Adv. Mater. 29 1702076
[31]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q X, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C M, Wong H S P, Javey A 2016 Science 354 99
[32]	Feng J D, Graf M, Liu K, Ovchinnikov D, Dumcenco D, Heiranian M, Nandigana V, Aluru N R, Kis A, Radenovic A 2016 Nature 536 197
[33]	Sahoo P K, Memaran S, Xin Y, Balicas L, Gutirrez H R 2018 Nature 553 63
[34]	Baker M A, Gilmore R, Lenardi C, Gissler W 1999 Appl. Surf. Sci. 150 255
[35]	Yu Y F, Li C, Liu Y, Su L Q, Zhang Y, Cao L Y 2013 Sci. Rep. 3 1866
[36]	Islam N R, Kang N, Bhanu U, Paudel H P, Erementchouk M, Tetard L, Leuenberger M N, Khondaker S I 2014 Nanoscale 6 10033
[37]	Yang W, Chen G, Shi Z, Liu C C, Zhang L, Xie G, Cheng M, Wang D, Yang R, Shi D, Watanabe K, Taniguchi T, Yao Y, Zhang Y, Zhang G 2013 Nat. Mater. 12 792
[38]	Geim A K, Grigorieva I V 2013 Nature 499 419
[39]	Lee G H, Yu Y J, Cui X, Petrone N, Lee C H, Choi M S, Lee D Y, Lee C, Yoo W J, Watanabe K, Taniguchi T, Nuckolls C, Kim P, Hone J 2013 ACS Nano 7 7931
[40]	Conley H J, Wang B, Ziegler J I, Haglund R F, Pantelides S T, Bolotin K I 2013 Nano Lett. 13 3626
[41]	Lee Y H, Yu L L, Wang H, Fang W J, Ling X, Shi Y M, Lin C T, Huang J K, Chang M T, Chang C S, Dresselhaus M, Palacios T, Li L J, Kong J 2013 Nano Lett. 13 1852
[42]	Gurarslan A, Yu Y F, Su L Q, Yu Y L, Suarez F, Yao S, Zhu Y, Ozturk M, Zhang Y, Cao L Y 2014 ACS Nano 8 11522
[43]	Schneider G F, Calado V E, Zandbergen H, Vandersypen L M K, Dekker C 2010 Nano Lett. 10 1912
[44]	Braga S F, Coluci V R, Legoas S B, Giro R, Galvo D S, Baughman R H 2004 Nano Lett. 4 881
[45]	Chen Y, Lu J, Gao Z X 2007 J. Phys. Chem. C 111 1625
[46]	Pan H, Feng Y, Lin J 2005 Phys. Rev. B 72 085415
[47]	Lauret J S, Arenal R, Ducastelle F, Loiseau A, Cau M, Attal-Tretout B, Rosencher E, Goux-Capes L 2005 Phys. Rev. Lett. 94 037405
[48]	Guo G Y, Lin J C 2005 Phys. Rev. B 71 165402
[49]	Xiao J, Long M Q, Li X M, Xu H, Huang H, Gao Y L 2014 Sci. Rep. 4 4327
[50]	Ghorbani-Asl M, Zibouche N, Wahiduzzaman M, Oliveira A F, Kuc A, Heine T 2013 Sci. Rep. 3 2961
[51]	Chhowalla M, Shin H S, Eda G, Li L J, Loh K P, Zhang H 2013 Nat. Chem. 5 263
[52]	Duerloo K A N, Li Y, Reed E J 2014 Nat. Commun. 5 4214
[53]	Guo Y, Sun D, Ouyang B, Raja A, Song J, Heinz T F, Brus L E 2015 Nano Lett. 15 5081
[54]	Eda G, Fujita T, Yamaguchi H, Voiry D, Chen M, Chhowalla M 2012 ACS Nano 6 7311
[55]	Nayak A P, Pandey T, Voiry D, Liu J, Moran S T, Sharma A, Tan C, Chen C, Li L J, Chhowalla M U, Lin J F, Singh A K, Akinwande D 2015 Nano Lett. 15 346
[56]	Liu Q, Li X, He Q, Khalil A, Liu D, Xiang T, Wu X, Song L 2015 Small 11 5556
[57]	Splendiani A, Sun L, Zhang Y, Li T, Kim J, Chim C Y, Galli G, Wang F 2010 Nano Lett. 10 1271
[58]	Eda G, Yamaguchi H, Voiry D, Fujita T, Chen M, Chhowalla M 2011 Nano Lett. 11 5111
[59]	Cai L, He J, Liu Q, Yao T, Chen L, Yan W, Hu F, Jiang Y, Zhao Y, Hu T, Sun Z, Wei S 2015 J. Am. Chem. Soc. 137 2622
