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As a new family member of two-dimensional materials, black phosphorus has attracted much attention due to its infrared band gap and strongly anisotropic properties, bringing new concepts and applications in different fields. In characterizing black phosphorus, optical method and electrical method are typically used to obtain structural information and fundamental properties in terms of behaviors of electrons. So far, more studies are still needed to understand in depth the physical principle and facilitate applications. In this paper, multilayered black phosphorus flakes are synthesized via mechanical exfoliation from the bulk crystal, and field-effect transistors based on few-layer black phosphorus are fabricated by micro-nano fabrication technology, which owns 0°–360° four pairs of symmetrical electrodes. We experimentally obtain the characteristics of Raman modes
${\rm{A}}_{\rm{g}}^{\rm{1}}$ ,$ {\rm B_{2g}} $ , and${\rm{A}}_{\rm{g}}^2$ in parallel (XX) and vertical (XY) polarization configuration. Furthermore, the angle-dependent source-drain current angle is measured through a BP field-effect transistor. The Raman spectrum results demonstrate that three characteristic peaks are located at 361, 439 and 467 cm–1 in a range of 200–500 cm–1, corresponding to the vibration modes of${\rm{A}}_{\rm{g}}^{\rm{1}}$ ,$ {\rm B_{2g}}, $ and${\rm{A}}_{\rm{g}}^2$ , respectively. The fitting experimental data of polarization-dependent Raman spectra also show that the intensity for each of the three characteristic peaks has a 180° periodic variation in a parallel polarization configuration and also in a vertical polarization configuration. The maximum Raman intensity of Ag is along the AC direction, while that of B2g is along the ZZ direction. On the other hand, the electric transport curves illustrate that the largest source leakage current can be obtained near 0° (180°) armchair direction. Such results indicate the anisotropy of black phosphorus. Furthermore, transfer curves with different electrode angles show that the weak bipolarity of black phosphorus at 45° (225°), 90° (270°), and p-type performance at 0° (180°), 135° (315°) can be offered, respectively. This work is conducive to studying the properties and practical applications of devices based on black phosphorus.-
Keywords:
- black phosphorus /
- anisotropy /
- Raman spectra /
- field effect transistor
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图 1 黑磷 (a) 晶体结构; (b) 光学显微图; (c) 拉曼图谱
Figure 1. Black phosphorus: (a) Crystal structure; (b) microscopic image; (c) Raman spectrum.
图 2 在平行(XX)和垂直(XY)极化配置下, 黑磷
${\rm{A}}_{\rm{g}}^{\rm{1}}$ , B2g和${\rm{A}}_{\rm{g}}^2$ 拉曼模的偏振特性(点为实验数据, 红色曲线对应数据的拟合)Figure 2. Polarization characteristics of Raman modes
${\rm{A}}_{\rm{g}}^{\rm{1}}$ , B2g, and${\rm{A}}_{\rm{g}}^2$ in parallel (XX) and vertical (XY) polarization configurations. Dots and red curves correspond to experiment and fitting data, respectively.
图 3 BP-FETs (a)结构示意图; (b)光学显微图
Figure 3. (a) Schematic and (b) microscopic image of BP-FET.
图 4 (a) 角度依赖性的源漏电流; (b) 角度依赖性的
${\rm{A}}_{\rm{g}}^2$ 振动模式拉曼强度Figure 4. Dependence of (a) source-drain current and (b)
${\rm{A}}_{\rm{g}}^2$ Raman intensity on angular, respectively.
图 5 不同角度下的转移特性曲线
Figure 5. Transfer curves at different degrees.
