缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响

张培健; 孟洋; 刘紫玉; 潘新宇; 梁学锦; 陈东敏; 赵宏武

doi:10.7498/aps.61.107703

摘要

通过改变制备条件,研究了Ag-SiO2薄膜中的缺陷对电阻翻转效应的影响.对比不同的热处理实验条件, 发现在120 ℃退火的样品经forming过程后具有稳定的电阻转变特性;另一方面, 在Ar/O2混合气氛下生长的SiO2具有比在纯Ar下生长的样品更加稳定、重复的电阻转变特性. 通过实验分析,表明热处理、电场作用和样品制备气氛可以改变、调节样品中的缺陷分布 (Ag填隙原子和氧空位缺陷),从而导致Ag-SiO2中基于缺陷的导电通道结构的形成和湮灭, 提出了提高电阻翻转稳定性的必要条件.

关键词:

电阻翻转效应 /
缺陷 /
热处理

Abstract

Influences of dislocation distribution on the resistive switching effect of Ag doped SiO2 thin film are investigated under different sample preparation conditions. Stable resistance switching characteristics are observed for the samples annealed at 120 ℃ and prepared in Ar/O2 mixed atmosphere. It is shown that annealing process, electric field formation and atmosphere of preparation can change the intensity and the distribution of the dislocations (Ag interstitial atoms and oxygen vacancies) in the Ag-SiO2 structure, which leads to the resistive switching effect based on the formation and annihilation of the conducting filaments.

Keywords:

作者及机构信息

1.
北京凝聚态物理国家实验室,中国科学院物理研究所, 北京 100190

基金项目: 国家重点基础研究发展规划项目(批准号: 2007CB925002和2009CB930803) 和中国科学院知识创新工程项目(批准号: KJCX2-YW-W24)资助的课题.

Authors and contacts

1.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2007CB925002, 2009CB930803) and the Knowledge Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-YW-W24).

参考文献

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施引文献

[1]	Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749
[2]	Zhuang W W, Pan W, Ulrich B D, Lee J J, Stecker J, Burmaster A, Evans D R, Hsul S T, Tajiri M, Shimaoka A, Inoue K, Naka T, Awaya N, Sakiyama K, Wang Y, Liu S Q, Wu N J, Ignatiev A 2002 IEEE. IEDM p193
[3]	Kim D C, Seo S, Ahn S E, Suh D S, Lee M J, Park B H, Yoo I K 2006 Appl. Phys. Lett. 88 202102
[4]	Yang J J, Pickett M D, Li X M, Ohlberg D A A, Stewart D R, Williams R S 2008 Nat. Nanotech. 3 429
[5]	Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
[6]	Guan W H, Long S B, Jia R, Liu M 2007 Appl. Phys. Lett. 91 062111
[7]	Seo J W, Park J W, Lim K S, Yang J H , Kang S J 2008 Appl. Phys. Lett. 93 223505
[8]	Chen A, Haddad S, Wu Y C, Lan Z, Fang T N, Kaza S 2007 Appl. Phys. Lett. 91 123517
[9]	Dong R, Lee D S, Xiang W F, Oh S J, Seong D J, Heo S H, Choi H J, Kwon M J, Seo S N, Pyun M B, Hasan M, Hwang H 2007 Appl. Phys. Lett. 90 042107
[10]	Shang D S, Sun J R, Shi L, Shen B G 2008 Appl. Phys. Lett. 93 102106
[11]	Shang D S, Sun J R, Shi L, Wang Z H, Shen B G 2008 Appl. Phys. Lett. 93 172119
[12]	Rossel C, Meijer G I, Bremaud D, Widmer D 2001 J. Appl. Phys. 90 2892
[13]	Gang J L, Li S L, Meng Y, Liao Z L, Liang X J, Chen D M 2009 Acta Phys. Sin. 58 5730 (in Chinese) [刚建雷, 黎松林, 孟洋, 廖昭亮, 梁学锦, 陈东敏 2009 58 5730]
[14]	Waser R, Aono M 2007 Nat. Mater. 6 833
[15]	Sawa A 2008 Mater. Today 11 28
[16]	Kwon D H, Kim K M, Jang J H, Jeon J M, Lee M H, Kim G H, Li X S, Park G S, Lee B, Han S, Kim M, Hwang C S 2010 Nat. Nanotech. 5 148
[17]	Janousch M, Meijer G I, Staub U, Delley B, Karg S F, Andreasson B P 2007 Adv. Mat. 19 2232
[18]	Tsubouchi K, Ohkubo I, Kumigashira H, Oshima M, Matsumoto Yitaka K, Ohnishi T, Lippmaa M, Koinuma H 2007 Adv. Mater. 19 1711
[19]	Shibuya K, Dittmann R, Mi S B, Waser R 2010 Adv. Mat. 22 411
[20]	Viana C E, Morimoto N I, Bonnaud 2000 Microelectronics Reliability 40 613
[21]	Kim E, Soejima N, Watanabe Y, Ishiko M, Kachi T 2010 Jpn. J. Appl. Phys. 49 04DF08
[22]	Santamaria J, Iborra E, Quesada F S, Diaz G G, Vidal M R 1986 Thin Solid Films 139 201
[23]	Schindler C, Thermadam S C P, Waser R, Kozicki M N 2007 IEEE Trans. Electron Dev. 54 2762
[24]	Schindler C, Weides M, Kozicki M N, Waser R 2008 Appl. Phys. Lett. 92 122910
[25]	Sarkar D K, Cloutier F, El Khakani M A 2005 J. Appl. Phys. 97 084302
[26]	Nason T C, Yang G R, Park K H, Lu T M 1991 J. Appl. Phys. 70 1392
[27]	Mcbrayer J D, Swanson R M, Sigmon T W 1986 J. Electrochem. Soc. A 133 1242
[28]	McBrayer J D, Swanson R M, Sigmon T W, Bravman J 1983 Appl. Phys. Lett. 43 653
[29]	Simmons J G, Verderber R R 1967 Proc. Roy. Soc. A 301 77
[30]	Hsiung C P, Liao H W, Gan J Y, Wu T B, Hwang J C, Chen F, Tsai M J 2010 ACS Nano 4 5414
[31]	Guoa X, Schindler C, Menzel S, Waser R 2007 Appl. Phys. Lett. 91 133513
[32]	Rozenberg M J, Inoue I H, Sánchez M J 2006 Appl. Phys. Lett. 88 033510
[33]	Rozenberg M J, Inoue I H, Sánchez M J 2004 Phys. Rev. Lett. 92 178302
[34]	Eftekhari G 1995 Phys. Stat. Sol. A 151 129

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