[60]	Castellanos-Gomez A, Buscema M, Molenaar R, Singh V, Janssen L, Herre S J, van der Zant, Steele G A 2014 2D Materials 1 011002
[61]	Wang L, Meric I, Huang P, Gao Q, Gao Y, Tran H, Taniguchi T, Watanabe K, Campos L, Muller D 2013 Science 342 614
[62]	Kwak J Y, Hwang J, Calderon B, Alsalman H, Munoz N, Schutter B, Spencer M G 2014 Nano Lett. 14 4511
[63]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[64]	Xu K, Chen D X, Yang F Y, Wang Z X, Yin L, Wang F, Cheng R Q, Liu K H, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[65]	Lee S C, Pearson G L 1981 Solid State Electron. 24 563
[66]	Lee C, Yan H, Brus L E, Heinz T F, Hone J, Ryu S 2010 Acs Nano 4 2695
[67]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X F, Tomanek D, Ye P D D 2014 ACS Nano 8 4033
[68]	Mak K F, Lee C, Hone J, Shan J, Heinz T F 2010 Phys. Rev. Lett. 105 136805
[69]	Tran V, Soklaski R, Liang Y, Yang L 2014 Phys. Rev. B 89 235319
[70]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y M, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[71]	Jin W, Yeh P C, Zaki N, Chenet D, Arefe G, Hao Y, Sala A, Mentes T O, Dadap J I, Locatelli A, Home J, Osgood Jr R M 2015 Phys. Rev. B 92 201409
[72]	Zhu C R, Wang G, Liu B L, Marie X, Qiao X F, Zhang X, Wu X X, Fan H, Tan P H, Amand T, Urbaszek B 2013 Phys. Rev. B 88 121301
[73]	Li L, Yu Y, Ye G J, Ge Q, Ou X, Wu H, Feng D, Chen X H, Zhang Y 2014 Nat. Nanotechnol. 9 372
[74]	Buscema M, Groenendijk D J, Blanter S I, Steele G A, van der Zant H S, Castellanos-Gomez A 2014 Nano Lett. 14 3347
[75]	Na J, Lee Y T, Lim J A, Hwang D K, Kim G T, Choi W K, Song Y W 2014 ACS Nano 8 11753
[76]	Campbell P M, Tarasov A, Joiner C A, Tsai M Y, Pavlidis G, Graham S, Ready W J, Vogel E M 2016 Nanoscale 8 2268
[77]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M C, Yan J, Mandrus D, Tomnek D, Zhou Z 2014 Nano Lett. 14 3594
[78]	Cao Y, Wei Z, Liu S, Gan L, Guo X, Xu W, Steigerwald M L, Liu Z, Zhu D 2010 Angew. Chem. 122 6463
[79]	Cao Y, Liu S, Shen Q, Yan K, Li P, Xu J, Yu D, Steigerwald M L, Nuckolls C, Liu Z 2009 Adv. Funct. Mater. 19 2743
[80]	Liu Y, Guo J, Wu Y C, Zhu E, Weiss N O, He Q, Wu H, Cheng H C, Xu Y, Shakir I 2016 Nano Lett. 16 6337
[81]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O 2015 Nano Lett. 15 3030
[82]	Miao J, Zhang S, Cai L, Scherr M, Wang C 2015 ACS Nano 9 9236
[83]	Roy T, Tosun M, Kang J S, Sachid A B, Desai S B, Hettick M, Hu C M C, Javey A 2014 ACS Nano 8 6259
[84]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[85]	Yoon J, Park W, Bae G Y, Kim Y, Jang H S, Hyun Y, Lim S K, Kahng Y H, Hong W K, Lee B H, Ko H C 2013 Small 9 3295
[86]	Zhao J, Wang G L, Yang R, Lu X B, Cheng M, He C L, Xie G B, Meng J L, Shi D X, Zhang G Y 2015 ACS Nano 9 1622
[87]	Powell M J 1989 IEEE Trans. Electron. Dev. 36 2753
[88]	Dimitrakopoulos C D, Malenfant P R L 2002 Adv. Mater. 14 99
[89]	Street R A 2009 Adv. Mater. 21 2007
[90]	Zhao J, He C L, Yang R, Shi Z W, Cheng M, Yang W, Xie G B, Wang D M, Shi D X, Zhang G Y 2012 Appl. Phys. Lett. 101 063112