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[1] Zhang J, Liu H J, Cheng L, Wei J, Liang J H, Fan D D, Shi J, Tang X F, Zhang Q J 2014 Sci. Rep. 4 6452
Google Scholar
[2] Qin G, Yan Q, Qin Z, Yue S, Cui H, Zheng Q, Su G 2014 Sci. Rep. 4 6946
Google Scholar
[3] Fei R X, Yang L 2014 Nano Lett. 14 2884
Google Scholar
[4] Suvansinpan N, Hussain F, Zhang G, Chiu C H, Cai Y Q, Zhang Y W 2016 Nanotechnology 27 065708
Google Scholar
[5] Tran V, Soklaski R, Liang Y F, Yang L 2014 Phy. Rev. B 89 235319
Google Scholar
[6] Warschauer D 1963 J. Appl. Phys. 34 1853
Google Scholar
[7] Mao N, Tang J, Xie L, Wu J X, Han B, Lin J J, Deng S B, Ji W, Xu H, Liu K H, Tong L M, Zhang J 2016 J. Am. Chem. Soc. 138 300
Google Scholar
[8] Geim A K, Novoselov K S 2007 Nat. Mater. 6 183
Google Scholar
[9] Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
Google Scholar
[10] Li L K, Yu Y J, Ye G J, Ge Q D, Ou X D, Wu H, Feng D L, Chen X H, Zhang Y B 2014 Nat. Nanotechnol. 9 372
Google Scholar
[11] Mittendorff M, Suess R J, Leong E, Murphy T E 2017 Nano Lett. 17 5811
Google Scholar
[12] Zhang G, Huang S, Chaves A, Song C, Ozcelik V O, Low T, Yan H 2017 Nat. Commun. 8 14071
Google Scholar
[13] Guo Q, Pospischil A, Bhuiyan M, Jiang H, Tian H, Farmer D, Deng B C, Li C, Han S, Wang H, Xia Q F, Ma T P, Mueller T, Xia F N 2016 Nano Lett. 16 4648
Google Scholar
[14] Qiao J, Kong X, Hu Z, Yang F, Ji W 2014 Nat. Commun. 5 4475
Google Scholar
[15] Zhang Z, Li L, Horng J, Wang N Z, Yang F, Yu Y, Zhang Y, Chen G, Watanabe K, Taniguchi T, Chen X H, Wang F, Zhang Y 2017 Nano Lett. 17 6097
Google Scholar
[16] Zhu W, Liang L, Roberts R H, Lin J, Akinwande D 2018 ACS Nano 12 12512
Google Scholar
[17] Li L, Kim J, Jin C, Ye G J, Qiu D Y, Jornada F H D, Shi Z, Chen L, Zhang Z, Yang F, Watanabe K, Taniguchi T, Ren W, Louie S G, Chen X H, Zhang Y, Wang F 2017 Nat. Nanotechnol. 12 21
Google Scholar
[18] Koenig S P, Doganov R A, Schmidt H, Neto A H C, Ozyilmaz B 2014 Appl. Phys. Lett. 104 103106
Google Scholar
[19] Island J O, Steele G A, Zant H S J, Castellanosgomez A 2014 2D Mater. 2 011002
Google Scholar
[20] Huang S, Ling X 2017 Small 13 1700823
Google Scholar
[21] 孟达, 从鑫, 冷宇辰, 林妙玲, 王佳宏, 喻彬璐, 刘雪璐, 喻学锋, 谭平恒 2020 69 167803
Google Scholar
Meng D, Cong X, Len Y Z, Lin M L, Wang J H, Yu B L, Liu X F, Yu X F, Tan P H 2020 Acta Phys. Sin. 69 167803
Google Scholar
[22] Pant A, Torun E, Chen B, Bhat S, Fan X, Wu K, Wright D P, Peeters F M, Soignard E, Sahin H, Tongav S 2016 Nanoscale 8 16259
Google Scholar
[23] Wang X, Jones A M, Seyler K L, Vv T, Jia Y, Zhao H, Wang H, Yang L, Xu X, Xia F 2015 Nat. Nanotechnol. 10 517
Google Scholar
[24] Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tomanek D, Ye P D 2014 ACS nano 8 4033
Google Scholar
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