[91]	Late D J, Liu B, Matte H S S R, Dravid V P, Rao C N R 2012 ACS Nano 6 5635
[92]	Zhang S L, Choi H H, Yue H Y, Yang W C 2014 Curr. Appl. Phys. 14 264
[93]	Late D J, HuangY K, Liu B, Acharya J, Shirodkar S N, Luo J J, Yan A M, Charles D, Waghmare U V, Dravid V P, Rao C N R 2013 ACS Nano 7 4879
[94]	Wang Y L, Cong C X, Qiu C Y, Yu T 2013 Small 9 2857
[95]	Horzum S, Sahin H, Cahangirov S, Cudazzo P, Rubio A, Serin T, Peeters F M 2013 Phys. Rev. B 87 125415
[96]	Tongay S, Zhou J, Ataca C, Liu J, Kang J S, Matthews T S, You L, Li J B, Grossman J C, Wu J Q 2013 Nano Lett. 13 2831
[97]	Varghese J O, Agbo P, Sutherland A M, Brar V W, Rossman G R, Gray H B, Heath J R 2015 Adv. Mater. 27 2734

[1]	傅群东, 王小伟, 周修贤, 朱超, 刘政. 硅基底上二维硒氧化铋的化学气相沉积法合成及其光电探测应用. , 2022, 71(16): 166101. doi: 10.7498/aps.71.20220388
[2]	费翔, 张秀梅, 付泉桂, 蔡正阳, 南海燕, 顾晓峰, 肖少庆. 基于熔融玻璃的预沉积法生长毫米级单晶MoS₂及WS₂-MoS₂异质结. , 2022, 71(4): 048101. doi: 10.7498/aps.71.20211735
[3]	田金朋, 王硕培, 时东霞, 张广宇. 垂直短沟道二硫化钼场效应晶体管. , 2022, 71(21): 218502. doi: 10.7498/aps.71.20220738
[4]	李璐, 张养坤, 时东霞, 张广宇. 单层二硫化钼的制备及在器件应用方面的研究. , 2022, 71(10): 108102. doi: 10.7498/aps.71.20212447
[5]	王铄, 王文辉, 吕俊鹏, 倪振华. 化学气相沉积法制备大面积二维材料薄膜: 方法与机制. , 2021, 70(2): 026802. doi: 10.7498/aps.70.20201398
[6]	王晓愚, 毕卫红, 崔永兆, 付广伟, 付兴虎, 金娃, 王颖. 基于化学气相沉积方法的石墨烯-光子晶体光纤的制备研究. , 2020, 69(19): 194202. doi: 10.7498/aps.69.20200750
[7]	孟宪成, 田贺, 安侠, 袁硕, 范超, 王蒙军, 郑宏兴. 基于二维材料二硒化锡场效应晶体管的光电探测器. , 2020, 69(13): 137801. doi: 10.7498/aps.69.20191960
[8]	邵宇飞, 孟凡顺, 李久会, 赵星. 分子动力学模拟研究孪晶界对单层二硫化钼拉伸行为的影响. , 2019, 68(21): 216201. doi: 10.7498/aps.68.20182125
[9]	王卫东, 李龙龙, 杨晨光, 李明林. 单层二硫化钼纳米带弛豫性能的分子动力学研究. , 2016, 65(16): 160201. doi: 10.7498/aps.65.160201
[10]	董艳芳, 何大伟, 王永生, 许海腾, 巩哲. 一种简单的化学气相沉积法制备大尺寸单层二硫化钼. , 2016, 65(12): 128101. doi: 10.7498/aps.65.128101
[11]	温家乐, 徐志成, 古宇, 郑冬琴, 钟伟荣. 异质结碳纳米管的热整流效率. , 2015, 64(21): 216501. doi: 10.7498/aps.64.216501
[12]	康海燕, 胡辉勇, 王斌, 宣荣喜, 宋建军, 赵晨栋, 许小仓. Si/Ge/Si异质横向SPiN二极管固态等离子体解析模型. , 2015, 64(23): 238501. doi: 10.7498/aps.64.238501
[13]	程立锋, 任承, 王萍, 冯帅. 基于异质结界面优化的光子晶体二极管单向传输特性研究. , 2014, 63(15): 154213. doi: 10.7498/aps.63.154213
[14]	赵赓, 程晓曼, 田海军, 杜博群, 梁晓宇, 吴峰. V2O5电极修饰对C60/Pentacene双层异质结场效应晶体管性能的影响. , 2012, 61(21): 218502. doi: 10.7498/aps.61.218502
[15]	伍楷舜, 龙兴腾, 董建文, 陈弟虎, 汪河洲. 光子晶体异质结的位相和应用. , 2008, 57(10): 6381-6385. doi: 10.7498/aps.57.6381
[16]	韩道丽, 赵元黎, 赵海波, 宋天福, 梁二军. 化学气相沉积法制备定向碳纳米管阵列. , 2007, 56(10): 5958-5964. doi: 10.7498/aps.56.5958
[17]	郭平生, 陈婷, 曹章轶, 张哲娟, 陈奕卫, 孙卓. 场致发射阴极碳纳米管的热化学气相沉积法低温生长. , 2007, 56(11): 6705-6711. doi: 10.7498/aps.56.6705
[18]	刘江涛, 周云松, 王福合, 顾本源. 不同晶格光子晶体异质结的界面传导模. , 2004, 53(6): 1845-1849. doi: 10.7498/aps.53.1845
[19]	刘红, 陈将伟. 纳米碳管异质结的结构及其电学性质. , 2003, 52(3): 664-667. doi: 10.7498/aps.52.664
[20]	刘鲁, 范广涵, 廖常俊, 曹明德, 陈贵楚, 陈练辉. AlGaInP四元系材料渐变异质结及其在高亮度发光二级管器件中的应用. , 2003, 52(5): 1264-1271. doi: 10.7498/aps.52.1264

计量

文章访问数: 11753
PDF下载量: 998
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板